• Proceedings of the IEEK Conference
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• 1998.10a
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• pp.573-576
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• 1998

In this paper, we analyzed electric field density and plasma condition to ICP reactor geometry structure, to generate plasma, to maintain plasma uniformity of large area LCD panel in ICP reactor also, we simulated electric field density for all kind existence current (antena and plasma current) in ICP reactor to analyze plasma antena structure

• Journal of the Korean institute of surface engineering
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• v.29 no.5
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• pp.371-378
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• 1996

An RF inductively coupled plasma (ICP) torch has been developed as a typical thermal plasma generator and reactor. It has been applied to various materials processings such as plasma flash evaporation, thermal plasma CVD, plasma spraying, and plasma waste disposal. The RF ICP reactor has been generally operated under one atmospheric pressure. Lately the characteristics of low pressure RF ICP is attracting a great deal of attention in the field of plasma application. In our researches of RF plasma applications, low pressure RF ICP is mainly used. In many cases, the plasma generated by the ICP torch under low pressure seems to be rather capacitive, but high density ICP can be easily generated by our RF plasma torch with 3 turns coil and a suitable maching circuiit, using 13.56 MHz RF generator. Plasma surface modification (surface hardening by plasma nitriding and plasma carbo-nitriding), plasma synthesis of AIN, and plasma CVD of BN, B-C-N compound and diamond were practiced by using low pressure RF plasma, and the effects of negative and positive bias voltage impression to the substrate on surface modification and CVD were investigated in details. Only a part of the interesting results obtained is reported in this paper.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.5
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• pp.448-454
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• 2009

Hydrogen was produced from water plasma excited in high frequency (HF) inductively coupled tubular reactor. Mass spectrometry was used to monitor gas phase species at various process conditions, Water dissociation rate depend on the process parameters such as ICP power, $H_{2}O$ flow-rate and process pressure, Water dissociation percent in ICP reactor decrease with increase of chamber pressure, while increase with increase of ICP power and $H_{2}O$ flow rate. The effect of $CH_4$ gas addition to a water plasma on the hydrogen production has been studied in a HF ICP tubular reactor. The main roles of $CH_4$ additive gas in $H_{2}O$ plasma are to react with 0 radical for forming $CO_x$ and CHO and resulting additional $H_2$ production. Furthermore, $CH_4$ additives in $H_{2}O$ plasma is to suppress reverse-reaction by scavenging 0 radical. But, process optimization is needed because $CH_4$ addition has some negative effects such as cost increase and $CO_x$ emission.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1998.06a
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• pp.65-70
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• 1998

The Spray-ICP technique uses the ICP(Inductively Coupled Plasma) of ultra-high temperature which is produced by r.f power. The ICP is well-kwown as a clean heat source for the preparation of pure ceramic particles because the ICP is a electrodeless-thermal plasma without contamination. In this study,{{{{ { SnO}_{2 } }}}} particles were sythesized from metal salt solution by Spray-ICP technique. The effects of concentration of solution, collecting location of powders were investicated. The prepared {{{{ { SnO}_{2 } }}}} particles from each concentration of solution had same crystalline phase(tetragonal {{{{ { SnO}_{2 } }}}}) a nd the mean size decreased in proportion to the increase of solution concentration. Each {{{{ { SnO}_{2 } }}}} p owders collector in reactor and electrostatic collector had same crystalline phase and morphologies. The mean size of {{{{ { SnO}_{2 } }}}} p articles prepared by Spray-ICP technique was below 30nm.

• Transactions of the Korean hydrogen and new energy society
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• v.22 no.2
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• pp.206-212
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• 2011

The effect of process parameters on $H_2$ production from water vapor excited by HF ICP has been qualitatively examined for the first time. With the increase of ICP power, characteristics of $H_2$ production from $H_2O$ dissociation in plasma was divided into 3 regions according to both reaction mechanism and energy efficiency. At the edge of region (II) in the range of middle ICP power, energy effective hydrogen production from $H_2O$ plasma can be achieved. Furthermore, within the region (II) power condition, heating of substrate up to $500^{\circ}C$ shows additional increase of 70~80% in $H_2$ production compared to $H_2O$ plasma without substrate heating. This study have shown that combination of optimal plasma power (region II) and wall heating (around $500^{\circ}C$) is one of effective ways for $H_2$ production from $H_2O$.

• Applied Science and Convergence Technology
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• v.24 no.6
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• pp.237-241
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• 2015

The reactor impedance is calculated for a planar-type cylindrical inductively coupled plasma source by expanding the electromagnetic fields into their Fourier-Bessel series forms including the three-dimensional shape of the antenna. The mode excitation method is utilized to determine the electromagnetic fields based on a Poynting theorem-like relationship. From the obtained electromagnetic fields, a tractable form of the reactor impedance is obtained as a function of various plasma and geometrical parameters and applied to carry out a parametric study.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.442-442
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• 2008

Hydrogen was produced by water plasma excited in very high frequency inductively coupled tube reactor. Mass spectrometry was used to monitor gas phase species at various process conditions. Water dissociation rate depend on the process parameters such as ICP power, flow-rate and pressure. Water dissociation percent in ICP reactor decrease with increase of chamber pressure and $H_2O$ flow rate, while increase with increase of ICP power. In our experimental range, maximum water dissociation rate was 65.5% at the process conditions of 265 mTorr, 68 sccm, and 400 Watt. The effect of $CH_4$ addition to a water plasma on the hydrogen production has been studied in a VHF ICP reactor. With the addition of $CH_4$ gas, $H_2$ production increases to 12% until the $CH_4$ flow rate increases up to 15 sccm. But, with the flow rate of $CH_4$ more than 20 sccm, chamber wall was deposited with carbon film because of deficiency of oxygen in gas phase, hydrogen production rate decreased. The main roles of $CH_4$ gas are to reacts with O forming CO, CHO and $CO_2$ and releasing additional $H_2$ and furthermore to prevent reverse reaction for forming $H_2O$ from $H_2$ and $O_2$. But, $CH_4$ addition has negative effects such as cost increase and $CO_x$ emission, therefore process optimization is required.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.161-162
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• 2006

Scaling rules for TFT application devices have led to the necessity of ultra thin dielectric films and high-k dielectric layers. In this paper, The advantages of high concentration of nitrogen in silicon oxide layer deposited by using $N_2O$ in Inductively Coupled Plasma Chemical Vapor Deposition (ICP-CVD) reported about Ellipsometric measurement, Capacitance-Voltage characterization and processing conditions.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.98-98
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• 2000

초고집적(ULSI) 반도체 소자의 multilevel metalization을 위한 중간 유저네로서 저 유전상수(k<)와 높은 열적안정성(>45$0^{\circ}C$)을 갖는 새로운 물질을 도입하는 것이 필요하다. 중합체 박막은 낮은 유전상수와 높은 열적 안정성으로 인하여 low-k 물질로 적당하다고 여겨진다. PECVD에 의한 plasma polymer 박막의 증착은 많이 보고되어 왔으마 고밀도 플라즈마 형성이 가능하고 기판으로 유입되는 ion의 energy 조절이 가능한 inductively coupled plasma(ICP) CVD에 의한 plasma polymer 박막에 대한 연구는 보고된 바 없다. 본 연구에서는 Mtehyl-cyclohexane precusor를 사용하여 substrate에 bias를 주면서 inductively coupled plasma(ICP)를 이용하여 플라즈마 폴리머 박막(plasma polymerized methyl-cyclohexane : 이하^g , pp MCH라 칭함)을 증착하였으며 ICP power와 substrate bias(SB) power가 증착된 박막의 특성에 어떠한 영향을 미치는지 알아보았다. 증착된 박막의 유전상 수 및 열적 안정성은 ICP power의 변화에 비해 SB power의 변화에 더 크게 영향을 받았다.^g , pp MCH 박막은 platinum(Pt) 기판과 silicon 기판위에서 같이 증착되었다. Methyl-cyclohexane precursor는 4$0^{\circ}C$로 유지된 bubbler에 담겨지고 carrier 가스 (H2:10%, He:90%)에 의해 reactor 내부로 유입된다.^g , pp MCH 박막은 증착압력 350 mTorr, 증착온도 6$0^{\circ}C$에서 \circled1SB power를 10W에 고정시키고 ICP power를 5W부터 70W까지, \circled2ICP power를 10W에 고정시키고 SB power를 5W부터 70W까지 변화하면서 증착하였다. 유전 상수 및 절연성은 Al/PPMCH//Pt 구조의 capacitor를 만들어서 측정하였으며, 열적 안정성은 Ar 분위기에서 30분간의 열처리 전후의 두께 변화를 측정함으로써 분석하였다. SB power 10W에서 ICP power가 5W에서 70w로 증가함에 따라 유전상수는 2.65에서 3.14로 증가하였다. 열적 안정성은 ICP power의 증가에 따라서는 크게 향상되지 않은 것으로 나타났다. ICP power 10W에서 SB power가 5W에서 70W로 증가함에 따라 유전상수는 2.63에서 3.46으로 증가하였다. 열적 안정성은 SB power의 증가에 따라 현저하게 향상되었으며 30W 이상에서 증착된 박막은 45$0^{\circ}C$까지 안정하였고, 70W에서 증착된 박막은 50$0^{\circ}C$까지 안정하였다. 열적 안정성은 ICP power의 증가에 따라서는 현저하게 향상되었다. 그 원인은 SB power의 인가에 의해 활성화된 precursor 분자들이 큰 에너지를 가지고 기판에 유입되어 치밀한 박막이 형성되었기 때문으로 사료된다.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.5 no.3
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• pp.269-277
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• 1995

Ultrafine TEX>$Al_2O_3$ powders were prepared from $AlCl_3$ and $Al_2(SO_4)_3$3 by using inductively coupled plasma (lCP) of ultrahigh temperature (above 5000 K) in heat source. The prepared $Al_2O_3$ powders had ${\alpha} - group ({\alpha}, {wdelta} ;and; {\theta})$ phase, a narrow size distribution and around 20 nm in meansize. It could be suggested that gas - solid reaction growth and interparticle sintering occured at the center of ICP tail flame (X = 500 mm) through the results of deposited aggregates - flock, whisker and platy on MgO polycrystal plate. And the formation mechanism of $Al_2O_3$ powders In spray - ICP reactor were described from upper results.