• 한국재료학회지
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• 제10권3호
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• pp.179-183
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• 2000

$BCI_3/H_2/Ar$ ICP(Inductively Coupled Plasma)를 이용한 GaN이 건식식각에 있어서 공정변수들이 식각 특성에 미치는 영향을 분석하고 적정조건을 도출하였다. 연구 결과 식각속도와 측벽수직도 공히 ICP 전력, bias 전압과 $BCI_3$ 조성의 증가, 공정압력의 감소에 의해 현저히 증가하며, 온도의 증가에 따라 다소간 증가하였고, 온도의 증가에 따라 다소간 증가하였고, $BCI_3$조성이 가장 큰 영향을 미쳤다. 표면거칠기는 bias 전압 증가에 의해 크게 향상, $BCI_3$ 조성의 감소에 따라 향상되었으며 다른 변수는 큰 영향을 미치지 않았다. 결과적으로 ICP 전력 900W, bias 전압 400V, $BCI_3$ 조성 60%, 공정압력 4mTorr의 조건에서 175nm/min 정도의 $CI_2$ 사용 시와 유사한 높은 식각속도와 평탄한 표면이 얻어졌다. Bias 전압이 낮은 경우 식각 후 시료 표면에 $GaC_x$로 추정되는 식각부산물이 관찰되었다.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제50권10호
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• pp.494-499
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• 2001

The effects of accelerated Ultraviolet (UV) radiation on High temperature vulcanized (HTV), Room temperature vulcanized (RTV) silicone rubber and two types of ethylene propylene diene terpolymer (EPDM) used for composite insulator were investigated by hydrophobicity class (HC), surface voltage decay after corona charging, SEM-ES, FTIR and XPS. The contact angle in two kinds of silicone rubber was scarcely change, but EPDM occurred to the loss of hydrophobicity followed by surface cracking and chalking. The surface voltage decay on UV-treated silicone rubber and EPDM showed a different decay trend with UV treatment. EDS and XPS analysis indicated that the oxygen content increased with UV treatment time in all samples. For silicone rubber, the oxidized groups of inorganic silica-like structure increased with UV treatment time. The oxidized carbon of C=O, O=C-O in EPDM increased. These oxidized surface for each material had different electrostatic characteristics, so deposited charges were expected to have different impacts on their surface hydrophobicity. The degradation mechanism based on our results was discussed.

• 반도체디스플레이기술학회지
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• 제21권3호
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• pp.125-129
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• 2022

The current display technology tends to be highly integrated with high resolution, the element size is gradually downsized, and the structure becomes complicated. Inductively coupled plasma (ICP) dry etcher of various types of etching equipment is a structure that places a large multi-divisional antenna source on the top lid, passes current to the Antenna, and generates plasma using the induced magnetic field generated at this time. However, in the case of a device of a large area size, a support that can withstand a load structurally is necessary, and when these support portions are applied, arrangement of antenna becomes difficult, which causes reduction in uniformity. As described above, the development of antenna source of a large area having a uniform plasma density on the whole surface is difficult to restrict hardware (H/W). As a solution to this problem, we confirmed the change in uniformity of plasma by applying two kinds of specific shape faraday shield(FICP) to the lower part of the large area upper lid antenna of 6 and 8th more than that generation size. In this thesis, we verify the faraday shield effect which can improve plasma uniformity control of ICP dry etcher equipment applied to medium and large displays.

• 한국전기전자재료학회논문지
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• 제15권3호
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• pp.227-232
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• 2002

The silylated photoresist etch process was tested by enhanced-ICP. The comparison of the two process results of micro pattern etching with $0.35\mu\textrm{m}$ CD by E-ICP and ICP reveals that I-ICP has bettor quality than ICP. The etch rate and the RIE lag effect was improved in E-ICP. Especially, the problem of the lateral etch was improved in E-ICP.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 춘계학술대회 논문집 센서 박막재료 반도체재료 기술교육
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• pp.16-19
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• 2002

(Ba,Sr)TiO3(BST) thin film is an attractive material for the application in high-density dynamic random access memories (DRAMs) because of the high relative dielectric constant and small variation in dielectric properties with frequency. In this study, (Ba0.6,Sr0.4)TiO3 thin films on Pt/Ti/SiO2/Si substrates were deposited by a sol-gel method and the CF4/Ar inductively coupled plasma (ICP) etching behavior of BST thin films had been investigatedby varying the process parameters such as chamber pressure, ICP power, and substrate bias voltage. To analysis the composition of surface residue following etching BST films etched with different Ar/CF4 gas mixing ratio were investigated using x-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometer (SIMS).

• Transactions on Electrical and Electronic Materials
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• 제14권1호
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• pp.12-15
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• 2013

In this study, we carried out an investigation of the etching characteristics (etch rate, and selectivity to $SiO_2$) of $ZrO_2$ thin films in a $CF_4$/Ar inductively coupled plasma (ICP) system. The maximum etch rate of 60.8 nm/min for $ZrO_2$ thin films was obtained at a 20 % $CF_4/(CF_4+Ar)$ gas mixing ratio. At the same time, the etch rate was measured as a function of the etching parameter, namely ICP chamber pressure. X-ray photoelectron spectroscopy (XPS) analysis showed efficient destruction of the oxide bonds by the ion bombardment, as well as an accumulation of low volatile reaction products on the etched surface. Based on these data, the ion-assisted chemical reaction was proposed as the main etch characteristics for the $CF_4$-containing plasmas.

• 전기학회논문지
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• 제56권2호
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• pp.349-354
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• 2007

In this work, we investigated etching characteristics of $HfO_2$ thin film and Si using inductive coupled plasma(ICP) system. The ion energy distribution functions in an ICP system was analyzed by quadrupole mass spectrometer(QMS) with an electrostatic ion energy analyzer. The maximum etch rate of $HfO_2$ thin film is 85.5 nm/min at a $BCl_3/(BCl_3+Ar)$ of 20 % and decreased with further addition of $BCl_3$ gas. From the QMS measurements, the most dominant positive ion energy distributions(IEDS) showed a maximum at 20 % of $BCl_3$. These tendency was very similar to the etch characteristics. This result agreed with the universal energy dependency of ion enhanced chemical etching yields. And the maximum selectivity of $HfO_2$ over Si is 3.05 at a $O_2$ addition of 2 sccm into the $BCl_3/(BCl_3+Ar)$ of 20 % plasma.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.921-926
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• 2001

The link for the Superconducting Flux Flow Transistor (SFFT) which is based on the flux flow has been fabricated by the ICP etching methods. The channel width and the thickness of the SFFT were a 3 ${\mu}$m and about 300 nm, respectively. The superconducting characteristic of the link was measured by the x-ray diffraction and the E.D.S.. The SFFT etched by ICP showed an I-V characteristic like the three terminal transistor.

• 한국전기전자재료학회논문지
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• 제17권1호
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• pp.1-6
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• 2004

Dry etch characteristics of polysilicon with HBr/O$_2$ inductively coupled plasma (ICP) have been investigated. We determined etch late, uniformity, etch profiles, and selectivity with analyzing the cross-sectional scanning electron microscopy images obtained from top, center, bottom, right, and left positions. The etch rate of polysilicon was about 2500 $\AA$/min, which meets with the mass production for devices. The wafer level etch uniformity was within $\pm$5 ％. Etch profile showed 90$^{\circ}$ slopes without notches. The selectivity over photoresist was between 2:1∼4.5:1, depending on $O_2$ flow rate. The HBr-ICP etching showed higher PR selectivity, and sharper profile than the conventional Cl$_2$-RIE.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.74-77
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• 2002

The channel of the superconducting Flux Flow Transistor has been fabricated with plasma etching method using ICP. The ICP conditions were 700 W of ICP power, 150 W of rf chuck power, 5 mTorr of the pressure in chamber and 1:1 of Ar : Cl$_2$, respectively. The channel etched by plasma gas showed superconducting characteristics of over 77 K and superior surface morphology. The critical current of SFFT was altered by varying the external applied current. As the external applied current increased from 0 to 12 mA, the critical current decreased from 28 to 22 mA. Then the obtained r$\sub$m/ values were smaller than 0.1Ω at a bias current of 40 mA. The current gain was about 0.5. Output resistance was below 0.2 Ω.