• Journal of the Korean Ceramic Society
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• v.49 no.6
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• pp.556-560
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• 2012

Nanocrystalline CrN coatings were deposited by DC and ICP-assisted magnetron sputtering on Si (100) substrates. The influences of the ICP power on the microstructural and crystallographic properties of the coatings were investigated. For the generation of the ICP, radio frequency was applied using a dielectric-encapsulated coil antenna installed inside the deposition chamber. As the ICP power increased from 0 to 500W, the crystalline grain size decreased. It is believed that the decrease in the crystal grain size at higher ICP powers is due to resputtering of the coatings as a result of ion bombardment as well as film densification. The preferential orientation of CrN coatings changed from (111) to (200) with an increase in the ICP power. The ICP magnetron sputtering CrN coatings showed excellent surface roughness compared to the DC magnetron sputtering coatings.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.111-111
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• 2010

헬리콘 플라즈마는 자기장을 이용하여 높은 전자밀도를 가지게 하는 플라즈마 소스이다. 이러한 장점에도 불구하고, 전자석의 크기 때문에 설치가 어렵고, 전자석을 작동시키기 위해 추가 파워에 대한 추가 비용이 필요하며, 플라즈마의 균일도가 좋지 않아 공정에서는 많이 사용되지 못하였다. 이러한 난점은 UCLA의 Chen이 영구자석을 이용한 새로운 개념의 소스를 개발함으로써 풀릴 수 있다. 이 소스는 헬리콘 플라즈마의 높은 저항을 이용하여 여러 개의 헬리콘소스를 병렬로 연결이 가능하게끔 한다. 본 연구에서는 우선 Helic Code를 이용하여 밀도에 따른 헬리콘 플라즈마의 실저항을 계산해 보았다. 계산된 실저항값을 바탕으로, 한 개의 헬리콘 소스를 방전하여 헬리콘 플라즈마의 밀도와 전자온도 등 내부 파라미터 및 저항과 페이즈값 등 외부 파라미터들을 측정하여 계산된 결과와 비교해 보았다. 대면적화에 적합한 플라즈마 소스로써의 가능성을 알아보기 위해, 아르곤가스를 이용한 4개의 튜브로 병렬 방전을 시행해 보았다. Langmuir Probe를 이용하여 측정된 전자밀도를 통해 ICP에서 헬리콘 mode로의 전이 및 균일도를 측정하였다. 측정된 결과로부터, 입력된 파워가 플라즈마에 효과적으로 전달되기 위한 방법을 제시하고, 압력에 따른 헬리콘 mode의 전자밀도 경향성을 통해 어떤 범위에서 헬리콘 방전이 가능한지 알아보았다.

• Proceedings of the KIPE Conference
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• 2017.07a
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• pp.501-505
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• 2017

반도체에 대한 수요가 늘어남에 따라 반도체 칩 생산을 위한 웨이퍼 공정 및 평판 디스플레이 제조 공정에서 수백~수십 나노 단위 크기의 트랜지스터, 커패시터 등의 회로소자 제조를 요구하고 있다. 이에 따라 반도체 공정의 미세화가 10nm 이하까지 다다랐고 이로 인해 수율과 신뢰성 측면에서 파티클, 금속입자, 잔류이온 등 진공챔버 내부의 오염원 제거 중요성이 점점 증가하고 있다. 이러한 오염원 제거를 위해서 과거에는 진공 챔버를 개방하여 액상물질로 주기적인 세정을 하였으나 2000년대 초반부터 생산성 향상을 위해 진공 상태에서 건식 세정하는 원격 플라즈마 발생장치(Remote Plasma Generator, RPG)를 개발하여 공정에 적용 해 왔다. 건식 세정을 위해서 화학적 반응성이 높은 고밀도의 라디칼이 필요하고 이를 위해 플라즈마를 이용하여 라디칼을 생성한다. RPG는 안테나 형태의 기존 유도 결합 플라즈마 (Inductively Coupled Plasma, ICP) 방식에 자성코어(Ferrite Core)를 추가함으로써 고밀도 플라즈마 생성이 가능하다. 본 세션에서는 이러한 건식세정과 관련된 플라즈마 기술 소개, 플라즈마 발생장치의 종류 및 효과적인 건식 세정을 위한 원격 플라즈마 발생장치를 소개하고자 한다.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2017.05a
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• pp.103.1-103.1
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• 2017

Nanocrystalline HfN coatings were prepared by reactively sputtering Hf metal target with N2 gas using a magnetron sputtering system operated in DC and ICP (inductively coupled plasma) condition with various powers. The effects of ICP power, ranging from 0 to 200 W, on the coating microstructure, corrosion and mechanical properties were systematically investigated with FE-SEM, AFM, potentiostat and nanoindentation. The results show that ICP power has a significant influence on coating microstructure and mechanical properties of HfN coatings. With the increasing of ICP power, coating microstructure evolves from the columnar structure of DC process to a highly dense one. Average grain size and nano hardness of HfN coatings were also investigated with increasing ICP powers.

• Journal of Surface Science and Engineering
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• v.45 no.4
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• pp.168-173
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• 2012

A real-time monitoring of an immersed antenna type inductively coupled plasma (ICP) was done with optical emission spectroscopy (OES) to check the reports that sputtered atom density is decreasing as the ICP power is increased. At 10 mTorr pressure of Ar, Mg was sputtered by a bipolar pulsed power supply into 2 MHz ICP which has an insulator covered 2.5 turn antenna. Emitted light was collected in two different positions: above the target and inside the ICP region. With 100 W of Mg sputtering power, the intensities of Mg I (285.06 nm), Mg II (279.48 nm), Ar I (420.1 nm) were increased constantly with ICP power from 100 W to 600 W. At 500 W, the intensity of $Mg^+$ exceeded that of Mg under PID controlled discharge voltage of 180 V. The ratio of Mg II/Mg I was increased from 0.45 to 2.71 approximately 6 times.

• Journal of the Korean Ceramic Society
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• v.51 no.5
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• pp.375-379
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• 2014

Nanocrystalline TiAlN coatings were prepared by reactively sputtering TiAl metal target with $N_2$ gas. This was done using a magnetron sputtering system operated in DC and ICP (inductively coupled plasma) conditions at various power levels. The effect of ICP power (from 0 to 300 W) on the coating microstructure, corrosion and mechanical properties were systematically investigated using FE-SEM, AFM and nanoindentation. The results show that ICP power has a significant influence on coating microstructure and mechanical properties of TiAlN coatings. With increasing ICP power, the coating microstructure evolved from the columnar structure typical of DC sputtering processes to a highly dense one. Average grain size of TiAlN coatings decreased from 15.6 to 5.9 nm with increasing ICP power. The maximum nano-hardness (67.9 GPa) was obtained for the coatings deposited at 300 W of ICP power. The smoothest surface morphology (Ra roughness 5.1 nm) was obtained for the TiAlN coating sputtered at 300 W ICP power.

• Journal of Surface Science and Engineering
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• v.45 no.3
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• pp.123-129
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• 2012

Nanocrystalline CrN coatings were fabricated by DC and ICP (inductively coupled plasma) assisted magnetron sputtering techniques. The effect of ICP power, ranging from 0 to 500 W, on coating microstructure, preferred orientation mechanical properties were systematically investigated with HR-XRD, SEM, AFM and nanoindentation. The results show that ICP power has an significant influence on coating microstructure and mechanical properties of CrN coatings. With the increasing of ICP power, coating microstructure evolves from the columnar structure of DC process to a highly dense one. Grain size of CrN coatings were decreased from 11.7 nm to 6.6 nm with increase of ICP power. The maximum nanohardness of 23.0 GPa was obtained for the coatings deposited at ICP power of 500 W. Preferred orientation in CrN coatings also vary with ICP power, exerting an effective influence on film nanohardness.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2008.11a
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• pp.41-42
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• 2008

본 논문에서는 As-doped ZnO 박막의 플라즈마 식각 특성 및 메커니즘에 관하여 실험을 수행 하였다. As-doped ZnO 박막 식각 실험은 유도 결합 플라즈마 식각 장비(inductively coupled plasma;ICP)와 $BCl_3$/Ar 플라즈마에 첨가된 $Cl_2$가스의 비, RF 전력, DC bias voltage, 공정 압력에 대한 식각 속도의 변화를 관찰 하였다. $BCl_3$/Ar 플라즈마에 $Cl_2$ 가스 첨가량 6 sccm 까지는 증가하지만 그 이후 $Cl_2$ 가스의 첨가량이 증가할 때 식각속도가 감소하였다. 이는 플라즈마 내에서 Cl 라디칼의 밀도가 증가함에 따라서 $Ar^+$의 에너지가 감소와 비휘발성 식각 부산물의 증가에 의하여 효과적인 물리적 식각이 이루어 지지 못한 것으로 판단된다. OES를 이용하여 플라즈마 내에서 라디칼들의 빛의 세기를 측정하였고, 식각 후 As-type ZnO 박막 표면에서의 화학적 결합을 보기위해 XPS 분석을 실행하였다.

• Analytical Science and Technology
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• v.16 no.2
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• pp.152-158
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• 2003

This study was conducted to evaluate two sample digestion procedures and instrumental determination parameters for analysis of lead in bone. Amputated human legs were treated by acid digestion or microwave dissolution prior to spectrometric analysis. Inductively coupled plasma mass spectrometry (ICP-MS) and graphite furnace atomic absorption spectrometry (GF-AAS) were used for determining bone lead levels. Recovery efficiencies using standard reference material from acid digestion measured by ICP-MS were in good agreement with those of the certified value, but in cases of acid digestion by GF-AAS and microwave digestion by both two methods, recovery underestimated and overestimated, respectively. For the bone samples, the lead concentrations obtained by ICP-MS after acid digestionwere in good agreement with those by GF-AAS (correlation coefficient = 0.983), but GF-AAS gave systematically higher values than ICP-MS. While a good agreement between two analytical methods after microwave digestion was also obtained (correlation coefficient = 0.950), bone lead concentrations from microwave were relatively higher than those from acid digestion. In conclusion, the use of the simple nitric acid digestion procedure at an ambient temperature coupled to ICP-MS seems to be efficient for the determination of lead in bone in consideration for both the convenience and validity.

• Journal of the Microelectronics and Packaging Society
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• v.9 no.4
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• pp.11-16
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• 2002

In this study, the dry etching characteristics of $SrBi_2Ta_2O_9$ (SBT) thin films were investigated by using ICP-RIE (inductively coupled plasma-reactive ion etching). The etching damage and degradation were analyzed with XPS (X-ray photoelectron spectroscopy) and C-V (Capacitance-Voltage) measurement. The etching rate increased with increasing the ICP power and the capacitively coupled plasma (CCP) power. The etch rate of 900$\AA$/min was obtained with 700 W of ICP power and 200 W of CCP power. The main problem of dry etching is the degradation of the ferroelectric material. The damage-free etching characteristics were obtained with the $Ar/C1_2/CHF_3$ gas mixture of 20/14/2 when the ICP power and CCP power were biased at 700 W and 200 W, respectively. The experimental results show that the dry etching process with ICP-RIE is applicable to the fabrication of the single transistor type ferroelectric memory device.