• Title/Summary/Keyword: ICP

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Novel ICP Matching to Efficiently Interpolate Augmented Positions of Objects in AR (AR에서 객체의 증강 위치를 효율적으로 보간하기 위한 새로운 ICP 매칭)

  • Moon, YeRin;Kim, Jong-Hyun
    • Proceedings of the Korean Society of Computer Information Conference
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    • 2022.07a
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    • pp.563-566
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    • 2022
  • 본 논문에서는 증강현실에서 객체 증강 시, 특징점과 GPS를 이용하여 증강 위치를 효율적으로 보간할 수 있는 ICP(Iterative closest point) 매칭 기법을 제안한다. 다양한 환경에서 제한받지 않고 객체를 증강하기 위해 일반적으로 마커리스(Markerless) 방식을 사용하며, 대표적으로 평면 검출과 페이스 검출을 사용한다. 이는 현실과 자연스러운 동기화를 위한 것으로 계산은 작지만, 인식의 범위가 넓기 때문에 증강 위치에 대한 오차가 존재한다. 이러한 작은 오차는 특정 산업에서는 치명적일 수 있으며, 특히 건설이나 의료시설에서 발생하면 큰 사고로 이어진다. 객체를 증강 시킬 때 해당 환경에 대한 점 구름(Point cloud)을 수집하여 데이터베이스에 저장한다. 본 논문에서는 관측되는 점 구름과의 오차를 줄이기 위해 ICP 매칭 기법을 사용하며, 실린더 기반의 각도 보간을 이용하여 계산량을 줄인다. 결과적으로 특징점과 GPS를 이용하여 ICP 매칭 기법을 통해 효율적으로 처리함으로써, 증강 위치에 대한 정확도가 개선된 증강 방식을 보여준다.

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Improvement of analytical methods for arsenic in soil using ICP-AES (ICP-AES를 이용한 토양 시료 중 비소 분석 방법 개선)

  • Lee, Hong-gil;Kim, Ji In;Kim, Rog-young;Ko, Hyungwook;Kim, Tae Seung;Yoon, Jeong Ki
    • Analytical Science and Technology
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    • v.28 no.6
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    • pp.409-416
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    • 2015
  • ICP-AES has been used in many laboratories due to the advantages of wide calibration range and multi-element analysis, but it may give erroneous results and suffer from spectral interference due to the large number of emission lines associated with each element. In this study, certified reference materials (CRMs) and field samples were analyzed by ICP-AES and HG-AAS according to the official Korean testing method for soil pollution to investigate analytical problems. The applicability of HG-ICP-AES was also tested as an alternative method. HG-AAS showed good accuracies (90.8~106.3%) in all CRMs, while ICP-AES deviated from the desired range in CRMs with low arsenic and high Fe/Al. The accuracy in CRM030 was estimated as below 39% at the wavelength of 193.696 nm by ICP-AES. Significant partial overlaps and sloping background interferences were observed near to 193.696 nm with the presence of 50 mg/L Fe and Al. Most CRMs were quantified with few or no interferences of Fe and Al at 188.980 nm. ICP-AES properly assessed low and high level arsenic for field samples, at 188.980 nm and 193.696 nm, respectively. The importance of the choice of measurement wavelengths corresponding to relative arsenic level should be noted. Because interferences were affected by the sample matrix, operation conditions and instrument figures, the analysts were required to consider spectral interferences and compare the analytical performance of the recommended wavelengths. HG-ICP-AES was evaluated as a suitable alternative method for ICP-AES due to improvement of the detection limit, wide calibration ranges, and reduced spectral interferences by HG.

Postoperative Speech Outcomes and Complications in Submucous Cleft Palate Patients

  • Park, Tae Seo;Bae, Yong Chan;Nam, Su Bong;Kang, Kyung Dong;Sung, Ji Yoon
    • Archives of Plastic Surgery
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    • v.43 no.3
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    • pp.254-257
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    • 2016
  • Background The postoperative speech outcomes of submucous cleft palate (SMCP) surgery are known to be poorer than those of other types of cleft palate. We attempted to objectively characterize the postoperative complications and speech outcomes of the surgical treatment of SMCP through a comparison with the outcomes of incomplete cleft palate (ICP). Methods This study included 53 SMCP patients and 285 ICP patients who underwent surgical repair from 1998 to 2015. The average age of the patients at the time of surgery was $3.9{\pm}1.9years$ for the SMCP patients and $1.3{\pm}0.9years$ for the ICP patients. A retrospective analysis was performed of the complications, the frequency of subsequent surgical correction for velopharyngeal dysfunction (VPD), and speech outcomes. Results In both the SMCP and ICP patients, no cases of respiratory difficulty, bleeding, or wound disruption were noted. Delayed wound healing and fistula occurred in 18.9% and 5.7% of the SMCP patients and in 14% and 3.2% of the ICP patients, respectively. However, no statistically significant difference in either delayed wound healing or fistula occurrence was observed between the two groups. The rate of surgical correction for VPD in the SMCP group was higher than in the ICP group. In the subset of 26 SMCP patients and 62 ICP patients who underwent speech evaluation, the median speech score value was 58.8 in the SMCP group and 66 in the ICP group, which was a statistically significant difference. Conclusions SMCP and ICP were found to have similar complication rates, but SMCP had significantly worse speech outcomes.

Relationship between Increased Intracranial Pressure and Mastoid Effusion

  • Jung, Hoonkyo;Jang, Kyoung Min;Ko, Myeong Jin;Choi, Hyun Ho;Nam, Taek Kyun;Kwon, Jeong-Taik;Park, Yong-sook
    • Journal of Korean Neurosurgical Society
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    • v.63 no.5
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    • pp.640-648
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    • 2020
  • Objective : This study aimed to assess the relationship between increased intracranial pressure (ICP) and mastoid effusions (ME). Methods : Between January 2015 and October 2018, patients who underwent intracranial surgery and had ICP monitoring catheters placed were enrolled. ICP was recorded hourly for at least 3 days. ME was determined by the emergence of opacification in mastoid air cells on follow-up brain imaging. C-reactive protein (CRP) levels, presence of endotracheal tube (ETT) and nasogastric tube (NGT), duration of intensive care unit (ICU) stay, duration of mechanical ventilator application, diagnosis, surgical modalities, and presence of sinusitis were recorded. Each factor's effect on the occurrence of ME was analyzed by binary logistic regression analyses. To analyze the independent effects of ICP as a predictor of ME a multivariable logistic regression analysis was performed. Results : Total of 61 (53%) out of 115 patients had ME. Among the patients who had unilateral brain lesions, 94% of subject (43/50) revealed the ipsilateral development of ME. ME developed at a mean of 11.1±6.2 days. The variables including mean ICP, peak ICP, age, trauma, CRP, ICU stays, application of mechanical ventilators and presence of ETT and NGT showed statistically significant difference between ME groups and non-ME groups in univariate analysis. Sex and the occurrence of sinusitis did not differ between two groups. Adding the ICP variables significantly improved the prediction of ME in multivariable logistic regression analysis. Conclusion : While multiple factors affect ME, this study demonstrates that ICP and ME are probably related. Further studies are needed to determine the mechanistic relationship between ICP and middle ear pressure.

차세대 배선공정을 위한 Inductively Coupled Plasma Assisted Magnetron Sputtering을 이용한 텅스텐 막막 특성에 관한 연구

  • Lee, Su-Jeong;Kim, Tae-Hyeong;Ji, Yu-Jin;Byeon, Ji-Yeong;Lee, Won-O;Yeom, Geun-Yeong
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2018.06a
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    • pp.125-125
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    • 2018
  • 반도체 소자의 미새화에 따라 선폭이 10nm 이하로 줄어듦에 따라, 금속 배선의 저항이 급격하게 상승하고 있다. Cu는 낮은 저항과 높은 전도도를 가지고 있어 현재 배선물질로써 가장 많이 사용되고 있지만, 소자가 미세화됨에 따라 Cu를 미래의 배선물질로써 계속 사용하기에는 몇 가지 문제점이 제기되고 있다. Cu는 electron mean free path (EMFP)가 39 nm로 긴 특성을 가지기 때문에, 선폭이 줄어듦에 따라 surface 및 grain boundary scattering이 증가하여 저항이 급격하게 증가한다. 또한, technology node에 따른 소자의 operating temperature와 current density의 증가로 인해 Cu의 reliability가 감소하게 된다. 텅스텐은 EMFP가 19 nm로 짧은 특성을 가지고 있어, 소자의 크기가 줄어듦에 따라 Cu보다 낮은 저항 특성을 가질 수 있으며, 녹는점이 3695K로 1357K인 Cu보다 높으므로 배선물질로써 Cu를 대체할 가능성이 있다. 본 연구에서는 Inductively Coupled Plasma (ICP) assisted magnetron sputtering을 통해 매우 얇은 텅스텐 박막을 증착하여 저항을 낮추고자 하였다. 고밀도 플라즈마의 방전을 위해, internal-type coil antenna를 사용하였으며 텅스텐 박막의 증착을 위해 DC sputter system이 사용되었다. 높은 에너지를 가진 텅스텐 이온을 이용하여 낮은 온도에서 고품위 박막을 증착할 수 있었으며, dense한 구조의 박막 성장이 가능하였다. ICP assisted를 이용하여 증착했을 때와, 그렇지 않을 때를 비교하여 ICP 조건에 따라서 박막의 저항이 감소함을 확인할 수 있었을 뿐만 아니라 최대 약 65% 감소함을 확인할 수 있었다. XRD를 이용하여 ICP power를 인가했을 때, 높은 저항을 갖는 A-15 구조를 가진 ${\beta}$ peak의 감소와 낮은 저항을 갖는 BCC 구조를 가진 ${\alpha}$ peak의 증가를 상온과 673K에서 증착한 박막 모두에서 확인하였으며, 이를 통해 ICP power가 저항 감소에 영향을 미친다는 것을 확인하였다. 또한, 두 온도 조건에서 grain size를 계산하여 ICP power를 인가함에 따라 두 조건 모두 grain size가 증가하였음을 조사하였다. 또한, XPS 분석을 통해 ICP power를 인가하였을 때 박막의 저항에 많은 영향을 끼치는 O peak이 감소하는 것을 통해 ICP assisted의 효과를 확인하였다. 이를 통해, ICP assisted magnetron sputtering을 통해 텅스텐 박막을 증착함으로써 차세대 배선물질로써 텅스텐의 가능성을 확인할 수 있었다.

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Direct Determination of Tellurium in Simulated Nuclear Spent Fuels by Hydride Generation-Inductively Coupled Plasma Atomic Emission Spectrometry (수소화물 생성-유도결합플라스마 원자방출분광법을 이용한 모의사용후 핵연료 중의 텔루르 분석)

  • Choi, Kwang Soon;Lee, Chang Heon;Han, Sun Ho;Joe, Kih Soo;Kim, Won Ho
    • Analytical Science and Technology
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    • v.13 no.6
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    • pp.781-788
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    • 2000
  • Tellurium in simulated nuclear spent fuels (SIMFUEL) has been determined by hydride generation-inductively coupled plasma atomic emission spectrometry (HG-ICP-AES). Parameters such as concentrations of HCl and $NaBH_4$, flow rate of HCl and $NaBH_4$ were optimized and then the effects of U, Mo, Pd, Rh and Ru on the Te intensity were investigated. A thiourea as a masking agent was used to eliminate or minimize such interferences specially caused by palladium. Tellurium was measured by HG-ICP-AES and ICP-MS after separation of tellurium from SIMFUEL with cation exchange chromatography. The relative deviation between direct measurement and separation method was less than 6% based on the data by ICP-MS.

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ICP와 헬리콘 플라즈마를 이용한 대면적 고밀도 플라즈마 소스 개발

  • Lee, Jin-Won;An, Sang-Hyeok;Yu, Dae-Ho;Jang, Hong-Yeong
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.08a
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    • pp.340-340
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    • 2011
  • 플라즈마 공정에서의 생산률이 플라즈마의 밀도에 비례한다는 많은 연구가 이루어진 후, 초대면적 고밀도 플라즈마 소스의 개발은 플라즈마 소스 개발에서 중요한 부분을 차지하기 시작하였다. 이로 인해, 전자 공명 플라즈마, 유도 결합 플라즈마와 헬리콘 플라즈마 등 새로운 고밀도 플라즈마 개발 연구가 활발히 진행되고 있다. 최근에는 고밀도 플라즈마 개발과 더불어, 대면적 플라즈마 소스의 개발이 플라즈마 공정 기술의 중요한 이슈가 되고 있는데, 이는 450 mm 이상의 반도체, 2 m${\times}$2 m 이상의 8세대 평판 디스플레이와 1 m${\times}$1 m 태양광 전지 생산 공정에서 플라즈마의 기술이 요구되고 있기 때문이다. 대면적 공정영역의 이러한 경향은 균일한 대면적 고밀도 플라즈마 개발을 촉진시켜왔다. 밀도가 낮은 축전 결합 플라즈마를 제외한, 대면적 공정에 적합한 고밀도 플라즈마원으로 유도 결합 플라즈마와 헬리콘 플라즈마를 선택한 후, 병렬연결 시의 특성을 알기 위하여 ICP와 헬리콘의 단일 튜브와 다수 튜브의 플라즈마 내부, 외부 변수를 측정하여 조사하였다. 두 가지 플라즈마 소스의 비교 실험을 위하여, 자기장을 제외한 모든 조건을 동등하게 한 후 실험을 하였다. 단일 헬리콘 실험을 바탕으로, 대면적 실험에 가장 적합한 자기장의 세기, 자석의 위치 및 튜브의 치수를 정한 후, fractal 구조를 위한 16개 다수 방전을 ICP와 헬리콘을 비교하였다. 병렬연결 시, RF 플라즈마에서는 같은 전압을 가져도, 안테나 디자인을 고려하지 않으면 모든 튜브의 방전이 이루어 지지 않았다. 이를 컴퓨터 모의 전사를 통해 확인하고, 가장 최적화된 안테나를 설계하여 실험을 하였다. ICP에서는 모든 튜브가 방전에 성공한 반면, 헬리콘 플라즈마는 ICP에 10배에 달하는 높은 밀도를 냈으나, 오직 4개 튜브만이 켜지고 안정적으로 방전이 이루어 지지 않았다. ICP의 경우, RF 전송선의 디자인을 통해 파워의 균등 분배가 가능하지만, 헬리콘의 경우 자기장을 추가해서 고려해야 되는 것을 확인하였다. 모든 튜브에 비슷한 자기장을 형성하기 위해서는 자석의 크기가 커지는 문제점이 있으나, 매우 낮은 압력에서 방전이 가능하고, 같은 압력에서 ICP에 비해 10배 이상 달하는 장점이 있다. 실험 결과를 바탕으로, ICP와 헬리콘 플라즈마의 다수 방전에 대한 분류를 하였고, 바로 현장에 투입이 가능한 소스로 판단된다.

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Characteristics of NbN Films Deposited on AISI 304 Using Inductively Coupled Plasma Assisted DC Magnetron Sputtering Method

  • Jun, Shinhee;Kim, Junho;Kim, Sunkwang;You, Yong Zoo;Cha, Byungchul
    • Journal of the Korean institute of surface engineering
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    • v.46 no.5
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    • pp.187-191
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    • 2013
  • Niobium nitride (NbN) films were deposited on AISI 304 stainless steels by inductively coupled plasma (ICP) assisted dc magnetron sputtering method at different ICP powers, and the effects of ICP power on the phase formation, mechanical and chemical properties of the films were investigated. X-ray diffraction analysis (XRD) and field emission scanning electron microscopy (FESEM) were used to analyze the crystal structure and micro-knoop hardness was used to measure the hardness of the films. Also, 3-D mechanical profiler and a ball-on-disk wear tester were used to measure the thickness of the films and to estimate wear characteristics, respectively. The thickness of the films decreased but their hardness increased with increasing ICP power, and it was confirmed that only cubic ${\delta}$-NbN(200) remained at high ICP power. At lower ICP powers, a mixture of the hexagonal ${\delta}^{\prime}$-NbN and cubic ${\delta}$-NbN phases was obtained in the films and the hardness decreased. The corrosion potential value increased gradually with increasing ICP power, but the changes of ICP power did not significantly influence the overall corrosion resistance.

An Experimental Study on Multiple ICP & Helicon Source for Oxidation in Semiconductor Process

  • Lee, Jin-Won;Na, Byoung-Keun;An, Sang-Hyuk;Chang, Hong-Young
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.08a
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    • pp.271-271
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    • 2012
  • Many studies have been investigated on high density plasma source (Electron Cyclotron Resonance, Inductively Coupled Plasma, Helicon plasma) for large area source after It is announced that productivity of plasma process depends on plasma density. In this presentation, we will propose the new concept of the multiple source, which consists of a parallel connection of ICP sources and helicon plasma sources. For plasma uniformity, equivalent power (especially, equivalent current in ICP & Helicon) should distribute on each source. We design power feeding line as coaxial transmission line with same length of ground line in each source for equivalent power distribution. And we confirm the equivalent power distribution with simulation and experimental result. Based on basic study, we develop the plasma source for oxidation in semiconductor process. we will discuss the relationship between the processing parameters (With or WithOut magnet, operating pressure, input power ). In ICP, plasma density uniformity is uniform. In ICP with magnet (or Helicon) plasma density is not uniform. As a result, new design (magnet arrangement and gas distributor and etc..) are needed for uniform plasma density in ICP with magnet and Helicon.

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Map Building Using ICP Algorithm based a Robot Position Prediction (로봇 위치 예측에 기반을 둔 ICP 알고리즘을 이용한 지도 작성)

  • Noh, Sung-Woo;Kim, Tae-Gyun;Ko, Nak-Yong
    • The Journal of the Korea institute of electronic communication sciences
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    • v.8 no.4
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    • pp.575-582
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    • 2013
  • This paper proposes a map building using the ICP algorithm based robot localization prediction. Proposed method predicts a robot location to dead reckoning, makes a map in the ICP algorithm. Existing method makes a map building and robot position using a sensor value of reference data and current data. In this case, a large interval of the difference of the reference data and the current data is difficult to compensate. The proposed method can map correction through practical experiments.