• The Magazine of the IEIE
• /
• v.8 no.3
• /
• pp.43-47
• /
• 1981

• Proceedings of the KIEE Conference
• /
• 1982.07a
• /
• pp.127-128
• /
• 1982

• Journal of the Korean Society for Precision Engineering
• /
• v.15 no.1
• /
• pp.51-59
• /
• 1998

The purposes of the paper are to consider the failure phenomenon based on delamination and crack when the encapsulant of plastic IC package under hygrothermal loading in the IR soldering process is on elastic and viscoelastic behavior due to the temperature and to show the optimum design using fracture mechanics. The model for analysis is the plastic SOJ package with a dimpled diepad. The package model with the perfect delamination between chip and diepad is chosen to estimate the resistance to fracture by calculating J-integrals in low temperature and C(t)-integrals in high temperature with the change of the design under hygrothermal loading. The optimum design to depress the delamination and crack in the plastic IC package is presented.

• Journal of the Korean Society for Precision Engineering
• /
• v.15 no.1
• /
• pp.43-50
• /
• 1998

The purpose of the paper is to protect the damage of plastic IC package with searching the cause of the fracture due to the delamination and crack when the encapsulant of plastic IC package is on viscoelastic behavior with the effect of creep on high temperature, The model for analysis is the plastic SOJ package with dimpled diepad in the IR soldering process of surface mounting technology. The risk of delamination with calculating the distribution of viscoelastic thermal stress in the package without the crack in the surface mounting process is checked. The package model with the perfect delamination between chip and diepad is chosen to estimate the resistance against fracture in thermal loading with calculating C (t)-integrals according to the change of the design. The optimum design to depress the delamination and crack is presented.

• The Journal of Korean Institute of Communications and Information Sciences
• /
• v.22 no.9
• /
• pp.1933-1940
• /
• 1997

The development of CMOS IC chip and external system with optical transmission sytem is proposed in this paper, which deal with 4 subject 4 channel biological signals, receive and transmit biological signals to the external system using LED and infrared light of photodiode. This system decreases the dependency of power supply voltage to the COMS IC chip. A newenforce synchronization technique using infrared bi-directional communication has ben proposed. The telemetner IC with the size of $5.1{\times}5.1mm^2$ has the followingfunctions:receiving of command signal, initialization of internal state of all functional blocks, decoding of subject selection signal, time division multiplexing of 4-channel modulated biological signals, transmission of modulated signals to external system, and auto power down control. To confirm the total telemetry system, electrocardogram is transmitted and received to the external system using optical link.

• Journal of the Microelectronics and Packaging Society
• /
• v.20 no.4
• /
• pp.59-63
• /
• 2013

In this paper, the impact of the copper densities of substrate layers on IC package warpage is studied experimentally and numerically. The substrate strips used in this study contained two metal layers, with the metal densities and patterns of these two layers varied to determine their impacts. Eight legs of substrate strips were prepared. Leg 1 to leg 5 were prepared with a HD (high density) type of strip and leg 6 to leg 8 were prepared with UHD (ultra high density) type of strip. The top copper metal layer was designed to feature meshed patterns and the bottom copper layer was designed to feature circular patterns. In order to consider the process factors, the warpage of the substrate bottom was measured step by step with the following manufacturing process: (a) bare substrate, (b) die attach, (c) applying mold compound (d) and post reflow. Furthermore, after the post reflow step, the substrate strips were diced to obtain unit packages and the warpage of the unit packages was measured to check the warpage trends and differences. The experimental results showed that the warpage trend is related to the copper densities. In addition to the experiments, a Finite Element Modeling (FEM) was used to simulate the warpage. The nonlinear material properties of mold compound, die attach, solder mask, and substrate core were included in the simulation. Through experiment and simulation, some observations were concluded.

• Journal of the Microelectronics and Packaging Society
• /
• v.12 no.4 s.37
• /
• pp.315-321
• /
• 2005

Chip-on-glass technology to attach IC chip directly on the glass substrate of flat panel display was studied by using induction heating body in AC magnetic field. With applying magnetic field of 230 Oe at 14 kHz, the temperature of an induction heating body made with Cu electrodeposited film of 5 mm${\times}$5 mm size and $600{\mu}m$ thickness reached to $250^{\circ}C$ within 60 seconds. However, the temperature of the glass substrate was maintained below $100^{\circ}C$ at a distance larger than 2 mm from the Cu induction heating body. COG bonding was successfully accomplished with reflow of Sn-3.5Ag solder bumps by applying magnetic field of 230 Oe at 14 kHz for 120 seconds to a Cu induction heating body of 5mm${\times}$5mm size and $600{\mu}m$ thickness.

• Korean Journal of Materials Research
• /
• v.5 no.8
• /
• pp.929-935
• /
• 1995

In order to develop COG (Chip On Glass) technology for LCD module interconnecting the driver IC to Al pad electrode on the glass substrate, Anisotropic Conductive Adhesive(ACA) process, the most promising one among COG technologies, was investigated. ACA process was carried out by two steps, dispensing of ACA resin in the bonding area and curing by W radiation. Load on the chip was ranged from 2.0 to 15kg and the chip was heated at about 12$0^{\circ}C$. In resin, the density of conductive particles coated with Au or Ni at the surface were 500, 1000, 2000 and 4000 particles/$\textrm{mm}^2$, and the diameter of particles were 5, 7 and 12${\mu}{\textrm}{m}$. As a result of the experiments, ACA process using ACA particle of diameter and density of 5${\mu}{\textrm}{m}$ and 4000 particles/$\textrm{mm}^2$ respectively shows optimum characteristic with the stabilzed bonding properties and contact resistance.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.23 no.8
• /
• pp.593-600
• /
• 2010

In this paper, High brightness LED (light-emitting diodes) driver IC (integrated circuit) using new current sensing circuit is proposed. This LED driver IC can provide a constant current with high current precision over a wide input voltage range. The proposed current-sensing circuit is composed of a cascode current sensor and a current comparator with only one reference voltage. This IC minimizes the voltage stress of the MOSFET (metal oxide semiconductor field effect transistor) from the maximum input voltage and has low power consumption and chip area by using simple-structured comparator and minimum bias current. To confirm the functioning and characteristics of our proposed LED driver IC, we designed a buck converter. The LED current ripple of the designed IC is in ${\pm}5%$ and a tolerance of the average LED current is lower than 2.43%. This shows much improved feature than the previous method. Also, protections for input voltage and operating temperature are designed to improve the reliability of the designed IC. Designed LED driver IC uses 1.0 ${\mu}m$ X-Fab. BiCMOS process parameters and electrical characteristics and functioning are verified by spectre (Cadence) simulation.

• Proceedings of the IEEK Conference
• /
• 2004.08c
• /
• pp.883-884
• /
• 2004

High-speed IC for time-division multiplexing (TDM) optical transmission systems have been designed and fabricated by using InP heterojunction-bipolar-transistor (HBT) technology. The driver IC was developed for driving external modulators, featuring differential outputs and the operation speed up to 10 Gbps with an output voltage swing of 1.3 Vpp at each output which was the limit of the measurement. Because -3 dB frequency was 20GHz, this circuit will be operated up to 20Gbps. 1.3Vpp differential output was achieved by switching 50 mA into a 50 $\Omega$ load. The power dissipation of the driver IC was 1W using a single supply voltage of -3.5Y. Input md output return loss of the IC were better than 10 dB and 15 dB, respectively, from DC to 20GHz. The chip size of fabricated IC was $1.7{\Box}1.2 mm^{2}$.