• Analytical Science and Technology
• /
• v.13 no.5
• /
• pp.565-572
• /
• 2000

In this paper it was described on the standards for Xe analysis by Wavelength Dispersive X-ray Spectrometer (WDS) of Electron Probe Micro Analyser. According to the experimental results, CsI and $BaCO_3$ are appropriate compounds as standard specimen for Cs, I and Ba which has not suitable pure metal standards. In the beam current of 10-30 nA range, the Cs x-ray intensity measured from CsBr and CsI was proportional to the beam current. It was found that the linear regression factor R, showing the linearity between the atomic number and x-ray intensity between In and Nd elements, was higher than 0.99 at 25 kV and PET crystal. The caJlculated x-ray intensity of Xe standard from this linear regression equation was 1.095 times higher than that ofTe at 25 kV.

• Transactions on Electrical and Electronic Materials
• /
• v.1 no.4
• /
• pp.30-39
• /
• 2000

The variation of electrical properties of (Ba, Sr)TiO$_3$[BST] thin films deposited of RuO$_2$electrode with (Ba+Sr)/Tr ration was investigated. BST thin films with various (Ba+Sr)/Tr ration were deposited on RuO$_2$/Si substrates using in-situ RF magnetron sputtering. It was found that the electrical properties of BST films depends on the composition in the film. The dielectric constant of the BST films is about 190 at the (Ba+Sr)/Tr ration of 1.0, 1,025 and does not change markedly. But , the dielectric constant degraded to 145 as the (Ba+Sr)/Tr ratio increase to 1.0. In particular, the leakage current mechanism of the films shows the strong dependence on the (Ba+Sr)/Tr ration in the films. At the ration (Ba+Sr)/Tr=1,025, the Al/BST/RuO$_2$ capacitor show the most asymmetric behavior in the leakage current density, vs, electric field plot. It is considered that the leakage current of the (Ba+Sr)/Tr=1,025 thin films is controlled by the battier-Iimited process, i,e, Schottky emission.

• Proceedings of the KIEE Conference
• /
• 1998.11c
• /
• pp.795-797
• /
• 1998

A $BaTiO_3$, ferroelectric material, was mixed $SrTiO_3$, $(x)BaTiO_3-(1-x)SrTiO_3$($0.7{\leq}x{\leq}1$) ceramic capacitor with stable electrical properties in high voltage was fabricated. And microstructure, electrical property were investigated with $SrTiO_3$ mol ratio. The shrinkage, open porosity, sintering density were predominated at $9BaTiO_3-0.1SrTiO_3$. Increasing $SrTiO_3$ mol ratio, curie temperature was shifted at low temperature and maximum permittivity was increased. Also, $0.9BaTiO_3-0.1SrTiO_3$ was showed stable dielectric properties at $25{\sim}80[^{\circ}C]$. V-I properties of specimen were observed in the temperature range of $21{\sim}143[^{\circ}C]$, were divided into three regions. The region I below 10[kV/cm] was shown Ohmic conduction, the region II from 10 to 30[kV/cm] was explained by the Poole-Frenkel emission theory and the region III above 30[kV/cm] was analysed by the tunneling effect.

• Proceedings of the Korea Association of Crystal Growth Conference
• /
• 1996.06a
• /
• pp.511-512
• /
• 1996

• Korean Journal of Materials Research
• /
• v.6 no.2
• /
• pp.175-181
• /
• 1996

Ti(i-OC3H7)와 Ba(OH)2.8H2Or 그리고 공통용매로서 2-Methoxy Ethanol을 이용하여 균일 용액을 제조하고, 이로부터 미세하고 조성비가 균일한 BaTiO3분말을 제조하였다. 이러한 졸-겔법으로 제조된 분말을 TG-DTA와 XRD 분석으로 결정화 및 상변화를 관찰하였다. 각 온도별로 하소된 분말에서 (111)쌍정의 생성여부를 TEM을 이용해 관찰한 결과, 합성된 BaTiO3 분말에서는 하소중(111)쌍정의 생성이 활발히 일어나지 않는 것으로 판단되었다. 특히(111) 쌍정판은 합성된 겔을 120$0^{\circ}C$에서 하소한 후 이를 140$0^{\circ}C$에서 소결한 경우에만 관찰할 수 있었다. 이러한 하소온도의 영향은 원료분말의 입자크기나 형상이 쌍정 생성에 큰 영향을 미침을 의미하는 것으로, 본 연구에서는 이를 근거하여 (111) 쌍정의 생성에 대해서 고찰하였다.

• Journal of Powder Materials
• /
• v.16 no.6
• /
• pp.410-415
• /
• 2009

Hexagonal barium ferrite ($BaFe_{12}O_{19}$) nano-particles have been successfully synthesised using selfassembly method. Diethyleneamine (DEA) surfactant was used to fabricate the micelle structure of Ba-DEA complex under various DEA concentrations. $BaFe_{12}O_{19}$ powders were synthesized with addition Fe ions to Ba-DEA complex and then heat treated at temperature range of 800-1000${\circ}C$. The molar ratio of Ba/DEA and heat-treatment temperature significantly affected the magnetic properties and morphology of $BaFe_{12}O_{19}$ powders. $BaFe_{12}O_{19}$ powders synthesized with Ba/DEA molar ratio of 1 and heat-treated at 1000${\circ}C$ for 1 hour showed the coercive forces (iHc) of 4.84 kOe with average crystal size of about 200 nm.

• Journal of Radiation Protection and Research
• /
• v.10 no.2
• /
• pp.130-136
• /
• 1985

The activity measurement of a solution of $^{133}Ba$ which is an electron capture nuclide was carried out by the ${\beta}-{\gamma}$ coincidence method. The counting rates at the ${\beta}-,\;{\gamma}-$, and coincidence-channels were measured using a $4{\pi}$ proportional counter and two NaI(Tl) scintillation detectors. The specific activity of the solution calculated by the efficiency extrapolation was $(1151.01{\pm}2.99)kBqg^{-1}$ at the reference time(00h UT, 03-15-84). According to an international comparison of activity measurements organized by the Bureau International des Poids et Mesures, this result showed the difference of 0.94% to the mean value derived from the comparison.

• Korean Journal of Medicinal Crop Science
• /
• v.2 no.1
• /
• pp.38-43
• /
• 1994

The effect of thidiazuron on callus growth and shoot regeneration of Solanumspecies was very positive. Increasing concentrations of thidiazuron stimulated callus growth of Solanum ptycanthum and Solanum nigrum. Shoot regeneration of S. ptycanthum and S. nigrum was greater on medium with thidiazuron than that with IAA and BA. Thidiazuron at $0.5{\mu}M$ or above increased the number of shoots regenerated from S. ptycanthum calli compared to the IAA with BA. High concentrations of thidiazuron $( >I{\mu}M)$ increased the number of shoots than BA or low levels of thidiazuron and IAA or BA The addition of IAA to thidiazuron media reduced S. ptycanthum shoot formation.

• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.48 no.5
• /
• pp.319-325
• /
• 1999

Direct current(d.c.)leakage current voltage characteristics of radio-frequencymagnetron sputtered BaTa\sub 2\O\sub 6\ film capacitors with aluminum(A1) top and indium tin oxide (ITO) bottom electrodes have been investigatedas a function of applied field and temperature. In order to study surfacetreatment effect on the electrical characteristics of as-deposited film weperformed exposure of oxygen plasma on $BaTa_2O_6$ surface. d. c.current-voltage (I-V), bipolar pulse charge-voltage (Q-V), d. c. current-time (I-t) andcapacitance-frequency (C-f) analysis were performed on films. All ofthe films exhibita low leakage current, a high breakdown field strength (3MV/cm-4.5MV/cm), and high dielectric constant (20-30). From the temperature dependence of leakage current,we can conclude that the dominant conduction mechanism is ascribed toSchottky emission at high electric field (>1MV/cm) and hopping conduction at lowelectric field (<1MV/cm). According to our results, the oxide plasma surfacetreatmenton as-deposited $BaTa_2O_6$ resulted in lowering interfacebarrier height and thus, leakage current when a negative voltage applied to the A1 electrode. This can be explained by reduction of surface contamination via etching surface and filling defects such as oxygen vacancies.

• Journal of the Korean Ceramic Society
• /
• v.13 no.3
• /
• pp.13-20
• /
• 1976

The magnetic properties, especially the magnetostriction, of ferroxplana $Zn_{1-x}$$M_X$Y(x=0.0, 0.2, 0.4, 0.6) were investigated at room temperature. In general, the Curie temperature and the permeability of ferroxplana $Zn_{1-X}$$Mn_X$Y increased while the amount of the other phase decrease with increased concentration of dopant $Mn^{2+} for $Zn^{2+}. The magnetostriction constnats K1, K2, K3 and K4 for ZnY were ＋0.3, -5.0, -4.3 and $-4.8{\times}$$10^{-6} while that for 4Zn^0.8$ $Mn^0.2$Y were ＋2.5, -5.4, -6.0 and $-3.4{\times}10^{-6}$, respectively.