• Proceedings of the KIEE Conference
• /
• 1998.07d
• /
• pp.1352-1354
• /
• 1998

$LiNbO_3$ transistor showed relatively stable characteristic, low interface trap density, and large remanent polarization. This paper reports ferroelectric $LiNbO_3$ thin films grown directly on p-type Si(100) substrates by 13.56 MHz rf magnetron sputtering system for FRAM applications. To take advantage of low temperature requirement for growing films, we deposited $LiNbO_3$ films lower than $300 ^{\circ}C$. RTA(Rapid Thermal Anneal) treatment was performed for as-deposited films in an oxygen atmosphere at $600^{\circ}C$ for 60 sec. We learned from X-ray diffraction that the RTA annealed films were changed from amorphous to poly-crystalline $LiNbO_3$ which exhibited (012), (015), and (022) orientations. The I-V characteristics of $LiNbO_3$ films before and after anneal treatment showed that RTA improved the leakage current of films. The leakage current density of films decreased from $10^{-5}$ to $10^{-7} A/cm^2$ at room temperature measurement. Breakdown electric field of the films exhibited higher than 500 kV/cm. The C-V curves showed the clockwise hysteresis represents ferroelectric switching characteristics. From C-V curves, we calculated dielectric constant of thin film $LiNbO_3$ as 27.5 which is close to that of bulk value.

• Korean Chemical Engineering Research
• /
• v.55 no.3
• /
• pp.296-301
• /
• 2017

Recently, there are many efforts focused on development of more economical non-fluorinated membranes for PEMFCs (Proton Exchange Membrane Fuel Cells). In this study, sulfonated poly (ether ether ketone) (sPEEK) membrane reinforced with poly imide was made to enhance of membrane durability. In order to test durability of single (un-reinforced) membrane and reinforced membrane MEA (Membrane and Electrode Assembly), degradation accelerated stress test was used. Before and after degradation, I-V polarization curve, hydrogen crossover current, electrochemical surface area, membrane resistance and charge transfer resistance were measured. As a result of experiments, hydrogen crossover current of reinforced MEA was lower than that of single MEA, therefor durability of reinforced MEA was higher than that of single MEA. There was not especially short phenomena in reinforced MEA after degradation accelerated stress test.

• Korean Chemical Engineering Research
• /
• v.51 no.5
• /
• pp.556-560
• /
• 2013

Recently, there are many efforts focused on development of more economical non-fluorinated membranes for use in PEMFCs (Proton Exchange Membrane Fuel Cells). In this study, characteristics of poly(arylene ether sulfone)(PAES) were compared with fluorinated membrane at PEMFC operation condition. I-V polarization curve, hydrogen crossover, electrochemical surface area, membrane resistance and charge transfer resistance were measured. PAES membrane showed similar performance compared with fluorinated membrane at 100% relative humidity, but the performance of PAES membrane decreased largely due to low ionic conductivity at low relative humidity.

• Korean Chemical Engineering Research
• /
• v.45 no.4
• /
• pp.345-350
• /
• 2007

During PEMFC operation, OCV(open circuit voltage) and low humidity conditions accelerate the degradation of perfluorosulfonic acid membrane. There have been no studies that clearly explain why these conditions accelerate the membrane degradation. In this study, the hydrogen permeability through the membrane, I-V polarization of MEA, fluoride emission rate(FER) and $H_2O_2$ concentration in condensed water were measured during cell operation under OCV and low relative humidity(RH). The experimental results were evaluated with oxygen radical mechanism the most commonly known for membrane degradation. It seems that low RH of anode is a good condition for $H{\cdot}$ radical formation on the Pt catalyst and the OCV condition accelerate the $H{\cdot}$ to form $HO_2{\cdot}$ radical attacking the polymer membrane.

• Korean Chemical Engineering Research
• /
• v.54 no.2
• /
• pp.181-186
• /
• 2016

Recently, there are many efforts focused on development of more economical non-fluorinated membranes for use in PEMFCs (Proton Exchange Membrane Fuel Cells). In this study, characteristics of sulfonated Poly(ether ether ketone) (sPEEK) were compared according to degrees of sulfonation (DS), relative humidity, cell temperatures at PEMFC operation condition. I-V polarization curve, hydrogen crossover, electrochemical surface area, membrane resistance and charge transfer resistance were measured. sPEEK membrane showed high performance at high DS, high temperature and high relative humidity, in particular, performance of sPEEK membrane decreased largely due to low ionic conductivity at low DS and low relative humidity.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.13 no.4
• /
• pp.300-305
• /
• 2000

We have investigated the dielectric and electrical characteristics of palmitic acid(PA) stearic acid(SA) and arachidic acid(AA) Langmuir-Blodgett(LB) films because these fatty acid systems have a same hydrophilic group and a different hydrophobic one(methylene group or alkyl chain length). The fatty acid systems were used as LB films and the status of the deposited films was confirmed by evaluating the transfer ratio the UV absorption and the capacitance. The dielectric characteristics such as the frequency-capacitance characteristics and the dielectric dispersion and absorption characteristics of PA SA and AA through-plane were measured. The relative dielectric constants of PA, SA and AA LB films were about 3.0~4.6, 2.7~3.0 and 2.4~3.0 respectively. That is the relative dielectric constants were decreased in proportion to the chain length of methylene group. Also the dielectric dispersion and absorption of each fatty acid LB films have arisen from spontaneous polarization of dipole polarization in the range of 10$^4$~10$^{5}$ ［Hz］. The conductivity of PA, SA and AA LB films obtained from I-V characteristics were about 9$\times$10$^{-14}$ , 3$\times$10$^{-14}$ and 5$\times$10$^{-15}$ ［S/cm］. respectively. These results have shown the insulating materials and could control the conductivity y changing the length of methylene group. Also we have confirmed that the barrier height of fatty acid systems were almost the same ones obtained from dielectric characteristics.

• Corrosion Science and Technology
• /
• v.15 no.6
• /
• pp.281-289
• /
• 2016

The effect of nitrogen on the electrochemical corrosion and nanomechanical behaviors of martensitic stainless steel was examined using potentiodynamic polarization and nanoindentation test methods. The results indicate that partial replacement of carbon with nitrogen effectively improved the passivation and pitting corrosion resistance of conventional high-carbon and high- chromium martensitic steels. Post-test observation of the samples after a potentiodynamic test revealed a severe pitting attacks in conventional martensitic steel compared with nitrogen- containing martensitic stainless steel. This was shown to be due to (i) microstructural refinement results in retaining a high-chromium content in the matrix, and (ii) the presence of reversed austenite formed during the tempering process. Since nitrogen addition also resulted in the formation of a $Cr_2N$ phase as a process of secondary hardening, the hardness of the nitrogen- containing steel is slightly higher than the conventional martensitic stainless steel under tempered conditions, even though the carbon content is lowered. The added nitrogen also improved the wear resistance of the steel as the critical load (Lc2) is less, along with a lower scratch friction coefficient (SFC) when compared to conventional martensitic stainless steel such as AISI 440C.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2007.06a
• /
• pp.296-296
• /
• 2007

Ferroelectric neodymium-substituted $Bi_4Ti_3O_{12}$(BTO) thin films have been successfully deposited on Pt/Ti/$SiO_2$/Si substrate by a sol-gel spin-coating process and the effect of crystallization temperature on their microstructure and ferroelectric properties were studied systematically. $Bi(TMHD)_3$, $Nd(TMHD)_3$, $Ti(O^iPr)_4$ were used as the precursors, which were dissolved in 2-methoxyethanol. The thin films were annealed at various temperatures from 600 to $720^{\circ}C$ in oxygen ambient for 1 hr, which was followed by post-annealed for 1 hr after depositing a Pt electrode to enhance the electrical properties. X-ray diffraction (XRD) and scanning electron microscopy (SEM) were used to analyze the crystallinity and surface morphology of layered perovskite phase, respectively. The crystallinity of the BNT films was improved and the average grain size increased as the crystallization temperature increased from 600 to $720^{\circ}C$ at an interval of $40^{\circ}C$. The polarization values of the films were a monotonous function of the crystallization temperature. The remanent polarization value of the BNT thin films annealed at $720^{\circ}C$ was $24.82\;{\mu}C/cm^2$ at an applied voltage of 5 V.

• Proceedings of the Korean Vacuum Society Conference
• /
• 1998.02a
• /
• pp.17-17
• /
• 1998

Synchrotron radiation is produced when charged particles moving with relativistic velocities a are accelerated - for example, deflected by the bending magnets which guide the electron or p positrons in circular accelerators or storage rings. By using special focusing magnetic lattices i in the particle accelerators it is possible to make the dimensions of the particle beam very small with a hi맹 charge density which results in a light source with high b디lIiance. Synchrotron light h has important properties which make it ideal for a wide range of investigations in surface s science. The fact that the spectrum of electromagnetic radiation emitted in a bending magnet e extends in a continuum from the 얹r infra red region to hard x-rays means that it is id않I for a v variety of spectroscopic studies. Since there are no convenient lasers, or other really bright l light sources, in the vacuum ultraviolet and soft x-ray re.밍ons the development of synchrotron r radiation has enabled enormous advances to be made in this di펌C비t spectr따 re밍on. P Polarization-dependent measurements, for ex없nple ellipsometry or circular dichroism studies a are possible because the radiation has a well-defined polarization - linear in the plane of orbit w with additional right-circular, or left-circular, components for emission an생es above, or below, t the horizontal, respectively. Since the synchrotron light is emitted from a bunch of charge c circulating in a ring the light is emitted with a well-defined time structure with a short flash of l light every time a bunch passes an exit port. The time structure depends on the size of the ring a and the number and sequence of filling of the bunches. A pulsed light source enables time¬r resolved studies to be performed which provide direct information on the lifetimes and decay m modes of excited states and in addition opens up the possibility of using time of flight t techniques for spectroscopic studies. The fact that synchrotron radiation is produced in a clean u ultrahi야 vacuum environment is of gr않t importance for surce science studies. The current t비rd generation synchrotron light sources provide exceptionally high baliance and stability a and open up possibilities for experiments which would have been inconceivable only a short time ago.

• Proceedings of the Materials Research Society of Korea Conference
• /
• 1994.11a
• /
• pp.98-98
• /
• 1994

최근 청색반도체레이저의 실현을 위하여 ZnSe가 대표하는 II-Ⅵ족 화합물반도체와 Gan가 대표하는 III족 질화물반도체분야에서 집중적인 연구가 이루어지고 있으며, 아직까지 실용화 되지 않고 있는 청색반도체레이저의 출현에 대하여 많은관심이 모아지고 있다. III족 질화물반도체는 InM(Eg:1.9eV)부터 AIN(Eg: 6.2eV)에 이르기까지 전 조성영역에서 완전한 고용체를 이루며, 실온에서 직접천이형 에너지 대구조를 가지므로 청색 혹은 자외영역에서 동작하는 발광소자를 제작하는데 있어 유망시 되고 있는 소재이다. 특히 GaN와 InN의 3원흔정인 GaInN를 활성층으로 이용하면 그 발전파장을 370nm부터 650nm까지 즉 가시 전 영역으로부터 근 자외영역을 포함할 수 있게 된다. 이 연구에서는 AIGaN/GaInN 이중이종접합(DH) 구조의 고아여기에 의한 유도방출고아의 편광 특성을 조사하였다. 유기금속기상에피텍셜(MOVPE)법으로 성장한 AIGaN/GaInN DH 구조의 표면에 수직으로 펄스 발진 질소레이저(파장: 337.1cm, 주기 10Hz, 폭: 8nsec) 빔을 조사하고 DH구조의 단면으로부터의 유도방출광을 편광기를 통과 시킨 후 스펙트럼을 측정하였다. 입사고아 밀도가 증가함에 따라 약 402nm의 파장에서 유도발출에 의한 가도가 큰 피크가 나타났고, 그 반치폭은 약 18meV이었다. 실온에서 AIGaN/GaInN DH 구조로 부터의 유도방출에 필요한 입사광밀도의 임계치는 약 130㎾/$\textrm{cm}^2$이었다. 한편 편광각이 90$^{\circ}$일때는 발광스펙트럼의 강도가 매우 낮고 단지 자연방출에 의한 스펙트럼만이 나타났다. 편광각이 0$^{\circ}$일 때 최대의 방출광 강도를 나타내었으며, 편광각이 -90$^{\circ}$로 회전함에 따라 발고아강도의 강도가 감소하였다. 이와 같은 결과는 광여기에 의하여 AIGaN/GaInN DH 로 부터의 유도방출광이 GaInN활성층의 단면에 평행한 전기장의방향으로, 즉 TE모드로 선형적으로 편광됨을 의미한다. AIGaN/GanN DH 로 부터의 유도방출이 선형적으로 TE모드로 편광되는 것은 이 구조를 이용한 청색 및 자외선 반도체 레이저다이오드의 실현에 매우 유익한 것이다.