• Progress in Superconductivity
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• v.3 no.1
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• pp.83-86
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• 2001

We have fabricated a single flux quantum 4-stage shift register with interface-controlled $Y_1$$Ba_2$$Cu_3$$O_{7-x}$(YBCO) Josephson junction. The YBCO Josephson junctions showed RSJ-like current-voltage(I-V) curves at temperatures 45~80K. We tested load and shift operation of shift register with binary data sequences “1000”, “1010”, “1011”, and “1111” at 58K. For all the binary data sequences, the shift register operated successfully. By operating the circuit with proper current pulses, we observed no errors during at least 12 hours operation for all the data sequences.s.

• Progress in Superconductivity and Cryogenics
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• v.12 no.1
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• pp.17-21
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• 2010

In the case of designing superconducting power apparatuses using the second generation high temperature superconducting wire, it is necessary to have a tape-splicing technique to achieve low splice resistance between coated conductor (CC) tapes. In this paper, an experimental splice method between YBCO CC tapes is proposed for a coil application. Splices were performed with a 37Pb-63Sn solder. YBCO samples were fabricated with various pressures and cooling rates. Joint resistances of the spliced samples of jointed YBCO CC tapes were measured and evaluated from V-I curves. In addition, optical micrographs were obtained to analyze the cross sectional microstructure of jointed samples.

• The Transactions of the Korean Institute of Electrical Engineers A
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• v.52 no.7
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• pp.414-420
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• 2003

The domestic needs for larger capability of power sources are increasing to cope with the expanding power load which results from the industrial developments & the progressed life style. In summer, the peak load is mainly due to the non-industrial reasons such as air-conditioners and other cooling equipments. To cover the concentrated peak load in stable, the power transmission lines should be more constructed and efficiently operated. The ampacity design of the underground cable system is generally following international standards such as IEC287, IEC60853 and JCS168 which regards the shape of 100% daily full power loads. It is not so efficient to neglect the real shapes of load curves generally below 60~70% of full load. The dynamic (real time) rating system tends to be used with the measured thermal parameters which make it possible to calculate the maximum ampacity within required periods. In this paper, the CTM(Conductor Temperature Monitoring) which is the base of dynamic rating systems for tunnel environment is proposed by a design of lumped thermal network ($\pi$-type thermal model) and distribution temperature sensor attached configuration, including the estimation results of its performances by load cycle test on 345kV single phase XLPE cable.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.11
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• pp.717-723
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• 1999

The transient characteristics of grounding systems play a major role in the protection of power equipments, electronic circuits and info-communication facilities against surges which arise from lightning or ground faults. Electronic devices are very weak against lightning surges injected from grounding systems and can be damaged. The malfunction and damage of electronic circuits bring about bad operation performances, a lot of economical losses, and etc. Therefore, in order to obtain the effective protection measure of electronic devices from overvoltages and lightning surges, the analysis of the transient grounding impedances in essential. One of this work is to examine the transient behaviors of grounding impedances under steplike currents for various grounding systems. And the other of this work is to evaluate the transient behaviors of a grid with rods under impulse currents and to investigate the effect of grounding lead wire. Transient grounding impedances of a grid with rods under impulse current waves have been measured as a parameter of the length of the grounding leads. Z-t, Z-i and V-i curves of transient grounding impedance under impulse current waveforms have been measured and analyzed. It was found that the grounding impedance gives the inductive, resistive and capacitive aspects under steplike current. Transient grounding impedance characteristics were very different with shapes, geometries of ground electrodes. Also, they were dependent on the waveform and magnitude of impulse current.

• Proceedings of the KIEE Conference
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• 2004.11a
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• pp.183-186
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• 2004

The metal-ferroelectric-insulator-semiconductor(MFIS) capacitors were fabricated using a metalorganic decomposition (MOD)method. The $CeO_2$ thin films were deposited as a buffer layer on Si substrate and $Bi_{3.25}La_{0.75}Ti_3O_{12}$ (BLT) thin films were used as a ferroelectric layer. The electrical and structural properties of the MFIS structure were investigated by varying the $CeO_2$ layer thickness. The width of the memory window in the capacitance-voltage (C-V)curves for the MFIS structure decreased with increasing thickness of the $CeO_2$ layer. Auger electron spectroscopy (AES) and transmission electron microscopy (TEM) show no interdiffusion by using the $CeO_2$ film as buffer layer between the BLT film and Si substrate. The experimental results show that the BLT-based MFIS structure is suitable for non-volatile memory field-effect-transistors (FETs) with large memory window.

• Proceedings of the KIEE Conference
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• 2003.07b
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• pp.976-978
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• 2003

Quench characteristics of HTS tapes, which are applied over-current were investigated. When the applied current exceeds the critical current of HTS tapes, the superconductor of HTS tape comes to be changed into normal conductor so that the current begins to flow through the metal sheath, which is made of good electrical conductor. In this study, the current, corresponds to 10 times $I_c$ was fed to HTS tapes. Using the V-I curves and resistance with temperature variation of HTS tapes, the distribution of the applied current between superconductor and metal sheath was analyzed. As the results, we could acquire the duration and magnitude of current to reach to thermal quench.

• Journal of Electrochemical Science and Technology
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• v.13 no.4
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• pp.497-503
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• 2022

Spinel ferrites (Ni_xFe_3-xO₄; x = 0.25, 0.5, 0.75 and 1.0) have been prepared at 550℃ by egg white auto-combustion route using egg white at 550℃ and characterized by physicochemical (TGA, IR, XRD, and SEM) and electrochemical (CV and Tafel polarization) techniques. The presence of characteristic vibration peaks in FT-IR and reflection planes in XRD spectra confirmed the formation of spinel ferrites. The prepared oxides were transformed into oxide film on glassy carbon electrodes by coating oxide powder ink using the nafion solution and investigated their electrocatalytic performance for OER in an alkaline solution. The cyclic voltammograms of the oxide electrode did not show any redox peaks in oxygen overpotential regions. The iR-free Tafel polarization curves exhibited two Tafel slopes (b₁ = 59-90 mV decade^-1 and b₂ = 92-124 mV decade^-1) in lower and higher over potential regions, respectively. Ni-substitution in oxide matrix significantly improved the electrocatalytic activity for oxygen evolution reaction. Based on the current density for OER, the 0.75 mol Ni-substituted oxide electrode was found to be the most active electrode among the prepared oxides and showed the highest value of apparent current density (~9 mA cm^-2 at 0.85 V) and lowest Tafel slope (59 mV decade^-1). The OER on oxide electrodes occurred via the formation of chemisorbed intermediate on the active sites of the oxide electrode and follow the second-order mechanism.

• Polymer(Korea)
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• v.25 no.3
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• pp.399-405
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• 2001

Poly[3-octylthiophene-co-3-(4-fluorophenyl)thiophene]s were synthesized in 2:1, 1:1, and 1:2 mole ratios, and organic electroluminescent devices were fabricated using the copolymers. The opto-electrical properties of the copolymers were studied by PL, EL spectra, I-V, and V-L curves of the organic electroluminescent devices in conjunction with the energy band diagrams which were obtained from the cyclic voltammogram and the electronic absorption spectra. The LUMO energy level of P(OT/FPT)(1:1) is the lowest as -3.35 eV. In the copolymers P(OT/FPT)(2:1) and P(OT/FPT)(1:1) the ${\lambada}_{max}$ in the PL and EL spectra red-shifted as the mole ratio of fluorophenyl group increased while in P(OT/FPT)(1:2) it showed a blue-shift. This indicates that the backbone chain is twisted due to the steric hinderance of the fluorophenyl group leading to shorter ${\pi}$-conjugation length. P(OT/FPT)(1:1) showed the highest EL intensity and the highest power efficiency among the three copolymers. In P(OT/FPT)(1:2) the roughness of the film surface causes unusually high local leakage current leading to the low efficiency of electroluminescence.

• Journal of Sensor Science and Technology
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• v.7 no.1
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• pp.67-72
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• 1998

The crystallized CuPc and PbTe films are formed by thermal evaporation and pulsed ArF excimer laser ablation. Structural and electrical properties of thin film is observed by XRD and current-voltage(I-V) curves. From XRD analysis, both PbTe and CuPc thin films show a-axis oriented structure. For the measurement of photovoltaic effect, the transverse current-voltage curve of CuPc/Si, PbTe/Si and PbTe/CuPc/Si junctions have been analyzed in the dark and under illumination. The PbTe/CuPc/Si junction exthibits a strong photovoltaic characteristics with short circuit current($J_{sc}$) of $25.46\;mA/cm^{2}$ and open-circuit voltage($V_{oc}$) of 170 mV. Quantum efficiency and power conversion efficiency are calculated to be 15.4% and $3.46{\times}10^{-2}$, respectively. Based on the results of QE and ${\eta}$, the photocurrent process of PbTe/CuPc/Si junction can be explained as following three effective steps; photocarrier generation in the CuPc layer, carrier separation at PbTe/CuPc interface, and finally a transportation of electrons through the PbTe layer.

• Nuclear Engineering and Technology
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• v.5 no.1
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• pp.38-43
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• 1973

The spin-rotation constants of the proton and tile fluorine nucleus in C $H_4$, Si $H_4$, Ge $H_4$, C $F_4$, Si $F_4$ and Ge $F_4$ were determined experimentally by the molecular beam magnetic resonance method. From the Hamiltonian and the high field approximation, the quantized energy level is given by the following equation. W $m_{I}$ $m_{J}$=- $g_{I}$ $m_{I}$H- $g_{J}$ $m_{J}$H- $C_{av}$ $m_{I}$ $m_{J}$, where $c_{av}$ is one third of the trace of the C tensor. In the nuclear resonance experiment, the proton and the fluorine nuclear resonance curves consist of many unresolved lines given by v=- $g_{J}$H- $C_{av}$ $m_{I}$, and a Gaussian approximation is made to correlate $c_{av}$ to the experimentally obtained half-width of the resonance curve. In the rotational resonance experiment, the five resonance peaks as predicted by v=- $g_{I}$H- $c_{av}$ $m_{I}$, $m_{I}$=0, $\pm$1 and $\pm$2, were all observed. The magnitude of car was determined by measuring the frequency distance between two adjacent peaks. The sign of $c_{av}$ was determined by the side peak suppression technique. The technique is described, and the sign and magnitude of the spin-rotation constant cav are summarized as following: for C $H_4$ -10.3$\pm$0.4tHz(from the rotational resonance), for SiH +3.71$\pm$0.08kHz(from the nuclear resonance), for Ge $H_4$+3.79$\pm$0.13kHz(from the nuclear resonance), for C $F_4$, -6.81$\pm$0.08kHz(from the rotational resonance), for Si $F_4$, -2.46$\pm$0.06kHz(from the rotational resonance), and finally for Ge $F_4$-1.84$\pm$0.04kHz(from the rotational resonance).onal resonance).esonance).