• 전력전자학회논문지
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• 제14권5호
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• pp.372-378
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• 2009

태양광 발전시스템의 설치 용량이 증가함에 따라 시스템 효율을 개선하기 위한 연구가 활발히 진행되고 있다. 고성능 시스템의 설계 및 시험을 위해서는 태양전지의 모델링을 바탕으로 태양전지의 물리적 특성에 관해 정확히 이해하는 것이 중요하다. 그러나 태양전지의 모델은 다수의 파라미터가 얽힌 비선형 형태이며, 모델식의 파라미터 값을 얻기 위한 기존의 방식에서는 오차를 동반하는 실제와 다른 가정을 전제로 하므로 결과적으로 추출된 파라미터의 정확도가 저하되게 되는 단점이 있다. 따라서 본 논문에서는 제조사가 표준상태에서 측정하여 공개하는 태양전지의 I-V 커브로부터 다이오드의 이상계수와 역포화 전류를 구하고 이로부터 저항 성분이 없는 이상적인 태양전지의 I-V 커브를 도출한 뒤, 실측된 I-V 커브와 차이를 최소화하는 직·병렬 저항값을 추출하는 새로운 방식을 제안한다. 기존의 방식과 제안된 방식의 모델링을 통하여 얻은 파라미터를 이용해 구현한 I-V 커브와 실측 I-V 커브와의 상관관계를 최소자승법을 통해 계산함으로써 제안된 방법의 유용함을 증명하였다.

• KIEE International Transaction on Electrical Machinery and Energy Conversion Systems
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• 제4B권2호
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• pp.86-91
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• 2004

PV power generation, which directly converts solar radiation into electricity, contains numerous significant advantages. It is inexhaustible and pollution-free, silent, contains no rotating parts, and has size-independent electricity conversion efficiency. The positive environmental effect of photovoltaics is that it replaces the more polluting methods of electricity generation or that it provides electricity where none was available before. This paper highlights a novel simple method to abstract the entire parameters of the solar cell. In development, design and operation of PV power generation systems, a technique for constructing V-I curves under different levels of solar irradiance and cell temperature conditions using basic characteristic values of the PV module is required. Everyone who has performed manual acquisition and analysis of solar cell I versus V data would agree that the job is tedious and time-consuming. A better alternative is to use an automated curve tracer to print out the I versus V curves and compute the four major parameters; $V_{oc}$, $I_{sc}$, FF, and . Generally, the V-I curve tracer indicates only the commonly used solar cell parameters. However, with the conventional V-I curve tracer it is almost impossible to abstract the more detailed parameters of the solar cell; A, $R_{s}$ and $R_{sh}$ , which satisfies the user, who aims at the analysis of the development of the PV power generation system, that being advanced simulation. In this paper, the proposed method provides us with satisfactory results to enable us to abstract the detailed parameters of the solar cell; A, $R_s$ and $R_{sh}$.>.

• 한국진공학회지
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• 제16권1호
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• pp.1-6
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• 2007

우리는 O/Fe(100)의 원자적 구조와 MgO/Fe(100) 표면의 계면의 구조를 LEED I/V curve를 이용하여 분석하였다. 산소를 Fe(100) 표면에 흡착시켰을 때 Fe 표면의 첫 번째 층간 간격은 약 16 % 정도 팽창하는 것을 확인하였다. 1ML MgO를 Fe(100) 표면에 성장하였을 때, MgO의 O가 Fe의 on-top 위치에 자라나는 것을 확인하였고, MgO/Fe 계면의 층간 간격이 확장되는 것을 확인하였다. AIA(average intensity mixing approximation) 계산을 사용하여 단층 MgO 성장한 Fe(100) 계의 계면구조는 MgO/FeO/Fe(100)와 MgO/Fe(100)의 계면구조를 갖는 것을 확인하였다. 이것은 확장된 FeO 층의 존재를 보이고 MgO/FeO/Fe(100)와 MgO/Fe(100) 두가지 계면 구조의 공존을 보인 EELS 실험 결과를 뒷받침 한다.

• 한국태양에너지학회:학술대회논문집
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• 한국태양에너지학회 2011년도 추계학술발표대회 논문집
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• pp.278-281
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• 2011

This system can predict the maximum output about all illumination levels so that the PV system designer can design the system having the best efficiency. For the output prediction exact about the solar cell, that is the device the basis most in the PV system, the basis has to be in order to try this way. The solution based on Lambert W-function are presented to express the transcendental current-voltage characteristic containing parasitic power consuming parameters like series and shunt resistances. A simple and efficient method for the extraction of a single current-voltage (I-V) curve under the constant illumination level is proposed. With the help of the Lambert W function, the explicit analytic expression for I is obtained. And the explicit analytic expression for V is obtained. This analytic expression is directly used to fit the experimental data and extract the device parameters. The I-V curve of the solar cell was expressed through the modeling using Lambert W-function and the numerical formula where there is the difficulty could be logarithmically expressed This method expresses with the I-V curve through the modeling using Lambert W-function which adds other loss ingredients to the equation2 as to the research afterward. And the solar cell goes as small and this I-V curve can predict the power penalty in the system unit.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2007년도 제38회 하계학술대회
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• pp.1966-1967
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• 2007

Photovoltaic(PV) power generation system [1-2] has been extensively studied and watched with keen interest as a clean and renewable power source. So hardware and software studies strongly indicate the feasibility of commercially producing a low cost, user-friendly solar cell curve tracer. Generally, V-I curve tracer indicates only the commonly used solar cell parameters. However, with the conventional V-I curve tracer it is almost impossible to abstract the more detail parameters of solar cell ; A, Rs, and Rsh, which satisfies the user, who aims at the analysis of the development PV power generation system; advanced simulation. In this paper, the proposed method gives us the satisfactory results to abstract the detail parameters of solar cell ; A, Rs, and Rsh

• 한국태양에너지학회:학술대회논문집
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• 한국태양에너지학회 2008년도 춘계학술발표대회 논문집
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• pp.241-246
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• 2008

In this paper, we analyze the I-V curve and hot-spot phenomenon caused by solar cells' serial and parallel connected circuit. The mis-match loss of parallel interconnection with low Isc string decrease lower than serially interconnected one and temperature caused by hot-spot does. Also, mis-match loss of parallel interconnection with low Voc string increase more than serially interconnected one. The string having low Voc happened hot-spot phenomenon when open circuit. The bad solar cell in string gives revere bias to good solar cell and make hot-spot phenomenon. If we consider the mis-match loss, when designing PV module and array. the efficiency of PV system might increase.

• 한국전기전자재료학회논문지
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• 제18권9호
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• pp.870-875
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• 2005

We measured the optogalvanic signal and discharge voltage-current(V-I) curve under the two different discharge conditions with different buffer gases, Ar, and Ne. When the Gd was used as a cathode material at low discharge current less than 10mA, a significant change was observed in the current-voltage curve. Time resolved optogalvanic signal measurement were measured by the diode laser of which wavelengths correspond to metastable transition line of these gases (Ar, Ne). From these measurements, we found that the characteristics of the V-I curve strongly depend on the Penning ionization process.

• KIEE International Transactions on Electrophysics and Applications
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• 제2C권5호
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• pp.258-261
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• 2002

Electrical forming dependent current-voltage (I-V) and numerically derived differential conductance(dI／dV) characteristics have been presented in the multi-layer nano-crystalline silicon／oxygen (no-Si／O) superlattice. Distinct staircase-like features, indicating the presence of resonant tunnel barriers, are clearly observed in the dc I-V characteristics. Also, all samples showed a continuous change in current and zero conductivity around OV corresponding to the Coulomb blockade in the calculated dI／dV-V curve. Also, Ra-man scattering measurement showed the presence of a nano-crystalline Si structure. This result becomes a step in the right direction for the fabrication of silicon-based optoelectronic and quantum devices as well as for the replacement of silicon-on-insulator (SOI) in high speed and low power silicon MOSFET devices of the future.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
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• pp.744-746
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• 2003

A ZnO varistor with reference voltage 250V/mm was fabricated through the control of particle size in slurry and the variation of sintering conditions. It was found that to measure the flatness of the V-I characteristic curve in the small-current region and the flatness of the V-I characteristic curve in a large-current region was improved nonlinearity of the fabricated ZnO varistor. According to the IEC 60099-4 was measured the accelerated aging test and high current test of the distribution class surge varistor which is excellent in respect to the property of ZnO varistor.

• 한국초전도학회:학술대회논문집
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• 한국초전도학회 1999년도 High Temperature Superconductivity Vol.IX
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• pp.233-236
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• 1999

To investigate the effect of interference current between pairs and quasi-particles, we have calculated the change I-V characteristic curve of resistively and capacitively shunted Josephson junction with external microwave by simulation of modified Stewart-McCumber model. Such rf-induced constant-voltage steps and the immunity against to noise were found to be changed in the presence of interference current.