• 전기학회논문지
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• 제66권2호
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• pp.363-369
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• 2017

This paper presents the experimental results related to soil ionization and electrical breakdown in a concentric hemispherical electrode system under lightning impulse voltages. Dynamic voltage-current and impedance-time characteristics of soil ionization were measured and analyzed. Also the electrical breakdowns of the soil gap were investigated. The time-lag to the peak current corresponds to the soil ionization propagation. The time of ionization propagation in wet sand is found to decrease with increasing the impulse currents. A drastic decrease in ground resistance was observed during the impulse current spreading in sand. The electrical breakdown appears at the wave tail of impulse voltage and results in a wide scatter in V-t curves. The voltage-current curves have a fan-like shape attributed to ionization processes which result in increasing current and decreasing voltage.

• 대한전자공학회논문지
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• 제25권11호
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• pp.1329-1334
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• 1988

$NH_3-O_2$의 열반응에 의해 산화막을 성장시키는 새로운 방법을 소개하고, 기존의 건식산화방법을 이용한 $SiO_2$박막의 특성을 비교 설명하였다. $NH_3$의 유량에 따라서 박막의 성장비가 증가하고, 성장된 막의 구성성분이 건식산화때와 같음을 확인하였다. C-V특성곡선에서도 $Q_{OX}$와 $Q_{SS}$가 거의같았고 히스테리시스현상도 없었다. 또한 n-MOS트랜지스터를 제작하고 측정한 결과 $I_D$-$V_{DS}$특성곡선이 건식산화와 비교하여 우수함을 확인했다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1997년도 추계학술대회 논문집
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• pp.397-400
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• 1997

This paper presentes the characteristics of Si anisotropic etching and electrochemical etch-stop in aqueous TMAH/IPA/pyrazine solution. (100) Si etching rate of 0.747 $\mu\textrm{m}$/min which faster 86% than TMAH 25 wt.%/IPA 17 vol.% solution was obtained using best etching condition at TMAH 25 wt.%/IPA 17 vol.%/pyrazine 0.1 g and the etching rate of (100) Si was decreased with more additive quantity of pyrazine. I-V curve of p-type Si in TMAH/IPA/pyrazine was obtained. OCP(Open Circuit Potential) and PP(Passivation Potential) were -2 V and -0.9 V, respectively. Si diaphragms were obtained by electrochemical etch-stop in aqueous TMAH/IPA/pyrazine solution.

• 대한전자공학회논문지
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• 제23권6호
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• pp.814-819
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• 1986

In this work the electrical conduction and breakdown properties of thermal oxides grown on phosphorus-doped polysilicon have been investigated by using ramped I-V measurements. The oxide films, grown from phosphorus-doped polysilicon deposited at 560\ulcorner, have higher breakdown field(6.8MV/cm) and lower leakage current than those deposited at 625\ulcorner. Also the effective energy barrier height(\ulcorner)calculated from the Fowler-Nordheim curve of polyoxide was 0.76eV for 560\ulcorner deposited film and 0.64eV for 625\ulcorner deposited film.

• Journal of the Korean Wood Science and Technology
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• 제30권2호
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• pp.108-114
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• 2002

변장 14.0 cm와 16.5 cm인 소나무 정각재의 가열판진공건조와 고주파진공건조간의 건조속도, 함수율분포와 비(比)에너지를 비교하였다. 고주파진공건조는 가열판진공건조보다 건조속도 및 변장이 건조속도에 미치는 영향이 컸었다. 가열판진공건조 목재의 재장방향, 두께방향과 폭방향의 함수율분포는 볼록 형태를 나타내었고, 고주파진공건조 목재는 오목 형태를 나타내었다. 가열판진공건조 목재의 폭방향과 두께방향간의 수분경사는 유사하였으나 고주파진공건조 목재의 경우는 폭방향의 수분경사가 두께방향보다 완만하였다. 가열판진공건조와 고주파 진공건조의 비(比)에너지곡선은 함수율이 감소할수록 증가하는 경향을 나타내었고, 가열판진공건조의 비(比)는 고주파진공건조보다 컸었다.

• 대한전자공학회논문지SD
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• 제37권6호
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• pp.24-33
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• 2000

피로현상의 진행에 따라 발생하는 하부전극 주위의 산소공공 축적현상을 적용하여 강유전체 박막의 switching 특성과 MFSFET 소자특성을 시뮬레이션하였다. Switching 모델에서 relative switched charge는 피로현상 전에 0.74 nC 이였으나, 피로가 진행되어 50${\AA}$의 산소공공층이 생성된 후에는 불과 0.15nC 로서 산소공공층이 분극반전을 강력하게 억제함을 알았다. MFSFET 소자의 모델에서 C-V_G와 I_D-V_G 곡선은 2 V 의 memory window를 나타내었고, 캐패시턴스 특성에서 축적과 공핍 및 반전 영역은 확실하게 표현되었다. 그리고, $I_D-V_D$ 곡선에서 두 부분의 문턱전압에 의해 나타난 포화드레인 전류차이는 6mA/$cm^2$이었다. 그러나, 50${\AA}$의 산소공공층이 축적된 후, $I_D-V_D$ 곡선에서 포화 드레인 전류차이는 피로현상이 없는 경우에 비해 약 50% 감소하여 산소공공층이 소자 적용에 난제임을 확인하였다. 본 모델은 강유전체 박막의 다양한 특성과 임의의 강유전체 박막을 사용한 MFSFET 소자의 동작을 예측하는데 중요한 역할을 할 것으로 판단된다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1996년도 하계학술대회 논문집 C
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• pp.1414-1417
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• 1996

The purpose of this study Is to research and develop $V_{6}O_{13}$ composite cathode for lithium thin film battery. $V_{6}O_{13}$ represents a class of cathode active material used in Li rechargeable batteries. In this study, we investigated cyclic voltammetry and charge/discharge characteristics of $V_6O_{13}$/SPE/Li cells. Cyclic voltammogram of $V_{6}O_{13}$/SPE/Li cell at scan rate 1mV/sec showed reduction peaks of 2.25V and 2.4V and oxidation peaks of 2.4V and 2.2V. The discharge curve of $V_{6}O_{13}$/SPE/Li cell showed 4 potential plateaus. The discharge capacity was decreased in the beginning of charge/discharge cycling. After 8th cycling, the discharge capacity was stable. The discharge capacity of 1st cycle and 15th cycle was 290mAh/g and 147mAh/g at $25^{\circ}C$, respectively.

• Journal of Electrochemical Science and Technology
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• 제11권4호
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• pp.346-351
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• 2020

The removal characteristics of copper (Cu) from electrochemical surface by voltage-activated reaction were reviewed to assess the applicability of electrochemical-mechanical polishing (ECMP) process in three types of electrolytes, such as HNO₃, KNO₃ and NaNO₃. Electrochemical surface conditions such as active, passive, transient and trans-passive states were monitored from its current-voltage (I-V) characteristic curves obtained by linear sweep voltammetry (LSV) method. In addition, the oxidation and reduction process of the Cu surface by repetitive input of positive and negative voltages were evaluated from the I-V curve obtained using the cyclic voltammetry (CV) method. Finally, the X-ray diffraction (XRD) patterns and energy dispersive spectroscopy (EDS) analyses were used to observe the structural surface states of a Cu electrode. The electrochemical analyses proposed in this study will help to accurately control the material removal rate (MRR) from the actual ECMP process because they are a good methodology for predicting optimal electrochemical process parameters such as current density, operating voltage, and operating time before performing the ECMP process.

• 신재생에너지
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• 제9권2호
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• pp.30-39
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• 2013

Multi-crystalline silicon solar cells is not exist a specific crystal direction different from single crystalline silicon solar cells. In functional materials, therefore, isotropic wet etching of mc-Si solar cell is easy the acid solution rather than the alkaline solution. The reflectance of wet texturing process is about 25% and the reflectance of RIE texturing process is achieved less than 10%. In addition, wet texturing has many disadvantages as well as reflectance. So wet texturing process has been replaced by a RIE texturing process. In order to apply BIPV, RIE and wet textured multi-crystalline silicon solar cell modules was manufactured by different kind of EVA sheet. Moreover, in case of BIPV, the short circuit current characteristics according to the angle of incidence is more important, because the installation of BIPV is fixed location. In this study, we has measured SEM image and I-V curve of RIE and wet textured silicon solar cell and PV module. Also we has analyzed quantum efficiency characteristics of RIE and wet textured silicon solar cell for PV modules depending on incidence angle.

• 한국초전도ㆍ저온공학회논문지
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• 제15권3호
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• pp.9-12
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• 2013

Current-voltage characteristic models of superconducting material are suggested by many researchers. These current-voltage characteristic models are important because they can be used for design or simulation of superconductor devices. But widely used current-voltage models of superconductor wire still have some limitations. For example, a standard E-J power model has no parameters related with stabilizer's resistance in superconductor wire. In this paper, a current-voltage characteristic modeling method for high temperature superconductor (HTS) tape with considering the effect of stabilizer is introduced. And a current-voltage characteristic of a HTS tape is measured under different stabilizer conditions. Those measured current-voltage characteristics of the HTS tape modeled with proposed modeling method and the modeling results are compared.