• 한국재료학회지
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• 제15권2호
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• pp.139-142
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• 2005

[ $ZrO_2$ ] gate dielectric thin films were deposited by radio frequency (rf)-magnetron sputtering and its structure, surface morphology and electrical peoperties were studied. As the oxygen flow rate increases, the surface becomes smoother. The experimental results indicate that a high temperature annealing is desirable since it improves the electrical properties of the $ZrO_2$ gate dielectric thin films by decreasing the number of interfacial traps at the $ZrO_2/Si$ interface. The carrier transport mechanism is dominated by the thermionic emission.

• Journal of Magnetics
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• 제14권1호
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• pp.11-14
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• 2009

We investigated the I-V curves and differential tunneling conductance of two, CoFeB/MgO/CoFeB-based, magnetic tunnel junctions (MTJs): one with a low tunneling magnetoresistance (TMR; 22%) and the other with a high TMR (352%). This huge TMR difference was achieved by different MgO sputter conditions rather than by different annealing or deposition temperature. In addition to the TMR difference, the junction resistances were much higher in the low-TMR MTJ than in the high-TMR MTJ. The low-TMR MTJ showed a clear parabolic behavior in the dI/dV-V curve. This high resistance and parabolic behavior were well explained by the Simmons' simple barrier model. However, the tunneling properties of the high-TMR MTJ could not be explained by this model. The characteristic tunneling properties of the high-TMR MTJ were a relatively low junction resistance, a linear relation in the I-V curve, and conduction dips in the differential tunneling conductance. We explained these features by applying the coherent tunneling model.

• 한국전기전자재료학회논문지
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• 제28권10호
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• pp.658-664
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• 2015

This paper presents an electrical feature analysis of hysteresis curves in memristor differential and intergral control circuit. After making macro model of the memristor device, electric characteristics of the model such as time analysis, frequency dependent DC I-V curves were performed by PSPICE simulation. Also, we made a circuit of memristor-capacitor based on nano-wired memristor device and analyzed the simulated PSPICE results. Finally, we proposed a memristor based differential or integral control circuit, analyzed hysteresis curve characteristic in the control circuit.

• Journal of Advanced Marine Engineering and Technology
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• 제36권8호
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• pp.1117-1122
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• 2012

연료전지를 선박에 적용하는 연구를 위해서는 연료전지 특성을 고려한 전력 시스템 설계 및 부하 제어에 대한 연구가 필요하다. 하지만 연료전지를 직접 실험하기 위해서는 여러 보조기기들과 복잡한 제어 기술이 필요하다. 이러한 이유로 연료전지 시뮬레이터가 필요하며, 이를 위한 연구가 활발히 진행중이다. 본 논문에서는 자동차, 소형 선박 등에 적용되고 있는 PEMFC에 관하여 LabVIEW를 기반으로 시뮬레이션 하였다. 또한 이러한 시뮬레이션 데이터를 바탕으로 프로그램이 가능한 전력공급장치를 이용하여 시뮬레이터를 제작하여 연료전지의 특성을 구현하였다. 이를 통해 연료전지의 분극화 곡선과 변수에 따른 I-V특성을 확인할 수 있었다.

• 대한전자공학회논문지
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• 제20권1호
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• pp.45-49
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• 1983

Metal/insulator/n epi-layer/p+구조의 CID(controlled inversion device)를 제조하였다. I-V 특성 곡선에서 ON상태와 OFF상태사이에 부성저항(negative resistance)영역이 나타났다. CID를 제조하기 위해서 행한 산화층 형성 과정에서 600℃에서 5분간 산화시킨 소자의 스위칭 및 홀딩 전압은 각각 5.0V와 2.5V였다. 그리고 입사된 광에 의해서 스위칭 전압은 감소하였으나 홀딩 전압은 변하지 않았다.

• 한국산학기술학회논문지
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• 제21권3호
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• pp.569-575
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• 2020

최근, 화석연료 고갈과 온실 가스 배출에 대한 우려가 높아지면서 신·재생 에너지 기술에 대한 연구가 주목을 받고 있다. 휴대용 전자기기 및 웨어러블 디바이스의 수요가 증가하고 IT기기들이 소형화되면서 배터리의 크기, 사용시간 등의 한계를 극복하기 위한 기술로 에너지 하베스팅이 있다. 본 논문에서는 열전소자의 V-I 특성곡선과 내부저항을 분석하고, 기존의 MPPT제어방식을 비교하였다. P&O제어방식은 열전소자의 전압, 전류를 측정하기 위한 센서 2개를 사용해야하기 때문에 경제적으로 비효율적이다. 따라서 본 논문에서는 출력전압 조절을 위한 센서1개만을 이용하여 MPP를 추적하는 새로운 MPPT제어방식을 제안한다. 제안하는 MPPT제어방식은 duty ratio와 부하의 출력전압의 관계를 이용하였으며, DC-DC Converter의 출력전압을 주기적으로 샘플링하여 duty ratio를 증가 또는 감소시켜 최적의 duty ratio를 찾아 MPP를 유지하도록 제어된다. DC-DC Converter는 Two-Switch 토폴로지인 Cascaded boost-Buck Converter를 이용하여 회로도를 설계하였다. 제안된 MPPT 제어방식은 PSIM 시뮬레이션을 이용한 모의실험을 통하여 검증하였고, 그 결과 열전소자의 V-I 특성곡선으로부터 얻어지는 MPP에서 전압×전류 및 전력값(V=4.2V, I=2.5A, P=10.5W)과 일치함을 확인하였다.

• 한국전기전자재료학회논문지
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• 제31권6호
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• pp.427-432
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• 2018

High-capacity secondary batteries can cause explosion hazards owing to microcurrent variations or current surges that occur in short circuits. Consequently, complete safety cannot be achieved with general protection that is limited to a mere current fuse. Hence, in the case of secondary batteries, it is necessary for the protector to limit the inrush current in a short circuit, and to detect the current during microcurrent variations. To serve this purpose, a fuse can be employed for the secondary battery protection circuit with current detection. This study aims at designing a protection device that can stably operate in the hazardous circumstances associated with high-capacity secondary batteries. To achieve the said objective, a detecting fuse was designed from an alloy of low melting point elements for securing stability in abnormal current states. Experimental results show that the operating I-T and V-T characteristic constraints can be satisfied by employing the proposed current detecting self-contained low melting point fuse, and through the resistance of the heating resistor. These results thus verify that the proposed protection device can prevent the hazards of short circuit current surges and microcurrent variations of secondary batteries.

• 전기학회논문지
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• 제67권12호
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• pp.1619-1625
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• 2018

Portable electronic devices secondary batteries can cause fire and explosion due to micro-current change in addition to the situation of short-circuit inrush current, safety can not be secured with a general operation limited current fuse. Therefore, in secondary battery, it is necessary for the protector to satisfy both the limit current type operation in the open-short-circuit inrush current and the current detection operation characteristic in the micro current change situation and for this operation, a fuse for the current detection type secondary battery protection circuit can be applied. The purpose of this study is to design a protection device that operates stably in the hazardous situation of small capacity secondary battery for portable electronic devices through the design of low melting fuse elements alloy of sensing type fuse and secures stability in abnormal current state. As a result of the experiment, I-T and V-T operation characteristics are satisfied in a the design of the alloy of the current sensing type self-contained low melting point fuse and the resistance of the heating resistor. It is confirmed that it can prevent accidents of short circuit over-current and micro current change of secondary battery.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.408-409
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• 2007

Al-doped p-type ZnO films were fabricated on n-Si (100) and homo-buffer layers in pure oxygen at $450^{\circ}C$ by RF magnetron sputtering. Target was ZnO ceramic mixed with 2wt% $Al_2O_3$. XRD spectra show that the Al-doped ZnO thin films have ZnO crystal structure and homo-buffer layers are beneficial to Al-doped ZnO films to grow along c-axis. Hall Effect experiments with Van der Pauw configuration show that p-type carrier concentrations are ranged from $1.66{\times}10^{16}\;to\;4.04{\times}10^{18}cm^{-3}$, mobilities from 0.194 to $2.3cm^2V^{-1}s^{-1}$ and resistivities from 7.97 to $18.4{\Omega}cm$. P-type sample has density of $5.40cm^{-3}$ which is smaller than theoretically calculated value of $5.67cm^{-3}$. XPS spectra show that O1s has O-O and Zn-O structures and A12p has only Al-O structure. P-ZnO:Al/n-ZnO:Al junctions were fabricated by magnetron sputtering. V-I curves show that the p-n junctions have rectifying characteristics.

• 전력전자학회:학술대회논문집
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• 전력전자학회 2002년도 추계학술대회 논문집
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• pp.59-61
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• 2002

This research investigates electron beam to specification energy to Module that was generalized and schematized difference of curved line after existing V-I efficiency characteristic curve and irradiation. And will analyze cause of Si crystal Solar cell's efficiency addition and subtraction by 80keV electron beam investigation.