• 제목/요약/키워드: I-V Characteristic

검색결과 393건 처리시간 0.031초

해석학적 전류-전압모델을 이용한 이중게이트 MOSFET의 전송특성분석 (Analysis of Transport Characteristics for Double Gate MOSFET using Analytical Current-Voltage Model)

  • 정학기
    • 한국정보통신학회논문지
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    • 제10권9호
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    • pp.1648-1653
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    • 2006
  • 이 연구에서는 해석학적 전류-전압 모델을 이용하여 DGMOSFET(Double Gate MOSFET)의 전송특성을 분석하였다. MOSFET의 게이트길이가 100nm이하로 작아지면 산화막두께가 1.5m이하로 작아져야만하고 채널의 도핑이 매우 증가하기 때문에 소자의 문턱전압변화, 누설전류의 증가 등 다양한 문제가 발생하게 된다 이러한 문제를 조사하기 위하여 해석학적 전류-전압 모델을 이용하여 소자의 크기를 변화시키면서 전류-전압특성을 조사하였다 소자의 크기를 변화시키면서 해석학적 전류-전압 모델의 타당성을 조사하였으며 온도 변화에 대한 특성도 비교 분석하였다. 게이트 전압이 2V에서 77K의 전류-전압 특성이 실온에서 보다 우수하다는 것을 알 수 있었다.

Simple fabrication process and characteristic of a screen-printed triode-CNT field emission arrays for the flat lamp application

  • Jung, Y.J.;Park, J.H.;Jeon, S.Y.;Park, S.J.;Alegaonkar, P.S.;Yoo, J.B.;Park, C.Y.
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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    • pp.1214-1218
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    • 2006
  • We introduced simple fabrication process for field emission devices based on carbon nanotubes (CNTs) emitters. Instead of using the ITO material as a transparent electrode, a metal (Au) with thickness of 5-20nm was used. Moreover, the ITO patterning process was eliminated by depositing metal layer, before the CNT printing process. In addition, the thin metal layer on photo resist (PR) layer was used as UV block. We fabricated the CNT field emission arrays of triode structure with simple process. And I-V characteristics of field emission arrays were measured. The maximum current density of $254{\mu}A/cm2$ was achieved when the gate and the anode voltage was kept 150V and 3000V, respectively. The distance between anode and cathode was kept constant.

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Microcrystalline Si TFTs with Low Off-Current and High Reliability

  • Kim, Hyun-Jae;Diep, Bui Van;Bonnassieux, Yvan;Djeridane, Yassine;Abramov, Alexey;Pere, Roca i Cabarrocas
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.II
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    • pp.1025-1028
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    • 2005
  • Microcrystalline Si (${\mu}c-Si$) TFTs were fabricated using a conventional bottom gate amorphous Si (a-Si) process. A unique ${\mu}c-Si$ deposition technique and TFT architecture was proposed to enhance the reliability of the TFTs. This three-mask TFT fabrication process is comparable with existing a-Si TFT procesess. In order to suppress nucleation at the bottom interface of Si, before deposition of the ${\mu}c-Si$ an $N_2$ plasma passivation was conducted. A typical transfer characteristic of the TFTs shows a low off-current with a value of less than 1 pA and a sub threshold slop of 0.7 V/dec. The DC stress was applied to verify the use of ${\mu}c-Si$ TFTs for AMOLED displays. After 10,000 s of application of the stress, the off-current was even lowered and sub-threshold slope variation was less than 5%. For AMOLED displays, OLED pixel simulation was performed. A pixel current of 13 ${\mu}A$ was achieved with $V_{data}$ of 10 V. After the simulation, a linear equation for the pixel current was suggested.

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이원계 $SiO_2$$TiO_2$ 박막의 저항 변화 특성 (Resistance Switching Characteristics of Binary $SiO_2\;and\;TiO_2$ Films)

  • 박인성;김경래;안진호
    • 마이크로전자및패키징학회지
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    • 제13권2호
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    • pp.15-19
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    • 2006
  • 이원계 산화막인 비정질 $SiO_2$와 다결정 $TiO_2$의 저항 변화 특성을 연구하였다. Metal-Insulator-Metal의 저항 소자를 형성하여 전압 sweep에 의한 I-V를 측정하여 저항 상태를 확인하였다. 즉, 낮은 저항 상태 (LRS) 와 높은 저항 상태 (HRS) 의 두 가지 저항 상태가 존재하였으며, LRS는 전압에 의한 절연체의 불완전한 breakdown 후에, HRS는 전압에 의한 negative differential resistance 후에 각각 나타났다. LRS의 경우에는 Ohmic 전도 mechanism에 의해서, HRS의 경우에는 Schottky contact에 의한 potential barrier의 생성이 저항 상태를 결정한다고 제안하였다. 즉, potential barrier의 생성과 소멸이 두 저항 상태를 형성한다고 할 수 있다. 유전율이 높은 $TiO_2$$SiO_2$에 비하여, 낮은 동작 특성 전압을 나타내었으며, 1 V에서의 저항비도 높았다.

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InAs/GaAs 양자점 태양전지에서 전하트랩의 영향 (Influence of Carrier Trap in InAs/GaAs Quantum-Dot Solar Cells)

  • 한임식;김종수;박동우;김진수;노삼규
    • 한국진공학회지
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    • 제22권1호
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    • pp.37-44
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    • 2013
  • 본 연구에서는 양자점(quantum dot, QD)에서의 전하트랩이 태양전지의 특성에 미치는 영향을 조사하기 위하여, GaAs 모체 태양전지(MSC)의 활성층에 InAs/GaAs QD을 삽입한 $p^+-QD-n/n^+$ 태양전지(QSC)를 제작하여 그 특성을 비교 조사하였다. Stranski-Krastanow (SK)와 준단층(quasi-monolayer, QML)의 2종류 QD를 도입하였으며, 표준 태양광(AM1.5)에서 얻은 전류-전압 곡선으로부터 태양전지의 특성인자(개방전압($V_{OC}$), 단락전류($I_{SC}$), 충만도(FF), 변환효율(CE))를 결정하였다. SK-QSC의 FF값은 80.0%로 MSC의 값(80.3%)과 비슷한 반면, $V_{OC}$$J_{SC}$는 각각 0.03 V와 $2.6mA/cm^2$만큼 감소하였다. $V_{OC}$$J_{SC}$ 감소 결과로 CE는 2.6% 저하되었는데, QD에 의한 전하트랩이 주요 원인으로 지적되었다. 전하트랩을 완화시키기 위한 구조로서 QML-QD 기반 태양전지를 본 연구에서 처음 시도하였으나, 예측과는 달리 부정적 결과를 보였다.

Multi-Level을 사용한 PDP 구동회로에서 Timing 변화에 따른 특성 변화에 관한 연구 (A Study on Performance Characteristics of Multi-level PDP Driver Circuit in Accordance of Signal Timing Variation)

  • 김중수;노정욱;홍성수;사공석진
    • 전력전자학회논문지
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    • 제10권6호
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    • pp.560-568
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    • 2005
  • 제안된 Multi-level PDP sustain Driver는 기존 L. Webber에 의해 제안된 방식에 비해 낮은 전압 rating을 갖는 소자를 사용하며 sustain 전압파형의 rising/falling 구간이 각각 2번의 공진에 의해 이루어진다. 본 논문에서는 rising time을 구성하는 3단계$(T_{r1},\;T_{i1},\;T_{r2})$의 변화에 따라 PDP의 방전 특성에 미치는 영향을 비교하고, 기존 LG전자의 상용화 제품인 42V6와 특성을 비교한다. 실험결과는 3단계의 rising time 중에 $T_{i1}$의 변화에 따른 특성 변화가 가장 크며, $T_{r2}$의 변화에 의한 영향도 있으며, $T_{r1}$의 변화에 따른 특성 변화는 거의 없다. 제안된 PDP driver는 $T_{r1}$이 60ns, $T_{i1}$이 120ns, $T_{r2}$가 350ns 인 경우, Full white display pattern에서 기존제품에 비해 휘도 $14.6\%$증가, 소비전력 $5.9\%$감소, panel 효율 $24.2\%$ 증가, module 효율 $21.2\%$증가 등 특성을 얻을 수 있었다. 실제 PDP module 응용에 적합할 것으로 기대된다.

Bosonic Insulator Phase beyond the Superconductor-Insulator Transition in Granular In/InO$_x$ Thin Films

  • Kim, Ki-Joon;Lee, Hu-Jong
    • 한국초전도학회:학술대회논문집
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    • 한국초전도학회 1999년도 High Temperature Superconductivity Vol.IX
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    • pp.222-222
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    • 1999
  • From extensive measurements of the resistance and the dynamic resistance as functions of magnetic field and temperature, we find that the transport in the insulating state beyond the superconductor-insulator (S-I) transition is dominated by bosons(Cooper pairs and/or vortices) and cannot be described by the theory of the fermionic insulating phase. The maximum of the magnetoresistance at B = B$_m$ and the following negative slope in R(B) with increasing field can be explained by the crossover from the "Bose-glass" to the "Fermi-glass" phase as suggested by Paalanen, Hebard, and Ruel. The zero bias peak in dv/dl for biases below the characteristic voltage V$_c$ (or current $I_c$), gives a clue for the assumption of the "dirty boson" model which states that the insulating state above the critical magnetic field is the phase where Cooper pairs are localized due to the Coulomb blockade with a nonvanishing order parameter. The shift to a lower value of the critical magnetic field by overlaying thin Au layer, which is known as a strong spin-orbit scatterer, also supports the bosonic nature of the S-I transition.

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자라 위장관 내분비세포에 관한 면역조직화학적 연구 (An immunohistochemical study on the gastro-entero-endocrine cells of the pond tortoise (Amyda sinensis))

  • 김종범;이재현;이형식;이남수
    • 대한수의학회지
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    • 제30권4호
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    • pp.383-394
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    • 1990
  • The gastrointestinal endocrine cells of the Pond tortoise, Amyda sinensis were studied immunohistochemically, and somatostatin-, gastrin/cholecystokinin(GAS/CCK)-, glucagon-, 5-hydroxytryptamine(5-HT)-, insulin- and chromogranin-immunoreactive cells were revealed. The characteristic findings of the regional distribution and relative frequency of these immunoreative cells in the gastrointestinal tract of the Pond tortoise were as follows; A few somatostatin-immunoreactive cells were distributed from the segment I to the segment V. GAS/CCK-immunoreactive cells were found from the segment III to the segment VII. These cells were numerous in the segment III and a few in the other segments. A few glucagon-immunoreactive cells were found in the segment I and rare in the segment II. 5-HT-immunoreactive cells were found throughout the gastrointestinal tract. Numerous numbers of them were found in the segment I, while moderate or a few in the other segments. Insulin-immunoreactive cells were distributed from the segment II to the segment IX. Moderate numbers of them were found in the segment VIII and IX, while a few in the other segments. Chromogranin-immunoreactive cells were found from the segment III to the segment VI. Moderate numbers of these cells were found in the segment IV and V, while a few in the other segments. BPP-immunoreactive cells were not observed throughout the gastrointestinal tract of the Pond tortoise, Amyda sinensis.

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방류수의 방사능 오염 측정을 위한 배열형 SiPM 기반 방사선 검출 센서 제작 (Development of Radiation Sensor Based on Array SiPM for Measurement of Radioactive Contamination in Effluent)

  • 김정호;박혜민;주관식
    • 센서학회지
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    • 제27권4호
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    • pp.232-236
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    • 2018
  • A radiation detection sensor was developed and characterized by combining three types of CsI(Tl) scintillators and an array-type SiPM to detect the radioactive contamination of discharged water in real time. The characterization results showed that type 3 exhibited the most desirable characteristics in response linearity (R-square: 0.97889) according to detection sensitivity and incident radiation dose. Furthermore, in terms of spectral characteristics, type 3 exhibited 16.54% at 0.356 MeV (the emission gamma ray energy of $^{133}Ba$), 10.28% at 0.511 MeV (the emission gamma ray energy of $^{22}Na$), 9.68% at 0.356 MeV (the emission gamma ray energy of $^{137}Cs$), and 2.55% and 4.80% at 1.173 MeV and 1.332 MeV (the emission gamma ray energies of $^{60}Co$), respectively. These measurements confirmed the good energy characteristics. The results were used to evaluate the spectral characteristics and energy linearity in a mixed source using type 3 with the best detection characteristics. It was confirmed that the gamma ray peaks of $^{133}Ba$, $^{22}Na$, $^{137}Cs$, and $^{60}Co$ were well resolved. Moreover, it was confirmed that R-square, which is an indicator of energy linearity, was 0.99986. This indicates a good linearity characteristic. Based on this study, further commercialization studies will contribute to measurements in real time and to the management of the contamination caused by radioactive wastewater or radioactive material leakage, which originate from facilities that use radioactive isotopes or care facilities.

$BrO_2/a-Se$ 구조의 방사선 변환센서에서 a-Se에 첨가된 조성비 변화에 따른 I-V 특성 비교 (Comparison of the I-V Characteristic as Various Composition ratio of Iodine in a-Se of $BrO_2/a-Se$ based Radiation Conversion Sensor)

  • 최장용;박지군;공현기;안상호;남상희
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
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    • pp.440-443
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    • 2002
  • Present1y the X-Ray diagnosis system is a real condition that is changing by digital ways in it's existent analog ways. This digital radiation detector is divided by the direct method and the indirect method. The indirect method of applied voltage has special qualities that the resolution is low than direct method by diffusion effect that happens. The conversion process ( radiation${\rightarrow}$visible ray${\rightarrow}$electrical signal of two times, has shortcomings that the energy conversion efficiency of electrical signal is low. The direct method has shortcomings that need strong electric fie1d to detect electrical signal efficiently. This research achieved to develop digital detector of the Hybrid method that have form that mixes two ways to supplement shortcoming of direct. indirect method. A studied electrical characteristic by Iodine's Mixture ratio change is added to selenium in the detector which has a multi-layer structure (Oxybromide + a-Se). There are 8 kinds of Manufactured compositions to amorphous selenium Iodine each 30ppm, 100ppm, 200 ppm, 300ppm, 400ppm, 500ppm, 600ppm, 700ppm by a doped photoconductor through a vacuum thermal evaporation method. The phosphor layer is consisted of Oxybromide ($BrO_2$) which uses optical adhesives multi-layer structure. The manufactured compositions calculates and compares Net Charge and signal to noise ratio measuring Photocurrent about Darkcurrent and X-ray. When doped Iodine Mixture ratio is 500ppm to the multi-layer structure (Oxybromide + a-Se), applied voltage of $3V/{\mu}m$, leakage current of compositions $2.61nA/cm^2$ and net charge value by 764pC/$cm^2$/mR then the best result appeared.

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