• Progress in Superconductivity and Cryogenics
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• v.15 no.3
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• pp.9-12
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• 2013

Current-voltage characteristic models of superconducting material are suggested by many researchers. These current-voltage characteristic models are important because they can be used for design or simulation of superconductor devices. But widely used current-voltage models of superconductor wire still have some limitations. For example, a standard E-J power model has no parameters related with stabilizer's resistance in superconductor wire. In this paper, a current-voltage characteristic modeling method for high temperature superconductor (HTS) tape with considering the effect of stabilizer is introduced. And a current-voltage characteristic of a HTS tape is measured under different stabilizer conditions. Those measured current-voltage characteristics of the HTS tape modeled with proposed modeling method and the modeling results are compared.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.40 no.1
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• pp.1-10
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• 2003

Device characteristics of the Metal-Ferroclecric-Semiconductor FET(MFSFET) are simulated in this study. The field-dependent polarization model and the square-law FET model are employed in our simulation. C-V$_{G}$ curves generated from our MFSFET simulation exhibit the accumulation, the depletion and the inversion regions clearly. The capacitance, the subthreshold and the drain current characteristics as a function of gate bias exhibit the memory windows are 1 and 2 V, when the coercive voltages of ferroelectric are 0.5 and 1 V respectively. I$_{D}$-V$_{D}$ curves are composed of the triode and the saturation regions. The difference of saturation drain currents of the MFSFET device at the dual threshold voltages in I$_{D}$-V$_{D}$ curve is 1.5, 2.7, 4.0, and 5.7 ㎃, when the gate biases are 0, 0.1, 0.2 and 0.3V respectively. As the drain current is demonstrated after time delay, PLZT(10/30/70) thin film shows excellent reliability as well as the decrease of saturation current is about 18 % after 10 years. Our simulation model is expected to be very useful in the estimation of the behaviour of MFSFET devices.T devices.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.453-456
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• 1999

The Si-SiO$_2$interface trap and nitride bulk trap distribution of SONOSFET(polysilicon-oxide-nitride-oxide-semiconductor)NVSM(nonvolatile semiconductor memory) cell were investigated by single charge pumping method. The used device was fabricated by 0.35 7m standard logic fabrication including the ONO cell process. This ONO dielectric thickness is tunnel oxide 24 $\AA$, nitride 74 $\AA$, blocking oxide 25 $\AA$, respectively. Keeping the pulse base level in accumulation and pulsing the surface into inversion with increasing amplitudes, the charge pumping current flow from the single junction. Using the obtained I$_{cp}$-V$_{h}$ curve, the local V$_{t}$ distribution, doping concentration, lateral interface trap distribution and lateral memory trap distribution were extracted. The maximum N$_{it}$($\chi$) of 1.62$\times$10$^{19}$ /cm$^2$were determined.mined.d.

• Journal of the Korean Chemical Society
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• v.21 no.6
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• pp.395-403
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• 1977

Significant structure theory was applied to some liquid mixture systems ranging from simple monatomic molecule systems to polyatomic molecule systems, and the activity coefficients ${\gamma}$ of the liquid mixture systems were calculated over whole mole fractions using the following thermodynamic relation $RTln_{{\gamma}i} = (\frac{{\partial A}^E}{{\partial N}_i})_{T,V,N_i} $ where $A^E$ represents the excess Helmholtz free energy, and $N_i$ is the number of molecules of component i. The activity coefficients of the solutions such as monatomic molecule systems (Ar-Kr, Kr-Xe) and diatomic molecule systems $(Ar-O_2,\;N_2-CO)$ and $CH_4-Kr$ systems whose components have similar shapes for intermolecular potential curves were calculated successfully only with the ${\delta}E_s$, correction parameter for energy $E_s$, for mixture systems. For other systems such as $Ar-N_2,\;O_2-N_2\;and\;CH_4-C_3H_8$ whose components have dissimilar intermolecular potential curve shapes an additional correction parameters ${\delta}$V and even one more parameter ${\delta}$n were necessary [see Eqs.(10)∼(12)].

• Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
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• 2002.02a
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• pp.10-12
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• 2002

Single Josephson junctions of 50 $\mu$m $\times$ 50 $\mu$m were fabricated for several oxidation conditions to investigate controllabilities of critical current density ($J_{c}$) with the standard KRISS processes. Considering the self-field effect suppressing the observed critical current ($I_{c}$) at high $J_{c}$ region, we could reasonably estimate $J_{c}$ values from I-V observations. The dependence of the estimated $J_{c}$ as a function of exposure, which is equal to pressure(P) times time(t), was well fitted to a curve of $J_{c}$ ~ $(Pt)^{-0.36}$. The maximum $J_{c}$ value at the controllability margin was found to be 4 kA/$cm^{2}$ with the current equipment set up.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1992.11a
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• pp.136-140
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• 1992

The purpose of this research is to develop the lithium secondary battery. This paper describes the preparation, electrochemical properties of nontstoichiometric(NS)-$V_6O_{13}$ and characteristics of Li/$V_6O_{13}$ secondary battery. NS-$V_6O_{13}$ was prepared by thermal decomposition of $NH_4VO_3$ under Ar stream of 140ml/min~180ml/min flow rate. And then, this NS-$V_6O_{13}$ was used for cathode active material. Cathode sheet was prepared by compressing the composite of NS-$V_6O_{13}$, acetylene black(A.B) and teflon emulsion (T.E). Characteristics of the test cell are summarised as follows. Oxidation capacity of NS-$V_6O_{13}$ was about 20% less than its reduction capacity. A part of NS-$V_6O_{13}$ cathode active material showed irreversible reaction in early charge-discharge cycle. This phenomena seems to be caused by irreversible incoporation/discoporation of lithium cation to/from NS-$V_6O_{13}$ host. Discharge characteristics curve of Li/$V_6O_{13}$ cell showed 4 potential plateaus. Charge-discharge capacity was declined in the beginning of cycling and slowly increased in company with increasing of coulombic efficiency. Energy density per weight of $V_6O_{13}$ cathode material was as high as 522Wh/kg~765Wh/kg.

• Journal of Pharmaceutical Investigation
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• v.39 no.3
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• pp.177-183
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• 2009

A rapid and sensitive reversed-phase high performance liquid chromatography (HPLC) method was developed for the determination of piroxicam in the rabbit plasma. After a treatment of plasma sample by liquid-liquid extraction, the drug was analyzed on an HPLC system with ultraviolet detection at 330 nm. HPLC was carried out using reversed-phase isocratic elution with a C18 column, a mobile phase of a mixture of acetonitril, doubly deionized water and acetic acid 43.74:56.00:0.26 v/v%) at a flow rate of 1.1 mL/min. The chromatograms showed good resolution and sensitivity and no interference of plasma. The calibration curve for the drug in plasma sample was linear over the concentration range of 0.01-2.0 ${\mu}$g/mL. The intra- and inter-day assay accuracies of this method ranged from 86.82% to 108.33% of normal values and the precision did not exceed 13% of relative standard deviation. The plasma concentration of piroxicam decreased to below the quantifiable limit at 12 hr after the i.v. bolus administration to rabbits following dose of 0.375 mg/kg yielding a apparen t plasma half life of 1.38 hr. The transdermal route prolongs plasma levels of piroxicam. The bioavailability, calculated from the dose-adjusted ratio of the $AUC_{transdermal}$ to the $AUC_{i.v.}$, was 7.44%. The plasma concentration of piroxicam was detected by 48 hr after the transdermal administration of patch at a dose of 32 mg/kg. This method was suitable for cutaneous absorption studies of piroxicam in the rabbit after transdermal administration of different types of dosages of the drug.

• KEPCO Journal on Electric Power and Energy
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• v.2 no.4
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• pp.601-608
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• 2016

The electrical characteristics of the soil where a ground electrode is buried vary with regions, seasons and environmental factors. Electrical discharge in the vicinity of the ground electrode will occur differently and significantly affect the performance of the grounding system. It is necessary to analyze discharge and ionization characteristics of soils when the grounding system is designed. The aims of this investigation are to understand correlation between the soil ionization and the transient ground impedance. This paper presents the experimental results on the soil ionization parameters and the transient ground resistance due to the soil ionization around a hemispherical ground electrode stressed by lightning impulse voltages.

• YAKHAK HOEJI
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• v.55 no.3
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• pp.260-266
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• 2011

Two types of water soluble lysine salts of ibuprofen were prepared and evaluated. Physicochemical properties for ibuprofen-l-lysinate (IBL-l), ibuprofen-dl-lysinate (IBL-dl) and ibuprofen (IB) were studied on melting point, specific ratation, UV spectra and $^1H$-NMR spectra. There were not differences between IBL-dl and IBL-l in UV spectra and $^1H$-NMR spectra. The pharmacokinetic parameters of IB were compared to those of its lysine salts (IBL-l and IBL-dl) after i.v. or oral administration at the dose of 50 mg/kg (calculated as IB). Total body clearance ($CL_t$) and area under the plasma concentration-time curve (AUC) were not different between IB group and IBL groups after i.v. administration. On the other hand, IBL-l and IBL-dl produced peak plasma concentrations ($C_{max}$) significantly ealier and higher than IB. Time to reach peak concentration ($T_{max}$) after IBL administration was lower than that after IB administration. There was no difference in AUC across all different groups (IB, IBL-l and IBL-dl) after oral administration. However, absorption rate constant ($k_a$) of IBL-l and IBL-dl were significantly increased than that of IB. These results indicated that the administration of IBL-l and IBL-dl may be advantageous if rapid and reliable onset of pain relief is required.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.04b
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• pp.134-138
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• 2000

The physical, electrical and piezoresitive characteristics of CrN(chromiun nitride) thin-films on silicon substrates have been investigated for use as strain gauges. The thin-film depositions have been carried out by DC reactive magnetron sputtering in an argon-nitrogen atmosphere(Ar-(5~25 %)$N_2$). The deposited CrN thin-films with thickness of $3500{\AA}$nd annealing conditions($300^{\circ}C$, 48 hr) in Ar-10 % $N_2$ deposition atmosphere have been selected as the ideal piezoresistive material for the strain gauges. Under optimum conditions, the CrN thin-films for the strain gauges is obtained a high electrical resistivity, $\rho=1147.65\;{\mu}{\Omega}cm$, a low temperature coefficient of resistance, TCR=-186 ppm/$^{\circ}C$ and a high temporal stability with a good longitudinal gauge factor, GF=11.17.