• Journal of Adhesion and Interface
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• v.20 no.4
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• pp.146-154
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• 2019

In this study, alkoxysilane-functionalized amphiphilic polymer (AFAP), which have hydrophilic segment and hydrophobic segment functionalized by alkoxysilane group at the same backbone, was synthesized and used as a dispersant and control agent for reaction rate in the preparation of colloidally stable organic-inorganic (O-I) hybrid sols. After reaction with fluorosilane compounds, fluorinated O-I hybrid sols were prepared and coated onto glass substrate to form hydrophobic O-I hybrid coating films through low-temperature curing process. Surface hardness and hydrophobicity of cured coating films were varied with type of solvent and composition of AFAP and fluorinated alkoxysilane compounds. At appropriate solvent and composition of fluorinated alkoxysilane compounds, O-I hybrid coating film having high transparency and surface hardness could be prepared, which could be applicable to cover window of solar cell and displays.

• IEMEK Journal of Embedded Systems and Applications
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• v.14 no.2
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• pp.97-102
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• 2019

Multi-queue I/O block layer has been recently employed in Linux kernel to support fast storage devices such as NVMe SSDs, but it lacks differentiated I/O services yet. In this paper, we propose an I/O scheduling scheme that can improve the user responsiveness of foreground processes, which are closely related to user satisfaction. To this end, we redesign the existing multi-queue block layer to classify the I/O requests from foreground processes and schedule them by exploiting the feature of NVMe interface. Experimental results show that latency and launch time of the foreground processes have been significantly improved compared to original Linux kernel.

• Bulletin of the Korean Chemical Society
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• v.35 no.2
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• pp.569-574
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• 2014

Inverted bulk hetero-junction polymer solar cells (iPSC) composed of P3HT/PC61BM blends on the ZnO modified with benzoic acid derivatives-based self-assembled monolayers (SAM) are fabricated. Compared with the device using the pristine ZnO, the devices with ZnO surface modified SAMs derived from benzoic acid such as 4-(diphenylamino)benzoic acid (DPA-BA) and 4-(9H-carbazol-9-yl)benzoic acid (Cz-BA) as an electron transporting layer show improved the performances. It is mainly attributed to the favorable interface dipole at the interface between ZnO and the active layer, the eective passivation of the ZnO surface traps, decrease of the work function and facilitating transport of electron from PCBM to ITO electrode. The power conversion eciency (PCE) of iPSCs based on DPA-BA and Cz-BA treated ZnO reaches 2.78 and 2.88%, respectively, while the PCE of the device based on untreated ZnO is 2.49%. The open circuit voltage values ($V_{oc}$) of the devices with bare ZnO and SAM treated ZnO are not much different. Whereas, higher the fill factor (FF) and lower the series resistance ($R_s$) are obtained in the devices with SAMs modification.

• Journal of the Korean institute of surface engineering
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• v.32 no.6
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• pp.647-657
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• 1999

Due to the inherently poor adhesion strength of Cu-based leadframe/EMC (Epoxy Molding Compound) interface, popcorn cracking of thin plastic packages frequently occurs during the solder reflow process. In the present work, in order to enhance the adhesion strength of Cu-based leadframe/EMC interface, black-oxide layer was formed on the leadframe surface by chemical oxidation of leadframe, and then oxidized leadframe sheets were molded with EMC and machined to form SDCB (Sandwiched Double-Cantilever Beam) and SBN (Sandwiched Brazil-Nut) specimens. SDCB and SBN specimens were designed to measure the adhesion strength between leadframe and EMC in terms of critical energy-release rate under quasi-Mode I ($G_{IC}$ ) and mixed Mode loading ($G_{C}$ /) conditions, respectively. Results showed that black-oxide treatment of Cu-based leadframe initially introduced pebble-like X$C_2$O crystals with smooth facets on its surface, and after the full growth of $Cu_2$O layer, acicular CuO crystals were formed atop of the $Cu_2$O layer. According to the result of SDCB test, $Cu_2$O crystals on the leadframe surface did not increase ($G_{IC}$), however, acicular CuO crystals on the $Cu_2$O layer enhanced $G_{IC}$ considerably. The main reason for the adhesion improvement seems to be associated with the adhesion of CuO to EMC by mechanical interlocking mechanism. On the other hand, as the Mode II component increased, $G_{C}$ was increased, and when the phase angle was -34$^{\circ}$, crack Kinking into EMC was occured.d.

• Korean Journal of Materials Research
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• v.27 no.7
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• pp.364-368
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• 2017

We performed temperature dependent current-voltage (I-V) measurements to characterize the electrical properties of $Au/Al_2O_3/n-Ge$ metal-insulator-semiconductor (MIS) diodes prepared with and without $H_2O$ prepulse treatment by atomic layer deposition (ALD). By considering the thickness of the $Al_2O_3$ interlayer, the barrier height for the treated sample was found to be 0.61 eV, similar to those of Au/n-Ge Schottky diodes. The thermionic emission (TE) model with barrier inhomogeneity explained the final state of the treated sample well. Compared to the untreated sample, the treated sample was found to have improved diode characteristics for both forward and reverse bias conditions. These results were associated with the reduction of charge trapping and interface states near the $Ge/Al_2O_3$ interface.

• JSTS:Journal of Semiconductor Technology and Science
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• v.16 no.6
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• pp.880-888
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• 2016

In this paper, we propose a new HDFS-AIO framework to enhance HDFS with Adaptive I/O System (ADIOS), which supports many different I/O methods and enables applications to select optimal I/O routines for a particular platform without source-code modification and re-compilation. First, we customize ADIOS into a chunk-based storage system so its API semantics can fit the requirement of HDFS easily; then, we utilize Java Native Interface (JNI) to bridge HDFS and the tailored ADIOS. We use different I/O patterns to compare HDFS-AIO and the original HDFS, and the experimental results show the design feasibility and benefits. We also examine the performance of HDFS-AIO using various I/O techniques. There have been many studies that use ADIOS, however our research is expected to help in expanding the function of HDFS.

• Journal of the Semiconductor & Display Technology
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• v.16 no.2
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• pp.9-14
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• 2017

$ISnO_2$ thin films were prepared on p-type and n-type Si substrates to research the interface characteristics between $SnO_2$ and substrate. After the annealing processes, the amorphous structure was formed at the interface to make a Schottky contact. The O 1s spectra showed the bond of 530.4 eV as an amorphous structure, and the Schottky contact. The analysis by the deconvoluted spectra was observed the drastic variation of oxygen vacancies at the amorphous structure because of the depletion layer is directly related to the oxygen vacancy. $SnO_2$ thin film changed the electrical properties depending on the characteristics of substrates. It was confirmed that it is useful to observe the Schottky contact's properties by complementary using the XPS analysis and I-V measurement.

• Journal of KIISE:Computer Systems and Theory
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• v.33 no.1_2
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• pp.79-91
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• 2006

The intelligent disk can improve the overall performance of the I/O subsystem by processing the I/O operations in the disk side. At present time, however, realizing the intelligent disk seems to be impossible because of the limitation of the I/O subsystem and the lack of the backward compatibility with the traditional I/O interface scheme. In this paper, we proposed new model for the intelligent disk that dynamically optimizes the I/O subsystem using the information that is only related to the physical sector. In this way, the proposed model does not break the compatibility with the traditional I/O interface scheme. For these works, the boosting algorithm that upgrades a weak learner by repeating teaming is used. If the last learner classifies a recent I/O workload as the multimedia workload, the disk reads more sectors. Also, by embedding this functionality as a firmware or a embedded OS within the disk, the overall I/O subsystem can be operated more efficiently without the additional workload.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.7 no.3
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• pp.494-503
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• 1997

We investigated the initial stages of formation of the Cu/polyimide interface using another two methods by X-ray photoelectron spectroscopy. : One, in-situ measurement with increasing of Cu deposition thickness onto polyimide(PI), the other, measurement with decreasing of Cu thickness of Cu/pI film by $Ar^+$ ion etching. From these results, we find that the chemical reactions exist in Cu/PI interface. However, the measured chemical reactions were different according to experimental method.

• Journal of the Korea Society of Computer and Information
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• v.29 no.1
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• pp.139-149
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• 2024

In this paper, we propose the standard architecture for the IFF interface SW in naval combat management system(CMS). The proposed standard interface architecture is a method designed to reduce modification efforts and man-month of reliability test for the existing the IFF interface SW of 11 types. We identified highly dependent CMS and GFE information, leading to the redefinition of standard requirements and functions, and proceeded with the initial design applying the Naval Shield Component Platform(NSCP). Subsequently, using the Feature Model, we derived additional common and variable elements for the interface of multiple CMS and GFE. Considering the S.O.L.I.D principles, we designed the final architecture. The proposed IFF Interface SW, based on the standard architecture, is expected to enhance management efficiency through a common architecture, increase code reusability and scalability, and reduce development costs by shortening reliability testing times.