• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.08a
• /
• pp.116.2-116.2
• /
• 2013

최근 그래핀, hexagonal boron nitride (h-BN) 및 $MoS_2$ (molybdenum disulfide)와 같은 2차원 결정 물질들은 무어의 법칙 (Moore's Law)를 뛰어넘어 계속적인 소자의 소형화를 가능케 하고 또한 대면적, 저비용 소자 개발을 가능케 하는 우수한 특성을 가진 차세대 반도체 트랜지스터 소재로 각광받고 있다. $MoS_2$는 bulk 상태일 때는 1.2 eV의 indirect 밴드갭을 가지지만 단층형태일 때는 1.8 eV의 direct 밴드갭을 가지며 dielectric screening 기법 등을 통해 mobility를 향상시킬 수 있는 것으로 연구된 바 있다. 본 연구에서는 화학기상증착(chemical vapor deposition, CVD)법을 이용하여 $MoS_2$박막을 형성하기 위한 기초연구인 Mo전구체의 특성 평가 및 적합한 공정조건 개발 연구를 수행하였다. 사용한 전구체는 $Mo(CO)^6$ (Molybdenum hexacarbonyl)이고, 온도 및 압력, 반응기체($H_2S$, Hydrogen sulfide) 유량 등의 공정 조건 변화에 따른 거동을 Fourier transform infrared spectroscopy (FT-IR) 시스템을 사용하여 측정하였다. 또한 $Mo(CO)^6$의 분자구조를 상용 프로그램인 Gaussian으로 시뮬레이션 하여 실제 FT-IR 측정 결과값과 비교 분석하였다. 화학기상증착법을 이용한 $MoS_2$ 증착조건 최적화를 위하여 다양한 온도, 유량, 압력, 및 기판 종류에 대하여 증착 실험을 수행하였으며, 증착된 샘플은 scanning electron microscope (SEM), Raman spectroscopy를 이용하여 분석하였다.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.08a
• /
• pp.200.1-200.1
• /
• 2013

실리콘 태양전지 표면에는 구조적인 결함에 의해 소수 캐리어의 재결합이 일어난다. 재결합에 의해 캐리어의 반송자 수명은 줄어들게 되고, 태양전지의 효율은 감소하게 된다. 이를 줄이기 위해 태양전지 전 후면에 패시베이션을 하게 되는데, 이번 연구는 단결정 실리콘 태양전지 전면에 SiNx막을 증착함으로 수소 패시베이션이 반송자 수명에 미치는 영향에 대하여 연구하였다. 공정을 위해 $156{\times}156mm^2$, 200 ${\mu}m$, 0.5-3.0 ${\Omega}{\cdot}cm$ and p-type 단결정 실리콘 웨이퍼를 사용하였고, SiNx막을 올리기 전에 KOH 8.5% 용액으로 SDR을 실행하였다. RF-PECVD 장비로 SiNx 막을 증착하였고 증착 온도는 $200{\sim}400^{\circ}C$, 반응기 내부의 압력을 200~1,000 mtorr, SiH4/NH3/N2 각각의 가스 비율 조절, 그리고 플라즈마 RF power 변화시킴에 따라 증착된 SiNx막의 균일도 및 특성을 분석하였다. 반사광 측정 장비인 Reflectometer장비로 막의 두께와 굴절률, 반사율을 측정하였고, 반송자 수명을 측정하여 태양전지의 표면결함을 최대한 패시베이션 시켜주는 조건에 대한 연구를 수행하였다.

• Geomechanics and Engineering
• /
• v.33 no.2
• /
• pp.121-131
• /
• 2023

Clay sedimentation has been widely analyzed for its application in a variety of geotechnical constructions such as mine tailing, artificial islands, dredging, and reclamation. Chemical flocculants such as aluminum sulfate (Al₂(SO₄)₃), ferric chloride (FeCl₃), and ferric sulfate (Fe(SO₄)₃), have been adopted to accelerate the settling behaviors of clays. As an alternative clay flocculant with natural origin, this study investigated the settling of xanthan gum-treated kaolinite suspension in deionized water. The sedimentation of kaolinite in solutions of xanthan gum biopolymer (0%, 0.1%, 0.5%, 1.0%, and 2.0% in a clay mass) was measured until the sediment height was stabilized. Kaolinite was aggregated by xanthan gum via a direct electrical interaction between the negatively charged xanthan gum molecules and positively charged edge surface and via hydrogen bonding with kaolinite particles. The results revealed that the xanthan gum initially bound kaolinite aggregates, thereby forming larger floc sizes. Owing to their greater floc size, the aggregated kaolinite flocs induced by xanthan gum settled faster than the untreated kaolinite. Additionally, X-ray computed tomography images collected at various depths from the bottom demonstrated that the xanthan gum-induced aggregation resulted in denser sediment deposition. The findings of this study could inspire further efforts to accelerate the settling of kaolinite clays by adding xanthan gum.

• Nuclear Engineering and Technology
• /
• v.56 no.2
• /
• pp.546-551
• /
• 2024

As an effective methods of plasma heating, neutral beam injection (NBI) systems based on negative hydrogen ion sources will be utilized in future magnetic-confinement nuclear fusion experiments. Because of the collisions between the fast negative ions and the neutral background gas, the positive ions are inevitable created in the acceleration region in the negative NBI system. These positive ions are accelerated back into the ion source and become high energy backstreaming ions. In order to explore the characters of backstreaming ions, the track and power deposition of backstreaming H⁺ beam is estimated using the experimental and simulation methods at NNBI test facility. Results show that the flux of backstreaming positive ions is 1.93 % of that of negative ion extraction from ion source, and the magnet filed in the beam source has an effect on the backstreaming positive ions propagation.

• Journal of the Korean Electrochemical Society
• /
• v.23 no.2
• /
• pp.25-38
• /
• 2020

Photoelectrochemical water splitting has been considered as the most promising technology for generating hydrogen energy. Transition metal dichalcogenide (TMD) compounds have currently attracted tremendous attention due to their outstanding ability towards the catalytic water-splitting hydrogen evolution reaction (HER). Herein, we report the synthesis method of various transition metal dichalcogenide including MoS₂, MoSe₂, WS₂, and WSe₂ nanosheets as excellent catalysts for solar-driven photoelectrochemical (PEC) hydrogen evolution. Photocathodes were fabricated by growing the nanosheets directly onto Si nanowire (NW) arrays, with a thickness of 20 nm. The metal ion layers were formed by soaking the metal chloride ethanol solution and subsequent sulfurization or selenization produced the transition metal chalcogenide. They all exhibit excellent PEC performance in 0.5 M H₂SO₄; the photocurrent reaches to 20 mA cm^-2 (at 0 V vs. RHE) and the onset potential is 0.2 V under AM1.5 condition. The quantum efficiency of hydrogen generation is avg. 90%. The stability of MoS₂ and MoSe₂ is 90% for 3h, which is higher than that (80%) of WS₂ and WSe₂. Detailed structure analysis using X-ray photoelectron spectroscopy for before/after HER reveals that the Si-WS₂ and Si-WSe₂ experience more oxidation of Si NWs than Si-MoS₂ and Si-MoSe₂. This can be explained by the less protection of Si NW surface by their flake shape morphology. The high catalytic activity of TMDs should be the main cause of this enhanced PEC performance, promising efficient water-splitting Si-based PEC cells.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2016.02a
• /
• pp.341-341
• /
• 2016

The discovery of light emission in nanostructured silicon has opened up new avenues of research in nano-silicon based devices. One such pathway is the application of silicon quantum dots in advanced photovoltaic and light emitting devices. Recently, there is increasing interest on the silicon quantum dots (c-Si QDs) films embedded in amorphous hydrogenated silicon-nitride dielectric matrix (a-SiNx: H), which are familiar as c-Si/a-SiNx:H QDs thin films. However, due to the limitation of the requirement of a very high deposition temperature along with post annealing and a low growth rate, extensive research are being undertaken to elevate these issues, for the point of view of applications, using plasma assisted deposition methods by using different plasma concepts. This work addresses about rapid growth and single step development of c-Si/a-SiNx:H QDs thin films deposited by RF (13.56 MHz) and ultra-high frequency (UHF ~ 320 MHz) low-pressure plasma processing of a mixture of silane (SiH4) and ammonia (NH3) gases diluted in hydrogen (H2) at a low growth temperature ($230^{\circ}C$). In the films the c-Si QDs of varying size, with an overall crystallinity of 60-80 %, are embedded in an a-SiNx: H matrix. The important result includes the formation of the tunable QD size of ~ 5-20 nm, having a thermodynamically favorable <220> crystallographic orientation, along with distinct signatures of the growth of ${\alpha}$-Si3N4 and ${\beta}$-Si3N4 components. Also, the roles of different plasma characteristics on the film properties are investigated using various plasma diagnostics and film analysis tools.

• Journal of the Korean Electrochemical Society
• /
• v.10 no.2
• /
• pp.110-115
• /
• 2007

Solid oxide fuel cell(SOFC) has high fuel flexibility due to its high operating temperatures. Hydrocarbonaceous fuels such as diesel has several advantages such as high energy density and established infrastructure for fuel cell applications. However diesel reforming has technical problems like coke formation in a reactor, which results in catastrophic failure of whole system. Performance degradation of diesel autothermal reforming (ATR) leads to increase of undesirable hydrocarbons at reformed gases and subsequently degrades SOFC performance. In this study, we investigate the degradation of SOFC performance(OCV, open circuit voltage) under hydrocarbon(n-Butane) feeds and characteristics of diesel performing under various ratios of reactants($H_2O/C,\;O_2/C$ molar ratios) for improvement of SOFC performance. Especially we achieved relatively high performance of diesel ATR under $H_2O/C=0.8,\;O_2/C=3$ condition.

• Korean Journal of Materials Research
• /
• v.3 no.5
• /
• pp.459-465
• /
• 1993

By making the inter-metal PECVD $SiO_2$ as a Si rich oxide under the SOG, the hydrogen and water related diffusants could be captured a t SI dangling bonds. This gettering process was known to prevent the device characteristics degradations related to the H, $H_20$. The basic characteristics of Si rich oxide have been studied according to changing high/low frequency power and $SiH_4/N_2O$ gas flow ratio in PECVD. As increase in low frequency power, deposition rate decreased but K.I. and compressive stress increased. Decrease of the water peaks of FTIR spectra at the wave number range of 3300~3800$\textrm{cm}^{-1}$' also indicated that intensty the films were densified. As increase in SiH, gas flow rate, deposition rate, R.I. and etch rate increased while compressive stress decreased. F'TIK spectra showed that peak intensity corresponding to Si-0-Si stretching vibration decreased and shifted to the lower wave numbers. But AES showed that Si dangl~ng bonds were increased as a result of lower Si:O(l: 1.23) ratlo inthe Si rich oxide as compared to Si : O(1 : 1.98) ratio of usual oxide.

• Journal of Korean Society of Forest Science
• /
• v.86 no.1
• /
• pp.98-104
• /
• 1997

Soil pollution intensity at Mt. Namsan in Seoul city which was expected to show significant soil contamination due to long-term air pollution was evaluated by comparing soil chemical properties at Mt. Kyebangsan in Hongcheon area as a control, and the bacteria participating in nitrogen or sulfur mineralization were assayed simultaneously in order to evaluate the validity of N and/or S mineralization bacteria as an index of soil contamination. The soil of Mt. Namsan showed 10 times higher concentration of hydrogen ion compared to that of Mt. Kyebangsan, which indicated that the soil had relatively been acidified seriously. Especially, large amount of canons were thought to be leached out from the soil, while the amount of extractable Al was getting larger and larger, which result in serious problems in soil ecosystem of the mountain. I could infer from soil chemical properties of the four study sites that the major reason of soil acidification was SOx deposition. However, the sulfur-reducing bacteria were not significantly different between the two regions, which indicated that the microbial dynamics of the soil ecosystem was not controlled by simple factor, but by multiple factors. By the way, the dynamics of bacteria participating in denitrification process was different between the two regions, which was more active at Mt. Kyebangsan than at Mt. Namsan. Thus, the microbial assay for nitrogen mineralization is desirable to be examined as a tool for evaluating soil health or microbial activity in soil ecosystem.

• Journal of the Korean Electrochemical Society
• /
• v.3 no.4
• /
• pp.200-203
• /
• 2000

Boron doped conducting diamond thin films were grown on Si substrate by microwave plasma chemical vapor deposition from a gaseous feed of hydrogen, acetone/methanol and solid boron. The doping level of boron was ca. $10^2ppm\;(B/C)$. The Si substrate was tilted ca. $10^{\circ}$ to make Si substrate, which have different height and temperature. Experimental results showed that different crystalline of diamond thin films were made by different temperature of Si substrate. There appeared $3\~4$ steps of different crystalline morphology of diamond. To characterize the boron-doped diamond thin film, Raman spectroscopy was used for identification of crystallinity. To survey surface morphology, microscope was used. Grain size was changed gradually by different temperature due to different height. The Raman spectrum of film exhibited a sharp peak at $1334cm^{-1}$, which is characteristic of crystalline diamond. The lower position of diamond film position, the more non-diamond component peak appeared near $1550 cm^{-1}$.