• Journal of the Microelectronics and Packaging Society
• /
• v.21 no.4
• /
• pp.1-13
• /
• 2014

The paper gives an overview of the concepts, basic requirements, and trends regarding packaging technologies of power modules in hybrid (HEV) and electric vehicles (EV). Power electronics is gaining more and more importance in the automotive sector due to the slow but steady progress of introducing partially or even fully electric powered vehicles. The demands for power electronic devices and systems are manifold, and concerns besides aspects such as energy efficiency, cooling and costs especially robustness and lifetime issues. Higher operation temperatures and the current density increase of new IGBT (Insulated Gate Bipolar Transistor) generations make it more and more complicated to meet the quality requirements for power electronic modules. Especially the increasing heat dissipation inside the silicon (Si) leads to maximum operation temperatures of nearly $200^{\circ}C$. As a result new packaging technologies are needed to face the demands of power modules in the future. Wide-band gap (WBG) semiconductors such as silicon carbide (SiC) or gallium nitride (GaN) have the potential to considerably enhance the energy efficiency and to reduce the weight of power electronic systems in EVs due to their improved electrical and thermal properties in comparison to Si based solutions. In this paper, we will introduce various package materials, advanced packaging technologies, heat dissipation and thermal management of advanced power modules with extended reliability for EV applications. In addition, SiC and GaN based WBG power modules will be introduced.

• Journal of the Korea Academia-Industrial cooperation Society
• /
• v.17 no.6
• /
• pp.1-8
• /
• 2016

Current sensors are used widely in the fields of current control, monitoring, and measuring. They have become more popular with the increasing demand for smart grids in a power network, generation of renewable energy, electric cars, and hybrid cars. Although open loop Hall effect current sensors have merits, such as low cost, small size, and weight, they have low accuracy. This paper describes the design and fabrication of a 300A open loop current sensor that has high accuracy and temperature performance. The core of the current sensor was calculated numerically and the signal conditioning circuits were designed using circuit analysis software. The characteristics of the manufactured open loop current sensor of 300 A class was measured at currents up to 300 A. According to the test of the current sensor, the accuracy error and linearity error were 0.75% and 0.19%, respectively. When the temperature compensation was carried out with the relevant circuit, the temperature coefficients were less than $0.012%/^{\circ}C$ at temperatures between $-25^{\circ}C$ and $85^{\circ}C$.

• Journal of the Korea Academia-Industrial cooperation Society
• /
• v.19 no.6
• /
• pp.646-651
• /
• 2018

This paper reports that the electronic properties at a $P3HT/TiO_2$ interface associated with exciton dissociation and transport can be tailored by the insertion of a graphene quantum dot (GQD) layer. For donor/acceptor interface modification in an $ITO/TiO_2/P3HT/Al$ photovoltaic (PV) device, a continuous GQD film was prepared by a sonication treatment in solution that simplifies the conventional processes, including laser fragmentation and hydrothermal treatment, which limits a variety of component layers and involves low cost processing. The high conductivity and favorable energy alignment for exciton dissociation of the GQD layer increased the fill factor and short circuit current. The origin of the improved parameters is discussed in terms of the broad light absorption and enhanced interfacial carrier transport.