• Journal of Information Display
• /
• 제10권4호
• /
• pp.149-157
• /
• 2009

Reported herein is the architecture for a nonvolatile n-type memory paper field-effect transistor. The device was built via the hybrid integration of natural cellulose fibers (pine and eucalyptus fibers embedded in resin with ionic additives), which act simultaneously as substrate and gate dielectric, using passive and active semiconductors, respectively, as well as amorphous indium zinc and gallium indium zinc oxides for the gate electrode and channel layer, respectively. This was complemented by the use of continuous patterned metal layers as source/drain electrodes.

• Journal of KIISE:Computer Systems and Theory
• /
• 제36권6호
• /
• pp.451-462
• /
• 2009

Recently, there are many active studies to enhance low I/O performance of hard disk device. The studies on the hardware make good progress whereas those of the system software to enhance I/O performance may not support the hardware performance due to its poor progress. In this paper, we propose a new method of prefetching n-blocks into the flash memory. The proposed method consists of three steps: (1)analyzing the pattern of read requests in block units; (2)determining the number of blocks prefetched to flash memory; (3)replacing blocks according to block replacement policy. The proposed method can reduce the latency time of hard disk and optimize the power consumption of the computer system. Experimental results show that the proposed dynamic n-block method provides better average response time than that of the existing AMP(Adaptive multi stream prefetching) method by 9.05% and reduces the average power consumption than that of the existing AMP method by 11.11%.

• Journal of Sensor Science and Technology
• /
• 제24권1호
• /
• pp.41-46
• /
• 2015

In this work, pure hierarchical ZnO structure was prepared using a simple hydrothermal method, and Ag nanoparticles doped hierarchical ZnO structure was synthesized uniformly through photochemical route. The reduced graphene oxide (rGO) has been synthesized by typical Hummer's method and reduced by hydrazine. Prepared Ag/ZnO nanostructures are uniformly dispersed on the surface of rGO sheets using ultrasonication process. The synthesized samples were characterized by SEM, TEM, EDS, XRD and PL spectra. The average size of prepared ZnO microspheres was around $2{\sim}3{\mu}m$ and showed highly uniform. The average size of doped-Ag nanoparticles was 50 nm and decorated into ZnO/rGO network. The $C_2H_2$ gas sensing properties of as-prepared products were investigated using resistivity-type gas sensor. Ag/ZnO-rGO based sensors exhibited good performances for $C_2H_2$ gas in comparison with the Ag/ZnO. The $C_2H_2$ sensor based on Ag/ZnO-rGO had linear response property from 3~1000 ppm of $C_2H_2$ concentration at working temperature of $200^{\circ}C$. The response values with 100 ppm $C_2H_2$ at $200^{\circ}C$ were 22% and 78% for Ag/ZnO and Ag/ZnO-rGO, respectively. In additions, the sensor still shows high sensitivity and quick response/recovery to $C_2H_2$ under high relative humidity conditions. Moreover, the device shows excellent selectivity towards to $C_2H_2$ gas at optimal working temperature of $200^{\circ}C$.

• Proceedings of the Korean Vacuum Society Conference
• /
• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
• /
• pp.341-341
• /
• 2012

Recently, oxide semi-conductor materials have been investigated as promising candidates replacing a-Si:H and poly-Si semiconductor because they have some advantages of a room-temperature process, low-cost, high performance and various applications in flexible and transparent electronics. Particularly, amorphous indium-gallium-zinc-oxide (a-IGZO) is an interesting semiconductor material for use in flexible thin film transistor (TFT) fabrication due to the high carrier mobility and low deposition temperatures. In this work, we demonstrated improvement of flexibility in IGZO TFTs, which were fabricated on polyimide (PI) substrate. At first, a thin poly-4vinyl phenol (PVP) layer was spin coated on PI substrate for making a smooth surface up to 0.3 nm, which was required to form high quality active layer. Then, Ni gate electrode of 100 nm was deposited on the bare PVP layer by e-beam evaporator using a shadow mask. The PVP and $Al_2O_3$ layers with different thicknesses were used for organic/inorganic multi gate dielectric, which were formed by spin coater and atomic layer deposition (ALD), respectively, at $200^{\circ}C$. 70 nm IGZO semiconductor layer and 70 nm Al source/drain electrodes were respectively deposited by RF magnetron sputter and thermal evaporator using shadow masks. Then, IGZO layer was annealed on a hotplate at $200^{\circ}C$ for 1 hour. Standard electrical characteristics of transistors were measured by a semiconductor parameter analyzer at room temperature in the dark and performance of devices then was also evaluated under static and dynamic mechanical deformation. The IGZO TFTs incorporating hybrid gate dielectrics showed a high flexibility compared to the device with single structural gate dielectrics. The effects of mechanical deformation on the TFT characteristics will be discussed in detail.

• Proceedings of the Korean Vacuum Society Conference
• /
• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
• /
• pp.158-158
• /
• 2012

A new kind of organic-inorganic hybrid polymer, poly(tetraphenyl)silole siloxane (PSS), was invented and synthesized for realization of its unique charge trap properties. The organic portions consisting of (tetraphenyl)silole rings are responsible for electron trapping owing to their low-lying LUMO, while the Si-O-Si inorganic linkages of high HOMO-LUMO gap provide the intrachain energy barrier for controlling electron transport. Such an alternation of the organic and inorganic moieties in a polymer may give an interesting quantum well electronic structure in a molecule. The PSS thin film was fabricated by spin-coating of the PSS solution in THF organic solvent onto Si-wafer substrates and curing. The electron trapping of the PSS thin films was confirmed by the capacitance-voltage (C-V) measurements performed within the metal-insulator-semiconductor (MIS) device structure. And the quantum well electronic structure of the PSS thin film, which was thought to be the origin of the electron trapping, was investigated by a combination of theoretical and experimental methods: density functional theory (DFT) calculations in Gaussian03 package and spectroscopic techniques such as near edge X-ray absorption fine structure spectroscopy (NEXAFS) and photoemission spectroscopy (PES). The electron trapping properties of the PSS thin film of quantum well structure are closely related to intra- and inter-polymer chain electron transports. Among them, the intra-chain electron transport was theoretically studied using the Atomistix Toolkit (ATK) software based on the non-equilibrium Green's function (NEGF) method in conjunction with the DFT.

• Applied Chemistry for Engineering
• /
• 제23권4호
• /
• pp.359-366
• /
• 2012

Zn-Air energy storage cell is an attractive type of batteries due to its theoretical gravimetric energy density, cost-effective structure and environmental-friendly characteristics. The chargeability is the most critical in various industrial applications such as smart portable device, electric vehicle, and power storage system. Thus, it is necessary to reduce large overpotential of oxygen reduction/evolution reaction, the irreversibility of Zn anode, and carbonation in alkaline electrolyte. In this review, we try to introduce recent studies and developments of bi-functional air cathode, enhanced charge efficiency via modification of Zn anode structure, and blocking side reactions applying hybrid organic-aqueous electrolyte for high power density rechargeable Zn-Air energy storage cells.

• The Journal of Korean Institute of Communications and Information Sciences
• /
• 제35권11C호
• /
• pp.889-895
• /
• 2010

MIMO system generally requires more than one antenna at the communication device. However, many wireless devices are limited by size, cost or hardware complexity to one antenna. To overcome such restrictions, we used a new technique, called cooperative communication. We propose a new cooperative transmission strategy system using cross-layer coding method base on H-ARQ for optimal communication. Proposed cooperative H-ARQ system that can improve the above problems and can get the better performance. In proposed cooperative system with H-ARQ method, if the received signal from source node is satisfied by the destination preferentially, the destination transmit ACK message to both relay node and source node, and then recovers the received signal. In addition, if ARQ message indicates NACK message, relay node operates selective retransmission. Based on the simulation results in aspect to BER performance and throughput, the proposed method which combined cooperative system with H-ARQ based on cross-layer coding can improve spectral efficiency reliability of system compared with that of general one by one system.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• 제24권9호
• /
• pp.701-709
• /
• 2011

In semiconductor wafer fabrication, etching is one of the most critical processes, by which a material layer is selectively removed. Because of difficulty to correct a mistake caused by over etching, it is critical that etch should be performed correctly. This paper proposes a new approach for etch endpoint detection of small open area wafers. The traditional endpoint detection technique uses a few manually selected wavelengths, which are adequate for large open areas. As the integrated circuit devices continue to shrink in geometry and increase in device density, detecting the endpoint for small open areas presents a serious challenge to process engineers. In this work, a high-resolution optical emission spectroscopy (OES) sensor is used to provide the necessary sensitivity for detecting subtle endpoint signal. Partial Least Squares (PLS) method is used to analyze the OES data which reduces dimension of the data and increases gap between classes. Support Vector Machine (SVM) is employed to detect endpoint using the data after PLS. SVM classifies normal etching state and after endpoint state. Two data sets from OES are used in training PLS and SVM. The other data sets are used to test the performance of the model. The results show that the trained PLS and SVM hybrid algorithm model detects endpoint accurately.

• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
• /
• 한국소음진동공학회 2005년도 추계학술대회논문집
• /
• pp.518-521
• /
• 2005

The Structures or buildings nowadays draw more complexity in design due to space limitation and other factor that affect the height and dimensions, that results to instability. So the various methods have been carried out to improve the safety factor from an earthquake or a boom until recently. But, it is very hard to get model precisely because these structures are the non-linear and multi-variable systems. For this reason, we developed the active control system that is applied the adaptive control method on the U type Tuned Liquid Damper(TLD) passive control system. It is proven that the proposed active control strategy of the plate carrying U type TLD system is the more effective control method to suppress the vibration of the structure. The entire hybrid control system is composed of the actuator acted in the opposite direction of the TLD system's motion direction and the active control device with an air pressure adjuster. This paper proposed the adaptive control methods to improve the problem of U type TLD system which is used widely for the passive control of the building. And it is proved by the simulation. In advanced, it is developed the pressure control method that is improved the hybrid controller's performance by using air chamber pressure controller. These methods take the advantage of the decrease of the maximum displacement by using the controller as soon as the impact is loaded. This is a very important element for the safety design and economic design of structures.

• Journal of Chest Surgery
• /
• 제52권5호
• /
• pp.335-341
• /
• 2019

Background: The endovascular approach to aortic disease treatment has been increasingly utilized in the past 2 decades. This study aimed to determine the long-term results of using the Seal thoracic stent graft. Methods: We retrospectively reviewed the outcomes of patients who underwent thoracic endovascular aortic repair or a hybrid procedure using the Seal thoracic stent graft (S&G Biotech, Seongnam, Korea) from January 2008 to July 2018 at a single institution. We investigated in-hospital mortality and the incidence of postoperative complications. We also investigated the mid-term survival rate and incidence of aorta-related complications. Results: Among 72 patients with stent grafts, 15 patients underwent the hybrid procedure and 21 underwent emergency surgery. The mean follow-up period was $37.86{\pm}30.73$ months (range, 0-124 months). Five patients (6.9%) died within 30 days. Two patients developed cerebrovascular accidents. Spinal cord injury occurred in 2 patients. Postoperative renal failure, postoperative extracorporeal membrane oxygenation support, and pneumonia were reported in 3, 1, and 6 patients, respectively. Stent-related aortic complications were observed in 5 patients (6.8%). The 1- and 5-year survival and freedom from stent-induced aortic event rates were 81.5% and 58.7%, and 97.0% and 89.1%, respectively. Conclusion: The use of the Seal thoracic stent graft yielded good mid-term results. Further studies are needed to examine the long-term outcomes of this device.