• Title/Summary/Keyword: Hybrid Carrier

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Performance Analysis of Assisted-Galileo Signal Acquisition Under Weak Signal Environment (약 신호 환경에서의 Assisted-Galileo 신호 획득 성능 분석)

  • Lim, Jeong-Min;Park, Ji-Won;Sung, Tae-Kyung
    • Journal of Institute of Control, Robotics and Systems
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    • v.19 no.7
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    • pp.646-652
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    • 2013
  • EU's Galileo project is a market-based GNSS (Global Navigation Satellite System) that is under development. It is expected that Galileo will provide the positioning services based on new technologies in 2020s. Because Galileo E1 signal for OS (Open Service) shares the same center frequency with GPS L1 C/A signal, CBOC (Composite Binary Offset Carrier) modulation scheme is used in the E1 signal to guarantee interoperability between two systems. With E1 signal consisting of a data channel and a pilot channel at the same frequency band, there exist several options in designing signal acquisition for Assisted-Galileo receivers. Furthermore, compared to SNR worksheet of Assisted-GPS, some factors should be examined in Assisted-Galileo due to different correlation profile and code length of E1 signal. This paper presents SNR worksheets of Galileo E1 signals in E1-B and E1-C channel. Three implementation losses that are quite different from GPS are mainly analyzed in establishing SNR worksheets. In the worksheet, hybrid long integration of 1.5s is considered to acquire weak signal less than -150dBm. Simulation results show that the final SNR of E1-B signal with -150dBm is 19.4dB and that of E1-C signal is 25.2dB. Comparison of relative computation shows that E1-B channel is more profitable to acquire the strongest signal in weak signal environment. With information from the first satellite signal acquisition, fast acquisition of the weak signal around -155dBm can be performed with E1-C signal in the subsequent satellites.

CdSe Nanocrystal Quantum Dots Based Hybrid Heterojunction Solar Cell

  • Jeong, So-Myung;Eom, S.;Park, H.;Lee, Soo-Hyoung;Han, Chang-Soo;Jeong, So-Hee
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.02a
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    • pp.93-93
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    • 2010
  • Semiconductor nanocrystal quantum dots (NQDs) have recently attracted considerable interest for use in photovoltaics. Band gaps of NQDs can be tuned over a considerable range by varying the particle size thereby allowing enhance absorption of solar spectrum. NQDs, synthesized using colloidal routes, are solution processable and promise for a large-area fabrication. Recent advancements in multiple-exciton generation in NQD solutions have afforded possible efficiency improvements. Various architectures have attempted to utilize the NQDs in photovoltaics, such as NQD-sensitized solar cell, NQD-bulk-heterojuction solar cell and etc. Here we have fabricated CdSe NQDs with the band gap of 1.8 eV to 2.1 eV on thin-layers of p-type organic crystallites (1.61 eV) to realize a donor-acceptor type heterojuction solar cell. Simple structure as it was, we could control the interface of electrode-p-layer, and n-p-layer and monitor the following efficiency changes. Specifically, surface molecules adsorbed on the NQDs were critical to enhance the carrier transfer among the n-layer where we could verify by measuring the photo-response from the NQD layers only. Further modifying the annealing temperature after the deposition of NQDs on p-layers allowed higher conversion efficiencies in the device.

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Memory Effect of $In_2O_3$ Quantum Dots and Graphene in $SiO_2$ thin Film

  • Lee, Dong Uk;Sim, Seong Min;So, Joon Sub;Kim, Eun Kyu
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.08a
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    • pp.240.2-240.2
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    • 2013
  • The device scale of flash memory was confronted with quantum mechanical limitation. The next generation memory device will be required a break-through for the device scaling problem. Especially, graphene is one of important materials to overcome scaling and operation problem for the memory device, because ofthe high carrier mobility, the mechanicalflexibility, the one atomic layer thick and versatile chemistry. We demonstrate the hybrid memory consisted with the metal-oxide quantum dots and the mono-layered graphene which was transferred to $SiO_2$ (5 nm)/Si substrate. The 5-nm thick secondary $SiO_2$ layer was deposited on the mono-layered graphene by using ultra-high vacuum sputtering system which base pressure is about $1{\times}10^{-10}$ Torr. The $In_2O_3$ quantum dots were distributed on the secondary $SiO_2$2 layer after chemical reaction between deposited In layer and polyamic acid layer through soft baking at $125^{\circ}C$ for 30 min and curing process at $400^{\circ}C$ for 1 hr by using the furnace in $N_2$ ambient. The memory devices with the $In_2O_3$ quantum dots on graphene monolayer between $SiO_2$ thin films have demonstrated and evaluated for the application of next generation nonvolatile memory device. We will discuss the electrical properties to understating memory effect related with quantum mechanical transport between the $In_2O_3$ quantum dots and the Fermi level of graphene layer.

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The identification of novel regions for reproduction trait in Landrace and Large White pigs using a single step genome-wide association study

  • Suwannasing, Rattikan;Duangjinda, Monchai;Boonkum, Wuttigrai;Taharnklaew, Rutjawate;Tuangsithtanon, Komson
    • Asian-Australasian Journal of Animal Sciences
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    • v.31 no.12
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    • pp.1852-1862
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    • 2018
  • Objective: The purpose of this study was to investigate a single step genome-wide association study (ssGWAS) for identifying genomic regions affecting reproductive traits in Landrace and Large White pigs. Methods: The traits included the number of pigs weaned per sow per year (PWSY), the number of litters per sow per year (LSY), pigs weaned per litters (PWL), born alive per litters (BAL), non-productive day (NPD) and wean to conception interval per litters (W2CL). A total of 321 animals (140 Landrace and 181 Large White pigs) were genotyped with the Illumina Porcine SNP 60k BeadChip, containing 61,177 single nucleotide polymorphisms (SNPs), while multiple traits single-step genomic BLUP method was used to calculate variances of 5 SNP windows for 11,048 Landrace and 13,985 Large White data records. Results: The outcome of ssGWAS on the reproductive traits identified twenty-five and twenty-two SNPs associated with reproductive traits in Landrace and Large White, respectively. Three known genes were identified to be candidate genes in Landrace pigs including retinol binding protein 7, and ubiquitination factor E4B genes for PWL, BAL, W2CL, and PWSY and one gene, solute carrier organic anion transporter family member 6A1, for LSY and NPD. Meanwhile, five genes were identified to be candidate genes in Large White, two of which, aldehyde dehydrogenase 1 family member A3 and leucine rich repeat kinase 1, associated with all of six reproduction traits and three genes; retrotransposon Gag like 4, transient receptor potential cation channel subfamily C member 5, and LHFPL tetraspan subfamily member 1 for five traits except W2CL. Conclusion: The genomic regions identified in this study provided a start-up point for marker assisted selection and estimating genomic breeding values for improving reproductive traits in commercial pig populations.

Graphene Quantum Dot Interfacial Layer for Organic/Inorganic Hybrid Photovoltaics Prepared by a Facile Solution Process (용액 공정을 통한 그래핀 양자점 삽입형 유/무기 하이브리드 태양전지 제작)

  • Kim, Youngjun;Park, Byoungnam
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.19 no.6
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    • pp.646-651
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    • 2018
  • This paper reports that the electronic properties at a $P3HT/TiO_2$ interface associated with exciton dissociation and transport can be tailored by the insertion of a graphene quantum dot (GQD) layer. For donor/acceptor interface modification in an $ITO/TiO_2/P3HT/Al$ photovoltaic (PV) device, a continuous GQD film was prepared by a sonication treatment in solution that simplifies the conventional processes, including laser fragmentation and hydrothermal treatment, which limits a variety of component layers and involves low cost processing. The high conductivity and favorable energy alignment for exciton dissociation of the GQD layer increased the fill factor and short circuit current. The origin of the improved parameters is discussed in terms of the broad light absorption and enhanced interfacial carrier transport.

Advanced Hybrid EER Transmitter for WCDMA Application Using Efficiency Optimized Power Amplifier and Modified Bias Modulator (효율이 특화된 전력 증폭기와 개선된 바이어스 모듈레이터로 구성되는 진보된 WCDMA용 하이브리드 포락선 제거 및 복원 전력 송신기)

  • Kim, Il-Du;Woo, Young-Yun;Hong, Sung-Chul;Kim, Jang-Heon;Moon, Jung-Hwan;Jun, Myoung-Su;Kim, Jung-Joon;Kim, Bum-Man
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.18 no.8
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    • pp.880-886
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    • 2007
  • We have proposed a new "hybrid" envelope elimination and restoration(EER) transmitter architecture using an efficiency optimized power amplifier(PA) and modified bias modulator. The efficiency of the PA at the average drain voltage is very important for the overall transmitter efficiency because the PA operates mostly at the average power region of the modulation signal. Accordingly, the efficiency of the PA has been optimized at the region. Besides, the bias modulator has been accompanied with the emitter follower for the minimization of memory effect. A saturation amplifier, class $F^{-1}$ is built using a 5-W PEP LDMOSFET for forward-link single-carrier wideband code-division multiple-access(WCDMA) at 1-GHz. For the interlock experiment, the bias modulator has been built with the efficiency of 64.16% and peak output voltage of 31.8 V. The transmitter with the proposed PA and bias modulator has been achieved an efficiency of 44.19%, an improvement of 8.11%. Besides, the output power is enhanced to 32.33 dBm due to the class F operation and the PAE is 38.28% with ACLRs of -35.9 dBc at 5-MHz offset. These results show that the proposed architecture is a very good candidate for the linear and efficient high power transmitter.

Structural change and electrical conductivity according to Sr content in Cu-doped LSM (La1-xSrxMn0.8Cu0.2O3) (Sr 함량이 Cu-doped LSM(La1-xSrxMn0.8Cu0.2O3)의 구조적변화와 전기전도도에 미치는 영향)

  • Ryu, Ji-Seung;Noh, Tai-Min;Kim, Jin-Seong;Lee, Hee-Soo
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.22 no.2
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    • pp.78-83
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    • 2012
  • The structural change and the electrical conductivity with Sr content in $La_{1-x}Sr_xMn_{0.8}Cu_{0.2}O_3$ (LSMCu) were studied. $La_{0.8}Sr_{0.2}MnO_3$ (LSM) and $La_{1-x}Sr_xMn_{0.8}Cu_{0.2}O_3$ ($0.1{\leq}x{\leq}0.4$) were synthesized by EDTA citric complexing process (ECCP). A decrease in the lattice parameters and lattice volumes was observed with increase of Sr content, and these results were attributed to the increasing $Mn^{4+}$ ions and $Cu^{3+}$ ions in B-site. The electrical conductivity measured from $500^{\circ}C$ to $1000^{\circ}C$ was increased with increase of Sr content in the $0.1{\leq}x{\leq}0.3$ composition range, and it was 172.6 S/cm (at $750^{\circ}C$) and 177.7 S/cm (at $950^{\circ}C$, the maximum value) in x = 0.3. The electrical conductivity was decreased in x = 0.4 because of the presence of the second phase in the grain boundaries. The lattice volume was contracted by increase of $Mn^{4+}$ ions and $Cu^{3+}$ ions in B-site according to increase of Sr content and the electrical conductivity was increased with increase of charge carriers which were involved in the hopping mechanism.