• Applied Chemistry for Engineering
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• v.10 no.2
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• pp.225-230
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• 1999

Low pressure metal organic chemical vapor deposition (LPMOCVD) of $Li_2O$ solid thin films from Li(DPM) in nitrogen-oxygen or argon-oxygen atmosphere was experimentally investigated by using a small hot wall tubular type reactor. XRD and ESCA analysis revealed that $Li_2CO_3$ film grew in nitrogen-oxygen atmosphere and $Li_2O$ grew in argon-oxygen atmosphere. The grown lithium oxide or carbonate reacted with silicon or silica base materials to produce silicates. The CVD model analysis by means of the well-known micro trench method and Monte Carlo simulation was not fully successful, but a set of data on gas phase reaction rate constant and surface reaction constant was obtained.

• Journal of the Korean Ceramic Society
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• v.44 no.3 s.298
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• pp.169-174
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• 2007

TRISO coated fuel particle is one of the most important materials for hydrogen production using HTGR (high temperature gas cooled reactors). It is composed of three isotropic layers: inner pyrolytic carbon (IPyC), silicon carbide (SiC), outer pyrolytic carbon (OPyC) layers. In this study, TRISO coated fuel particle layers were deposited through CVD process in a horizontal hot wall deposition system. Also the computational simulations of input gas velocity, temperature profile and pressure in the reaction chamber were conducted with varying process variable (i.e temperature and input gas ratios). As deposition temperature increased, microstructure, chemical composition and growth behavior changed and deposition rate increased. The simulation showed that the change of reactant states affected growth rate at each position of the susceptor. The experimental results showed a close correlation with the simulation results.

• Journal of the Korean Ceramic Society
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• v.32 no.4
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• pp.419-428
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• 1995

Polycrystalline silicon carbide (SiC) thick films were depostied by low pressure chemical vapor deposition (LPCVD) using CH3SiCl3 (MTS) and H2 gaseous mixture onto isotropic graphite substrate. Effects of deposition variables on the SiC film were investigated. Deposition rate had been found to be surface-reaction controlled below reactor temperature of 120$0^{\circ}C$ and mass-transport controlled over 125$0^{\circ}C$. Apparent activation energy value decreased below 120$0^{\circ}C$ and deposition rate decreased above 125$0^{\circ}C$ by depletion effect of the reactant gas in the direction of flow in a horizontal hot wall reactor. Microstructure of the as-deposited SiC films was strongly influenced by deposition temperature and position. Microstructural change occurred greater in the mass transport controlled region than surface reaction controlled region. The as-deposited SiC layers in this experiment showed stoichiometric composition and there were no polytype except for $\beta$-SiC. The preferred orientation plane of the polycrystalline SiC layers was (220) plane at a high reactant gas concentration in the mass transfer controlled region. As depletion effect of reactant concentration was increased, SiC films preferentially grow as (111) plane.

• Journal of the Korean Ceramic Society
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• v.33 no.7
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• pp.761-770
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• 1996

Silicon carbide (SiC) films were deposited by low pressure chemical vapor deposition (LPCVD) using MTS (CH3SICl3) in a hydrogen atmosphere onto graphite substrates. Depletion effects of reactants which usually occur in the hot wall horizaontal reactor were increased with deposition temperature and pressure. Below 50 torr of total pressure (111) plane was preferenctially grown irrespectrive of deposition temperature and deposition site. Over 50 torr of total pressure however (220) plane was preferentially deposited under 130$0^{\circ}C$ and at inlet site. The surface morphologies of SiC films were uniform at all deposition sites under low pressure but greatly changed with pressure. It shows that a facet structure which was formed above 125$0^{\circ}C$ played an important role in the changed of preferred orientation and surface roughness.

• Composites Research
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• v.31 no.2
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• pp.43-50
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• 2018

The effects of deposition temperature on chemical vapor deposited silicon carbide (CVD-SiC) were studied to obtain high deposition rates and excellent bending strength characteristics. Silicon carbide prepared at $1250{\sim}1400^{\circ}C$ using methyltrichlorosilane(MTS : $CH_3SiCl_3$) by hot-wall CVD showed deposition rates of $95.7{\sim}117.2{\mu}m/hr$. The rate-limiting reaction showed the surface reaction at less than $1300^{\circ}C$, and the mass transfer dominant region at higher temperature. The activation energies calculated by Arrhenius plot were 11.26 kcal/mole and 4.47 kcal/mole, respectively. The surface morphology by the deposition temperature changed from $1250^{\circ}C$ pebble to $1300^{\circ}C$ facet structure and multi-facet structure at above $1350^{\circ}C$. The cross sectional microstructures were columnar at below $1300^{\circ}C$ and isometric at above $1350^{\circ}C$. The crystal phases were all identified as ${\beta}$-SiC, but (220) peak was observed from $1300^{\circ}C$ or higher at $1250^{\circ}C$ (111) and completely changed to (220) at $1400^{\circ}C$. The bending strength showed the maximum value at $1350^{\circ}C$ as densification increased at high temperatures and the microstructure changed from columnar to isometric. On the other hand, at $1400^{\circ}C$, the increasing of grain size and the direction of crystal growth were completely changed from (111) to (220), which is the closest packing face, so the bending strength value seems to have decreased.

• Journal of the Korean Ceramic Society
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• v.50 no.1
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• pp.43-49
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• 2013

${\beta}$-SiC was deposited onto a graphite substrate by a LPCVD method and the effect of the crystallographic orientation on mechanical properties of the deposited SiC was investigated. The deposition was performed at $1300^{\circ}C$ in a cylindrical hot-wall LPCVD system by varying the deposition pressure and total flow rate. The texture and crystallographic orientation of the SiC were evaluated by XRD. The deposition rate increased linearly with the gas flow rate from 800 sccm to 1600 sccm. It also increased with the pressure but became saturated above a total pressure of 3.3 kPa. In the range of 3.3 - 10 kPa, the preferred orientation changed from the (220) and (311) planes to the (111) plane. The hardness and elastic modulus showed maximum values when the SiC had the (111) preferred orientation, though it gradually decreased upon a change to the (220) and (311) preferred orientations.