• 대한전자공학회:학술대회논문집
• /
• 대한전자공학회 2003년도 하계종합학술대회 논문집 II
• /
• pp.1101-1104
• /
• 2003

In this paper, we analyzed the gate current and substrate current by the hot carrier effects and restoration phenomenon of characteristics by time in the p-channel MOSFETs. The Stress voltage condition is a voltage in maximum gate current and time is 3s, 10s, 30s, l00s, 1000s, 2000s and 3000s. As results of analysis, the gate current and substrate current were decreased by stress time, and the restoration time of characteristics were shown the results that were decreased by the exponential times.

• International Journal of Naval Architecture and Ocean Engineering
• /
• 제7권1호
• /
• pp.10-24
• /
• 2015

This study introduces a fatigue assessment procedure using mesh-insensitive structural stress method based on the Common Structural Rules for Bulk Carriers by considering important factors, such as mean stress and thickness effects. The fatigue assessment result of mesh-insensitive structural stress method have been compared with CSR procedure based on equivalent notch stress at major hot spot points in the area near the ballast hold for a 180 K bulk carrier. The possibility of implementing mesh-insensitive structural stress method in the fatigue assessment procedure for ship structures is discussed.

• 대한전자공학회:학술대회논문집
• /
• 대한전자공학회 2002년도 ITC-CSCC -2
• /
• pp.1050-1053
• /
• 2002

In this paper, Amorphous silicon on glass substrate was recrystallized to poly-crystalline silicon by solid phase crystallization (SPC) technology. The active region of thin film transistor (TFT) was fabricated by amorphous silicon. The output and transfer characteristics of thin film transistor with lightly doped drain (LDD) structure was measured and analyzed. As a results, analyzed TFTs reliability with LDD's length by various kinds argument such as sub-threshold swing coefficient, mobility and threshold voltages were evaluated. Stress effects in TFT were able to improve to the characteristics of turn-on current and hot carrier effects by LDD's length variations.

• 대한전자공학회:학술대회논문집
• /
• 대한전자공학회 2002년도 하계종합학술대회 논문집(2)
• /
• pp.185-188
• /
• 2002

In this paper, Amorphous silicon on glass substrate was recrytallized to poly-crystalline silicon by solid phase crystallization(SPC) technology The active region of thin film transistor(TFT) was fabricated by amorphous silicon. The output and transfer characteristics of thin film transistor with lightly doped drain(LDD) structure was measured and analyzed. As a results, analyzed TFT's reliability with LDD's length by various kinds argument such as sub-threshold swing coefficient, mobility and threshold voltages were evaluated. Stress effects in TFT were able to improve to the characteristics of turn-on current and hot carrier effects by LDD's length variations

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2000년도 하계학술대회 논문집
• /
• pp.324-327
• /
• 2000

In this paper, the effects of negative and positive bias stress on p-channel poly-Si TFT's fabricated by excimer laser annealing have been investigated After positive and negative bias stress, transcon-ductance(g$_{m}$) is increased because of a reduction of the effective channel length due to the injected electron in the gate oxide. In the positive bias stress, the injection of hole is appeared after stress time of 3600sec and g$_{m}$ is decreased. On the other hand, the gate voltage at the maximum g$_{m}$, S-swing and threshold voltage(V$_{th}$) are decreased because of the interface state generation due to the injection of electrons into the gate oxide.e.ide.e.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 1999년도 추계학술대회 논문집
• /
• pp.457-460
• /
• 1999

The effects of electrical positive stress on n-channel LDD and offset structured poly-Si TFT\`s have been systematically investigated in order to analyze the transfer curve\`s shift mechanism. It has been found that the LDD and offset regions behave as a series resistance that reduce the electric field near drain. Hot carrier effects are reduced because of these results. After electrical stress transfer curve’s shift and variation of the off-current are dependent upon the offset length rather than offset region’s doping concentration. Variation of the subthreshold slope is dependent upon offset region’s doping concentration as well as offset length.

• Journal of Applied Biological Chemistry
• /
• 제50권2호
• /
• pp.78-84
• /
• 2007

The anti-fibrotic effects of hot water extract of adventitious root culture of Panax ginseng (ARCP) and the possible mechanisms were investigated on $CCl_4-induced$ hepatotoxicity model mice. Fibrosis was induced by a mild treatment of $CCl_4$. Then silymarin as a positive control drug and ARCP or carrier alone as a negative control were treated. Serum GPT, GOT and ALP activity levels were lowered by 25, 21 and 11% for silymarin treated group and by 48, 39 and 14% for ARCP treated group compared to carrier treated alone. Hepatic collagen for ARCP treatment group was reduced by 18% and MDA contents decreased a little more. Pro-fibrotic gene ($TGF-{\beta}1$, TIMP-1 and ${\alpha}-SMA$) expression increased following the $CCl_4$ treatment, but both the silymarin and the ARCP treatments decreased the expressions of these genes by 20% to 50%. The antioxidant effect of ARCP was studied by DPPH free radical scavenging activity. In addition, a generation of reactive oxygen species (ROS) was also reduced in $H_2O_2-treated$ HepG2 cells upon the ARCP treatment. In summary, ARCP has antioxidant property, and can have some protection against oxidative stress; more importantly, ARCP can efficiently protect mice against $CCl_4-induced$ fibrosis.

• 대한기계학회논문집B
• /
• 제21권12호
• /
• pp.1576-1585
• /
• 1997

The microexplosive combustion of a slurry droplet was investigated experimentally. The microexplosion has been approximately considered to be caused by pressure build-up in the shell and to be promoted by heterogeneous nucleation of liquid carrier, which is due to the suppression of evaporation and subsequent superheating of liquid carrier. To closely investigate the pressure build-up and the heterogeneous nucleation, the experiments were conducted in an electric combustor, of which temperature was controllable (400 K-900 K). And the effects of two aligned droplets on the interactive combustion and microexplosion were found in a hot post region of a flat flame burner. Transient internal temperature distributions for slurry droplets were measured. And the shell formation and the microexplosion of suspended A1/JP-8 and Al/n-heptane slurry droplets were examined with various surfactant concentrations (0.5-5 wt%) and solid loadings (10-50 wt.%). The microexplosion time of binary array of droplets was found to be less than that of the isolated droplet due to radiative interaction between droplets.

• 한국전기전자재료학회논문지
• /
• 제31권2호
• /
• pp.74-79
• /
• 2018

In this report, the results of a systematic study on the effects of polycrystalline silicon gate depletion on the reliability characteristics of metal-oxide semiconductor field-effect transistor (MOSFET) devices were discussed. The devices were fabricated using standard complimentary metal-oxide semiconductor (CMOS) processes, wherein phosphorus ion implantation with implant doses varying from $10^{13}$ to $5{\times}10^{15}cm^{-2}$ was performed to dope the polycrystalline silicon gate layer. For implant doses of $10^{14}/cm^2$ or less, the threshold voltage was increased with the formation of a depletion layer in the polycrystalline silicon gate layer. The gate-depletion effect was more pronounced for shorter channel lengths, like the narrow-width effect, which indicated that the gate-depletion effect could be used to solve the short-channel effect. In addition, the hot-carrier effects were significantly reduced for implant doses of $10^{14}/cm^2$ or less, which was attributed to the decreased gate current under the gate-depletion effects.

• JSTS:Journal of Semiconductor Technology and Science
• /
• 제15권6호
• /
• pp.585-593
• /
• 2015

In the nanoscale regime, many multigate devices are explored to reduce their size further and to enhance their performance. In this paper, design of a novel device called, Triple Material Surrounding Gate Tunnel Field effect transistor (TMSGTFET) has been developed and proposed. The advantages of surrounding gate and tunnel FET are combined to form a new structure. The gate material surrounding the device is replaced by three gate materials of different work functions in order to curb the short channel effects. A 2-D analytical modeling of the surface potential, lateral electric field, vertical electric field and drain current of the device is done, and the results are discussed. A step up potential profile is obtained which screens the drain potential, thus reducing the drain control over the channel. This results in appreciable diminishing of short channel effects and hot carrier effects. The proposed model also shows improved ON current. The excellent device characteristics predicted by the model are validated using TCAD simulation, thus ensuring the accuracy of our model.