• Nuclear Engineering and Technology
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• v.21 no.4
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• pp.259-266
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• 1989

An improved version of RELAP5/MOD2 Cycle 36.04 code is assessed for LOFI LBLOCA Test L2-5. Minor modifications to the original version have been done to avoic reflood related errors. Based on the modified version, one base case and two cases for sensitivity study on downcomer and core channel modelling are calculated. The calculation results are compared with the experimental data for primary system pressure, break mass How rate and cladding temperature at hot spot According to the comparison, it is found that the hydraulic system behaviors are well predicted, excessive core cooling exist in blowdown phase for a single core channel and a combined downcomer case, and a better result can be obtained for a two core channel case.

• The Journal of Korean Medicine Ophthalmology and Otolaryngology and Dermatology
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• v.10 no.1
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• pp.209-246
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• 1997

In the literatual study on the Ecthyma, the results were as follows. 1. The pathogenic factors of Ecthyma is divided three parts. One is exogenous pathogenic factors which including the wind evil, wind heat and toxic material produced by wetness evil. Another is endogenous pathogenic factors which including the declination of kidney-yang, impairment of the liver and kidney, the lower classes of yin-fire, accumulation of wetness-heat in the spleen asthenia, impairment of the liver and kidney, wetness-heat of three yang, asthenic heat-syndrome of three yin. The other is pathogenic factors neither endogenous nor exogenous which including the food and living, uncontrol sexual excess, anxiety and angry, injury of skin, injury of insects and animals. 2. Five viscera which was concerned with Ecthyma are liver, spleen and kidney. 3. Frequent region of Ecthyma are S-36(足三里) and C-7(陰交). External Ecthyma was rose to wetness-heat of three yang channel that cured easily. Internal Ecthyma was rose to asthenic heat-syndrome of three yin channel that cured hardly. 4. In the frequency of prescription, the most numerous prescription is Bojungikgitang(補中益氣湯) and the next are Kyukgigo(隔紙膏) and Yukmijihwanghwan(六味地滉丸). 5. In the frequency of medicine, the most medicine is Calomelas(輕粉) which included Hydrargyrum(水銀) and the next are Olibanum(乳香) and Resina Commiphorae Myrrhae(沒藥) which regulating vital energy and pain control medicine used that in order to destroy insects and remove polson. 6. In classification of the medical action, medicine of clearing away summer-heat and heat evil and activating blood circulation to dissipate blood stasis used to be very busy which in order to remove the disorder of vital energy for virulent heat-evil. 7. In classification of four characters, the most part is warm medicine, the next are cold and cool medicine and there is a few that is hot medicine. 8. In classification of five tastes, the most numerous tastes are bitter and acrid, the next are sweet, salty and sour tastes. 9. In classification of virulence of medicine, the most part is non-toxic, the next are weakly and deadly poison. 10. In classification of channel distribution, the most is the medicine that belongs to liver channel, the next are the lung, spleen, stomach and kidney channel.

• Nuclear Engineering and Technology
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• v.52 no.9
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• pp.1990-1997
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• 2020

To support the safe operation of the Miniature Neutron Source Reactor (MNSR), a thermo-hydraulic transient model using the RELAP5/Mod3.2 code was simulated. The model was verified by comparing the results with the measured and the previously calculated data. The comparisons consisted of comparing the MNSR parameters under normal constant power operation and reactivity insertion transients. Reactivity Insertion Accident (RIA) for three different initial reactivity values of 3.6, 6.0, and 6.53 mk have been simulated. The calculated peaks of the reactor power, fuel, clad and coolant temperatures in hot channel were calculated in this model. The reactor power peaks were: 103 kW at 240 s, 174 kW at 160 s and 195 kW at 140 s, respectively. The fuel temperature reached its maximum value of 116 ℃ at 240 s, 124 ℃ at 160 s and 126 ℃ at 140 s respectively. These calculation results ensured the high inherently safety features of the MNSR under all phases of the RIAs.

• Asian Pacific Journal of Cancer Prevention
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• v.16 no.5
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• pp.1677-1682
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• 2015

Cancer progression is attained by uncontrolled cell division and metastasis. Increase in tumor size triggers different vascular channel formation to address cell nutritional demands. These channels are responsible for transferring of nutrients and gaseous to the cancer cells. Cancer vascularization is regulated by numerous factors including vascular endothelial growth factors (VEGFs). These factors play an important role during embryonic development. Members included in this group are VEGFA, VEGFB, VEGFC, PIGF and VEGFD which markedly influence cellular growth and apoptosis. Being freely diffusible these proteins act in both autocrine and paracrine fashions. In this review, genetic characterization these molecules and their putative role in cancer staging has been elaborated. Prognostic significance of these molecules along with different stages of cancer has also been summarized. Brief outline of ongoing efforts to target hot spot target sites against these VEGFs and their cognate limitations for therapeutic implications are also highlighted.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.1019-1022
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• 2004

High performance p-ch poly-Si TFTs with excellent stability were developed. By using a frequency doubled DPSS CW laser, the a-Si on glass could be crystallized into one dimensional single crystalline silicon named as a sequential lateral crystallization (SLC) region. We fabricated p-ch TFTs on SLC region and the typical characteristic values of the TFTs were $u_{fe}$ = 180 $cm^2$/Vs, $V_{th}$ = -3 V, S.S. = 0.5 V/dec, and $I_{off}$ = 1 pA/um@ $V_d$ = -10V. It is found that the TFTs are very stable after bias stresses such as negative and positive gate biases, hot carrier bias and high current bias. These results indicate that the poly-Si in SLC region is suitable for system on glass (SOG) application.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.1258-1261
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• 2004

Degradation phenomenon in the low-temperature polysilicon (LTPS) thin-film transistors (TFTs) with different junction structures was investigated. A gate-overlapped lightly doped drain (GOLDD) structure showed better hot-carrier stress (HCS) stability than a conventional LDD one. On the other hand, high drain current stress (HDCS) at $V_{gs}$ = $V_{ds}$ conditions caused much severe device degradation in the GOLDD structure because of its higher current level resulting in the higher applied power. It is suggested that self-heating-induced mobility degradation in the GOLDD TFFs be suppressed for using this structure in short-channel devices.

• Journal of Communications and Networks
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• v.18 no.5
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• pp.773-783
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• 2016

Both coordinated multi-point transmission and frequency reuse are effective approaches to mitigate inter-cell interference and improve network coverage. The motivation of this work is to explore the manner to effectively utilize the spectrum resource by reasonably combining cooperation and frequency reuse. The $Mat{\acute{e}}rn$ cluster process, which is appropriate to model networks with hot spots, is used to model the spatial distribution of base stations. Two cooperative mechanisms, coherent and non-coherent joint transmission (JT), are analyzed and compared. We also evaluate the effect of multiple antennas and imperfect channel state information. The simulation reveals that the proposed approach to combine cooperation and frequency reuse is effective to improve the network coverage for users located at both the center and the boundary of the cooperative region.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.1
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• pp.54-60
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• 1994

In this paper, we present the analytical models for the change of the lateral electric field distribution and the velocity saturation region length with the electron trapping of stressed SC-PMOSFET in the saturation region. To derive the hot-electron-induced lateral electric field of stressed SC-PMOSFET. Ko's pseudo two dimensional box model in the saturation region which illustrates the analysis of the velocity saturation region is modified under the condition of electron trapping in the oxide near the drain region. From the results, we have the following lateral electric field in the y-direction, that is, E(y) ES1satT.cosh(y/l) qNS1tT.sinh(y/l)/lCox. It is shown that the trapped electrons influence the field in the drain region. decreasing the lateral electric field. Calculated velocity saturaion length increases with the trapped electrons. increasing the drain current of stressed SCPMOSFET. This results well explain the HEIP phenomenon of PMOSFET's.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.26-31
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• 2002

To realize a high integrated Flash memory utilizing SONOS memory devices, the NOR type 1TC(one Transistor Cell) SONOS Flash arrays are fabricated and characterized. This SONOS Flash arrays with common source lines are designed and fabricated by conventional 0.35$\mu\textrm{m}$ CMOS process. The thickness of ONO for memory cell is tunnel oxide of 34${\AA}$, nitride of 73${\AA}$ and blocking oxide of 34${\AA}$. To investigate operating characteristics, CHEI(Channel Hot Electron Injection) method and Bit line erase method are selected as the write operation and the erase method, respectively. The disturbance characteristics according to the write/erase/read cycling are also examined. The degradation characteristics are investigated and then the reliability of SONOS flash memory is guaranteed.

• Proceedings of the IEEK Conference
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• 2003.07b
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• pp.719-722
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• 2003

This work investigates the device degradation p-channel PD SOI devices at various applied voltages as well as stress temperatures with respect to Body-Contact SOI (BC-SOI) and Floating-Body SOI (FB-SOI) MOSFETs. It is observed that the drain current degradation at the gate voltage of the maximum gate current is more significant in FB-SOI devices than in BC-SOI devices. For a stress at the gate voltage of the maximum gate current and elevated temperature, it is worth noting that the $V_{PT}$ Will be decreased by the amount of the HEIP plus the temperature effects. For a stress at $V_{GS}$ = $V_{DS}$ . the drain current decreases moderately with stress time at room temperature but it decreases significantly at the elevated temperature due to the negative bias temperature instability.