• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.1511-1514
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• 2009

Organic light emitting layer in OLED device was formed by gravure printing process in this work. Organic surface coated by gravure printing typically showed relatively bad uniformity. Thickness and roughness control was characterized by applying various mixed solvents in this work. Poly (N-vinyl carbazole) (PVK) and fact-tris(2-phenylpyridine)iridium($Ir(ppy)_3$) are host dopant system materials. PVK was used as a host and Ir(ppy)3 as green-emitting dopant. To luminance efficiency of the plasma treatment on etched ITO glass and then PEDOT:PSS spin coated. The device layer structure of OLED devices is as follow Glass/ITO/PEDOT:PSS/PVK+Ir(ppy)3-Active layer /LiF/Al. It was printed by gravure printing technology for polymer light emitting diode (PLED). To control the thickness multi-printing technique was applied. As the number of the printing was increased the thickness enhancement was increased. To control the roughness of organic layer film, thermal annealing process was applied. The annealing temperature was varied from room temperature, $40^{\circ}C$, $80^{\circ}C$, to $120^{\circ}C$.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.149-149
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• 2015

본 연구에서는 Host 물질 Alq3와 Dopant 물질 Ir(piq)3, Zn(BTZ)2를 사용한 ITO/NPB/Alq3+ metal complexes/Alq3/LiF/Al 다층 구조의 PHOLED 소자를 제작하고 특성 변화를 파악하였다. Dopant Ir(piq)3를 발광 영역에 도핑하였을 경우에는 소자의 발광 효율이 감소하였다. 이는 Co-deposition 조건에 따른 분자간의 거리가 충분히 가까워지지 않았기 때문이다. 분자간의 거리가 Co-deposition 조건보다 멀게 되면 Host - Dopant 간의 에너지 전달이 제대로 일어날 수 없게 되며, 결과적으로 Host 영역과 Dopant영역에서 각각 발광을 하게 된다. Dopant Zn(BTZ)2를 도핑하였을 경우에는 Host - Dopant 간의 에너지 전달에 의한 효과로 인해, J-V 특성은 50% 이상, L-V 특성은 20% 이상, L-J 특성은 10% 이상 효율이 증가하였다.

• Bulletin of the Korean Chemical Society
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• 제35권9호
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• pp.2774-2780
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• 2014

A dynamics study of relaxation and fragmentation of icosahedral argon cluster with a vibrationally excited $Ar_2^+$ (${\nu}$) is presented. Local translation is shown to be responsible for inducing energy flow from the embedded ion to host atoms and fragmentation of the cluster consisting of various low frequency modes. The total potential energy of $(Ar_2^+)Ar_{12}$ is formulated using a building-up procedure of host-guest and host-host interactions. The time dependence of ion-to-host energy transfer is found to be tri-exponential, with the short-time process of ~100 ps contributing most to the overall relaxation process. Relaxation timescales are weakly dependent on both temperature (50-300 K) and initial vibrational excitation (${\nu}$ = 1-4). Nearly 27% of host atoms in the cluster with $Ar_2^+$ (${\nu}$ = 1) fragment immediately after energy flow, the extent increasing to ~43% for ${\nu}$ = 4. The distribution of fragmentation products of $(Ar_2^+)Ar_{12}{\rightarrow}(Ar_2^+)Ar_n+(12-n)Ar$ are peaked around $(Ar_2^+)Ar_8$. The distribution of dissociation times reveals fragmentation from one hemisphere dominates that from the other. This effect is attributed to the initial fragmentation causing a sequential perturbation of adjacent atoms on the same icosahedral five-atom layer.

• 한국토양환경학회지
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• 제2권1호
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• pp.35-44
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• 1997

토양층과 모암층에서의 산성우에 대한 중화능력을 평가하기 위하여 인공강우를 이용한 컬럼실험을 실시하였으며 토양을 이루고 있는 모암 특성의 차이에 의한 산성강하물의 완충효과를 비교하기 위하여 연구지역내의 모암의 조성광물에 차이가 있는 두 개의 골짜기를 선정하고 골짜기에 흐르는 지표수의 pH를 1996년 5월부터 1996년 10월까지 측정하였다. 컬럼실험에서 사용한 인공강우는 증류수에 황산과 질산을 적절히 첨가하여 pH를 각각 3, 4, 및 5로 조절하였으며 컬럼유출수의 주요 양이온과 음이온을 측정하였다. A층위와 B층위의 양이온 교환용량(CEC)은 각각 9.68 meq/100g과 6.16 meq/100g 이었으며 인공강우의 살포시 컬럼유출수의 pH는 중간층토양에서보다 양이온 교환용량이 큰 표층토양에서 더 크게 나타났다. 컬럼유출수에서의 $Ca^{2+}$, $Mg^{2+}$, $Na^{+}$의 합이 점차로 감소하여 지속적인 산성우는 토양의 양이온 교환용량을 감소시키는 것으로 나타났다. 현장조사결과에 따르면 골짜기의 하류로 내려옴에 따라 지표수의 pH는 계속 증가하여 하류로 흐르는 과정에서의 완충효과를 나타내었다. 이러한 완충효과는 모암의 조성광물중 kaolinite와 illite 이외에도 smectite를 함유하고 있는 골짜기에서 더 크게 나타나는 것이 특징적이었다. 이 결과는 토양충 뿐만 아니라 모암이 산성우의 완충용량을 가지고 있음을 나타내었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.427-428
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• 2008

New high efficiency green light emitting phosphorescent devices with emission layers of [TCTA/TCTA:TAZ/TAZ]:Ir$(ppy)_3$ have been fabricated and evaluated in this paper. Among the devices having different thicknesses of TCTA:TAZ mixed layer in the total 300$\AA$-thick host of TCTA(80$\AA$)/TCTA:TAZ (50~100$\AA$)/TAZ, the device with host of TCTA(80$\AA$)/TCTA:TAZ(90$\AA$)/TAZ(130$\AA$) showed the best electroluminescent characteristics with the current density of 95 mA/$cm^2$ and luminance of 25,000 cd/$m^2$ at an applied voltage of 10V. The maximum current efficiency was 52 cd/A under the luminance of 400 cd/$m^2$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.156-156
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• 2010

We have developed highly efficient blue phosphorescent organic light-emitting devices (OLED) with simplified architectures using blue phosphorescent material. The basis device structure of the blue PHOLED was anode / emitting layer (EML) / electron transport layer (ETL) / cathode. The dopant was partially doped into the host layer for investigating recombination zone, current efficiency, and emission characteristics of the blue PHOLEDs.

• 한국전기전자재료학회논문지
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• 제26권6호
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• pp.451-456
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• 2013

To study emission properties of white phosphorescent organic light emitting devices (PHOLEDs), we fabricated white PHOLEDs of ITO(150 nm) / NPB(30 nm) / TcTa(10 nm) / mCP(7.5 nm) / light-emitting layer(25 nm) / UGH3(5 nm) / Bphen(50 nm) / LiF(0.5 nm) / Al(200 nm) structure. The total thickness of light-emitting layer with co-doping and blue-doping/co-doping using a host-dopant system was 25 nm and the dopant of blue and red was FIrpic and $Bt_2Ir$(acac) in UGH3 as host, respectively. The OLED characteristics were changed with position and thickness of blue doping layer and co-doping layer as light-emitting layer and the best performance seemed in structure of blue-doping(5 nm)/co-doping(20 nm) layer. The white PHOLEDs showed the maximum current density of $34.5mA/cm^2$, maximum brightness of $5,731cd/m^2$, maximum current efficiency of 34.8 cd/A, maximum power efficiency of 21.6 lm/W, maximum quantum efficiency of 15.6%, and a Commission International de L'Eclairage (CIE) coordinate of (0.367, 0.436) at $1,000cd/m^2$.

• 정보보호학회지
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• 제9권4호
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• pp.11-18
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• 1999

VPN 또는 침입차단시스템 간 비밀 통신의 기본구조로 사용되는 IP 네트워크 보안 (IPnetwork-layer security)프로토콜인 swIPe 프로토콜에 대하여 설명한다. 우선 swIPe 프 로토콜에 대하여 분석하고 침입차단시스템에서 이를 실제로 적용하는 방법에 대하여 서술한 다. swIPe 프로토콜에서는 swIPe 개요, 개념적 구조 swIPe를 이용한 통신 절차, 패킷의 포 맷 encryption과 decryption 프로세스등을 서술하며 실제 적용에서는 Host-to -Host 터널링 침입차단시스템간 비닐통신 절차 swIPe driver에 대하여 설명한다.

• ALGAE
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• 제20권4호
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• pp.363-368
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• 2005

The brown alga Ascophyllum nodosum and its mutualistic, ascomycete symbiont, Mycophycias ascophylli, form a complex ‘rganism’or symbiotum. Here we show the interaction of the symbiotum to the abundant brown algal epiphyte, Elachista fucicola. Microscopy of field-collected plants shows morphological responses of A. nodosum to the common epiphyte E. fucicola. When E. fucicola attaches to A. nodosum a bundle of several to dozens of rhizoids penetrates into the host. On the surface of the host, the cells proliferate to form a donut-shaped ring, 100-200 μm in height that surrounds the thallus of E. fucicola. A pit forms in advance of the rhizoids and the cells of A. nodosum break down. This leaves the network of fungal hyphae partially intact and intermingling with the epiphyte rhizoids and its lowermost cells. After the pit is formed, the cells of A. nodosum bordering the infection chamber redifferentiate an epidermal layer. Neither the host nor its mutualistic fungus, M. ascophylli appears to recognize E. fucicola as an invader and to prevent the attachment and growth of this epiphyte. Based on the physical damage to the host caused by invading rhizoids, we conclude that the relationship of E. fucicola to A. nodosum is that of a parasite and its host.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.767-770
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• 2009

We synthesized a spirobenzofluorene type phosphine oxide (SPPO2) as a new triplet host and an universal electron transport material for phosphorescent organic light-emitting diodes(PHOLEDs). Red PHOLEDs with the SPPO2 host material showed a high quantum efficiency of 14.3 % with a current efficiency of 20.4 cd/A. In addition, the SPPO2 could be applied as an electron transport material which can be matched with any host material due to the lowest unoccupied molecular orbital of 2.4 eV. Electron injection from a cathode to the SPPO2 electron transport layer was better than common electron transport materials. In particular, the SPPO2 was effective as the electron transport material in blue PHOLEDs and the quantum efficiency was more than doubled and driving voltage was lowered by more than 3 V using the SPPO2 instead of common electron transport material.