• Proceedings of the Korean Vacuum Society Conference
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• 1998.02a
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• pp.135-136
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• 1998

By the ion bombardment the original discrete layered structure is damaged and a uniformly mixed layer is formed by the intermixing of the films. Immediately after this dynamic cascade mixing a structure of this mixed layer is likely to be a mixture of randomly distributed atoms. Subsequently the mixed layered structure becomes a non-equilibrium structure such as the metastable pphase because the kinetic energies of the incident ions rappidly dissippate and host atoms within the collision cascade region are quenched from a highly energetic state. The formation of the metastable transition metal alloys using ion-beam-mixing has been extensively studied for many years because of their sppecific ppropperties that differ from those of bulk materials. in ion-beam-mixing the alloy or comppound is formed due to the atomic interaction between different sppecies during ion bombardment. in this study the metastable pphase formed by ion-beam-mixing pprocess is comppared with equilibrium one by arc-melting method by GXRD and XAS. Therfore we studied the fundamental characteristics of charge redistribution uppon alloying and formation of intermetallic comppounds. The multi-layer films were depposited on a wet-oxidized Si(100) substrate by sequential electron beam evapporation at a ppressure of less than 5$\times$10-7 Torr during depposition. These compprise 4 ppairs of Co and ppt layers where thicknesses of each layer were varied in order to change the alloy compposition.

• Journal of KIISE:Computing Practices and Letters
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• v.15 no.2
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• pp.77-88
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• 2009

According to the size of NAND flash memory as the storage system of mobile device becomes large, the performance of address translation and life cycle management in FTL (Flash Translation Layer) to interact with file system becomes very important. In this paper, we propose the continuity counters, which represent the number of continuous physical blocks whose logical addresses are consecutive, to reduce the number of address translation. Furthermore we propose the prefetching method which preloads frequently accessed pages into main memory to enhance I/O performance of flash memory. Besides, we use the 2-bit write prediction and asynchronous writing method to predict addresses repeatedly referenced from host and prevent from writing overhead. The experiments show that the proposed method improves the I/O performance and extends the life cycle of flash memory. As a result, proposed CFTL (Clustered Flash Translation Layer)'s performance of address translation is faster 20% than conventional FTLs. Furthermore, CFTL is reduced about 50% writing time than that of conventional FTLs.

• Journal of KIISE:Information Networking
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• v.34 no.6
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• pp.435-445
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• 2007

Snoop protocol is one of the efficient schemes to compensate TCP packet loss and enhance TCP throughput in wired-cum-wireless networks. However, Snoop protocol has a problem: it cannot perform local retransmission efficiently under the bursty-error prone wireless link. To solve this problem, SACK-Aware-Snoop and SNACK mechanism have been proposed. These approaches improve the performance by using SACK option field between base station and mobile host. However in the wireless channel with high packet loss rate, SACK-Aware-Snoop and SNACK mechanism do not work well because of two reason: (a) end-to-end performance is degraded because duplicate ACKs themself can be lost in the presence of bursty error, (b) energy of mobile device and bandwidth utilization in the wireless link are wasted unnecessarily because of SACK option field in the wireless link. In this paper, we propose a new local retransmission scheme based on Cross-layer approach, called Cross-layer Snoop(C-Snoop) protocol, to solve the limitation of previous localized link layer schemes. C-Snoop protocol includes caching lost TCP data and performing local retransmission based on a few policies dealing with MAC-layer's timeout and local retransmission timeout. From the simulation result, we could see more improved TCP throughput and energy efficiency than previous mechanisms.

• Journal of Nuclear Fuel Cycle and Waste Technology(JNFCWT)
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• v.17 no.1
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• pp.75-94
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• 2019

As the present single-layer repository concept requires too large an area for the site of the repository, a multi-layer repository concept has been suggested to improve the disposal density. The effects of the excavation damaged zone around the multi-layer repository constructed in the deep host rock on the temperature distribution in the repository were analyzed. For the thermal analysis of the multi-layer repository, the hydrothermal model was used to consider the resaturation process occurring in the buffer, backfill and rock. The existence of an excavation damaged zone has a significant effect on the temperature distribution in the repository, and the maximum peak temperatures of double-layer and triple-layer repositories can rise to $7^{\circ}C$ and $12^{\circ}C$, respectively depending on the size of the excavation damaged zone and the degree of decrease of the thermal conductivity. The dominant factor affecting the peak temperature in the multi-layer repository is the decrease of thermal conductivity in the excavation damaged zone, and the excavation damaged zone formed around the deposition hole has more significant effects on the peak temperature than does the excavation damaged zone formed around the disposal tunnel.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.1
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• pp.53-56
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• 2007

We have fabricated organic white light emitting diodes by mixing two colors from very thin rubrene doped and non-doped DPVBi layers. The device structure was ITO/2-TNATA(15 nm)/${\alpha}$-NPD(35 nm)/DPVBi:rubrene(5 nm)/DPVBi(30 nm)/$Alq_{3}(5\;nm)$/BCP(5 nm)/LiF(0.5 nm)/Al(150 nm). The yellow-emitting rubrene of 0.7 wt % was doped into the blue-emitting DPVBi host for the white light. CIE coordinate of the device was (0.31, 0.33) at 8 V. The color coordinates were stable at wide ranges of driving voltages. The luminance was over $1,000\;cd/m^{2}$ at 8 V and increases to $14,500\;cd/m^{2}$ at 12 V. The maximum current efficiency of the device was 8.2 cd/A at $200\;cd/m^{2}$.

• ETRI Journal
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• v.30 no.6
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• pp.790-798
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• 2008

Recently, NAND flash memory has emerged as a next generation storage device because it has several advantages, such as low power consumption, shock resistance, and so on. However, it is necessary to use a flash translation layer (FTL) to intermediate between NAND flash memory and conventional file systems because of the unique hardware characteristics of flash memory. This paper proposes a new clustered FTL (CFTL) that uses clustered hash tables and a two-level software cache technique. The CFTL can anticipate consecutive addresses from the host because the clustered hash table uses the locality of reference in a large address space. It also adaptively switches logical addresses to physical addresses in the flash memory by using block mapping, page mapping, and a two-level software cache technique. Furthermore, anticipatory I/O management using continuity counters and a prefetch scheme enables fast address translation. Experimental results show that the proposed address translation mechanism for CFTL provides better performance in address translation and memory space usage than the well-known NAND FTL (NFTL) and adaptive FTL (AFTL).

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1437-1439
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• 2007

We fabricated white organic light emitting device (WOLED) with the layered fluorescent blue material and phosphorescent green/red dye-doped materials. Addition of the non-doped phosphorescent host material between the fluorescent and phosphorescent light emitting layers provided the result of broadband white spectrum, with improved balance, higher efficiency, and lower power consumption. In our devices, there was no need of exciton-blocking layer between the each emission layer for the further confinement of the diffusion of excitons.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.1
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• pp.83-88
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• 2004

BAlq was fabricated as for hole blocking layer in the OLED devices to investigate its electrical and optical characteristics. Device structure was ITO/$\alpha$ -NPD/EML/BAlq/Alq3/Al:Li using TYG-201, DPVBi (4, 4 - Bis (2, 2 - diphenylethen-1 - yls) - Biphenyl), Alq and DCJTB (4-(dicyanomethylene)-2- (1-propyls)6-methy 4H-pyrans) as green emitting material, blue emitting material, host material for red emission and red emitting guest material respectively. The OLED device showed optimum working voltage and electron density at 600 cd/$m^2$ when thickness of BAlq is 25$\AA$ for RGB OLED devices while their efficiencies are better at 50$\AA$ of BAlq. Red and blue color OLEDs also fabricated using 30$\AA$ thickness of BAlq and compared with those without BAlq layer. BAlq was more effective in electrical properties such as working voltage, current density and efficiency of red OLED than blue and green ones. This study describes that 30$\AA$ is optimum thickness of BAlq for best performance of full color OLED devices when using BAlq as a hole blocking material.

• Journal of the Microelectronics and Packaging Society
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• v.18 no.4
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• pp.79-83
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• 2011

White phosphorescence polymer light emitting diodes (WPhPLEDs) with a glass/ITO/PEDOT:PSS/PFO:$Ir(ppy)_3$:MDMO-PPV/TPBI/LiF/Al structure were fabricated to investigate the effects of $Ir(ppy)_3$ doping concentrations on the optical and electrical properties of the devices. PFO, $Ir(ppy)_3$ and MDMO-PPV conjugated polymers as host and guest materials in the emission layer were spin coated at various concentrations of $Ir(ppy)_3$ ranging from 0.0 to 20.0 vol.%. As the concentration of $Ir(ppy)_3$ increased from 5.0 to 20.0 vol.%, the luminance and current efficiency values of the devices decreased clearly, which are attributable to the quenching effect at a high doping concentration. The maximum luminance and current density were 2850 $cd/m^2$ and 741 $mA/cm^2$, respectively for a WPhPLED with an $Ir(ppy)_3$ concentration of 5.0 vol.%. The CIE color coordinates were about x=0.33 and y=0.34 at 11V, showing a good white color.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.6
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• pp.456-461
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• 2012

We studied the emission characteristics of white phosphorescent organic light-emitting diodes (PHOLEDs), which were fabricated using a two-wavelength method. To optimize emission characteristics of white PHOLEDs, white PHOLEDs with red/blue, blue/red and red/blue/red emitting layer (EML) structures were fabricated using a host-dopant system. In case of white PHOLEDs with red/blue structure, the best efficiency was obtained at a structure of red (15 nm)/blue (15 nm). But the emission color was blue-shifted white. In case of white PHOLEDs with blue/red structure, the better color purity and efficiency were observed at a blue (29 nm)/red (1 nm) structure. For additional improvement of color purity in white PHOLEDs with blue (29 nm)/red (1 nm) EMLs, we fabricated white PHOLEDs with red (1 nm)/blue (28 nm)/red (1 nm) structure. The current efficiency, external quantum efficiency, and CIE (x, y) coordinate were 27.2 cd/A, 15.1%, and (0.382, 0.369) at 1,000 $cd/m^2$, respectively.