• Transactions of the Korean Society of Mechanical Engineers B
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• v.21 no.10
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• pp.1284-1293
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• 1997

The electrostatic effect on particle deposition onto a heated, Horizontal free-standing wafer surface was investigated numerically. The deposition mechanisms considered were convection, Brownian and turbulent diffusion, sedimentation, thermophoresis and electrostatic force. The electric charge on particle needed to calculate the electrostatic migration velocity induced by the local electric field was assumed to be the Boltzmann equilibrium charge. The electrostatic forces acted upon the particle included the Coulombic, image, dielectrophoretic and dipole-dipole forces based on the assumption that the particle and wafer surface are conducting. The electric potential distribution needed to calculate the local electric field around the wafer was calculated from the Laplace equation. The averaged and local deposition velocities were obtained for a temperature difference of 0-10 K and an applied voltage of 0-1000 v.The numerical results were then compared with those of the present suggested approximate model and the available experimental data. The comparison showed relatively good agreement between them.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.26 no.12
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• pp.1715-1721
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• 2002

Numerical analysis was conducted to characterize the gas flow field and particle deposition on a horizontal freestanding semiconductor wafer under the laminar flow field at vacuum environment. In order to calculate the properties of gas, the gas was assumed to obey the ideal gas law. The particle transport mechanisms considered were convection, Brownian diffusion and gravitational settling. The averaged particle deposition velocities and their radial distributions fnr the upper surface of the wafer were calculated from the particle concentration equation in an Eulerian frame of reference for system pressures of 1 mbar~1 atm and particle sizes of 2nm~10$^4$ nm(10 ${\mu}{\textrm}{m}$). It was observed that as the system pressure decreases, the boundary layer of gas flow becomes thicker and the deposition velocities are increased over the whole range of particle size. One thing to be noted here is that the deposition velocities are increased in the diffusion dominant particle size range with decreasing system pressure, whereas the thickness of the boundary layer is larger. This contradiction is attributed to the increase of particle mechanical mobility and the consequent increase of Brownian diffusion with decreasing the system pressure. The present numerical results showed good agreement with the results of the approximate model and the available experimental data.