• Proceedings of the Materials Research Society of Korea Conference
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• 1992.05b
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• pp.26-27
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• 1992

The effect of activation and electroless nickel plating conditions on contact properties were investigated for selective electroless nickel plating of Si farers in order to obtain an optimum condition of contact hole filling. According to RCA prosess, p-type si 1 icon (100) surface was cleaned out and activated. The effects of temperture, DMAB concentration, time, and stirring iwere investigated for activation of p-type Si(100) surface. The optimal activation condition obtained was 0.5M HF, 1mM PdCl$_2$, 2mM EDTA, 7$0^{\circ}C$, 90sec under ultrasonic vibration. In electroless nickel plating, the effect of temperature, DMAB concentration, pH, and plating ti me were studied. The optimal plating condition found was 0. 10M NiS0$_4$.$H_2O$, 0.lIM Citrate, pH 6.8, 6$0^{\circ}C$, 30 minutes. The contact resistence of fi]ms wascomparatively low. It took 30 minutes to obtain 1$\mu$m thick film with 8$\mu$M DMAB concentration. The film surface roughness was improved with increasing temperature and decreasing pH of the plating solution. The best quality of the film was obtained with the condition of temperature 6$0^{\circ}C$ and pH 6.8. The micro-victors hardness of film was about 600Hv and was decreased wi th increasing particle size of plating layer.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.246-246
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• 2010

As the trench width in the interconnect technology decreases down to nano-scale below 50 nm, superconformal gap-filling process of Cu becomes very critical for Cu interconnect. Obtaining superconfomral gap-filling of Cu in the nano-scale trench or via hole using MOCVD is essential to control nucleation and growth of Cu. Therefore, nucleation of Cu must be suppressed near the entrance surface of the trench while Cu layer nucleates and grows at the bottom of the trench. In this study, suppression of Cu nucleation was achieved by treating the Ru barrier metal surface with capacitively coupled hydrogen plasma. Effect of hydrogen plasma pretreatment on Cu nucleation was investigated during MOCVD on atomic-layer deposited (ALD)-Ru barrier surface. It was found that the nucleation and growth of Cu was affected by hydrogen plasma treatment condition. In particular, as the plasma pretreatment time and electrode power increased, Cu nucleation was inhibited. Experimental data suggests that hydrogen atoms from the plasma was implanted onto the Ru surface, which resulted in suppression of Cu nucleation owing to prevention of adsorption of Cu precursor molecules. Due to the hydrogen plasma treatment of the trench on Ru barrier surface, the suppression of Cu nucleation near the entrance of the trenches was achieved and then led to the superconformal gap filling of the nano-scale trenches. In the case for without hydrogen plasma treatments, however, over-grown Cu covered the whole entrance of nano-scale trenches. Detailed mechanism of nucleation suppression and resulting in nano-scale superconformal gap-filling of Cu will be discussed in detail.

• Proceedings of the KWS Conference
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• 2006.05a
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• pp.227-229
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• 2006

3차원 실장을 하기 위해서 딥핑 방법으로 전기적 신호를 전달할 수 있는 비아를 가진 실리콘 웨이퍼를 제작하였다. 레이저를 이용하여 실리콘 웨이퍼에 개구부가 원형에 가까운 관통 홀을 형성하였다. 관통 홀의 벽에 도금 방법으로 시드 층을 형성하였다. 관통 홀의 충전 금속은 Sn-3.5Ag-0.7Cu 솔더를 사용하였다. 딥핑 방법으로 시드 층과 솔더 사이의 확산 현상 이용하여 전기적 신호를 전달 할 수 있는 비아를 형성하였다. 비아 내부에 일부 기공과 크랙이 발견되기도 했으나 딥핑 방법을 통해서 빠른 시간 내에 비아를 가진 실리콘 웨이퍼를 제작 할 수 있었다.

• Proceedings of the Korean Society of Broadcast Engineers Conference
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• 2021.06a
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• pp.75-77
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• 2021

MPEG 비디오 그룹은 제한된 3D 공간 내에서 움직임 시차(motion parallax)를 제공하면서 원하는 시점(view)을 렌더링(rendering)하기 위한 표준으로 TMIV(Test Model for Immersive Video)라는 테스트 모델과 함께 효율적인 몰입형 비디오의 부호화를 위한 MIV(MPEG Immersive Video) 표준을 개발하고 있다. 몰입감 있는 시각적 경험을 제공하기 위해서는 많은 수의 시점 비디오가 필요하기 때문에 방대한 양의 비디오를 고효율로 압축하는 것이 불가피하다. TMIV 는 여러 개의 입력 시점 비디오를 소수의 아틀라스(atlas) 비디오로 변환하여 부호화되는 화소수를 줄이게 된다. 아틀라스는 선택된 소수의 기본 시점(basic view) 비디오와 기본 시점으로부터 합성할 수 없는 나머지 추가 시점(additional view) 비디오의 영역들을 패치(patch)로 만들어 패킹(packing)한 비디오이다. 본 논문에서는 아틀라스 비디오의 보다 효율적인 부호화를 위해서 패치 내에 생기는 작은 홀(hole)들을 채우는 기법을 제안한다. 제안기법은 기존 TMIV8.0 에 비해 1.2%의 BD-rate 이 향상된 성능을 보인다.

• Journal of the Microelectronics and Packaging Society
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• v.21 no.4
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• pp.91-96
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• 2014

Through silicon via (TSV) technology is to form a via hole in a silicon chip, and to stack the chips vertically for three-dimensional (3D) electronics packaging technology. This can reduce current path, power consumption and response time. In this study, Cu-filling substrate size was changed from Si-chip to a 4" wafer to investigate the behavior of Cu filling in wafer level. The electrolyte for Cu filling consisted of $CuSO_4$ $5H_2O$, $H_2SO_4$ and small amount of additives. The anode was Pt, and cathode was changed from $0.5{\times}0.5cm^2$ to 4" wafer. As experimental results, in the case of $5{\times}5cm^2$ Si chip, suitable distance of electrodes was 4cm having 100% filling ratio. The distance of 0~0.5 cm from current supplying location showed 100% filling ratio, and distance of 4.5~5 cm showed 95%. It was confirmed good TSV filling was achieved by plating for 2.5 hrs.

• Explosives and Blasting
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• v.36 no.2
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• pp.1-9
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• 2018

In this paper, AUTODYN blasting simulation of single blast hole were conducted to evaluate the blasting effects of Polymer Gel. The coupling mediums used as the filling material around an explosive charge were air and gelatin. each simulation case was D I(decoupling index) 1.0, 1.25, 1.56 with air or polymer gel coupling materials. In order to evaluate blast effects full charge model was used as a reference for evaluation of blasting effects. The results of numerical analysis showed that fragmentation of a limestone model of were much more fractured by polymer gel medium than by air medium. As expected, the transmitted peak pressure was higher polymer gel coupled model than in air medium.

• Proceedings of the IEEK Conference
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• 1998.10a
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• pp.1041-1044
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• 1998

In this paper the cellular neural networks with annealing capability is designed. The annealing capability helps the networks escape from the local-minimum points and quickly search for the global-minimum point. A 6$\times$6 CNN chip is designed using a $0.8\mu\textrm{m}$ CMOS technology, and the chip area is 2.89mm$\times$2.89mm. The simulation results for hole filling image processing show that the general CNN has a local-minimum problem, but the annealed CNN finds the global-minimum solutions very efficiently.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2015.05a
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• pp.136-136
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• 2015

2007년 일본에서 지갑전화나 지상파 디지털TV 방송기능을 탑재한 휴대전화개발에 힘을 쏟고 있을 무렵, 해외에서 컴퓨터에 가까운 스마트폰이라는 다기능단말기 개발이 진행되고 있었다. 스마트폰은 젊은이를 중심으로 인기가 높아지고 있다. 휴대전화를 시작으로 정밀전자기기에는 인쇄배선판(이하, PWB: Printed Wiring Board)이 내장되어 있다. PWB는 향후 하이브리드차나 전기자동차의 발전과 함께, 차량탑재 수요도 높아질 것이다. 본고에서는 PWB를 지탱하는 동 도금 Via Hole메움에 대하여 기술하였다.

• Journal of the Korean Geotechnical Society
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• v.25 no.5
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• pp.47-52
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• 2009

A sand replacement method is commonly used to determine the density of the compacted soils. The density of the test or compacted soil is computed on the assumption that the calibration container has approximately the same size or volume and allows the sand to deposit approximately in the same way as a test hole in the field. The sand filling process is simulated in the laboratory and its effect on the determination of density is investigated. Artificially-made holes with different heights and bottom shapes are prepared to simulate various shapes of the test hole in the field. Three sands with different gradations are used in the testing to examine how sand grain size influences the determination of density in the field. As the height of a test hole increases, the error between known density and calculated density decreases, regardless of the types of test hole and sand used. The results of this study can be used to reevaluate and revise the test method for soil density by the sand replacement method.

• Journal of the Mineralogical Society of Korea
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• v.17 no.1
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• pp.99-114
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• 2004

Mineralogical characteristics of fracture-filling minerals from deep borehole in the Yuseong area were studied for the radioactive waste disposal project. There are many fracture zones in the deep drill holes of the Yuseong granite, which was locally affected by the hydrothermal alteration. According to the results of hole rock analysis of drill core samples, $SiO_2$ contents are distinctly decreased, whereas $Al_2$$O_3$ and CaO contents and L.O.I. values are increased in the -90 m∼-130 m and -230 m∼-250 m zone, which is related to the formations of filling minerals. Fracture-filling minerals mainly consist of zeolite minerals (laumontite and heulandite), calcite, illite ($2M_1$ and 1Md polytypes), chlorite, epidote and kaolinite. The relative frequency of occurrence among the fracture-filling minerals is calcite zeolite mineral > illite > epidote chlorite kaolinite. Judging from the SEM observation and EPMA analysis, there is no systematic change in the texture and chemical composition of the fracture-filling minerals with depth. In the study area, low temperature hydrothermal alteration was overlapped with water-rock interactions for a long geological time through the fracture zone developed in the granite body. Therefore the further study on the origin and paragenesis of the fracture-filling minerals are required.