• Journal of Korean Ophthalmic Optics Society
• /
• v.11 no.3
• /
• pp.281-291
• /
• 2006

The aim of this study was performed the clinical test using Netspeg lens for good visual acuity on subjects with abnormal refraction status. The subjects of one hundreds adults (fifty males, fifty females, mean=21 years, range=19 to 24) were recorded. The subjects were researched the history including the systemic health, medication, genetics, allergy, systemic disease and ocular disease. The refraction test was recorded the monocular and binocular using objective method. Visual acuity was performed the binocular status using the Netspeg lens and CR-39. Stereopsis test was performed the titmus fly and TNO at near distance using Netspeg lens and CR-39. The P-VEP test was used the 16 pattern size(Bausch Lomb, production in USA) with three channels. Also Subjects viewed the p-vep stimulus with binocular vision through the corrected visual acuity using the Netspeg lens and CR-39. The contrast sensitivity test was performed the contrast sensitivity chart(pelli-Robertson, USA) at 1m distance using the Netspeg lens and CR-39. The ultrastructure of surface on the Netspeg lens and CR-39 was observed the SEM(JMS-5800, made in Japan). The results of this study was as follows: 1. In corrected visual acuity of abnormal refraction using the Netspeg lens and CR-39, the Netspeg lens wearer were acquired the good visual field and clear visual acuity comparative to CR-39 wearer in the subject vision test. however the comfort of visual acuity was similar results in the Netspeg lens and CR-39. Also the subjects of Netspeg lens wearer was good visual acuity more than CR-39 wearer and in the analysis of P-VEP, the amplitude of wave on Netspeg lens used appears to be better through the CR-39(p>0.5). Besides, on the contrast sensitivity, the Netspeg lens wearer was good results than CR-39. The value on stereopsis with TNO by Netspeg lens wearer was better than CR-39 in results. However, in the stereopsis test with Titmus, the Netspeg lens and CR-39 wearer was similar results. 2. The ultrastructure of Netspeg lens surface was the smooth and fine shape more than CR-39. Also, Netspeg lens have a fine line structure in ultrastructure. In conclusion, the results of this study conformed that the surface ultrastructure of Netspeg lens used is more specific pin hole design structure than CR-39. This study indicated that the vision of Netspeg lens used have a better than CR-39 in the corrected visual acuity for abnormal refraction eye. Therefore, In this paper, we suggested that the ultrastructure and line structure of Netspeg lens was related to good visual function. However the visual function of the aspheric Netspeg and ultra waterproof Netspeg lens was similar results.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2010.06a
• /
• pp.31-31
• /
• 2010

The growth of the high-quality GaN epilayers is of significant technological importance because of their commercializedoptoelectronic applications as high-brightness light-emitting diodes (LEDs) and laser diodes (LDs) in the visible and ultraviolet spectral range. The GaN-based heterostructural epilayers have the polar c-axis of the hexagonal structure perpendicular to the interfaces of the active layers. The Ga and N atoms in the c-GaN are alternatively stacked along the polar [0001] crystallographic direction, which leads to spontaneous polarization. In addition, in the InGaN/GaN MQWs, the stress applied along the same axis contributes topiezoelectric polarization, and thus the total polarization is determined as the sum of spontaneous and piezoelectric polarizations. The total polarization in the c-GaN heterolayers, which can generate internal fields and spatial separation of the electron and hole wave functions and consequently a decrease of efficiency and peak shift. One of the possible solutions to eliminate these undesirable effects is to grow GaN-based epilayers in nonpolar orientations. The polarization effects in the GaN are eliminated by growing the films along the nonpolar [$11\bar{2}0$] ($\alpha$-GaN) or [$1\bar{1}00$] (m-GaN) orientation. Although the use of the nonpolar epilayers in wurtzite structure clearly removes the polarization matters, however, it induces another problem related to the formation of a high density of planar defects. The large lattice mismatch between sapphiresubstrates and GaN layers leads to a high density of defects (dislocations and stacking faults). The dominant defects observed in the GaN epilayers with wurtzite structure are one-dimensional (1D) dislocations and two-dimensional (2D) stacking faults. In particular, the 1D threading dislocations in the c-GaN are generated from the film/substrate interface due to their large lattice and thermal coefficient mismatch. However, because the c-GaN epilayers were grown along the normal direction to the basal slip planes, the generation of basal stacking faults (BSFs) is localized on the c-plane and the generated BSFs did not propagate into the surface during the growth. Thus, the primary defects in the c-GaN epilayers are 1D threading dislocations. Occasionally, the particular planar defects such as prismatic stacking faults (PSFs) and inversion domain boundaries are observed. However, since the basal slip planes in the $\alpha$-GaN are parallel to the growth direction unlike c-GaN, the BSFs with lower formation energy can be easily formed along the growth direction, where the BSFs propagate straightly into the surface. Consequently, the lattice mismatch between film and substrate in $\alpha$-GaN epilayers is mainly relaxed through the formation of BSFs. These 2D planar defects are placed along only one direction in the cross-sectional view. Thus, the nonpolar $\alpha$-GaN films have different atomic arrangements along the two orthogonal directions ($[0001]_{GaN}$ and $[\bar{1}100]_{GaN}$ axes) on the $\alpha$-plane, which are expected to induce anisotropic biaxial strain. In this study, the anisotropic strain relaxation behaviors in the nonpolar $\alpha$-GaN epilayers grown on ($1\bar{1}02$) r-plane sapphire substrates by metalorganic chemical vapor deposition (MOCVO) were investigated, and the formation mechanism of the abnormal zigzag shape PSFs was discussed using high-resolution transmission electron microscope (HRTEM).

• Journal of Sericultural and Entomological Science
• /
• no.11
• /
• pp.1-14
• /
• 1970

The following results were obtained by surveying the productivity of mulberry fields in Korea. 1. The productivity of mulberry field per 10a in which cocoon can be yield belongs to the range of 9.8∼105kg, and among them the productivity of 20 to 60kg was chiefly distributed. And their average was 50.2kg. 2. In general, the larger the mulberry field in scale per a person is, the lower the productivity of it is, but about 6.6 ares per a person was estimated to be economic scale for high productivity. 3. As far as the texture of soil is concerned, sandy-loam and loam contained a capacity of higher productivity while others like clay and sand that of lower productivity, And the depth of surface soil must be at least 50cm, although 70cm's depth of surface sail could bring about high productivity. 4. Fertilization of 900kg's compost on planting and 1,200kg's that after planting could enhance the productivity, because the use of compost have a positive relation to the productivity. 5. The greater the number of farmer's domestic animals is as a source of organic matter the higher the productivity is. 6. In the case of fertilization of 1,200kg compost, the amount of 20kg's nitrogen per 10 ares as chemical manure was best for high productivity. However, fertilization of 14.7kg's nitrogen as average amount of that, which is far below the standard amount, had been a factor to reduce the productivity of mulberry field. 7. In pruning the low-cut form resulted in high productivity, but as their shape become taller due to the lack of techniques, they were turned out to be non head pruning, thus to produce poor harvest of leaves. 8. The pure mulberry fields showed better productivity than others such as wide and narrow ridge planting and inter-crop planting. 9. As for the degree of planting density, at least 800 trees per 10 ares should be planted to increase the productivity, although the planting of 713 trees per 10 ares could be possible in case of the low stemmed pruning. 10. The hole and tranch in planting must be digged as wider and dipper as possible far the better growth of mulberry tree. 11. On the whole, varieties like NOsang and Y oung-cheun choowoo had a tendency of lower productivity.

• Journal of Korean Society of Forest Science
• /
• v.19 no.1
• /
• pp.1-23
• /
• 1973

The results of ground vegetation experiment conducted at completely denuded forestland in the mudstone region are summerized as follows: On the reaults of soiling quantity the effect of soiling was observed where depth of soiling over 10 cm was practiced, and a plot where treated with 15cm soiling and without fertilizer showed poor growth and it was even worser than the plot where soiling was practiced only 1 cm in thikness but applied adequate amount of fertilizers. The depth of slits between 30cm and 40cm showed no significant difference in the effect. A plot where covered with vegetation bag showed somewhat better results in seed loss and early growth but no differences observed in the fall result over the none covered plot. And then, it is recommendable to have soiling over 10cm in thikness with slit of 30cm and 30cm in depth and to apply 30 gram of fertilizer (22;22:11, 50 gram) per slit. On various soiling materials trial there were no striking differences in the effect of soiling between weathered granite soil, wheathered tuffs soil and weathered mudstone soil. In the treatment with various green materials, a plot treated with straw mat showed a significant difference at 1 percent. The results show that weathered mudstone soil is effective to use as soiling materials and straw mat treatment was better. On forest fertilization trial, in the mudstone region where red and black pine trees already existing at a rate of 2,000-3,000 trees per hectare had applied 110kg of compound fertilizers (9:12:3 and 22:22:11) per hectare basis in terms of plant nutrient. As a result, the difference in effect between the compound fertilizers was not found however the leaf color and leaf length of the fertilizer added plot showed darker and longer at 30 percent over the no fertilizer received plot. Compound fertilizers, 14:37:12 and 9:12:3 were applied to alder trees at a rate of 20 gram and 40 gram per tree in terms of plant nutrient and a remarkable growth accelerantion was observed where 40 grams of plant nutrient applied. The effect difference between the compound fertilizers was not found. On investigation of tree root elongation, forty years old red pine trees showed only 15cm tap root elongation through mudstone while black pine had 23 cm tap root elongation. The total length of supporting root elongtion of red and black pines showed 20 and 13 meters, respectively. The tap roots of Black locusts were not able to elongate through mudstone, however, the supporting roots tended to develop to the underneath of pine tree where some moisture content is available. Black locusts And grown on the residual soil of mudstone normally die between 8 to 10 years. The red pine trees show flat in tree shape while black pine had triangle in the shape. With the results it can be said that in an artificial reforestation in denuded forest land of the mudstone region the adequate slit and enough amount of fertiliizer application must be provided for the succesful performance of the program. On integrated experimental results of 1972. for the establishment of ground vegetation on the completely denuded forest land in mudstone region, soiling could be effectively practiced with weathered mudstone soil and it would not specially necessiate to have either weathered granite or tuffssoil for the soiling. And the soiling depth should be more than 10 cm in thickness. Among green materials used the straw mat proved to be the most effective reatment. Three major factors which enable to establish ground vegetation by the shortest period of time: A. Physical improvement of soil is necessary to breakdown of the horizontal cracks sushas Slit, contour line plot, seeding hole and etc., and soiling with weathered mudstone soil. B. Chemical improvement of soil: is needed sufficient amount of fertilizer application 300~400kg ha, $N+P_2O_5+K_2O$), and increased production of ground covering and expedite resolution of the vegetation (ground vegetation, fallen leaves and twigs). C. Complete establishment of the basic structure for the erosion control (Prevention of surface soil erosion)