• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1408-1409
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• 2005

Organic light-emitting diodes (OLEDs) of metalsemiconductor-metal (MSM) structure have been fabricated by using m-MTDATA [4,4',4"-tris (3-methylphenylphenylamino) triphenylamine] as a hole-injection layer (HIL). The m-MTDATA is shown to be an effective hole-injecting material for the OLED, in that the insertion of m-MTDATA greatly reduces the roughness of anode surface and improves the device performance.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.901-902
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• 2003

Three-color organic light-emitting diodes (OLEDs) of metal-semiconductor-metal (MSM) structure have been favricated by using m-MTDATA [4,4',4"-tris (3-methylphenylphenylamino) triphenylamine] as hole injection layer(HIL). The mMTDATA is shown to be an effective hole injecting material, in that the insertion of mMTDATA greatly reduces the roughness of anode surface and improves the device performance. Red, green and blue OLEDs were fabricated, and their color coordinates in CIE chromaticity were found to be (0.600, 0.389), (0.240, 0.525), and (0.171, 0.171), respectively. The luminous efficiencies of the fabricated OLEDs were 1.4 lm/W at 106 $cd/m^{2}$ for red, 1.4 lm/W at 100 $cd/m^{2}$ for green, and 2.0 lm/W at 104 $cd/m^{2}$ for blue.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.2
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• pp.228-235
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• 2004

In this thesis, it is designed efficient electrode formation on the organic luminescent device. ITO electrode is treated with $O_2$plasma. In order to inject hole efficiently, there is proposed the shape of anode that inserted plasma polymerized films as buffer layer between anode and organic layer using thiophene monomer. It is realized efficiently electron injection to aluminum due to introduce the quantum well in cathode. In the case of device inserted the buffer layer by using the plasma poiymerization after $O_2$plasma processing for ITO transparent electrode, since it forms the stable interface and reduce the moving speed of hole, the recombination of hole and electronic ate made in the omitting layer. Compared with the devices without buffer layer, the turn-on voltage was lowered by 1.0(V) doc to the introduction of buffer layer Since the quantum well structure is formed in front of cathode to optimize the tunneling effect, there is improved the power efficiency more than two times.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.310-310
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• 2009

In the two structure of ITO/N,N'-diphenyl-N,N' bis (3-methylphenyl)-1,1'-biphenyl-4,4'-diamine(TPD)/R-H : R-D/Al device, ITO/Amorphous Fluoropolymers/TPD/R-H : R-D/LiF/Al device. we studied the effect of organic materials defending on the electrical characteristics of red OLEDs. The thickness of TPD and R-H : R-D was manufactured 40 nm, 60 nm, respectively under a base pressure of $5\times10^{-6}$Torr using a thermal evaporation. The AF used for an hole-injection is the thickness of 0.5 [nm] and the LiF used for an electron-injection is the thickness of 0.5 [nm]. Compared to the two from the devices made with the hole injection and without hole injection We found that the luminous efficiency and the external quantum efficiency are improved a fact of one- hundred, two, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.447-450
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• 2003

In this paper, new luminescent material, 6,11-dihydoxy-5,12-naphtacene-dione Alq3 complex (Alq2-Ncd), 1,4-dihydoxy-5,8-naphtaquinone Alq3 complex(Alq2-Nq) was synthesized. And extended efforts had been made to obtain high-performance electroluminescent(EL) devices, since the first report of organic light-emitting diodes(OLEDS) based on tris-(8-hydroxyquinoline) aluminum(Alq3). We have performed investigate characterization of the materials. Current-voltage characteristics, luminance-voltage characteristics and luminous efficiency were measured by Flat Panel Display Analysis System(Model 200-AT) at room temperature. An intensive research is going on to improve the device efficiency using the hole injection layer, different electrodes, and etc. By using the hole injection layer, the charge-injection can be controlled and the stability could be improved. This study indicates not only the sterical effect but also some other effects would be responsible for the change of the emission wavelength.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.497-500
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• 2001

Due to their better photosensitivity in X-ray, the amorphous selenium based photoreceptor is widely used on the X-ray conversion materials. It was possible to control the charge carrier transport of amorphous selenium by suitably alloying a-Se with other elements(e,g. As, Cl). The charge transport properties of amorphous Selenium is decided on hole which is induced from metal to selenium in metal-selenium junction and which is transferred in a-Se bulk. This phenomenon is resulted of changing electric field owing to increasing of space charge by deep trap of a-Se bulk. In this paper, We dopped the chlorine to compensate deep hole trap and deposited blocking layer using dielectric material to prevent from increasing space charge for injection charge between metal electrode and a-Se layer. We compared space charge and the decreasing of trap density through measuring dark and photo current.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.9
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• pp.750-754
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• 2011

In this research, the electric characteristic of organic light-emitting diodes(OLEDs) was studied depending on thickness of amorphous fluoropolymer(Teflon-AF) which is the material of hole injection layer to improve electric characteristic of OLEDs. Sample composition was fabricated in double layer. The basic structure was fabricated by ITO/tris(8-hydroxyquinoline) aluminum (Alq3)/Al and the 2 layer was fabricated by ITO/2,2-Bistrifluoromethyl-4,5-Difluoro-1,3-Dioxole(Teflon-AF)/tris(8-hydro xyquinoline) aluminum (Alq3)/Al. The experiment was carried with variation of thickness of Teflon-AF at 1.0, 2.0, 2.5, 3.0 nm. The result showed when Teflon-AF thickness was 2.5 nm, the electric and optical characteristic were well performed. Moreover, when it was compared with Teflon-AF without materials, it was improved 15.1 times more on luminance, 12.7 times more on luminous efficiency and 12.1 times more on external quantum efficiency. Therefore, OLEDs element with optimum hole injection layer reduced energy barrier and driving voltage, and confirmed that it improved efficiency widely.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.215-215
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• 2014

Red color light emitting diodes (LEDs) were fabricated using CdSe/CdZnS quantum dots (QDs). During the device fabrication process, oxygen plasma treatment on the ITO surface was performed to improve the interfacial contact between ITO anode and the hole injection layer. CdSe/CdZnS quantum dots were cross-linked to remove their surrounded organic surfactants. The device shows red emission at 622 nm, which is consistent with the dimension of the QDs (band gap=1.99 eV). The luminance shows 6026% improvement compared with that of LEDs fabricated without oxygen plasma treatment and quantum dots cross-linking process. This approach would be useful for the fabrication of high-performance QLEDs with ITO electrode and PEDOT:PSS hole injection layers.

• 한국정보디스플레이학회:학술대회논문집
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• 2000.01a
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• pp.127-128
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• 2000

Organic light-emitting diodes(OLEDs) are constructed using multilayer organic thin films. The hole-transport layer is PVK and the emitting material is rubrene and $Alq_3$. The emitting layer is doped with rubrene partially. As the partially-doped layer migrate from the interface PVK/emitting layer, the emission peak of rubrene decrease and diminish. By comparing with the previous reports, we propose the zero-field hole injection barrier at ITO/PVK interface and hole-trapping effect of rubrene in host materials as predominant factor to determine the emission zone.

• Transactions on Electrical and Electronic Materials
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• v.6 no.3
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• pp.101-105
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• 2005

Electroluminescence(EL) and current-voltage(I-V) characteristics of hybrid EL devices containing Pr and Mn co-doped ZnS nanoparticles were investigated in this study. For the insertion of a hole transport layer of poly (N-vinyl carbazole)(PVK), the current level became lower due to the accumulation of electrons at the interface between PVK and nanoparticles. When both PVK and buffer layer $BaF_2$ were simultaneously introduced, the enhanced EL efficiency and improved I-V characteristics were obtained. This results from the additional increase of hole injection owing to the internal field induced by the significant accumulation of electrons at the interface. The presence of buffer layer $BaF_2$ together with PVK makes it possible the charge accumulation enough to induce the sufficient internal field for further hole injection.