• Journal of the Microelectronics and Packaging Society
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• v.13 no.4
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• pp.51-56
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• 2006

Polymer light emitting diodes (PLEDs) with ITO/EDOT:PSS/PVK/PFO-poss/LiF/Al structures were prepared by the spin coating method on ITO(indium tin oxide)/glass substrates. PFO-poss[Poly(9,9-dioctylfluorenyl-2,7-diyl) end capped with poss] was used as light emitting polymer. PVK[poly(N-vinyl carbazole)] and PEDOT:PSS [poly(3,4-ethylenedioxythiophene):poly(styrene sulfolnate)] polymers were used as the hole injection and transport materials. The effect of PFO-poss concentration and the heating temperatures on the electrical and optical properties of the devices were investigated. At the same concentration of PFO-poss solution, the current density and luminance of PLED device tend to increase as the annealing temperature increase from $100^{\circ}C$ to $200^{\circ}C$. The maximum luminance was found to be about 958 cd/m2 at 13V for the PLED device with 1.0 wt% PFO-poss at the annealing temperature of $200^{\circ}C$. In addition, the PLED device showed bluish white emission through the strong greenish peak with 523 nm in wavelength. As the concentration of PFO-poss increase from 0.5 wt% to 1.0 wt% and temperature of PLEDs increase from $100^{\circ}C$ to $200^{\circ}C$, the emission color tend to be shifted from blue with (x, y) = (0.17,0.14) to bluish white with (x, y) : (0.29,0.41) in CIE color coordinate.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.65 no.5
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• pp.819-824
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• 2016

The accelerated thermal aging of CSPE (chlorosulfonated polyethylene) was carried out for 33.64 and 67.27 days at 110[$^{\circ}C$], equivalent to 40 and 80 years of aging at 50[$^{\circ}C$], respectively. These samples were referred to as CSPE-0y, CSPE-40y and CSPE-80y, respectively. As the accelerated thermally aged years of the CSPE increase, the insulation resistance[$\Omega$] at 20[Hz], 500[Hz], and 2[KHz], and the percent elongation [%EL] of the CSPE decrease. However, the dissipation factor($tan{\delta}$) at 20[Hz], 500[Hz], and 2[KHz], the apparent density[$g/cm^3$], the glass transition temperature and the melting temperature of the CSPE were increased. The period of time that the voltage has to be applied until electric breakdown of the CSPE-0y is longer than that of the CSPE-40y, and the CSPE-80y, but the dielectric strength of the CSPE-80y is lower than that of the CSPE-0y and the CSPE-40y. The differential temperatures after the AC and DC voltages are applied to CSPE-0y, CSPE-40y and CSPE-80y are 0.026~0.028[$^{\circ}C$], 0.030~0.042[$^{\circ}C$], 0.018~0.045[$^{\circ}C$], respectively. The variations of temperature for the AC voltage are higher than those for the DC voltage when an AC voltage is applied to CSPE-0y, CSPE-40y and CSPE-80y. It is found that the dielectric loss owing to the dissipation factor[$tan{\delta}$] is related to the electric dipole conduction current. It is ascertained that the ionic (electron or hole) leakage current is increased by the separation of the branch chain of CSPE polymer from the main chain of the polyethylene as a result of thermal stress due to accelerated thermal aging as well as by conducting ions such as $Na^+$, $Cl^-$, $Mg^{2+}$, $SO_4^{2-}$, $Ca^{2+}$ and $K^+$ after seawater soaking.

• Geophysics and Geophysical Exploration
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• v.10 no.4
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• pp.322-331
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• 2007

In this study, electrical resistivity tomography (ERT) were conducted to find the mineralized zone at the Geumpung mine in Dojeon-ri, Susan-myeon, Jecheon-si, Chungcheongbuk-do. The deviation of the inclined borehole was measured to obtain the exact positions of the electrodes for correcting apparent resistivity values from ERT. Geophysical loggings such as resistivity and natural gamma were conducted to obtain the properties of the material near the borehole. Measurements of the physical properties of the cores, such as porosity, water content, density, susceptibility, resistivity were performed to analyze the correlation between physical properties and resistivity. Grade analysis for core sample was also conducted to identify relationship between grade and resistivity. Rock property analysis shows that the resistivity is more dominated by susceptibility and grade than by porosity and water content in the mineralized zone. The results of ERT are well consistent with geophysical logging data and geologic column. So ERT is powerful method to identify conductive mineralized zone.

• Journal of the Korean Magnetics Society
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• v.17 no.4
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• pp.166-171
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• 2007

We report the magneto-transport properties of an individual single crystalline Bi nanowire grown by a spontaneous growth method. We have successfully fabricated a four-terminal device based on an individual 400-nm-diameter nanowire using plasma etching technique to remove an oxide layer forming on the outer surface of the nanowire. The transverse MR (2496% at 110 K) and longitudinal MR ratios (38% at 2 K) for the Bi nanowire were found to be the largest known values in Bi nanowires. This result demonstrates that the Bi nanowires grown by the spontaneous growth method are the highest-quality single crystalline in the literatures ever reported. We find that temperature dependence of Fermi energy ($E_F$) and band overlap (${\triangle}_0$) leads to the imbalance between electron concentration ($n_e$) and hole concentration ($n_h$) in the Bi nanowire, which is good agreement with the calculated $n_e\;and\;n_h$ from the respective density of states, N(E), for electrons and holes. We also find that the imbalance of $n_e\;and\;n_h$ plays a crucial role in determining magnetoresistance (MR) at T<75 K for $R_T$ and at T<205 K for $R_L$, while mean-free path is responsible for MR at T>75 K for $R_T$ and T>205 K for $R_L$.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.276-276
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• 2010

Localized surface plasmon resonance (LSPR) has been explored recently as a promising approach to increase energy conversion efficiency in photovoltaic devices, particularly for thin film hydrogenated amorphous silicon (a-Si:H) solar cells. The LSPR is frequently excited via an electromagnetic (EM) radiation in proximate metallic nanostructures and its primary con sequences are selective photon extinction and local EM enhancement which gives rise to improved photogeneration of electron-hole (e-h) pairs, and consequently increases photocurrent. In this work, high-dielectric-constant (k) $ZrO_2$ (refractive index n=2.22, dielectric constant $\varepsilon=4.93$ at the wavelength of 550 nm) is proposed as spacing layer to enhance the LSPR for application to the thin film silicon solar cells. Compared to excitation of the LSPR using $SiO_2$ (n=1.46, $\varepsilon=2.13$ at the wavelength of 546.1 nm) spacing layer with Au nanoparticles of the radius of 45nm, that using $ZrO_2$ dielectric shows the advantages of(i) ~2.5 times greater polarizability, (ii) ~3.5 times larger scattering cross-section and ~1.5 times larger absorption cross-section, (iii) 4.5% higher transmission coefficient of the same thickness and (iv) 7.8% greater transmitted electric filed intensity at the same depth. All those results are calculated by Mie theory and Fresnel equations, and simulated by finite-difference time-domain (FDTD) calculations with proper boundary conditions. Red-shifting of the LSPR wavelength using high-k $ZrO_2$ dielectric is also observed according to location of the peak and this is consistent with the other's report. Finally, our experimental results show that variation of short-circuit current density ($J_{sc}$) of the LSPR enhanced a-Si:H solar cell by using the $ZrO_2$ spacing layer is 45.4% higher than that using the $SiO_2$ spacing layer, supporting our calculation and theory.

• Asia-pacific Journal of Multimedia Services Convergent with Art, Humanities, and Sociology
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• v.9 no.9
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• pp.721-736
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• 2019

In this paper, the behavior of the fire smoke due to the operation of the ventilation systems when the fire occurred in the underground station (6 basement floors) and the tunnel at the great depth was measured. Fire smoke was generated by using a smoke generator which realized heat buoyancy effect by using hot air blower. The two locations of the fire were selected on the platform and on the platform of the tunnel located outside the screen door. A ventilation mode is generally used in which smoke is exhausted through a vent hole provided in a platform when a platform fire occurs. The tests were performed by operating the exhaust through the ventilation holes of the tunnel part located at both ends of the platform. The smoke density and the wind speed/velocity were measured at various positions, and the videos were taken to analyze the movement and smoke of the smoke. In both cases for fire inside the platform and in the railway tunnel, due to the ventilation mode operation of the fan for the platform and the exhaust of the fans in the tunnel smoke were well exhausted and the smoke propagation to the area near the smoke zone was suppressed. The smoke-control mode, which is applied to both fans for the platform and fans for in the tunnel at both ends of the platform, can provide a safer evacuation environment to the passengers from the fire smoke when the platform fire or fire train stops.

• Journal of Nuclear Fuel Cycle and Waste Technology(JNFCWT)
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• v.17 no.1
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• pp.75-94
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• 2019

As the present single-layer repository concept requires too large an area for the site of the repository, a multi-layer repository concept has been suggested to improve the disposal density. The effects of the excavation damaged zone around the multi-layer repository constructed in the deep host rock on the temperature distribution in the repository were analyzed. For the thermal analysis of the multi-layer repository, the hydrothermal model was used to consider the resaturation process occurring in the buffer, backfill and rock. The existence of an excavation damaged zone has a significant effect on the temperature distribution in the repository, and the maximum peak temperatures of double-layer and triple-layer repositories can rise to $7^{\circ}C$ and $12^{\circ}C$, respectively depending on the size of the excavation damaged zone and the degree of decrease of the thermal conductivity. The dominant factor affecting the peak temperature in the multi-layer repository is the decrease of thermal conductivity in the excavation damaged zone, and the excavation damaged zone formed around the deposition hole has more significant effects on the peak temperature than does the excavation damaged zone formed around the disposal tunnel.

• Tunnel and Underground Space
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• v.32 no.1
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• pp.59-77
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• 2022

Currently, the design reference temperature of the buffer material for disposing of high-level radioactive waste is less than 100℃, so if the heat dissipation capacity of the buffer material is improved, the spacings of the disposal tunnel and the deposition hole in the repository can be reduced. First of all, this study tries to analyze the criteria for thermal-hydraulic-mechanical performance of the buffer materials and to investigate the researches regarding the enhanced buffer materials with improved thermal conductivity. First, the thermal conductivity should be as high as possible and is affected by dry density, water content, temperature, mineral composition, and bentonite type. the organic content of the buffer material can have a significant effect on the corrosion performance of a canister, so the organic content should be low. In addition, hydraulic conductivity of the buffer material should be less than that of near-field rock and swelling pressure should be appropriate for buffer materials to function properly. For the development of enhanced buffer materials, additives such as sand, graphite, and graphite oxide are typically used, and a thermal conductivity can be greatly improved with a very small amount of graphite addition compared to sand.

• Progress in Medical Physics
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• v.20 no.2
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• pp.72-79
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• 2009

Scatter correction for I-131 plays a very important role to improve image quality and quantitation. I-131 has multiple and higher energy gamma-ray emissions. Image quality and quantitative accuracy in I-131 imaging are degraded by object scatter as well as scatter and septal penetration in the collimator. The purpose of this study was to estimate scatter and septal penetration and investigate two scatter correction methods using Monte Carlo simulation. The gamma camera system simulated in this study was a FORTE system (Phillips, Nederland) with high energy, general-purpose, parallel hole collimator. We simulated for two types of high energy collimators. One is composed of lead, and the other is composed of artificially high Z number and high density. We simulated energy spectrum using a point source in air. We estimated both full width at half maximum (FWHM) and full width at tenth maximum (FWTM) using line spread function (LSF) in cylindrical water phantom. We applied two scatter correction methods, triple energy window scatter correction (TEW) and extended triple energy window scatter correction (ETEW). The TEW method is a pixel-by pixel based correction which is easy to implement clinically. The ETEW is a modification of the TEW which corrects for scatter by using abutted scatter rejection window, which can overestimate or the underestimate scatter. The both FWHM and FWTM were estimated as 41.2 mm and 206.5 mm for lead collimator, respectively. The FWHM and FWTM were estimated as 27.3 mm and 45.6 mm for artificially high Z and high density collimator, respectively. ETEW showed that the estimation of scatter components was close to the true scatter components. In conclusion, correction for septal penetration and scatter is important to improve image quality and quantitative accuracy in I-131 imaging. The ETEW method in scatter correction appeared to be useful in I-131 imaging.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.31-31
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• 2010

The growth of the high-quality GaN epilayers is of significant technological importance because of their commercializedoptoelectronic applications as high-brightness light-emitting diodes (LEDs) and laser diodes (LDs) in the visible and ultraviolet spectral range. The GaN-based heterostructural epilayers have the polar c-axis of the hexagonal structure perpendicular to the interfaces of the active layers. The Ga and N atoms in the c-GaN are alternatively stacked along the polar [0001] crystallographic direction, which leads to spontaneous polarization. In addition, in the InGaN/GaN MQWs, the stress applied along the same axis contributes topiezoelectric polarization, and thus the total polarization is determined as the sum of spontaneous and piezoelectric polarizations. The total polarization in the c-GaN heterolayers, which can generate internal fields and spatial separation of the electron and hole wave functions and consequently a decrease of efficiency and peak shift. One of the possible solutions to eliminate these undesirable effects is to grow GaN-based epilayers in nonpolar orientations. The polarization effects in the GaN are eliminated by growing the films along the nonpolar [$11\bar{2}0$] ($\alpha$-GaN) or [$1\bar{1}00$] (m-GaN) orientation. Although the use of the nonpolar epilayers in wurtzite structure clearly removes the polarization matters, however, it induces another problem related to the formation of a high density of planar defects. The large lattice mismatch between sapphiresubstrates and GaN layers leads to a high density of defects (dislocations and stacking faults). The dominant defects observed in the GaN epilayers with wurtzite structure are one-dimensional (1D) dislocations and two-dimensional (2D) stacking faults. In particular, the 1D threading dislocations in the c-GaN are generated from the film/substrate interface due to their large lattice and thermal coefficient mismatch. However, because the c-GaN epilayers were grown along the normal direction to the basal slip planes, the generation of basal stacking faults (BSFs) is localized on the c-plane and the generated BSFs did not propagate into the surface during the growth. Thus, the primary defects in the c-GaN epilayers are 1D threading dislocations. Occasionally, the particular planar defects such as prismatic stacking faults (PSFs) and inversion domain boundaries are observed. However, since the basal slip planes in the $\alpha$-GaN are parallel to the growth direction unlike c-GaN, the BSFs with lower formation energy can be easily formed along the growth direction, where the BSFs propagate straightly into the surface. Consequently, the lattice mismatch between film and substrate in $\alpha$-GaN epilayers is mainly relaxed through the formation of BSFs. These 2D planar defects are placed along only one direction in the cross-sectional view. Thus, the nonpolar $\alpha$-GaN films have different atomic arrangements along the two orthogonal directions ($[0001]_{GaN}$ and $[\bar{1}100]_{GaN}$ axes) on the $\alpha$-plane, which are expected to induce anisotropic biaxial strain. In this study, the anisotropic strain relaxation behaviors in the nonpolar $\alpha$-GaN epilayers grown on ($1\bar{1}02$) r-plane sapphire substrates by metalorganic chemical vapor deposition (MOCVO) were investigated, and the formation mechanism of the abnormal zigzag shape PSFs was discussed using high-resolution transmission electron microscope (HRTEM).