• 전기학회논문지
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• 제66권5호
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• pp.800-805
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• 2017

The accelerated thermal ageing of CSPE (chlorosulfonated polyethylene) was carried out for 16.82, 50.45, and 84.09 days at $110^{\circ}C$, equivalent to 20, 60, and 100 years of ageing at $50^{\circ}C$ in nuclear power plants, respectively. As the accelerated thermally aged years increase, the insulation resistance and resistivity of the CSPE decrease, and the capacitance, relative permittivity and dissipation factor of those increase at the measured frequency, respectively. As the accelerated thermally aged years and the measured frequency increase, the phase degree of response voltage vs excitation voltage of the CSPE increase but the phase degree of response current vs excitation voltage decrease, respectively. As the accelerated thermally aged years increase, the apparent density, glass transition temperature and the melting temperature of the CSPE increase but the percent elongation and % crystallinity decrease, respectively. The differential temperatures of those are $0.013-0.037^{\circ}C$ and, $0.034-0.061^{\circ}C$ after the AC and DC voltages are applied to CSPE-0y and CSPE-20y, respectively; the differential temperatures of those are $0.011-0.038^{\circ}C$ and $0.002-0.028^{\circ}C$ after the AC and DC voltages are applied to CSPE-60y and CSPE-100y, respectively. The variations in temperature for the AC voltage are higher than those for the DC voltage when an AC voltage is applied to CSPE. It is found that the dielectric loss owing to the dissipation factor($tan{\delta}$) is related to the electric dipole conduction current. It is ascertained that the ionic (electron or hole) leakage current is increased by the partial separation of the branch chain of CSPE polymer as a result of thermal stress due to accelerated thermal ageing.

• Journal of Korean Neurosurgical Society
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• 제37권4호
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• pp.282-286
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• 2005

Objective: Symptomatic chronic subdural hematoma(CSDH) is a well-known neurosurgical entity and most of the lesion is managed by surgical treatment. The authors analyze the surgical indication and the treatment results of twist drill craniostomy with closed-system drainage(TDD) for the symptomatic CSDH. Methods: From March 2001 through December 2003, 31 patients who were treated with TDD for the symptomatic CSDH and followed more than 6months were included. The radiologic criteria of TDD in this study were 1) homogeneous density of hematoma on computed tomography(CT), 2) no septation of hematoma on magnetic resonance imaging(MRI), and 3) thicker hematoma more than twice thickness of skull. Surgical procedures were performed on the maximum thickness of hematoma on CT/MRI. Short and long Steinman pins were used to penetrate the skull and hematoma membrane. As the 5L catheter was inserted through the drill hole, it was kept for 1 - 7days for the drainage of CSDH. The patients of CSDH were followed with clinical symptoms and CT studies. Results: Most of all the 31 patients were improved. However, one patient was suffered from postoperative epidural hematoma and the other patients have received the secondary operation because of the recurrence of CSDH on 3 months after initial surgery. Conclusion: TDD is safe procedure for the symptomatic CSDH if the patients are selected appropriately.

• E2M - 전기 전자와 첨단 소재
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• 제9권8호
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• pp.789-798
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• 1996

The double nitride layer Metal Nitride Oxide Semiconductor(MNOS) structures were fabricated by variating both gas ratio and nitride thickness, and by duplicating nitride deposited and one nitride layer MNOS structure to improve nonvolatile memory characteristics of MNOS structures by Low Pressure Chemical Vapor Deposition(LPCVD) method. The nonvolatile memory characteristics of write-in, erase, memory retention and degradation of Bias Temperature Stress(BTS) were investigated by the homemade automatic .DELTA. $V_{FB}$ measuring system. In the trap density double nitride layer structures were higher by 0.85*10$^{16}$ $m^{-2}$ than one nitride layer structure, and the AVFB with oxide field was linearly increased. However, one nitride layer structure was linearly increased and saturated above 9.07*10$^{8}$ V/m in oxide field. In the erase behavior, the hole injection from silicon instead of the trapped electron emission was observed, and also it was highly dependent upon the pulse amplitude and the pulse width. In the memory retentivity, double nitrite layer structures were superior to one nitride layer structure, and the decay rate of the trapped electron with increasing temperature was low. At increasing the number on BTS, the variance of AVFB of the double nitride layer structures was smaller than that of one nitride layer structure, and the trapped electron retention rate was high. In this paper, the double nitride layer structures were turned out to be useful in improving the nonvolatile memory characteristics.

• Weed & Turfgrass Science
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• 제6권4호
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• pp.355-358
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• 2017

Amur silver grass, Miscanthus sacchariflorus is one of the promising biofuel weeds. A damage of noctuid pest, Leucapamea askoldis was firstly observed from Amur silver grass in Hwasun silver grass plantation during the survey of insect pests of Amur silver grass in Iksan, Hwasun, and Sancheong plantation areas in Korea. The host of L. askoldis was not known yet in Korea. The L. askoldis damage was observed as larval feeding on newly grown shoots and roots of M. sacchariflorus close to soil surface from early May in 2013. Investigated larval density was $1.6{\pm}1.1per\;m^2$ on April 4 and damage rate of shoots was $0.8{\pm}0.4%$ on May 4, 2013. The larvae bore into shoots of M. sacchariflorus and feed on the inside of plant. The damaged shoots are easily pulled out and distinguished by the boring hole on the shoots. L. askoldis was potential insect pest in M. sacchariflorus plantation areas.

• 대한전자공학회논문지
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• 제25권11호
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• pp.1294-1303
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• 1988

광 유도 전류 천이 (photo-induced current transient)방법으로 측정한 SI GaAs의 전자와 정공 trap이 갖을 수 있는 activation energy({\Delta}E_r)의 범위는 0.16$\pm$ 0.01eV에서 0.98$\pm$ 0.01eV까지 분포되어 있다. SI Undoped GaAs가 SI GaAs : Cr 보다 깊은 준위의 수가 적음을 확인 하였다. Trap의 열적인 capture cross section과 농도를 평가 하였고, 약간의 trap은 SI GaAs 성장시에 발생될 수 있는 결함과 관련되어 있음을 확인하였다. 특히 SI GaAs에서 보상 level로 작용하는 Cr과 “0” level를 좀 더 정확하게 측정하기 위하여 서로 다른 측정방법을 사용하여 측정한 결과를 각기 비교 검토 하였다. 즉, PICT측정, 상온 이상의 온도에서 측정한 Hall data 및 광전류 spectra data 등을 비교 검토 하였으며, 보상 level은 격자 결합이 매우 약함을 확인할 수 있었다. Hall data를 computer로 분석한 결과 중성 불순물 scattering이 측정 온도 범위에서 매우 중요한 역할을 하고 있음을 알 수 있었다.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.II
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• pp.1343-1346
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• 2005

Self assembled monolayers (SAM) are generally used at the anode/organic interface to enhance the carrier injection in organic light emitting devices, which improves the electroluminescence performance of organic devices. This paper reports the use of SAM of 1-decanethiol (H-S(CH2)9CH3) at the cathode/organic interface to enhance the electron injection process for organic light emitting devices. Aluminum (Al), tris-(8-hydroxyquionoline) aluminum (Alq3), N,N'-diphenyl-N,N'-bis(3 -methylphenyl)-1,1'- diphenyl-4,4'-diamine (TPD) and indium-tin-oxide (ITO) were used as bottom cathode, an emitting layer (EML), a hole-transporting layer (HTL) and a top anode, respectively. The results of the capacitancevoltage (C-V), current density -voltage (J-V) and brightness-voltage (B-V), luminance and quantum efficiency measurements show a considerable improvement of the device performance. The dipole moment associated with the SAM layer decreases the electron schottky barrier between the Al and the organic interface, which enhances the electron injection into the organic layer from Al cathode and a considerable improvement of the device performance is observed. The turn-on voltage of the fabricated device with SAM layer was reduced by 6V, the brightness of the device was increased by 5 times and the external quantum efficiency is increased by 0.051%.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1998년도 하계학술대회 논문집 D
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• pp.1373-1376
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• 1998

Electroluminescent(EL) devices based on organic materials have been of great interest due to their possible applications for large-area flat-panel displays. They are attractive because of their capability of multicolor emission, and low operation voltage. In this study, glass substrate/ITO/TPD/$Eu(TTA)_3(phen)/Alq_3/Al$ structures were fabricated by evaporation method, where aromatic diamine(TPD) were used as a hole transporting material, $Eu(TTA)_3(phen)$ as an emitting material, and tris(8-hydroxyquinoline)Aluminum ($Alq_3$) as an electron transporting layer. Electroluminescent(EL) and I-V characteristics of $Eu(TTA)_3(phen)$ with a variety thickness was investigated. This structure shows the red EL spectrum, which is almost the same as the PL spectrum of $Eu(TTA)_3(phen)$. I-V characteristics of this structure show that turn-on voltage was 9V and current density of $0.01A/cm^2$ at a dc drive voltage of 9V. Details on the explanation of electrical transport phenomena of these structures with I-V characteristics using the trapped-charge-limited current model will be discussed.

• 한국세라믹학회지
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• 제47권6호
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• pp.498-502
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• 2010

Aluminium titanate($Al_2TiO_5$) has extremely anisotropic thermal expansion properties in single crystals, and polycrystalline material spontaneously microcracks in the cooling step after sintering process. These fine intergranular cracks limit the strength of the material, but provide an effective mechanism for absorbing strain energy during thermal shock and preventing catastrophic crack propagation. Furthermore, since machinable BN-ceramics used as an insulating substrate in current micro-electronic industry are very expensive, the development of new low-cost machinable substrate ceramics are consistently required. Therefore, cheap $Al_2TiO_5$-machinable ceramics was studied for the replacement of BN ceramics. $Al_2O_3-Al_2TiO_5$ ceramic composite was fabricated via in-situ reaction sintering. $Al_2O_3$ and $TiO_2$ powders were mixed with various mol-ratio and sintered at 1400 to $1600^{\circ}C$ for 1 h. Density, hardness and strength of sintered ceramics were systematically measured. Phase analysis and microstructures were observed by XRD and SEM, respectively. Machinability of each specimens was tested by micro-hole machining. The results of research showed that the $Al_2TiO_5$-composites could be used for low-cost machinable ceramics.

• 방송공학회논문지
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• 제18권4호
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• pp.559-571
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• 2013

2차원 비디오를 3차원 스테레오 비디오로 변환할 때 기존 비디오에 삽입되어 있는 오버레이 텍스트(overlay text) 그래픽 영역으로 인해 발생하는 문제점을 이 논문에서 제시한다. 이를 해결하기 위한 방법으로 2차원 비디오를 오버레이 텍스트 그래픽 영역만 있는 영상과 오버레이 그래픽 영역이 추출되어 홀(hole)이 있는 영상으로 분리하여 처리하는 시나리오를 제안한다. 그리고 이 시나리오의 첫 번째 단계로 오버레이 텍스트 영역을 검색하고 추출하는 방법에 대해서만 이 논문에서 논한다. 비디오 시퀀스(sequence)가 입력되면 불필요한 연산 과정을 줄이기 위해 해리스 코너(Harris corner)로 얻어진 코너 밀도 맵을 이용하여 프레임 내 오버레이 텍스트의 존재 유무를 먼저 판단한다. 오버레이 텍스트가 있다면, 색(color) 정보와 움직임(motion) 정보를 결합하여 오버레이 텍스트 그래픽 영역을 검색하고 추출한다. 실험에서는 여러 가지 장르의 방송용 비디오에 대한 처리 결과를 보여주고 분석했다.

• Composites Research
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• 제29권4호
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• pp.179-185
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• 2016

A self-charging supercapacitor is constructed through simple integration of the energy storage and photo exited materials at the photo electrode. The large band gap of $NiO/Fe_3O_4$ heterostructure generates photo electron at the photo electrode and store the charges through redox mechanism at the counter electrode. Sulfanilic acid azocromotrop/reduced graphene oxide layer at the photo electrode trapped the photo generated hole and store the charge by forming double layer. The solar supercapacitor device is charged within 400 s up to 0.5 V and exhibited a high specific capacitance of ~908 F/g against 1.5 A/g load. The solar illuminated supercapacitor shows a high energy and power density of 33.4 Wh/kg and 385 W/kg along with a very low relaxation time of ~15 ms ensuring the utility of the self charging device in the various field of energy storage and optoelectronic application.