• Journal of the Microelectronics and Packaging Society
• /
• v.14 no.3
• /
• pp.29-36
• /
• 2007

The main objectives of this study are to investigate the micro-scale energy transfer mechanism for silicon wafer and to find an efficient way for fabrication of silicon wafer through-hole by using the femtosecond pulse laser ablation. In addition, the electron-phonon interactions during laser irradiation are discussed and the carrier number density and temperatures are estimated. In particular, the present study observes the shapes of silicon wafer through-hole with $100\;{\mu}m$ diameter and it also measures the heat-affected area and the ablation depths fur different laser fluences by using the optic microscope and the three-dimensional profile measurement technique. First, from numerical investigation, it is found that the nonequilibrium state exists between electrons and phonons during laser irradiation. From experimental results, it should be noted that the heat-affected area increases with laser fluence, and the optimal conditions for through-hole formation with minimum heat affected zone are finally obtained.

• Korean Chemical Engineering Research
• /
• v.47 no.4
• /
• pp.418-423
• /
• 2009

MWCNT(multi-wall carbon nanotube)-doped PEDOT:PSS(poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate)), used as a HIL(hole injection layer) material in OLEDs(organic light emitting diodes), was spin-coated on to the ITO glass to form PEDOT:PSS-MWCNT nano composite thin film. Morphology and transparency characteristics of nano composite thin films with respect to the loading percent of MWCNT have been investigated using FT-IR, UV-Vis and SEM. Furthermore, ITO/PEDOT:PSS-MWCNT/NPD/$Alq_3$/Al devices were fabricated, and then J-V and L-V characteristics were investigated. Functional group-incorporated MWCNT was prepared by acid treatment and showed good dispersion property in PEDOT:PSS solution. PEDOT:PSS-MWCNT thin films possessed good transparency property. For multi-layered devices, it was shown that as the loading percent of MWCNT increased, the current density increased but the luminance dramatically decreased. It might be conclusively suggested that the enhanced charge mobility by MWCNT could increase the current density but the hole trapping property of MWCNT could dramatically decrease the hole mobility in the current devices.

• Korean Journal of Medicinal Crop Science
• /
• v.22 no.6
• /
• pp.469-474
• /
• 2014

This study was performed to investigate the effects of sowing density and number of seeds sown on the emergence rate and growth characters of Panax ginseng C. A. Meyer under direct sowing cultivation in a blue plastic greenhouse. Ginseng seedlings, derived from seeds sown directly at different densities (90, 108, 135, and 162 seeds per $162m^2$), were cultivated in sandy loam soil within a blue plastic greenhouse. In contrast to the emergence rate, which decreased with an increase of sowing density, number of survival plant showed an increasing trend. Interestingly, the emergence and number of survival plant were significantly enhanced when 2 or 3 seeds were sown per hole compared with when one seed was sown per hole. Growth of the aerial parts of ginseng were not markedly influenced by sowing density or the number of seeds sown. However, chlorophyll content (SPAD values) increased with an increase in sowing density. Root parameters, such as root length, diameter, and weight, and the number of lateral roots decreased with an increase in sowing density, but were not noticeably influenced by the number of seeds sown. Total saponin content was the highest in the treatment plot containing 135 seeds. Similarly, the content of each ginsenoside was also tended to be higher in this treatment than in other treatment plots. On the basis of the results obtained in this study, it was possible to determine the optimal sowing density and seed number for the direct sowing cultivation of ginseng in blue plastic greenhouse.

• Proceedings of the Materials Research Society of Korea Conference
• /
• 2003.03a
• /
• pp.101-101
• /
• 2003

Al 박막의 화학증착(CVD)과 Al-Cu 합금박막의 물리증착(PVD)을 조합하는 CVD-PVD Al 공정은 수평방향의 배선과 수직방향의 via를 동시에 형성할 수 있으므로 공정단순화 및 생산원가절감 측면에서 장점이 있어서 DRAM 둥의 반도체 소자의 배선공정으로 매우 유망하다[1]. 본 연구에서는 CVD-PVD Al 공정을 이용하여 초고집적소자의 Al via와 Al 배선을 동시에 형성할 때 층간절연막의 영향을 조사하고 그 원인을 규명하였다. Al CVD를 위한 원료기체로는 dimethylaluminum hydride [($CH_3$)$_2$AlH]를 사용하였고 PVD는 38$0^{\circ}C$에서 실시하였다 층간절연막에 따른 CVD-PVD Al의 via hole 매립특성을 조사한 결과, high-density plasma(HDP) CVD oxide의 경우에는 via hole 매립특성이 우수하였으나, hydrogen silscsquioxane (HSQ)의 경우에는 매립특성이 우수하지 않아서 via 저항이 불균일 하였다. 이는 via 식각 후 wet cleaning 과정에서 HSQ에 흡수된 수분이 lamp를 이용한 degassing 공정에 의해서 완전히 제거되지 않아 CVD-PVD 공정 중에 탈착되어 Al reflow에 나쁜 영향을 미치기 때문으로 판단된다. CVD-PVD 공정 전에 40$0^{\circ}C$, $N_2$ 분위기에서 baking하여 HSQ 내의 수분을 충분히 제거함으로써 via 매립특성을 향상시킬 수 있었다. CVD-PVD Al 공정은 aspect ratio 10:1 이상의 via hole도 완벽하게 매립할 수 있었고 이에의해 제조된 Al 배선은 기존의 W plug 공정에 의해 제조된 배선에 비해 낮은 via 저항을 나타내었다.

• Journal of Welding and Joining
• /
• v.32 no.3
• /
• pp.11-18
• /
• 2014

TSV(through silicon via) filling technology is making a hole in Si wafer and electrically connecting technique between front and back of Si die by filling with conductive metal. This technology allows that a three-dimensionally connected Si die can make without a large number of wire-bonding. These TSV technologies require various engineering skills such as forming a via hole, forming a functional thin film, filling a conductive metal, polishing a wafer, chip stacking and TSV reliability analysis. This paper addresses the TSV filling using Cu electrodeposition. The impact of plating conditions with additives and current density on electrodeposition will be considered. There are additives such as accelerator, inhibitor, leveler, etc. suitably controlling the amount of the additive is important. Also, in order to fill conductive material in whole TSV hole, current wave forms such as PR(pulse reverse), PPR(periodic pulse reverse) are used. This study about semiconductor packaging will be able to contribute to the commercialization of 3D TSV technology.

• Tunnel and Underground Space
• /
• v.19 no.4
• /
• pp.366-372
• /
• 2009

Recently, in order to achieve smooth fracture plane and minimize the excavation damage zone in rock blasting, controlled blasting methods which utilize new technologies such as electronic delay detonator (EDD) and a notched charge hole have been suggested. In this study, smooth blastings utilizing three wing type notched charge holes are simulated to investigate the influence of explosive initial density on the resultant fracture plane and damage zone using dynamic fracture process analysis (DFPA) code. Finally, based on the dynamic fracture process analyses, novel smooth blasting method, ED-Notch SB (Electronic Detonator Notched Charge Hole Smooth Blasting) is suggested.

• Transactions on Electrical and Electronic Materials
• /
• v.8 no.6
• /
• pp.250-254
• /
• 2007

Applying the moving photo-carrier grating(MPG) technique and time-of-flight(TOF) measurements, we studied the transport properties of stabilized amorphous selenium typical of the material used in direct conversion X-ray imaging devices. For MPG measurement, we obtained electron and hole mobility and the recombination lifetime of $\alpha-Se$ films with arsenic(As) additions. We found an apparent increase in hole drift mobility and recombination lifetime, especially when 0.3 % As was added into $\alpha-Se$ film, whereas electron mobility decreased with the addition of As due to the defect density. For TOF measurement, a laser beam with pulse duration of 5 ns and wavelength of 350 nm was illuminated on the surface of $\alpha-Se$ with a thickness of 400 ${\mu}m$. The measured hole and electron transit times were about 8.73 ${\mu}s$ and 229.17 ${\mu}s$, respectively.

• Corrosion Science and Technology
• /
• v.16 no.6
• /
• pp.294-297
• /
• 2017

For the longer service life of steel pile, cathodic protection is selected sometimes at corrosive environment. The cathodic protection design improvement was investigated in this study. The current demand for cathodic protection was calculated from the potentiostatic current monitoring of the steel specimen in the deaerated soil samples. In this study, the current distribution was studied using the Boundary Element Method (BEM) and the Finite Element Method (FEM) numerical analysis methods. The optimum layout of the anode was developed and confirmed by numerical analysis. Under the conventional design of the anode, the length of the anode hole is same as the pile length. We found that, at the bottom end of the pile, the current density is too high. When the anode hole length was 80% of the pile length, the current consumption at the end was reduced. The construction cost of anode hole drilling was decreased about 20%, as compared to the conventional design. Furthermore, the life of the anode materials could be extended by reducing the current consumption at the end section. Using this approach, the construction cost was reduced significantly without any under-protection area on the steel piles.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.11 no.4
• /
• pp.267-273
• /
• 1998

The band structures of $Si_{1-x}Ge_x$ layers grown on $Si_{1-y}Ge_y$ substrate are calculated using k$\cdot$p and strain Hamiltonians. The hole drift mobilities in the plane direction are then calculated by taking into account the screening effect and the density-of-states of the impurity band. When $Si_{1-x}Ge_x$ is grown on Si substrate, the mobilities of (110) and (111) $Si_{1-x}Ge_x$ layers are larger than that of (001) $Si_{1-x}Ge_x$. However, due to the large defect and surface scattering, (110) and (111) $Si_{1-x}Ge_x$ layers may not be useful for the development of the fast device. Meanwhile, when Si is grown on $Si_{1-y}Ge_y$ substrate, the mobilities of (001) and (110) Si layers are greatly enhanced. Based on the amount of defect and the surface scattering, it is expected that Si grown on (001) $Si_{1-y}Ge_y$ substrate, where the Ge contents is larger than 10%(y>0.1), has the highest mobility.

• Geomechanics and Engineering
• /
• v.21 no.3
• /
• pp.289-300
• /
• 2020

Estimating the damage induced by an explosion around a blast hole has always been a challenging issue in geotechnical engineering. It is difficult to determine an exact dimension for damage zone since many parameters are involved in the formation of failures, and there are some uncertainties lying in these parameters. Thus, the present study adopted a probabilistic approach towards this problem. First, a reliability model of the problem was established and the failure probability of induced damage was calculated. Then, the corresponding exceedance risk curve was developed indicating the relation between the failure probability and the cracked zone radius. The obtained risk curve indicated that the failure probability drops dramatically by increasing the cracked zone radius so that the probability of exceedance for any crack length greater than 4.5 m is less than 5%. Moreover, the effect of each parameter involved in the probability of failure, including blast hole radius, explosive density, detonation velocity, and tensile strength of the rock, was evaluated by using a sensitivity analysis. Finally, the impact of the decoupling ratio on the reduction of failures was investigated and the location of its maximum influence was demonstrated around the blast point.