• Korean Journal of Materials Research
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• v.3 no.4
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• pp.352-360
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• 1993

A nitride layer was df'posited on the thermal oxide layer by LPCVD process. ONO(oxidenitricle oxide) capacitors with various thickness of component layer wore fabricated by wet reoxidation of the nitride with and without anrwalmg treatment and their properties were investigated. As a result of observation on the refrative index and etching behavior of the ONO fIlms, the nitride layer OF 40 A thick ness was not so dense that the bottom oxide during the reoxidation process and the capability of securing the capacitance decreased. The conduction current in the ONO multl-Iayer dielctric film was reduced as the bottom(or top) oxide layer became thicker. However, in the case of oxide with thickness more than 50A, it merely plays a factor of reduction in capacitance, and the effect of barrier for hole injection was not so much increased. Annealing of the nitride laypr bpfore reoxidation did not show a grpat effects on the refractive index and capacitance of the film, however, the annealing process increased the breakdown voltage by 2${\cdot}$V.

• Geomechanics and Engineering
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• v.18 no.4
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• pp.449-457
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• 2019

Physical model tests were first performed to investigate the failure pattern of multiple pillar-roof support system. It was observed in the physical model tests, pillars were design with the same mechanical parameters in model #1, cracking occurred simultaneously in panel pillars and the roof above barrier pillars. When pillars 2 to 5 lost bearing capacity, collapse of the roof supported by those pillars occurred. Physical model #2 was design with a relatively weaker pillar (pillar 3) among six pillars. It was found that the whole pillar-roof system was divided into two independent systems by a roof crack, and two pillars collapse and roof subsidence events occurred during the loading process, the first failure event was induced by the pillars failure, and the second was caused by the roof crack. Then, for a multiple pillar-roof support system, three types of failure patterns were analysed based on the condition of pillar and roof. It can be concluded that any failure of a bearing component would cause a subsidence event. However, the barrier pillar could bear the transferred load during the stress redistribution process, mitigating the propagation of collapse or cutting the roof to insulate the collapse area. Importantly, some effective methods were suggested to decrease the risk of catastrophic collapse, and the deep-hole-blasting was employed to improve the stability of the pillar and roof support system in a room and pillar mine.

• Journal of the Microelectronics and Packaging Society
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• v.13 no.4
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• pp.45-50
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• 2006

Copper via filling is the important factor in 3-D stacking interconnection of SiP (system in package). As the packaging density is getting higher, the size of via is getting smaller. When DC electroplating is applied, a defect-free hole cannot be obtained in a small size via hole. To prevent the defects in holes, pulse and pulse reverse current was applied in copper via filling. The holes, $20\and\;50{\mu}m$ in diameter and $100{\sim}190\;{\mu}m$ in height. The holes were prepared by DRIE method. Ta was sputtered for copper diffusion barrier followed by copper seed layer IMP sputtering. Via specimen were filled by DC, pulse and pulse-reverse current electroplating methods. The effects of additives and current types on copper deposits were investigated. Vertical and horizontal cross section of via were observed by SEM to find the defects in via. When pulse-reverse electroplating method was used, defect free via were successfully obtained.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.32 no.5
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• pp.393-398
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• 2019

A poly[bis(4-butypheny)-bis(phenyl)benzidine] (poly-TPD) and poly(9-vinylcarbazole) (PVK) bilayer was employed as a hole transport layer (HTL) in solution-processed CdSe/ZnS quantum dot light-emitting diodes (QLEDs). The thickness of the PVK layer spin-coated onto the poly-TPD layer, whose thickness was fixed to 40 nm, was varied, with PVK layer thicknesses of 0 nm, 35 nm, 45 nm, and 55 nm. Because the thickness of the PVK can determine the hole transport properties of the HTL, a PVK thickness that maximizes the performance of the HTL for the QLEDs was investigated. By employing the optimized PVK thickness of 45 nm, the current efficiency of the QLED exhibited a 1.74 times improvement when compared with that of the QLED with poly-TPD based HTL without PVK. This was mainly attributed to the decrease in the energy barrier between the HTL and the quantum dot (QD) emitting layer (EML).

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.111.2-111.2
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• 2015

Typical electrodes (metal or indium tin oxide (ITO)), which were used in conventional organic light emitting devices (OLEDs) structure, have transparency and conductivity, but, it is not suitable as the electrode of the flexible OLEDs (f-OLEDs) due to its brittle property. Although Graphene is the most well-known alternative material for conventional electrode because of present electrode properties as well as flexibility, its carrier injection barrier is comparatively high to use as electrode. In this work, we performed plasma treatment on the graphene surface and alkali metal doping in the organic materials to study for its possibility as anode and cathode, respectively. By using Ultraviolet Photoemission Spectroscopy (UPS), we investigated the interfaces of modified graphene. The plasma treatment is generated by various gas types such as O2 and Ar, to increase the work function of the graphene film. Also, for co-deposition of organic film to do alkali metal doping, we used three different organic materials which are BMPYPB (1,3-Bis(3,5-di-pyrid-3-yl-phenyl)benzene), TMPYPB (1,3,5-Tri[(3-pyridyl)-phen-3-yl]benzene), and 3TPYMB (Tris(2,4,6-trimethyl-3-(pyridin-3-yl)phenyl)borane)). They are well known for ETL materials in OLEDs. From these results, we found that graphene work function can be tuned to overcome the weakness of graphene induced carrier injection barrier, when the interface was treated with plasma (alkali metal) through the value of hole (electron) injection barrier is reduced about 1 eV.

• Journal of the Korean Vacuum Society
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• v.17 no.2
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• pp.109-112
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• 2008

The miniaturization of device size and submicron process causes serious problems in conventional metallization due to the solubility of silicon and metal at the interface, such as an increasing contact resistance in the contact hole and interdiffusion between metal and silicon. Moreover, the interaction between Cu and Si is so strong and detrimental to the electrical performance of Si even at temperatures below $200^{\circ}C$. Therefore it is necessary to implement a barrier layer between Cu and Si. So we study W-C-N diffusion barrier for prevent Cu diffusion as a function of $N_2$ gas flow and thermal stability. Especially, we also study the W-C-N diffusion barrier for analyzing the change of lattice constants.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.12 no.6
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• pp.269-269
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• 2002

ZnTe/ZnMnTe single quantum well of high quality was grown by hot-wall epitaxy, in which ZnMnTe layer was used as a barrier. It was found that ZnTe well layer was under severe strain. Very sharp luminescent peaks of the heavy-hole exciton (el-hhl) and the light-hole exciton (el-lhl) were observed from the photoluminescence (PL) measurement. As the well layer thickness increases, the peaks associated with excitons of (el-hhl) and (el-lhl) were shifted toward the lower energy side. The temperature dependence of the PL peak intensity was well explained by the thermal activation theory.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.12 no.6
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• pp.267-271
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• 2002

ZnTe/ZnMnTe single quantum well of high quality was grown by hot-wall epitaxy, in which ZnMnTe layer was used as a barrier. It was found that ZnTe well layer was under severe strain. Very sharp luminescent peaks of the heavy-hole exciton (el-hhl) and the light-hole exciton (el-lhl) were observed from the photoluminescence (PL) measurement. As the well layer thickness increases, the peaks associated with excitons of (el-hhl) and (el-lhl) were shifted toward the lower energy side. The temperature dependence of the PL peak intensity was well explained by the thermal activation theory.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.963-965
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• 2003

We have synthesized new hole transport materials(HTMs). Then we have fabricated structures of ITO/new HTM/$Alq_{3}$/EIL/Al. New HTM based devices have higher current density and lower turn-on voltage than TPD based devices. New HTMs have higher HOMO level than TPD. The new HTM based OLEDs have shown better current injection than the TPD based OLEDs, due to the lower injection barrier between ITO surface and HTM.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.1003-1006
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• 2003

We have investigated the effect of hole-injection buffer layer and cathodes in organic light-emitting diodes u sing poly (3,4-ethylenedioxythiophene) : poly (stylenesulfonate) (PEDOT: PSS) in a device structure of $ITO/PEDOT:PSS/TPD/Alq_3/Cathode$. Polymer PEDOT:PSS buffer layer was made using spin casting method. Current-voltage, luminance-voltage characteristics and efficiency of device were measured at room temperature with a variation of cathode materials. The device with LiF/Al cathode shows an improvement of external quantum efficiency approximately by a factor of ten compared to that of Al cathode only device. Our observation shows that the energy barrier-height in cathode side is important in improving the efficiency of the organic light-emitting diodes.