• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2010.06a
• /
• pp.31-31
• /
• 2010

The growth of the high-quality GaN epilayers is of significant technological importance because of their commercializedoptoelectronic applications as high-brightness light-emitting diodes (LEDs) and laser diodes (LDs) in the visible and ultraviolet spectral range. The GaN-based heterostructural epilayers have the polar c-axis of the hexagonal structure perpendicular to the interfaces of the active layers. The Ga and N atoms in the c-GaN are alternatively stacked along the polar [0001] crystallographic direction, which leads to spontaneous polarization. In addition, in the InGaN/GaN MQWs, the stress applied along the same axis contributes topiezoelectric polarization, and thus the total polarization is determined as the sum of spontaneous and piezoelectric polarizations. The total polarization in the c-GaN heterolayers, which can generate internal fields and spatial separation of the electron and hole wave functions and consequently a decrease of efficiency and peak shift. One of the possible solutions to eliminate these undesirable effects is to grow GaN-based epilayers in nonpolar orientations. The polarization effects in the GaN are eliminated by growing the films along the nonpolar [$11\bar{2}0$] ($\alpha$-GaN) or [$1\bar{1}00$] (m-GaN) orientation. Although the use of the nonpolar epilayers in wurtzite structure clearly removes the polarization matters, however, it induces another problem related to the formation of a high density of planar defects. The large lattice mismatch between sapphiresubstrates and GaN layers leads to a high density of defects (dislocations and stacking faults). The dominant defects observed in the GaN epilayers with wurtzite structure are one-dimensional (1D) dislocations and two-dimensional (2D) stacking faults. In particular, the 1D threading dislocations in the c-GaN are generated from the film/substrate interface due to their large lattice and thermal coefficient mismatch. However, because the c-GaN epilayers were grown along the normal direction to the basal slip planes, the generation of basal stacking faults (BSFs) is localized on the c-plane and the generated BSFs did not propagate into the surface during the growth. Thus, the primary defects in the c-GaN epilayers are 1D threading dislocations. Occasionally, the particular planar defects such as prismatic stacking faults (PSFs) and inversion domain boundaries are observed. However, since the basal slip planes in the $\alpha$-GaN are parallel to the growth direction unlike c-GaN, the BSFs with lower formation energy can be easily formed along the growth direction, where the BSFs propagate straightly into the surface. Consequently, the lattice mismatch between film and substrate in $\alpha$-GaN epilayers is mainly relaxed through the formation of BSFs. These 2D planar defects are placed along only one direction in the cross-sectional view. Thus, the nonpolar $\alpha$-GaN films have different atomic arrangements along the two orthogonal directions ($[0001]_{GaN}$ and $[\bar{1}100]_{GaN}$ axes) on the $\alpha$-plane, which are expected to induce anisotropic biaxial strain. In this study, the anisotropic strain relaxation behaviors in the nonpolar $\alpha$-GaN epilayers grown on ($1\bar{1}02$) r-plane sapphire substrates by metalorganic chemical vapor deposition (MOCVO) were investigated, and the formation mechanism of the abnormal zigzag shape PSFs was discussed using high-resolution transmission electron microscope (HRTEM).

• KSCE Journal of Civil and Environmental Engineering Research
• /
• v.31 no.3A
• /
• pp.235-249
• /
• 2011

A new form of I-type PSC bridge girder, which has hole in the web, is proposed in this paper. Three different concepts were combined and implemented in the design. First of all, a girder was precast at a manufacturing plant as divided pieces and assembled at the construction site using post-tensioning method, and the construction period at the site will be reduced dramatically. In this way, the quality of concrete can be assured at the manufacturing factory and concrete curing can be well controlled, and the spliced girder segments can be moved to the construction site without a transportation problem. Secondly, a numerous number of holes was made in the web of the girder. This reduces the self-weight of the girder. But more important thing related to the holes is that about half of the total anchorages can be moved from the girder ends into individual holes. The magnitude of negative moment developed at girder ends will be reduced. Also, since the longitudinal compressive stresses are reduced at ends, thick end diaphragm is not necessary. Thirdly, Prestressing force was introduced into the member through multiple stages. This concept of multi-stage prestressing method overcomes the prestressing force limit restrained by the allowable stresses at each loading stage, and maximizes the magnitude of applicable prestressing force. It makes the girder longer and shallower. Two 50 meter long full scale girders were fabricated and tested. One of them was non-spliced, or monolithic girder, made as one piece from the beginning, and the other one was assembled using post-tensioning method from five pieces of segments. It was found from the result that monolithic and spliced girder show similar load-deflection relationships and crack patterns. Girders satisfied specific girder design specification in flexural strength, deflection, and live load deflection control limit. Both spliced and monolithic holed web post-tensioned girders can be used to achieve span lengths of more than 50m with the girder height of 2 m.

• Journal of Radiation Protection and Research
• /
• v.40 no.1
• /
• pp.1-9
• /
• 2015

Compton cameras overcome several limitations of conventional mechanical collimation based gamma imaging devices, such as pin-hole imaging devices, due to its electronic collimation based on coincidence logic. Especially large-scale Compton camera has wide field of view and high imaging sensitivity. Those merits suggest that a large-scale Compton camera might be applicable to monitoring nuclear materials in large facilities without necessity of portability. To that end, our research group have made an effort to design a large-scale Compton camera for safeguard application. Energy resolution or position resolution of large-area detectors vary with configuration style of the detectors. Those performances directly affect the image quality of the large-scale Compton camera. In the present study, a series of Geant4 Monte Carlo simulations were performed in order to examine the effect of those detector parameters. Performance of the designed large-scale Compton camera was also estimated for various monitoring condition with realistic modeling. The conclusion of the present study indicates that the energy resolution of the component detector is the limiting factor of imaging resolution rather than the position resolution. Also, the designed large-scale Compton camera provides the 16.3 cm image resolution in full width at half maximum (angular resolution: $9.26^{\circ}$) for the depleted uranium source considered in this study located at the 1 m from the system when the component detectors have 10% energy resolution and 7 mm position resolution.

• The Korean Journal of Nuclear Medicine
• /
• v.38 no.6
• /
• pp.528-531
• /
• 2004

Purpose: PET has some disadvantage in the imaging of small animal due to poor resolution. With the advent of microPET scanner, it is possible to image small animals. However, the image quality was not good enough as human image. Due to larger brain, cat brain imaging was superior to mouse or rat. In this study, we established the cat brain infarction model and evaluate it and its temporal charge using microPET scanner. Materials and Methods: Two adult male cats were used. Anesthesia was done with xylazine and ketamine HCl. A burr hole was made at 1cm right lateral to the bregma. Collagenase type IV 10 ${\mu}l$ was injected using 30 G needle for 5 minutes to establish the infarction model. $^{18}F$-FDG microPET (Concorde Microsystems Inc., Knoxville, TN) scans were performed 1, 11 and 32 days after the infarction. In addition, $^{18}F$-FDG PET scans were performed using human PET scanner (Gemini, Philips medical systems, CA, USA) 13 and 47 days after the infarction. Results: Two cat brain infarction models were established. The glucose metabolism of an infarction lesion improved with time. An infarction lesion was also distinguishable in the human PET scan. Conclusion: We successfully established the cat brain infarction model and evaluated the infarcted lesion and its temporal change using $^{18}F$-FDG microPET scanner.