• Bulletin of the Korean Chemical Society
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• v.18 no.7
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• pp.730-733
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• 1997

Monofluoroiron(Ⅲ) tetraphenylporphyrin, Fe(TPP)F, and difluoroiron(Ⅲ) tetraphenylporphyrin, [Fe(TPP)F2]- were generated in a various non-aqueous solvents by the reaction between Fe(TPP)Cl and tetrabutylammonium fluoride TBAF 3H2O. Formation of the these complexes was detected by the appearance of the ν(F-Fe) (ν, stretching vibration) at 506 cm-1 for Fe(TPP)F and the ν(F-Fe-F) at 448 cm-1 for [Fe(TPP)F2]-, simultaneously, with 441.6 nm excitation by Resonance Raman (RR) spectroscopy. These assignments were confirmed by observed frequency shifts due to 56Fe/54Fe and TPP/TPP-d8/TPP-N15 isotopic substitutions. Difluoroiron complex is an iron(Ⅲ) high-spin complex with the oxidation sensitive band at 1347 cm-1 for ν4 and core size/spin state sensitive band at 1541 cm-1 for ν2.

• Bulletin of the Korean Chemical Society
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• v.15 no.11
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• pp.949-953
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• 1994

In oxides characterized by the $K_2NiF_4-type$ structure, the low-spin${\to}$high-spin transition of trivalent cobalt ion was studied in function of the nature of competing bonds in the perovskite-plane and along the c-axis. Using Slichter and Drickamer's model the calculated values of parameters characterizing such a transition are correlated with the covalency of competing bonds along the c-axis of the $K_2NiF_4$-structure and the local structural distortion of the $(CoO_6)$ octahedron.

• Bulletin of the Korean Chemical Society
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• v.20 no.4
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• pp.436-440
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• 1999

The highly resolved absorption spectra of mer-[Cr(dpt)(Gly-Gly)]ClO4·H2O [dpt = di(3-aminopropyl)amine, H2Gly-Gly = glycylglycine] have been measured between 13000 cm-1 and 50000 cm-1 temperatures down to 2 K. The vibrational intervals were extracted by recording emission and far-infrared spectra. The characteristic infrared bands in meridional isomer were discussed. The four-teen electronic origins due to spin-allowed and spin-forbidden transitions were assigned. With the use of this electronic transitions, a ligand field optimization based on the exact known ligand geometry have been performed to determine more detailed bonding properties of Gly-Gly and dpt ligands. It is confirmed that the peptide nitrogen of the Gly-Gly has a weak π-donor property toward chrornium(Ⅲ) ion.

• Journal of the Korean Magnetics Society
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• v.5 no.6
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• pp.952-955
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• 1995

It is well kown that the side-jump effect, originated from the spin-orbit scatterring of the transport electrons at the site of spin-orbit scatterers, is the reason for the anomalus Hall resistivity which is proportional to the magnetization. Our recent magnetization study implied that abundant ferromagnetic Fe clusters made of for Fe ions dominate the temperature and field dependence of magnetization at high field and low temperature regime for a paramagnetic $Fe_{0.33}Zr_{0.67}$ alloy. We measured the Hall resistivity of this alloy and observed that the Hall resistivity followed the M-H cure at low temperature, and the Hall coefficients at moderate temperatures were proportional to the magnetic susceptibility. We explain the behavior of Hall resistivity with the change of field and temperature in terms of side-jump effect.

• Journal of Magnetics
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• v.17 no.3
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• pp.214-218
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• 2012

The water level and temperature properties for the cooling system of potassium titanyl phosphate laser systems were observed. The middle point of the GMR-SV magnetoresistance curve is set in the neighborhood of high magnetic sensitivity (2.8 %/Oe). The experimental results for resistance dependence on water height and temperature showed linear regions with rates of 0.4 ${\Omega}/mm$ and 0.1 ${\Omega}/^{\circ}C$, respectively. The proposed results were found to be for adjusting the water level and temperature in the laser cooling system.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.6
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• pp.504-510
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• 2002

Recently, thin film capacitors of high dielectric constant and low leakage current are applied to integrated devices. In this study, (Ba, Sr)$TiO_3$ (BST) thin films for low cost were prepared by Sol-Gel method. BST solution was spin-coated on Pt/$SiO_2$/Si substrate at 4,000 rpm for 10 seconds. Coating process was repeated 3 times and then sintered at $700^{\circ}C$ for 30 minutes. Structural and electrical characteristics of each specimen were analyzed by TG-DTA, SEM, fractal phenomenon, voltage-current and dielectric factor. Thickness of BST ceramics thin films are about 2,600~2,800 ${\AA}$ at depositing 3 times. Dielectric constant of thin films was decreased in 1 kHz~1 MHz. Dielectric constant and loss to frequency were 250 and 0.02 in $(Ba_{0.7}Sr_{0.3})TiO_3$ (BST3). Leakage current of BST3 was $10^{-9}\sim10^{-11}$/ A under 3 V.

• Journal of the Korean Society for Precision Engineering
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• v.22 no.1
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• pp.199-206
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• 2005

Mask manufacturing is a high COC and COO process in developing of semiconductor devices because of mask production tool with high resolution. Direct writing has been thought to be the one of the patterning method to cope with development or small-lot production of the device. This study consists two categories. One is the additional process of the direct and maskless patterning generation using SLA for easy and convenient application and the other is a removal process using wet-etching process. In this study, cured status of epoxy pattern is most important parameter because of the beer-lambert law according to the diffusion of UV light. In order to improve the contact force between patterns and substrate, prime process was performed and to remove the semi-cured resin which makes a bad effects to the pattern, spin cleaning process using TPM was also performed. At a removal process, contact force between photo-curable resin as an etching mask and Si wafer is important parameter.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.336-336
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• 2013

Zinc oxide (ZnO) based transparent oxide semiconductors have been studied due to their high transmittance and electrical conductivity. Pure ZnO have unstable optical and electrical properties at high temperatures but doped ZnO thin films can have stable optical and electrical properties. In this paper, transparent oxide semiconductors of Y-doped ZnO thin films prepared by sol-gel method. The ionic radius of $Y^{3+}$ (0.90 A) is close to that of $Zn^{2+}$ (0.74 A), which makes Y suitable dopant for ZnO thin films. The Sn-doped ZnO thin films were deposited onto quartz substrates with different atomic percentages of dopant which were Y/Zn = 0, 1, 2, 3, 4, and 5 at.%. These thin films were pre-heated at $150^{\circ}C$ for 10 min and then annealed at $500^{\circ}C$ or 1 h. The structural and optical properties of the Y-doped ZnO thin films were investigated using field-emission scanning electronmicroscopy (FE-SEM), X-ray diffraction (XRD), UV-visible spectroscopy, and photoluminescence (PL).

• Proceedings of the Korean Society of Applied Pharmacology
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• 2000.04a
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• pp.6-7
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• 2000

Recently, free radicals such as active oxygen species, nitric oxide, etc are believed to be one of the key substances in physiological and pathological, toxicological phenomena, and oxidative damages, and all organism have defencing system against such as free radicals. Formation and extinction of free radicals may be regulated through bio-redox system, in which various enzymes and compounds should be involved in very complicated manner. Thus, direct and non-invasive measurement of in vivo free radical reactions with living animals must be essential to understand the role of free radicals in pathophysiological phenomena. Electron spin resonance spectroscopy (ESR) is very selective and sensitive technique to detect free radicals, but a conventional ESR spectrometer has large detect in application to living animals, since high frequent microwave is absorbed with water, resulting in generation of high fever in living body. In order to estimate in vivo free radical reactions in living whole animals, we develop in vivo ESR-CT technique using nitroxide radicals as spin probes. Nitroxide radicals and their reduced forms, hydroxylamines, are known to interact with various redox systems. We found that! ! the signal decay due to reduction of nitroxyl radicals is influenced by aging, inspired oxygen concentration, ischemia-referfusion injury, radiation, etc. In the present paper, I will introduce in vivo ESR technique and my laboratory recent results concerning non-invasive evaluation of free radical reactions in living mice.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.05c
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• pp.143-147
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• 2001

Ferromagnetism in manganese compound semiconductors open prospects for tailoring magnetic and spin-related phenomena in semiconductors with a precision specific to III-V compounds. Also it addresses a question about the origin of the magnetic interactions that lead to a Curie temperature(Tc) as high as 110 K for a manganese concentration of just 5%. Zener's model of ferromagnetism, originally suggested for transition metals in 1950, can explain Tc of $Ga_{1-x}Mn_x$ As and that of its IT-VI counterpart $Zn_{1-x}Mn_x$ Te and is used to predict materials with Tc exceeding room temperature, an important step toward semiconductor electronics that use both charge and spin. In this article, we present not only the experimental result but calculated Curie temperature by RKKY interaction. The problem in making III-V semiconductor has been the low solubility of magnetic elements, such as manganese, in the compound, since the magnetic effects are roughly proportional to the concentration of the magnetic ions. Low solubility of magnetic elements was overcome by low-temperature nonequilibrium MBE{molecular beam epitaxy) growth, and ferromagnetic (Ga,Mn)As was realized. Magnetotransport measurements revealed that the magnetic transition temperature can be as high as 110 K for a small manganese concentration.