• KEPCO Journal on Electric Power and Energy
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• 제8권2호
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• pp.159-179
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• 2022

Often a network becomes complex, and multiple entities would get in charge of managing part of the whole network. An example is a utility grid. While the entire grid would go under a single utility company's responsibility, the network is often split into multiple subsections. Subsequently, each subsection would be given as the responsibility area to the corresponding sub-organization in the utility company. The issue of how to make subsystems of adequate size and minimum number of interconnections between subsystems becomes more critical, especially in real-time simulations. Because the computation capability limit of a single computation unit, regardless of whether it is a high-speed conventional CPU core or an FPGA computational engine, it comes with a maximum limit that can be completed within a given amount of execution time. The issue becomes worsened in real time simulation, in which the computation needs to be in precise synchronization with the real-world clock. When the subject of the computation allows for a longer execution time, i.e., a larger time step size, a larger portion of the network can be put on a computation unit. This translates into a larger margin of the difference between the worst and the best. In other words, even though the worst (or the largest) computational burden is orders of magnitude larger than the best (or the smallest) computational burden, all the necessary computation can still be completed within the given amount of time. However, the requirement of real-time makes the margin much smaller. In other words, the difference between the worst and the best should be as small as possible in order to ensure the even distribution of the computational load. Besides, data exchange/communication is essential in parallel computation, affecting the overall performance. However, the exchange of data takes time. Therefore, the corresponding consideration needs to be with the computational load distribution among multiple calculation units. If it turns out in a satisfactory way, such distribution will raise the possibility of completing the necessary computation in a given amount of time, which might come down in the level of microsecond order. This paper presents an effective way to split a given electrical network, according to multiple criteria, for the purpose of distributing the entire computational load into a set of even (or close to even) sized computational loads. Based on the proposed system splitting method, heavy computation burdens of large-scale electrical networks can be distributed to multiple calculation units, such as an RTDS real time simulator, achieving either more efficient usage of the calculation units, a reduction of the necessary size of the simulation time step, or both.

• 한국지구물리탐사학회:학술대회논문집
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• 한국지구물리탐사학회 2002년도 정기총회 및 제4회 특별심포지움
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• pp.139-162
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• 2002

수로는 약선대를 따라 형성되는 경우가 많으며, 특히 강을 따라 단층이 발달하는 경우가 많다. 교량과 같은 수상 구조물의 건설을 위하여 탐사의 필요성이 많았음에도 불구하고 육상과는 달리 수상 전기비저항 탐사가 활발하게 적용되지 못한 것은 현장탐사와 해석의 어려움 때문이었다고 볼 수 있다. 그러나 무엇보다도 중요한 것은 양질의 자료 획득이며, 양질의 자료 획득이 육상탐사보다 어려운 것은 영상화하고자 하는 지하구조가 물로 덮여 있다는 점에서 연유한다. 이 연구에서는 이와 같은 점에 중점을 두고 수치 모델링과 현장탐사 사례 분석을 통하여 수상 전기비저항 탐사 자료의 특성, 현장 탐사와 해석 방법에 대하여 논하였다. 수상 전기비저항 탐사는 전극이 물 표면에 혹은 물 바닥에 설치되어 있는가에 따라 탐사자료의 획득방법, 고려사항, 해석 방법이 달라지므로, 전극을 물 표면에 띄운 경우와 바닥에 설치한 경우로 나누어 논의를 전개하였다. 이를 통하여 하상 전기비저항 탐사는 수 층 하부 지반을 정확하게 영상화할 수 있음을 보였다. 또한 수상 전기비저항 탐사에서 전극을 물 바닥에 설치하는 것이 물 표면에 설치하는 것보다 훨씬 더 분해능이 높은 영상을 획득할 수 있으나, 육상탐사에 비하여 지하구조에 대한 민감도는 훨씬 낮고, 유동전위 등에 의하여 전기잡음이 높을 가능성이 높기 때문에 육상탐사보다 훨씬 높은 S/N 비를 갖는 현장 탐사자료의 획득이 필수적이며 가능한 한 높은 분해능을 갖는 전극배열을 선택하여야 하는 것으로 나타났다 전극을 물 바닥에 설치하는 방법은 고분해능 영상을 제공할 수 있기 때문에 지하의 정밀 영상을 획득하기 위한 정밀탐사에 적합하다. 이에 반해 물 표면에 전극을 띄워서 자료를 획득하는 방법은, 특히 이동하면 연속적으로 탐사하는 스트리머 전기비저항 탐사는 매우 빠른 시간에 넓은 지역을 탐사할 수 있기 때문에 개략탐사에 많은 활용이 기대된다.향상을 위해 좀더 적극적인 치료가 필요하다.과 TIMP-2의 발현의 정도는 차이가 있었으며, 각 장기의 특정한 세포에서만 발현이 되었다. TIMP-1의 경우 간과 신장에서는 방사선에 의해 발현이 증가되었으나 폐에서는 발현이 증가되지 않았다. TIMP-2의 경우 폐에서는 방사선에 의해 발현이 증가하였으나 간과 폐에서는 방사선에 의한 발현의 변화는 불규칙적이었다. 방사선 조사 후 경과 시간과 방사선량에 따른 발현의 변화도 일정하지 않았다.EX> 발현의 감소가 관찰되어, Captopril이 조기 폐손상을 억제하는 방사선보호제로서 기전의 일부에 $TNF\alpha$와 $TGF\beta1$이 관여함을 확인할 수 있었다.주의 정책으로 우리 민족의 정서와 문화를 보존하는 일에 등한시하여 왔다. 이 때문에 우리 민족 고유의 뿌리를 점차 잃어가고 있다. 이러한 시점에서 도시노점상을 정리하기 위한 목적으로 정부에서 도시 5일장을 개장한 것은 역사의 아이러니라 아니할 수 없다. 이렇게 정부주도로 개장된 5일장이 운영되어 온 지 2년이 되어가고 있다. 개장 초기에는 시에서의 지원도 적극적이고 소비자들의 호응도 좋았으나, 최근에 들어 활성화의 속도가 둔화되면서 도시 5일장의 개념을 재정립할 필요성이 제기되고 있다. 정부의 주도로 시작된 5일장이므로 정부의 적극적인 추진하에 풍물시장 번영회와 활성화 방안을 모색해야 한다. 쌍다리 풍물시장의 5일장을 활성화하기 위하여 도시 5일장의 개념을 ${\ulcorner}$국민들의 생활수준이 향상되고 여가를 즐길 수 있는 여건이 형성되고 있으므로 전통문화(향토문화)를 유지하고 시민들의 정서함양에 기여할 수 있는 여가공간 조성${\lrcorner}$으로 규정해야 한다. 이러한 개념 하에 5일장의 주체를 명확히 하기 위해 시청 지역경제과를 중심으로 지자제의 실시에

• 한국결정성장학회:학술대회논문집
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• 한국결정성장학회 1996년도 The 9th KACG Technical Annual Meeting and the 3rd Korea-Japan EMGS (Electronic Materials Growth Symposium)
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• pp.422-448
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• 1996

Low-temperature epitaxial growth of Si and SiGe layers of Si is one of the important processes for the fabrication of the high-speed Si-based heterostructure devices such as heterojunction bipolar transistors. Low-temperature growth ensures the abrupt compositional and doping concentration profiles for future novel devices. Especially in SiGe epitaxy, low-temperature growth is a prerequisite for two-dimensional growth mode for the growth of thin, uniform layers. UHV-ECRCVD is a new growth technique for Si and SiGe epilayers and it is possible to grow epilayers at even lower temperatures than conventional CVD's. SiH and GeH and dopant gases are dissociated by an ECR plasma in an ultrahigh vacuum growth chamber. In situ hydrogen plasma cleaning of the Si native oxide before the epitaxial growth is successfully developed in UHV-ECRCVD. Structural quality of the epilayers are examined by reflection high energy electron diffraction, transmission electron microscopy, Nomarski microscope and atomic force microscope. Device-quality Si and SiGe epilayers are successfully grown at temperatures lower than 600℃ after proper optimization of process parameters such as temperature, total pressure, partial pressures of input gases, plasma power, and substrate dc bias. Dopant incorporation and activation for B in Si and SiGe are studied by secondary ion mass spectrometry and spreading resistance profilometry. Silicon p-n homojunction diodes are fabricated from in situ doped Si layers. I-V characteristics of the diodes shows that the ideality factor is 1.2, implying that the low-temperature silicon epilayers grown by UHV-ECRCVD is truly of device-quality.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2017년도 춘계학술대회 논문집
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• pp.69-69
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• 2017

For several decades, industrial processes consume a huge amount of raw water for various objects that consequently results in the generation of large amounts of wastewater. There effluents are mainly treated by conventional technologies such are aerobic, anaerobic treatment and chemical coagulation. But, there processes are not suitable for eliminating all hazardous chemical compounds form wastewater and generate a large amount of toxic sludge. Therefore, other processes have been studied and applied together with these techniques to enhance purification results. These techniques include photocatalysis, absorption, advanced oxidation processes, and ozonation, but also have their own drawbacks. In recent years, electrochemical techniques have received attention as wastewater treatment process that show higher purification results and low toxic sludge. There are many kinds of electrode materials for electrochemical process, among them, boron doped diamond (BDD) attracts attention due to good chemical and electrochemical stability, long lifetime and wide potential window that necessary properties for anode electrode. So, there are many researches about high quality BDD, among them, researches are focused BDD on Si substrate. But, Si substrate is hard to apply electrode application due to the brittleness and low life time. And other substrates are also not suitable for wastewater treatment electrode due to high cost. To solve these problems, Ti has been candidate as substrate in consideration of cost and properties. But there are critical issues about adhesion that must be overcome to apply Ti as substrate. In this study, to overcome this problem, TiN interlayer is introduced between BDD and Ti substrate. TiN has higher electrical and thermal conductivity, melting point, and similar crystalline structure with diamond. The TiN interlayer was deposited by reactive DC magnetron sputtering (DCMS) with thickness of 50 nm, $1{\mu}m$. The microstructure of BDD films with TiN interlayer were estimated by FE-SEM and XRD. There are no significant differences in surface grain size despite of various interlayer. In wastewater treatment results, the BDD electrode with TiN (50nm) showed the highest electrolysis speed at livestock wastewater treatment experiments. It is thought to be that TiN with thickness of 50 nm successfully suppressed formation of TiC that harmful to adhesion. And TiN with thickness of $1{\mu}m$ cannot suppress TiC formation.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.390-390
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• 2012

Information technology industries has grown rapidly and demanded alternative memories for the next generation. The most popular random access memory, dynamic random-access memory (DRAM), has many advantages as a memory, but it could not meet the demands from the current of developed industries. One of highlighted alternative memories is magnetic random-access memory (MRAM). It has many advantages like low power consumption, huge storage, high operating speed, and non-volatile properties. MRAM consists of magnetic-tunnel-junction (MTJ) stack which is a key part of it and has various magnetic thin films like CoFeB, FePt, IrMn, and so on. Each magnetic thin film is difficult to be etched without any damages and react with chemical species in plasma. For improving the etching process, a high density plasma etching process was employed. Moreover, the previous etching gases were highly corrosive and dangerous. Therefore, the safety etching gases are needed to be developed. In this research, the etch characteristics of CoFeB magnetic thin films were studied by using an inductively coupled plasma reactive ion etching in $CH_4/O_2/Ar$ gas mixes. TiN thin films were used as a hardmask on CoFeB thin films. The concentrations of $O_2$ in $CH_4/O_2/Ar$ gas mix were varied, and then, the rf coil power, gas pressure, and dc-bias voltage. The etch rates and the selectivity were obtained by a surface profiler and the etch profiles were observed by a field emission scanning electron microscopy. X-ray photoelectron spectroscopy was employed to reveal the etch mechanism.

• 전자공학회논문지A
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• 제30A권12호
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• pp.51-59
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• 1993

A 4${\times}10^{19}cm^{3}$ carbon-doped base AlGaAs/GaAs HBY was grown using carbontetracholoride(CCl$_4$) by atmospheric pressure MOCVD. Abruptness of emitter-base junction was characterized by SIMS(secondary ion mass spectorscopy) and the doping concentration of base layer was confirmed by DXRD(double crystal X-ray diffractometry). Mesa-type HBTs were fabricated using wet etching and lift-off technique. The base sheet resistance of R$_{sheet}$=550${\Omega}$/square was measured using TLM(transmission line model) method. The fabricated transistor achieved a collector-base junction breakdown voltage of BV$_{CBO}$=25V and a critical collector current density of J$_{O}$=40kA/cm$^2$ at V$_{CE}$=2V. The 50$\times$100$\mu$$^2$ emitter transistor showed a common emitter DC current gain of h$_{FE}$=30 at a collector current density of JS1CT=5kA/cm$^2$ and a base current ideality factor of ηS1EBT=1.4. The high frequency characterization of 5$\times$50$\mu$m$^2$ emitter transistor was carried out by on-wafer S-parameter measurement at 0.1~18.1GHz. Current gain cutoff frequency of f$_{T}$=27GHz and maximum oscillation frequency of f$_{max}$=16GHz were obtained from the measured Sparameter and device parameters of small-signal lumped-element equivalent network were extracted using Libra software. The fabricated HBT was proved to be useful to high speed and power spplications.

• 한국전자파학회논문지
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• 제15권10호
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• pp.1011-1017
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• 2004

UWB(Ultra Wideband) 기술은 초고속통신, 고정밀의 위치정보시스템 등을 구현하기 위하여 500 MHz 이상의 광대역 주파수 자원이 요구되고 있다. UWB 신호의 에너지는 DC로부터 수 GHz까지 광대역 특성을 갖기 때문에, 현재 사용되고 있는 통신시스템들과의 간섭에 대한 분석이 필수적이라고 할 수 있지만 아직까지 국내에서 UWB 신호와 Cellular CDMA(Code Division Mutiple Access) 이동통신과 WCDMA(Wideband CDMA)와 간섭에 대한 연구가 이루어지고 있지 않다. 본 논문에서는 임펄스 방식과 DS-CDMA(Direct Sequence-CDMA) 방식의 UWB 신호원과 국내 이동통신 서비스중 Cellular CDMA와 WCDMA의 간섭에 관하여 측정을 하고 분석하였다. 본 논문의 결과로부터, 임펄스 방식에 비해 DS-CDMA방식의 UWB 신호는 이동통신시스템에 간섭효과가 크지 않다는 사실을 얻었다.

• 한국통신학회논문지
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• 제21권12호
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• pp.3235-3245
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• 1996

이산스펙트럽(Spread Spectrum) 통신 시스템에 사용되는 DDFS(Direct Digital Frequency Synthesizer)는 짧은 천이시간과 광대역의 특성을 요구하고, 전력소모도 적어야 한다. 이를 위해서 본 연구의 DDFS는 파이프라인 구조의 위상 가산기와 4개의 sine ROM을 병렬로 구성하여, 단일 sine ROM으로 구성된 DDFS에 비해 처리 속도를 4배 개선하였다. 위상 가산기의 위상 잘림으로 나빠지는 스펙트럼 특성은 위상 가산기 구조와 같은 잡음 정형기를 사용하여 보상하였고, 잡음 정형기의 출력 중 상위 8-bit만을 sine ROM의 어드레스로 사용하였다. 각각의 sine ROM은 사인 파형의 대칭성을 이용하여, 0 ~ $\pi$/2 사인 파형의 위상, 진폭 정보를 저장함으로 0 ~ 2$\pi$ 사인 파형의 정보를 갖는 sine ROM에 비해 크기를 크게 줄였고, 어드레스의 상위 2-bit를 제어 비트로 사용하여 2$\pi$의 사인 파형을 조합했다. 입력 클럭을 1/2, 1/4로 분주하여, 1/4 주기의 낮은 클럭 주파수로 대부분의 시스템을 구동하여, 소비 전력을 감소시켰다. DDFS 칩은 $0.8{\mu}$ CMOS 표준 공정의 게이트 어레이 기술을 이용ㅇ하여 구현하였다. 측정 결과 107MHz의 구동 클럭에서 안정하게 동작하였고, 26.7MHz의 최대 출력 주파수를 발생시켰다. 스펙트럼 순수도(Spectral purity)는 -65dBc이며, tuning latency는 55 클럭이다. DDFS칩의 소비 전력은 40MHz의 클럭 입력과 5V 단일 전원을 사용하였을 때 276.5mW이다.

• 한국산업융합학회 논문집
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• 제21권3호
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• pp.141-147
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• 2018

In a time when product development cycles are getting shorter and shorter, many companies are making efforts to develop products with high reliability in a short period of time, accelerated life test is widely used as a method to quickly evaluate reliability. Accelerated life test reduces the test life or the life of the product from the observed data by shortening the lifetime of the product or abruptly lowering the performance under the worse condition than the actual condition in order to shorten the test cost or the test time. In this paper, BL3640A-06P+RB35, DC12V model, which is used in the support device of an automatic rotation type digital signage, which display various information such as textures and images on a display screen in a public place or a commercial space, BLDC motors were subjected to a constant stress test and at the rotational speed of 1rpm, $180^{\circ}$ rotation and reverse rotation under actual use conditions, the stress was imposed on the rotating speed of 2rpm and the weight of the actual installed product from 22.2kgf to 10kgf were installed. The lifetime of the actual use environment condition is 23,545 hours and the rotation speed is accelerated. The life time of the acceleration condition with the additional weight is 1,380 hours. The acceleration factor is calculated as 17.06, the one year guarantee test day is 235 days to 14 days, of the period from 470 days to 28 days, and the third year from 704 days to 42 days. The test date of the BLDC motor was tested on the shortened test date, and the rotational speed and the current value were measured. It is found that there is no defect even if it operates as the test date corresponding to the specified one year warranty period and the 3 year accelerated life test which is experimented. Using the statistical technique of the regression analysis the expected time for the motor to defect to #4 samples was 20 years.

• 한국재료학회지
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• 제21권5호
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• pp.255-262
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• 2011

This paper has relatively high technical standard and experimental skill. The fabrication of TCO film with high transparency, low resistance and low chromaticity require exact control of several competing factors. This paper has resolved these problems reasonably well, thus recommended for publication. Indium tin oxide(ITO) thin films were by D.C. magnetron roll-to-roll sputter system utilizing ITO and $SiO_2$ targets of ITO and $SiO_2$. In this experiment, the effect of D.C. power, winding speed, and oxygen flow rate on electrical and optical properties of ITO thin films were investigated from the view point of sheet resistance, transmittance, and chromaticity($b^*$). The deposition of $SiO_2$ was performed with RF power of 400W, Ar gas of 50 sccm and the deposition of ITO, DC power of 600W, Ar gas of 50 sccm, $O^2$ gas of 0.2 sccm, and winding speed of 0.56m/min. High quality ITO thin films without $SiO_2$ layer had chromaticity of 2.87, sheet resistivity of 400 ohm/square, and transmittance of 88% and $SiO_2$-doped ITO Thin film with chromaticity of 2.01, sheet resistivity of 709 ohm/square, and transmittance of more than 90% were obtained. As a result, $SiO_2$ was coated on PET before deposition of ITO, their chromaticity($b^*$) and transmittance were better than previous results of ITO films. These results show that coating of $SiO_2$ induced arising chromaticity($b^*$) and transmittance. If the thickness of $SiO_2$ is controlled, sheet resistance value of ITO film will be expected to be better for touch screen. A four point probe and spectrophotometer are used to investigate the properties of ITO thin films.