• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.24 no.9
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• pp.936-943
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• 2013

This work presents the design and measured results of the single channel automotive radar system for 76.5~77 GHz long range FMCW radar applications. The transmitter uses a commercial GaAs monolithic microwave integrated circuit(MMIC) and the receiver uses the down converter designed using 65 nm CMOS process. The output power of the transmitter is 10 dBm. The down converter chip can operate at low LO power as -8 dBm which is easily supplied from the transmitter output using a coupled line coupler. All MMICs are mounted on an aluminum jig which embeds the WR-10 waveguide. A microstrip to waveguide transition is designed to feed the embedded waveguide and finally high gain horn antennas. The overall size of the fabricated radar system is $80mm{\times}61mm{\times}21mm$. The radar system achieved an output power of 10 dBm, phase noise of -94 dBc/Hz at 1 MHz offset and a conversion gain of 12 dB.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.9
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• pp.71-80
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• 2007

This paper presents a new push-push VCO technique that extracts a second harmonic output signal from a capacitive commonnode in a negativegm oscillator topology. The generation of the $2^{nd}$ harmonics is accounted for by the nonlinear current-voltage characteristic of the emitter-base junction diode causing; 1) significant voltage clipping and 2) different rising and falling time during the switching operation of core transistors. Comparative investigations show the technique is more power efficient in the high-frequency region that a conventional push-push technique using an emitter common node. Prototype 12GHz and 17GHz MMIC VCO were realized in GaInP/GaAs HBT technology. They have shown nominal output power of -4.3dBm and -5dBm, phase noise of -108 dBc/Hz and -110.4 dBc/Hz at 1MHz offset, respectively. The phase noise results are also equivalent to a VCO figure-of-merit of -175.8 dBc/Hz and -184.3 dBc/Hz, while dissipate 25.68mW(10.7mA/2.4V) and 13.14mW(4.38mA/3.0V), respectively.

• Applied Chemistry for Engineering
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• v.10 no.1
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• pp.98-104
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• 1999

In this work, we investigated hydrogen content, bond structure, and electrical properties of a-Si:H films prepared by ECR plasma CVD as a function of pressure. In general, the photo sensitivity of a-Si:H films prepared by CVD method decreases as the deposition rate increases, but the photo sensitivity of a-Si:H films prepared by ECR plasma deposition method increases as the deposition rate increases. In the same condition of microwave power, the ratio of $SiH_4/H_2$, and pressure, though film thickness increases linearly with deposition time and hydrogen content in the film is constant, photo conductivity can be decreased because $SiH_2$ bond is made more than SiH bond in the short reaction time. According to increase pressure in the chamber, SiH bond in the film increase and optical energy gap decrease. So, photo conductivity can be increased. But photo sensitivity decreased as dark conductivity increase. It must be grown in the condition of low pressure and hydrogen gas for taking the a-Si:H film of high quality.

• Proceedings of the Korean Vacuum Society Conference
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• 1996.06a
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• pp.40-41
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• 1996

Nitridation technique has been receiving much attention for the formation of a thin nitrided buffer layer on which high quality nitride films can be formedl. Particularly, gallium nitride (GaN) has been considered as a promising material for blue-and ultraviolet-emitting devices. It can also be used for in situ formed and stable passivation layers for selective growth of $GaAs_2$. In this work, formation of a thin nitrided layer is investigated. Nitrogen electron cyclotron resonance(ECR)-plasma is employed for the formation of thin nitrided layer. The plasma source used in this work is a compact ECR plasma gun3 which is specifically designed to enhance control, and to provide in-situ monitoring of plasma parameters during plasma-assisted processing. Microwave power of 100-200 W was used to excite the plasma which was emitted from an orifice of 25 rnm in diameter. The substrate were positioned 15 em away from the orifice of plasma source. Prior to nitridation is performed, the surface of n-type (001)GaAs was exposed to hydrogen plasma for 20 min at $300{\;}^{\circ}C$ in order to eliminate a native oxide formed on GaAs surface. Change from ring to streak in RHEED pattern can be obtained through the irradiation of hydrogen plasma, indicating a clean surface. Nitridation was carried out for 5-40 min at $RT-600{\;}^{\circ}C$ in a ECR plasma-assisted molecular beam epitaxy system. Typical chamber pressure was $7.5{\times}lO^{-4}$ Torr during the nitridations at $N_2$ flow rate of 10 seem.(omitted)mitted)

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.1
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• pp.8-14
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• 1999

The active devices used at microwave frequency have the different phase shift according to input power. Especially, The difference of the phase shift is large in the saturation region of the amplifier. In this paper, we disigned the phase control system for fixing the different phase shift at device. With the high frequency nonlinear amplifier, we fabricated such system that the phase shift to be fixed automatically using the varible phase shifter. The variable phase shifter fixed total phase variation of the circuit using the information that was obtained from the comparison of imputsignal phase with output signal phase. Even though the input signal is 2-tone or FM type, we could estimate and also fix the phase variation on DUT Dynamic range is about 10dB. It has been experimented at 1960MHz using Teflon (H=31mil, ${\varepsilon}r$=3.2)

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.16 no.2 s.93
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• pp.134-138
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• 2005

In this paper, we have developed a new type of the microwave phase conjugator for the active retrodirective antenna array. The circuit topology is consisted of a 2-port structure to avoid the complexity of LO and RF signal combination and matching, using the cascade connection of two single-ended mixers. The operating frequencies are 4.0 GHz, 2.01 GHz and 1.99 GHz for LO, RF, and IF, respectively. Conversion loss is measured to be -7 dB and 1-dB compression point 15 dBm with the LO power of 9 dBm. For the most important parameter, the isolation between RE leakage and IF signal is as high as 25 dB.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.16 no.2 s.93
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• pp.154-160
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• 2005

Microwave Otters are essential device in modem wireless systems. A compact dimension BPF(Band-pass Filter) for IEEE 802.11a WLAN service is realized using LTCC multi-layer process. To extrude 2-stage band-pass equivalent circuit, band-pass and J-inverter transform applied to Chebyshev low-pass prototype filter. Because parallel L-C resonator is complicate and hard to control the inductor characteristics in high frequency, the shorted $\lambda/4$ stripline is selected for the resonator structure. The passive element is located in the different layers connected by conventional via structure and isolated by inner GND. The dimension of fabricated stacked band-pass filter which is composed of six layers, is $2.51\times2.27\times1.02\;mm^3$. The measured filter characteristics show the insertion loss of -2.25 dB, half-power bandwidth of 220 MHz, attenuation at 5.7 GHz of -32.25 dB and group delay of 0.9 ns at 5.25 GHz.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.39 no.11
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• pp.34-39
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• 2002

In this paper, we proposed novel photonic bandgap(PBG) structure using EGP(Elevated Ground Plane) and via in ceramic substrate of microstrip line. From analysis result, the proposed PBG structure is reduced 52.5% at size and increased 45 % at bandwidth compared to typical planar PBG structure. It is also reduced 32 % at size and improved more than 8 dB at power loss compared to typical multilayer DGS(Defected Ground Structure). The proposed PBG structure also can be used bandstop and lowpass filter and it will be useful for small microwave integrated circuit and module development.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.15 no.3
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• pp.271-277
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• 2004

A Si(Silicon) MEMS(Micro Electro Mechanical System) package using a doped lossy Si carrier for CPW(Coplanar Waveguide) MMICs(Microwave and Millimeter-wave Integrated Circuits) is proposed in order to reduce parasitic problems of leakage, coupling and resonance. The proposed chip-carrier scheme is verified by fabricating and measuring a GaAs CPW on the two types of carriers(conductor-back metal, doped lossy Si) in the frequency from 0.5 to 40 ㎓. The proposed MEMS package using the lightly doped lossy(15 Ω$.$cm) Si chip-carrier and the HRS(High Resistivity Silicon, 15 ㏀$.$cm) shows the optimized loss and parasitic problems-free since the doped lossy Si-carrier effectively absorbs and suppresses the resonant leakage. The Si MEMS package for CPW MMICs has an insertion loss of only - 2.0 ㏈ and a power loss of - 7.5 ㏈ at 40 ㎓.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.15 no.3
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• pp.258-264
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• 2004

In this paper, MMIC double balanced star mixer for 40 ㎓ was implemented on GaAs substrate with backside vias. In the design of the MMIC mixer, the design of balun and diode was required. A novel balun structure using microstrip to CPS was presented. The 40 ㎓ balun was designed based on the design experience of the scale-down balun by 2 ㎓. The balun may be suitable for fabrication in MMIC process with backside via and can easily be applied for DBM(Double Balanced Mixer). A Schottky diode was designed and implemented using p-HEMT process considering the compatability with other high frequency MMIC's fabricated on p-HEMT base process. Finally, the double balanced star mixer was fabricated using the balun and the p=HEMP Schottky diode. The measured performance of mixer shows 30 ㏈ conversion loss at 18 ㏈m LO power. This insufficient performance is caused by the unwanted diode at AlGaAs junction in vertical structure of p-HEMT. If the p-HEMT's gate is recessed to AlGaAs layer, and so the diode is eliminated, the mixer's performances will be improved.