• Title/Summary/Keyword: High-isolation

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A Study on the Design and Implementation of Simulated Signal Generator for VHF Radar with High Interference and Immunity Characteristics (간섭신호 내성 및 격리도 특성이 우수한 초단파 레이다용 모의신호 발생장치의 설계 및 구현에 대한 연구)

  • Kim, Ki-Jung;Lee, Sung-Je;Jang, Youn-Hui
    • The Journal of the Korea institute of electronic communication sciences
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    • v.14 no.1
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    • pp.27-32
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    • 2019

  • This study describes the design and implementation of a simulated signal generator to demonstrate the performance of VHF band radar for the detection of small targets in RCS(Radar Cross Section). The transmission and reception antenna beam widths used in the simulated signal generating apparatus may be large, which may cause problems in the degree of isolation. Interference signal immunity and isolation characteristics are improved by considering operating conditions of VHF radar to solve isolation of antennas. Simulated signal generator performs the following: VHF radar transmission and reception correction, simulation signal generation, target Doppler, RCS and distance simulation, remote control, and GPS clock synchronization function. After the fabrication of the simulated signal generator, the main characteristics, such as the output characteristics and the reflection signal simulations, were tested. When the microwave radar assembly is completed in the future, it will be utilized for the performance evaluation of VHF radar.

  • https://doi.org/10.13067/JKIECS.2019.14.1.27 인용 PDF KSCI HTML

Breakdown Voltage and On-resistance Analysis of Partial-isolation LDMOS (Partial-isolation LDMOS의 항복전압과 온저항 분석)

  • Sin-Wook Kim;Myoung-jin Lee
    • Journal of IKEEE
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    • v.27 no.4
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    • pp.567-572
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    • 2023

  • In this paper, the breakdown voltage of Pi-LDMOS (Partial isolation lateral double diffused metal oxide semiconductor) was analyzed by simulation. Breakdown voltage variation is investigated under various settings of Parial buied oxide(P-BOX) parameters(length, thickness, location) and their mechanism is specified. In addition, the change in on-resistance in the breakdown voltage and trade-off relationship was analyzed according to the change in the P-BOX parameter, and the Figure-of-merit(FOM) was calculated and compared. In proposed structure, Lbox=5 ㎛, tbox=2 ㎛, and Lbc=2 ㎛ showed the highest breakdown voltage of 138V, and Lbox=5 ㎛, tbox=1.6 ㎛, and Lbc=2 ㎛ showed the highest FOM. Compared to conventional LDMOS, the breakdown voltage is 123% and FOM is 3.89 times improved. Therefore, Pi-LDMOS has a high breakdown voltage and FOM, which can contribute to the improvement of the stable operating range of the Power IC.

  • https://doi.org/10.7471/ikeee.2023.27.4.567 인용 PDF

A Study on a SPDT Switch with High Isolation Using Radial Resonators (방사형 공진기를 이용한 고격리도 SPDT 스위치 연구)

  • Yu Ri SO;Yunjian GUO;Jae Gook LEE;Min Jae LEE;Jong Chul Lee
    • The Journal of The Korea Institute of Intelligent Transport Systems
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    • v.22 no.6
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    • pp.223-229
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    • 2023

  • This papart proposes single pole double throw (SPDT) switch with six-stage radial stub resonators in the 3.6~4.0 GHz band. The switch was simulated using ADS (Advanced Design Software), a design tool for the wireless communication circuits, and evaluated on a pcb substrate. The measurement results of the radial SPDT switch showed an average 90 dB isolation, and 1.5 dB insertion loss. This isolation characteristic was 20 dB superior to higher than those laboratory or commercial products reported thus far. The proposed SPDT switch is applicable to multi-band RF front-end systems, such as WiMAX, LTE/5G, Wi-Fi, and HyperLAN.

  • https://doi.org/10.12815/kits.2023.22.6.223 인용 PDF