• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.3
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• pp.77-85
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• 2008

This work proposes a 12b 130MS/s 108mW $1.8mm^2$ 0.18um CMOS ADC for high-quality video systems such as TFT-LCD displays and digital TVs requiring simultaneously high resolution, low power, and small size at high speed. The proposed ADC optimizes power consumption and chip area at the target resolution and sampling rate based on a three-step pipeline architecture. The input SHA with gate-bootstrapped sampling switches and a properly controlled trans-conductance ratio of two amplifier stages achieves a high gain and phase margin for 12b input accuracy at the Nyquist frequency. A signal-insensitive 3D-fully symmetric layout reduces a capacitor and device mismatch of two MDACs. The proposed supply- and temperature- insensitive current and voltage references are implemented on chip with a small number of transistors. The prototype ADC in a 0.18um 1P6M CMOS technology demonstrates a measured DNL and INL within 0.69LSB and 2.12LSB, respectively. The ADC shows a maximum SNDR of 53dB and 51dB and a maximum SFDR of 68dB and 66dB at 120MS/s and 130MS/s, respectively. The ADC with an active die area of $1.8mm^2$ consumes 108mW at 130MS/s and 1.8V.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.259-259
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• 2016

반도체 산업 전반에 걸쳐 이루어지고 있는 연구는 소자를 더 작게 만들면서도 구동능력은 우수한 소자를 만들어내는 것이라고 할 수 있다. 따라서 소자의 미세화와 함께 트랜지스터의 구동능력의 향상을 위한 기술개발에 대한 필요성이 점차 커지고 있으며, 고유전(high-k)재료를 트랜지스터의 게이트 절연막으로 이용하는 방법이 개발되고 있다. High-k 재료를 트랜지스터의 게이트 절연막에 적용하면 낮은 전압으로 소자를 구동할 수 있어서 소비전력이 감소하고 소자의 미세화 측면에서도 매우 유리하다. 그러나, 초미세화된 소자를 제작하기 위하여 high-k 절연막의 두께를 줄이게 되면, 전기적 용량(capacitance)은 커지지만 에너지 밴드 오프셋(band-offset)이 기존의 실리콘 산화막(SiO2)보다 작고 또한 열공정에 의해 쉽게 결정화가 이루어지기 때문에 누설전류가 발생하여 소자의 열화를 초래할 수 있다. 따라서, 최근에는 이러한 문제를 해결하기 위하여 게이트 절연막 엔지니어링을 통해서 누설전류를 줄이면서 전기적 용량을 확보할 수 있는 연구가 주목받고 있다. 본 실험에서는 high-k 물질인 Ta2O5와 SiO2를 적층시켜서 누설전류를 줄이면서 동시에 높은 캐패시턴스를 달성할 수 있는 게이트 절연막 엔지니어링에 대한 연구를 진행하였다. 먼저 n-type Si 기판을 표준 RCA 세정한 다음, RF sputter를 사용하여 두께가 Ta2O5/SiO2 = 50/0, 50/5, 50/10, 25/10, 25/5 nm인 적층구조의 게이트 절연막을 형성하였다. 다음으로 Al 게이트 전극을 150 nm의 두께로 증착한 다음, 전기적 특성 개선을 위하여 furnace N2 분위기에서 $400^{\circ}C$로 30분간 후속 열처리를 진행하여 MOS capacitor 소자를 제작하였고, I-V 및 C-V 측정을 통하여 형성된 게이트 절연막의 전기적 특성을 평가하였다. 그 결과, Ta2O5/SiO2 = 50/0, 50/5, 50/10 nm인 게이트 절연막들은 누설전류는 낮지만, 큰 용량을 얻을 수 없었다. 한편, Ta2O5/SiO2 = 25/10, 25/5 nm의 조합에서는 충분한 용량을 확보할 수 있었다. 적층된 게이트 절연막의 유전상수는 25/5 nm, 25/10 nm 각각 8.3, 7.6으로 비슷하였지만, 문턱치 전압(VTH)은 각각 -0.64 V, -0.18 V로 25/10 nm가 0 V에 보다 근접한 값을 나타내었다. 한편, 누설전류는 25/10 nm가 25/5 nm보다 약 20 nA (@5 V) 낮은 것을 확인할 수 있었으며 절연파괴전압(breakdown voltage)도 증가한 것을 확인하였다. 결론적으로 Ta2O5/SiO2 적층 절연막의 두께가 25nm/10nm에서 최적의 특성을 얻을 수 있었으며, 본 실험과 같이 게이트 절연막 엔지니어링을 통하여 효과적으로 누설전류를 줄이고 게이트 용량을 증가시킴으로써 고집적화된 소자의 제작에 유용한 기술로 기대된다.

• Journal of the Institute of Electronics and Information Engineers
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• v.52 no.5
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• pp.51-57
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• 2015

In this paper, in order to design the A / D converter with a high resolution of 14 bits or more for the biological signal processing, CMOS delta sigma modulator that is a 1.8V power supply voltage - were designed. we propose a new structure of The fourth order delta-sigma modulator that needs four op amps but we use only two op amps. By using a time -interleaving technique, we can re-construct the circuit and reuse the op amps. Also, we proposed a KT/C noise reduction circuit to reduce the thermal noise from a noisy resistor. We adjust the size of sampling capacitor between sampling time and integrating time, so we can reduce almost a half of KT/C noise. The measurement results of the chip is fabricated using a Magna 0.18um CMOS n-well1 poly 6 metal process. Power consumption is $828{\mu}W$ from a 1.8V supply voltage. The peak SNDR is measured as a 75.7dB and 81.3dB of DR at 1kHz input frequency and 256kHz sampling frequency. Measurement results show that KT/C noise reduction circuit enhance the 3dB of SNDR. FOM of the circuit is calculated to be 142dB and 41pJ / step.

• Applied Chemistry for Engineering
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• v.34 no.4
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• pp.426-433
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• 2023

Capacitor performance was considered using coffee grounds-based activated carbon produced through oil extraction and KOH activation to increase the utilization of boiwaste. Oil extraction from coffee grounds was performed by solvent extraction using n-Hexane and isopropyl alcohol solvents. The AC_CG-Hexane/IPA produced by KOH activation after oil extraction increased the specific surface area by up to 16% and the average pore size by up to 2.54 nm compared to AC_CG produced only by KOH activation without oil extraction. In addition, the pyrrolic/pyridinic N functional group of the prepared activated carbon increased with the extraction of oil from coffee grounds. In the cyclic voltage-current method measurement experiment, the specific capacitance of AC_CG-Hexane/IPA at a voltage scanning speed of 10 mV/s is 133 F/g, which is 33% improved compared to the amorphous capacity of AC_CG (100 F/g). The results show improved electrochemical properties by improving the size and specific surface area of the mesopores of activated carbon by removing components from coffee grounds oil and synergistic effects by increasing electrical conductivity with pyrrolic/pyridinic N functional groups. In this study, the recycling method and application of coffee grounds, a bio-waste, is presented, and it is considered to be one of the efficient methods that can be utilized as an electrode material for high-performance supercapacitors.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.16 no.6
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• pp.454-464
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• 2023

This paper proposes a low-power 8-bit asynchronous SAR ADC with a sampling rate of 1 MS/s for sensor node applications. The ADC uses bootstrapped switches to improve linearity and applies a VCM-based CDAC switching technique to reduce the power consumption and area of the DAC. Conventional synchronous SAR ADCs that operate in synchronization with an external clock suffer from high power consumption due to the use of a clock faster than the sampling rate, which can be overcome by using an asynchronous SAR ADC structure that handles internal comparisons in an asynchronous manner. In addition, the SAR logic is designed using dynamic logic circuits to reduce the large digital power consumption that occurs in low resolution ADC designs. The proposed ADC was simulated in a 180-nm CMOS process, and at a 1.8 V supply voltage and a sampling rate of 1 MS/s, it consumed 46.06 𝜇W of power, achieved an SNDR of 49.76 dB and an ENOB of 7.9738 bits, and obtained a FoM of 183.2 fJ/conv-step. The simulated DNL and INL are +0.186/-0.157 LSB and +0.111/-0.169 LSB.

• Journal of the Korea Organic Resources Recycling Association
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• v.31 no.1
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• pp.57-68
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• 2023

In this study, coffee waste was recycled into nitrogen-doped porous carbon fibers as an active material for high-energy EDLC (Electric Double Layer Capacitors). The coffee waste was mixed with polyvinylpyrrolidone and dissolved into dimethylformamide. The mixture was then electrospun to fabricate coffee waste-derived nanofibers (Bare-CWNF), and carbonization process was followed under a nitrogen atmosphere at 900℃. Similar to Bare-CWNF, the as-synthesized carbonized coffee waste-derived nanofibers (Carbonized-CWNF) maintained its fibrous form while preserving the composition of nitrogen. The electrochemical performance was analyzed for carbonized coffee waste (Carbonized-CW)-, carbonized PAN-derived nanofibers (Carbonized-PNF)-, and Carbonized-CWNF-based electrodes in the operating voltage window of -1.0-0.0V, Among the electrodes, Carbonized-CWNF-based electrodes exhibited the highest specific capacitance of 123.8F g^-1 at 1A g^-1 owing to presence of nitrogen and porous structure. As a result, nitrogen-contained porous carbon fibers synthesized from coffee waste showed excellent electrochemical performance as electrodes for high-energy EDLC. The experimental designed in this study successfully demonstrated the recycling of the coffee waste, one of the plant-based biomass that causes the environmental pollution into high-energy materials, also, attaining the ecofriendliness.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.43 no.11 s.353
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• pp.58-68
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• 2006

This work proposes a 10b 250MS/s $1.8mm^2$ 85mW 0.13um CMOS A/D Converter (ADC) for high-performance integrated systems such as next-generation DTV and WLAN simultaneously requiring low voltage, low power, and small area at high speed. The proposed 3-stage pipeline ADC minimizes chip area and power dissipation at the target resolution and sampling rate. The input SHA maintains 10b resolution with either gate-bootstrapped sampling switches or nominal CMOS sampling switches. The SHA and two MDACs based on a conventional 2-stage amplifier employ optimized trans-conductance ratios of two amplifier stages to achieve the required DC gain, bandwidth, and phase margin. The proposed signal insensitive 3-D fully symmetric capacitor layout reduces the device mismatch of two MDACs. The low-noise on-chip current and voltage references can choose optional off-chip voltage references. The prototype ADC is implemented in a 0.13um 1P8M CMOS process. The measured DNL and INL are within 0.24LSB and 0.35LSB while the ADC shows a maximum SNDR of 54dB and 48dB and a maximum SFDR of 67dB and 61dB at 200MS/s and 250MS/s, respectively. The ADC with an active die area of $1.8mm^2$ consumes 85mW at 250MS/s at a 1.2V supply.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.1
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• pp.53-60
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• 2004

This work describes a l0b 150 MSample/s CMOS pipelined A/D converter (ADC) based on advanced bootsuapping techniques for higher input bandwidth than a sampling rate. The proposed ADC adopts a typical multi-step pipelined architecture, employs the merged-capacitor switching technique which improves sampling rate and resolution reducing by $50\%$ the number of unit capacitors used in the multiplying digital-to-analog converter. On-chip current and voltage references for high-speed driving capability of R & C loads and on-chip decimator circuits for high-speed testability are implemented with on-chip decoupling capacitors. The proposed AU is fabricated in a 0.18 um 1P6M CMOS technology. The measured differential and integral nonlinearities are within $-0.56{\~}+0.69$ LSB and $-1.50{\~}+0.68$ LSB, respectively. The prototype ADC shows the signal-to-noise-and-distortion ratio (SNDR) of 52 dB at 150 MSample/s. The active chip area is 2.2 mm2 (= 1.4 mm ${\times}$ 1.6 mm) and the chip consumes 123 mW at 150 MSample/s.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.4
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• pp.27-35
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• 2008

This work proposes a 14b 150MS/s 0.13um CMOS ADC for SDR systems requiring simultaneously high resolution, low power, and small size at high speed. The proposed ADC employs a calibration-free four-step pipeline architecture optimizing the scaling factor for the input trans-conductance of amplifiers and the sampling capacitance in each stage to minimize thermal noise effects and power consumption at the target resolution and sampling rate. A signal- insensitive 3-D fully symmetric layout achieves a 14b level resolution by reducing a capacitor mismatch of three MDACs. The proposed supply- and temperature- insensitive current and voltage references with on-chip RC filters minimizing the effect of switching noise are implemented with off-chip C filters. The prototype ADC in a 0.13um 1P8M CMOS technology demonstrates a measured DNL and INL within 0.81LSB and 2.83LSB, at 14b, respectively. The ADC shows a maximum SNDR of 64dB and 61dB and a maximum SFDR of 71dB and 70dB at 120MS/s and 150MS/s, respectively. The ADC with an active die area of $2.0mm^2$ consumes 140mW at 150MS/s and 1.2V.

• Journal of the Institute of Electronics and Information Engineers
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• v.52 no.2
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• pp.89-96
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• 2015

This paper presents a high efficiency, PSM/DCM/CCM triple mode boost DC-DC converter for mobile application. This device operates at Pulse-Skipping Mode(PSM) when it enters light load, and otherwise operate the operating frequency of 1.4MHz with Pulse-Width Modulation(PWM) mode. Especially in order to improve the efficiency during the Discontinuous-Conduction Mode(DCM) operation period, the reverse current prevention circuit and oscillations caused by the inductor and the parasitic capacitor to prevent the Ringing killer circuit is added. The input voltage of the boost converter ranges from 2.5V ~ 4.2V and it generates the output of 4.8V. The measurement results show that the boost converter provides a peak efficiency of 92% on CCM and 87% on DCM. And an efficiency-improving PWM operation raises the efficiency drop because of transition from PWM to PFM. The converter has been fabricated with a 0.18um Dongbu BCDMOS technology.