• Journal of the Korean Crystal Growth and Crystal Technology
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• v.6 no.2
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• pp.155-165
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• 1996

Growth of $LiNbO_3$ single crystal by Czochralski method was carried out to study the piezoelectric effects. Piezoelectric coefficients and elastic compliances of the $LiNbO_3$ single crystal were determined by the resonance method of length-extentional mode of bar resonator from the room temperature up to $100^{\circ}C$. Two dielectric constants of $LiNbO_3$ were also determined by measuring the capacitance of the plate specimen. Measured constants were piezoelectric coefficients $d_{15},d_{22},d_{31},d_{33}$ elastic compliances $s^E_{11},s^E_{33},2s^E_{13}+2s^E_{44},s^E_{14}$ and dielectric constants $K^T_{11},K^T_{33}$. As temperature increased, elastic compliances changed very slowly while piezoelectric coeffiecients and dielectric constant $K^T_{33}$ changed very rapidly. Electromechanical coupling constant of zyw ($45^{\circ}C$)-bar was as high as 0.51 in room temperature and nearly constant up to $1000^{\circ}C$. The increase of piezoelectric coefficients was mainly due to the increase of dielectric permittivity.

• Bulletin of the Korean Chemical Society
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• v.22 no.11
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• pp.1231-1235
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• 2001

Pseudotetragonal ZrO0.75S whose space group is P212121 was synthesized and the cell dimensions were a=5.110(2) $\AA$, b=5.110(7) $\AA$, and c=5.198(8) $\AA.$ The space group P212121 seems to be resulted from lowering the symmetry of cubic ZrOS structure with P213 space group by lattice distortion due to the oxygen defects. In the distorted structure, bond shortening between metal-nonmetal by reduction of cell volume and alternation of Zr-Zr distance were observed. Dielectric constant and loss data of the bulk material in temperature range -170 to 20 $^{\circ}C$ and frequency range 50 Hz to 1 MHz showed that there was dielectric transition at around -70 $^{\circ}C$ originated from the relaxation of Zr-S segment. Comparing with ZrO2 exhibited the dielectirc constants, 9.0 at room temperature, ZrO0.75S showed high dielectric constant, k = 200.2 at 100 kHz. The activation energy of relaxation time due to dielectric relaxation of Zr-S was 0.47 eV (11.3 kcal/mole). According to the impedance spectra, ZrO0.75S showed more parallel circuit character between the resistance and capacitance components at the temperature (-70 $^{\circ}C)$ that the Zr-S dielectric relaxation was observed.

• Proceedings of the KSME Conference
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• 2003.11a
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• pp.1932-1938
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• 2003

We have applied spectroscopic ellipsometry to investigate $high-{\kappa}$ dielectric thin films and correlate their optical properties with fabrication processes, in particular, with high temperature annealing. The use of high-k dielectrics such as $HfO_{2}$, $Ta_{2}O_{5}$, $TiO_{2}$, and $ZrO_{2}$ as the replacement for $SiO_{2}$ as the gate dielectric in CMOS devices has received much attention recently due to its high dielectric constant. From the characteristics found in the pseudo-dielectric functions or the Tauc-Lorentz dispersions, the optical properties such as optical band gap, polycrystallization, and optical density will be discussed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.48-48
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• 2010

In this paper, we have investigated temperature dependence of dielectric breakdown voltage at epoxy with added nano-filler(MgO), which is used as a filler of epoxy additives for HVDC(high voltage direct current) submarine cable insulating material with high thermal conductivity and restraining tree to improve electrical properties of epoxy resin in high temperature region. In order to find dispersion of the specimen, the cross sectional area of nano-composite material is observed by using the SEM(Scanning Electron Microscope) and it is conformed that each specimen is evenly distributed without the cohesion. As a result, it is confirmed that the strength of breakdown of all specimen at 50 [$^{\circ}C$] decreased more than that of the dielectric breakdown strength at room temperature. When temperature increases from 50 [$^{\circ}C$] to 100 [$^{\circ}C$], we have confirmed that breakdown strength of virgin specimen decreases, but specimens with added MgO show constant dielectric breakdown strength.

• The Korean Journal of Ceramics
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• v.2 no.2
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• pp.111-113
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• 1996

Dielectric properties at microwave frequency region of the five-layered compound $Ba_5Nb_4O_{15}$ prepared by the conventional solid state reaction method were investigated. $Ba_5Nb_4O_{15}$ has excellent microwave dielectric characteristics; ${\varepsilon}_r$=38, Q=7500 at 10 GHz, and ${\tau}_l$=+50 ppm/K. Since this compound has a high dielectric constant, high Q and sufficiently stable characteristics, it is useful for the applications at microwave frequencies.

• 한국정보디스플레이학회:학술대회논문집
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• 2000.01a
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• pp.157-158
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• 2000

In this study, to get the larger drain current of the device under the same operation condition as the conventional gate dielectric SiNx thin film transistor devices, we introduced new gate dielectric $Ta_2O_5$ thin film which has high dielectric constant $({\sim}25)$ and good electrical reliabilities. For the application for the TFT device, we fabricated the $Ta_2O_5$ gate dielectric TFT on the low-temperature-transformed polycrystalline silicon thin film using the self-aligned implantation processing technology for source/drain and gate doping. The $Ta_2O_5$ gate dielectric TFT showed better electrical performance than SiNx gate dielectric TFT because of the higher dielectric constant.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.497-501
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• 2003

In order to manufacture ceramic capacitors for the industrial electronic parts application using Tape casting method, the dielectric properties as a functions of sintering temperatures and the fabrication conditions of green sheet were investigated to consider the possibility of applications. When the mixing ratio of powder and solvent in slurry was 65:35, the uniform and dense green sheets was obtained. The dielectric constant was increased as the sintering temperature Over 94% of relative density and high were obtained to the specimens sintered at $1000^{\circ}C$. We can find that the device sintered at higher temperature than $1000^{\circ}C$ showed the relative density over 94% and the dielectric constant over 2000.

• Journal of the Korean Ceramic Society
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• v.16 no.1
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• pp.31-37
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• 1979

The middle point of composition within the system $MgO-Al_2O_3-SiO_2$ has been studied for applicability as ceramics dielectrics. A Kyul Sung Tale of high purity, magnesia clinker of Sam-wha chemical company, C.P. aluminium oxide, calcium carbonate, red lead, barium carbonate which was made into frit were used the raw materials. A number of steatite ceramics were prepared under carefully controlled condition and the water absorption, linear shrinkage, power factor, dielectric constant and dielectric loss were measured at elevated temperature. When we used magnesia clinker as flux, the quantity of this flux was 0.05mole, sintering temperature was continued for 2 hrs. at 1, 27$0^{\circ}C$. From this conditions, we could get the data whose power factor was 0.142%, water absorption was zero, linear shrinkage was 8.76%, dielectric constant was 5.63, dielectric loss was 0.00799. When we used red lead as flux, the quantity of this flux was 0.033mole and 0.066mole, sintering temperature was continued for 2hrs. at 1, 26$0^{\circ}C$. From this conditions, we could get the data whose water absorption was zero, linear shrinkage was 8.03%, and 8.48%, power factor was 0.136% and 0.062%, dielectric loss was 0.0072 and 0.0037. When we used barium carbonate made into frit as flux, the quantity of this flux was 0.02mole, sintering temperature was continued for 2hrs. at 1, 27$0^{\circ}C$. From this conditions, we could get the data whose water absoption was zero, linear shrinkage was 8.44%, power factor was 0.138%, dielectric constant was 5.69, dielectric loss was 0.0074.

• The Journal of Engineering Geology
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• v.15 no.3
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• pp.281-288
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• 2005

To evaluate a property of moisture distribution and volumetric water content on bentonite media the responses of complex dielectric constant were used which are measured by Frequency Domain Reflectometry with Vector Network Analyzer (FDR-V) system. The bentonite is widely used a barrier liner system in the waste disposal site, recently. In case of barrier liner system, generally, the coefficient of permeability should have to less than 10-7cm/sec. According to the results, the complex dielectric constants are increasing with increase the volumetric water content and temperature together. Also the variation of complex dielectric constant due to temperature gradient is confirmed that the moisture movements are increasing with the variations of temperature from high range to low range, which is represented the property of moisture distribution in the bentonite.

• Journal of the Korean Ceramic Society
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• v.32 no.7
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• pp.761-768
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• 1995

Double layered BaTiO3 thin films with high dielectric constant as well as good insulating property were prepared for the application to low voltage driving thin film electroluminescent (TFEL) device. BaTiO3 thin films were formed by rf-magnetron sputtering technique. Amorphous and polycrystalline BaTiO3 thin films were deposited at the substrate temperatures of room temperature and 55$0^{\circ}C$, respectively. Two kinds of films prepared under these conditions showed high resistivity and high dielectric constant. The figure of merit (=$\varepsilon$r$\times$Eb.d) of polycrystalline BaTiO3 thin film was very high (8.43$\mu$C/$\textrm{cm}^2$). The polycrystalline BaTiO3 showed a substantial amount of leakage current (I), under the high electric field above 0.5 MV/cm. The double layered BaTiO3 thin film, i.e., amorphous BaTiO3 layer coated polycrystalline BaTiO3 thin film, was prepared by the new stacking method and showed very good dielectric and insulating properties. It showed a high dielectric constant fo 95 and leakage current density of 25 nA/$\textrm{cm}^2$ (0.3MV/cm) with the figure of merit of 20$\mu$C/$\textrm{cm}^2$. The leakage current density in the double layered BaTiO3 was much smaller than that in polycrystalline BaTiO3 under the high electric field. The saturated brightness of the devices using double layered BaTiO3 was about 220cd/$m^2$. Threshold voltage of TFEL devices fabricated on double layered BaTiO3 decreased by 50V compared to the EL devices fabricated on amorphous BaTiO3.