• The Korean Journal of Ceramics
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• v.6 no.2
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• pp.138-142
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• 2000

Thin film $LiNbO_3$MFS (metal-ferroelectric-semiconductor) capacitor showed improved characteristics such as low interface trap density, low interaction with Si substrate, and large remanent polarization. This paper reports ferroelectric $LiNbO_3$thin films grown directly on p-type Si (100) substrates by 13.56 MHz RF magnetron sputtering system for FRAM (ferroelectric random access memory) applications. RTA (rapid thermal anneal) treatment was performed for as-deposited films in an oxygen atmosphere at $600^{\circ}C$ for 60sec. We learned from X-ray diffraction that the RTA treated films were changed from amorphous to poly-crystalline $LiNbO_3$which exhibited (012), (015), (022), and (023) plane. Low temperature film growth and post RTA treatments improved the leakage current of $LiNbO_3$films while keeping other properties almost as same as high substrate temperature grown samples. The leakage current density of $LiNbO_3$films decreased from $10^{-5}$ to $10^{-7}$A/$\textrm{cm}^2$ after RTA treatment. Breakdown electric field of the films exhibited higher than 500 kV/cm. C-V curves showed the clockwise hysteresis which represents ferroelectric switching characteristics. Calculated dielectric constant of thin film $LiNbO_3$illustrated as high as 27.9. From ferroelectric measurement, the remanent polarization and coercive field were achieved as 1.37 $\muC/\textrm{cm}^2$ and 170 kV/cm, respectively.

• Journal of the Korean Chemical Society
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• v.31 no.5
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• pp.444-451
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• 1987

The dependence of polarographic parameters on the pressure for the reduction of copper(II), cadmium(II), and zinc(II) complex ions with ethylenediamine, propylenediamine, and diethylenetriamine has been studied. In this study the dropping mercury electrode, the mercury pool electrode, and helix type of platinum wire were used as the working, the reference, and the auxilary electrode, respectively. With increasing the pressure from 1 atmosphere to 1,500 atmospheres, the reduction half-wave potentials of metal complex ions are shifted to the negative values and the diffusion currents become considerably larger, in keeping with the theory on the change of the physical properties of the electrolytic solution such as the density, the viscosity, the dielectric constant, and the electrical conductance, etc. The slope values of the logarithmic plot are increased with increasing the pressure, which indicates the more irreversible reduction. The temperature coefficients of diffusion current observed over the range of the temperature from 25$^{\circ}$C to 35$^{\circ}$C are about two percentage with increasing the pressure, therefore the polarographic reduction under the high pressure is controlled by diffusion. The linear relationships between diffusion current and concentration of metal complex ions are established over all pressure range.

• Journal of the Korean Recycled Construction Resources Institute
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• v.9 no.4
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• pp.506-513
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• 2021

The durability and safety of reinforced concrete structures significantly depend on the reinforcement conditions, concrete cover thickness, cracks, and concrete strength. There are two ways to accurately determine the information on reinforcing bars embedded in concrete - the local destructive method and the non-destructive rebar detection test. In general, the non-destructive rebar detection tests, such as the electromagnetic wave radar method, electromagnetic induction method, and radiation method, are adopted to avoid damage to the structural elements. The moisture content and temperature of concrete affect the dielectric constant, which is the electrical property of concrete, and cause interference in the non-destructive rebar detection test results. Therefore, in this study, the effects of the electromagnetic wave radar method and electromagnetic induction method have been analyzed according to the temperature and surface moisture content of concrete. Due to the technological advancement and development of equipment, the average error rate was less than 5% in the specimens at 24℃, irrespective of their operating principles. Among the tested methods, the electromagnetic induction method showed very high accuracy. The electromagnetic wave radar method indicated a relatively small error rate in the dry state than in the wet state, and exhibited a relatively high error rate at high temperatures. It was confirmed that the error could be reduced by applying the electromagnetic wave radar method when the temperature of the probe was low and in a dry state, and by using the electromagnetic induction method when the probe was in a wet state or at a high temperature.

• Journal of the Korean Chemical Society
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• v.39 no.10
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• pp.806-811
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• 1995

The electrical properties for $(Ba,Sr)_{1-x}Y_xTiO_3$(x=0.001∼0.009, BSYT) with a positive temperature coefficient of resistivity(PTCR) effect were investigated. The BSYT powder was prepared by oxalate coprecipitation method. It was found that the large PTCR effect was appeared up to 0.3 mol% and decreased above 0.5 mol% of the yttrium concentration. The plot of temperature vs. $1{\varepsilon}$m(T) above Curie temperature($T_c$) was agreed with Curie-Weiss law. The potential barrier calculated from measured resistivity and dielectric constant of specimens was high up to 0.3 mol% and reduced above 0.5 mol% of yttrium concentration as the curve of PTCR effect.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.67-67
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• 2009

Due to the scaling down of the dielectrics thickness, the leakage currents arising from electron tunneling through the dielectrics has become the major technical barrier. Thus, much works has focused on the development of high k dielectrics in both cases of memories and CMOS fields. Among the high-k materials, $Al_2O_3$ considered as good candidate has been attracting much attentions, which own some good properties as high dielectric constant k value (~9), a high bandgap (~2eV) and elevated crystallization temperature, etc. Due to the easy control of ion energy and flux, low ownership and simple structure of the inductively coupled plasma (ICP), we chose it for high-density plasma in our study. And the $BCl_3$ was included in the gas due to the effective extraction of oxygen in the form of BClxOy compound. In this study, the etch characteristic of ALD deposited $Al_2O_3$ thin film was investigated in $BCl_3/N_2$ plasma. The experiment were performed by comparing etch rates and selectivity of $Al_2O_3$ over $SiO_2$ as functions of the input plasma parameters such as gas mixing ratio, DC-bias voltage and RF power and process pressure. The maximum etch rate was obtained under 15 mTorr process perssure, 700 W RF power, $BCl_3$(6 sccm)/$N_2$(14 sccm) plasma, and the highest etch selectivity was 1.9. We used the x-ray photoelectron spectroscopy (XPS) to investigate the chemical reactions on the etched surface. The Auger electron spectroscopy (AES) was used for elemental analysis of etched surface.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.207-207
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• 2012

Si quantum dot (QD) imbedded in a $SiO_2$ matrix is a promising material for the next generation optoelectronic devices, such as solar cells and light emission diodes (LEDs). However, low conductivity of the Si quantum dot layer is a great hindrance for the performance of the Si QD-based optoelectronic devices. The effective doping of the Si QDs by semiconducting elements is one of the most important factors for the improvement of conductivity. High dielectric constant of the matrix material $SiO_2$ is an additional source of the low conductivity. Active doping of B was observed in nanometer silicon layers confined in $SiO_2$ layers by secondary ion mass spectrometry (SIMS) depth profiling analysis and confirmed by Hall effect measurements. The uniformly distributed boron atoms in the B-doped silicon layers of $[SiO_2(8nm)/B-doped\;Si(10nm)]_5$ films turned out to be segregated into the $Si/SiO_2$ interfaces and the Si bulk, forming a distinct bimodal distribution by annealing at high temperature. B atoms in the Si layers were found to preferentially substitute inactive three-fold Si atoms in the grain boundaries and then substitute the four-fold Si atoms to achieve electrically active doping. As a result, active doping of B is initiated at high doping concentrations above $1.1{\times}10^{20}atoms/cm^3$ and high active doping of $3{\times}10^{20}atoms/cm^3$ could be achieved. The active doping in ultra-thin Si layers were implemented to silicon quantum dots (QDs) to realize a Si QD solar cell. A high energy conversion efficiency of 13.4% was realized from a p-type Si QD solar cell with B concentration of $4{\times}1^{20}atoms/cm^3$. We will present the diffusion behaviors of the various dopants in silicon nanostructures and the performance of the Si quantum dot solar cell with the optimized structures.

• Journal of Advanced Navigation Technology
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• v.23 no.2
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• pp.172-178
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• 2019

This paper has designed, fabricated, and analyzed the passive devices realized using low temperature co-fired ceramic (LTCC) multi layer substrates by dividing into the shrinkage process and the non-shrinkage process. Using two types of ceramic materials with dielectric constant 7 or 40, we have fabricated the same shape of various elements in 2 different processes and compared the characteristics. For the substrate of dielctric constant 40, compared with the shrinkage process which has 17% shrink in the X and Y directions with 36% shrink in the Z direction, the non-shrinkage process has 43% shrink in the Z direction without shrink in the X and Y directions, so high dimensional accuracy and surface flatness can be obtained. The inductances and capacitances of the fabricated elements are estimated from measurement using empirical analysis equations of parameters and implemented as a design library. Depending on the substrate and the process, the inductance and capacitance depending on the turn number of winding and unit area have been measured, and empirical polynomials are proposed to predict element values.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.9
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• pp.702-710
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• 2012

Eco-friendly $(Na,K)NbO_3$ (NKN)-based piezoelectric ceramic materials were fabricated by conventional ceramic method for shear mode piezoelectric energy harvesting application. $NKN-LiTaO_3$ (LT) based compositions were adopted for the high $d_{15}{\times}g_{15}$ which is proportional to harvested energy density. The composition $0.935(Na_{0.535}K_{0.485})NbO_3-0.065LiTaO_3$ was found to be lie on the boundary of tetragonal and orthorhombic phases. With reducing Ta content, the dielectric constant decreased gradually while maintaining high $d_{15}$, which resulted in increased $d_{15}{\times}g_{15}$. The composition $0.935(Na_{0.535}K_{0.485})NbO_3-0.065Li(Nb_{0.990}Ta_{0.010})O_3$ was found to possess excellent piezoelectric and electromechanical properties ($d_{15}{\times}g_{15}=29\;pm^2/N$, $d_{15}$ = 417 pC/N, $k_{15}$ = 0.55), and high curie temperature ($T_c=455^{\circ}C$).

• Journal of the Korea Institute of Information and Communication Engineering
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• v.13 no.7
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• pp.1267-1271
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• 2009

In this paper, a diplexer circuit to separate GSM from CDMA band is designed using a LTCC (Low Temperature Cofired Ceramic) multi-layer technology. In order to increase a integration capability of the diplexer, it is designed using 3-dimensional (3-D) multi-layer compact inductor and capacitors in e-layer LTCC substrate with a relative dielectric constant of 7. In order to achieve high selectivity of the bands, a shunt capacitor and inductor are designed in the high-pass filter (HPF) and low-pass filter (LPF), respectively. The size of the fabricated diplexer including CPW pads is 3,450 ${\times}$4,000 ${\times}$694 ${\mu}m^3$An insertion loss (IL) and return loss in GSM band are less than -1.35dB and more than -5.66dB,respectively. In the case of CDMA band, the IL of -1.54dBandRLof above -9.30dBare archived.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.173-173
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• 2010

$Bi_4Ti_3O_{12}$ ($B_4T_3$) is a unique ferroelectric material that has a relatively high dielectric constant, high Curie temperature, high breakdown strength, and large spontaneous polarization. As a result this material has been widely studied for many applications, including nonvolatile ferroelectric random memories, microelectronic mechanical systems, and nonlinear-optical devices. Several reports have appeared on the use of Mn dopants to improve the electrical properties of $B_4T_3$ thin films. Mn ions have frequently been used for this purpose in thin films and multilayer capacitors in situations where intrinsic oxygen vacancies are the major defects. However, no systematic study of the optical properties of $B_4T_3$ films has appeared to date. Here, we report optical data for these films, determined by spectroscopic ellipsometry (SE). We also report the effects of thermal annealing and Mn doping on the optical properties. The SE data were analyzed using a multilayer model that is consistent with the original sample structure, specifically surface roughness/$B_4T_3$ film/Pt/Ti/$SiO_2$/c-Si). The data are well described by the Tauc-Lorentz dispersion function, which can therefore be used to model the optical properties of these materials. Parameters for reconstructing the dielectric functions of these films are also reported. The SE data show that thermal annealing crystallizes $B_4T_3$ films, as confirmed by the appearance of $B_4T_3$ peaks in X-ray diffraction patterns. The bandgap of $B_4T_3$ red-shifts with increasing Mn concentration. We interpret this as evidence of the existence deep levels generated by the Mn transition-metal d states. These results will be useful in a number of contexts, including more detailed studies of the optical properties of these materials for engineering high-speed devices.