• Transactions of Materials Processing
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• v.29 no.1
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• pp.44-48
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• 2020

Aluminum nitride (AlN), as a substrate material in electronic packaging, has attracted considerable attention over the last few decades because of its excellent properties, which include high thermal conductivity, a coefficient of thermal expansion that matches well with that of silicon, and a moderately low dielectric constant. AlN films with c-axis orientation and thermal conductivity characteristics were deposited by using Pulsed Laser Deposition (PLD). The epitaxial AlN films were grown on sapphire (c-Al₂O₃) single crystals by PLD with AlN target and Y₂O₃ doped AlN target. A comparison of different targets associated with AlN films deposited by PLD was presented with particular emphasis on thermal conductivity properties. The quality of AlN films was found to strongly depend on the growth temperature that was exerted during deposition. AlN thin films deposited using Y₂O₃-AlN targets doped with sintering additives showed relatively higher thermal conductivity than while using pure AlN targets. AlN thin films deposited at 600℃ were confirmed to have highly c-axis orientation and thermal conductivity of 39.413 W/mK.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.14 no.9
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• pp.931-935
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• 2003

A multilayer two-stage LC bandpass filter using low-temperature cofired-ceramic(LTCC) is proposed in this paper. The proposed bandpass filter is composed of two ceramic substrates with different dielectric constant instead of single ceramic material from top to bottom layer. Inductive elements are designed in a low permitivity ceramic layer to reduce parasitic effects and loss, while capacitive elements are designed in a high permitivity ceramic layer for size reduction. The proposed filter has 950 MHz center &equency, 118 MHz tractional bandwidth, and 3.5 dB insertion loss. And, the total size of this filter is 2.5${\times}$2.5${\times}$l.4mm$^3$. The performance of filter is analyzed by changing coupling capacitance between each resonator.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2008.10a
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• pp.632-635
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• 2008

In this paper, a diplexer circuit to separate GSM/CDMA band is designed using a LTCC (Low Temperature Cofired Ceramic) multi-layer technology. In order to increase a integration capability of the diplexer, it is designed in 6-layer LTCC sunstrate with a elative dielectric constant of 7.2 using 3-dimensional (3-D) multi-layer inductors and capacitors. The size of the designed diplexer including CB-CPW pads is $3,450{\times}4,000{\times}600{\mu}m^3$. An insertion loss (IL) and return loss of GSM band are less than -0.23dB and -10dB, respectively. In the case of CDMA band, the IL of -0.53dB and RL of below -10dB are archieved.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.6
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• pp.460-464
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• 2003

The barium strontium titannate ((Ba,Sr)TiO$_3$:BST) thin films were etched in an inductively coupled plasma (ICP) as a function of CF$_4$/Ar gas mixing ratio. Under CF$_4$(20%)/Ar(80%), the maximum etch rate of the BST films was 400 $\AA$/min. Etching products were redeposited on the surface of BST and then the nature of crystallinity were varied. Therefore, we investigated the etched surface of BST by X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM). The plasma damages were evaluated in terms of leakage current density by Agilent 4145C and dielectric constant by HP 4192 impedance analyzer. After the BST thin films exposed in the plasma, the leakage current density and roughness increases. After annealing at 600 $^{\circ}C$ for 10 min in $O_2$ ambient, the leakage current density, roughness and nonvolatile etch byproducts reduced. From this results, the plasma induced damages were recovered by annealing process owing to the relaxation of lattice mismatches by Ar ions and the desorption of metal fluorides in high temperature.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.05a
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• pp.152-155
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• 2006

Carbon nitride ($CN_X$) films were prepared by reactive RF magnetron sputtering system at various deposition conditions and the C-V characteristics of MIS(metal - insulator - semiconductor) capacitors that have the structures of Al/$CN_x$/p-Si/Al and Al/$CN_x$/$Si_3N_4$/p-Si/Al were investigated. The resistivity of carbon nitride was above $2.40{\times}10^8{\Omega}{\cdot}cm$ at room temperature. The C-V plot showed a typical capacitance-voltage characteristics of semiconductor insulating layers, while it showed hysterisis due to interface charges. Amorphous carbon nitride (a-$CN_x$) films, that have relatively high resistivity and low dielectric constant could be useful as interlayer insulator materials of VLSI(very large-scale integration) and ULSI(ultra large-scale integration).

• Journal of the Korean Ceramic Society
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• v.20 no.1
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• pp.25-30
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• 1983

This experiment was studied in the system of (1-x) CaO MgO $2SiO-Al_2O_3$ to investigate forming of solid solution. The technique empolyed was the well known water-quenching method. Differential thermal analysis of the each glass water quenched indicated that under 30 mole% $Al_2O_3$ was lowered with increasing of the amount of $Al_2O_3$ It was supposed by X-ray diffraction patterns of each specimen sintered at various temperature that only solid solution was formed under the 30mole % $Al_2O_3$ compositions solid solution and anorthite were formed at the 20mole% $Al_2O_3$ composition anorthite solid solution and spinel$(MgAl_2O_4)$ were formed over the 40mole% $Al_2O_3$ compositions. The maximum density and thermal expanison coefficient was 2.89g/cm 7.74x106./C$^{\circ}$ respectively in the composi-tion of 10 mole% $Al_2O_3$ . All the specimens showed linear thermal expansion behavior. Microhardness was as high as 850kg/nm2 in the composition of 5, 10, 20 mole % $Al_2O_3$ and dielectric constant was 7.3-6.9.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.143-144
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• 2005

Recently, MIM(metal-insulator-metal) capacitor is one of the essential device for DRAM device. In this thesis, $Al_2O_3$ thin film which has a relatively high dielectric constant was deposited by ALD(atomic layer deposition) using MPTMA and $H_2O$ source. Deposition temperature of $Al_2O_3$ thin film was $200^{\circ}C$ and its thickness was 300 ${\AA}$. $RuO_2$ bottom electrode was deposited by RF-magnetron sputtering using $RuO_2$ target. The physical characteristics of $Al_2O_3$ films were investigated by AES, TEM and Ellipsometry. Electrical characteristics were analyzed by C-V and I-V measurement.

• Bulletin of the Korean Chemical Society
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• v.9 no.1
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• pp.1-4
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• 1988

Rates of solvolysis of trans-[Co$(N-eten)_2Cl_2$]$^+$ have been investigated using spectrophotometric method at various pressures and temperatures in the mixtures of water with the t-butyl alcohol which possesses a high structure inducing capacity in water. The values of ${\Delta}V^{\neq}$ obtained from pressure effect on the rate constants were 2.55∼ 5.83 $cm^3mol^{-1}$. These values were discussed in terms of dissociative mechanism. Extrema found in the variation of ${\Delta}H^{\neq}$ and ${\Delta}S^{\neq}$ with solvent composition correlated with extrema in the variation of the physical properties of the mixtures. The logarithms of rate constants correlated linearly with both Grunwald-Winstein parameter and the reciprocal of dielectric constant ($Ds^{-1}$). The gradient, m of Grunwald-Winstein plot for the trans-[Co$(N-eten)_2Cl_2$]$^+$ was 0.09, which is significantly lower than those for the other cobalt (Ⅲ)-dichloro complexes. It was suggested that the reaction is an Id mechanism with long extension of Co-Cl bond in the transition state, as found for the C-Cl bond in the transition state for the solvolysis of t-butyl chloride.

• Journal of Ceramic Processing Research
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• v.13 no.spc2
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• pp.428-432
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• 2012

Polyamidimide (PAI)-colloidal silica (CS) nanohybrid films were synthesized by an advanced sol-gel process. The synthesized PAI-CS hybrid films have a uniform and stable chemical bonding and there is no interfacial defects observed by TEM. The thermal degradation ratio of PAI-CS (10 wt%) hybrid films is delayed by 100 ℃ compared with pure PAI sample determined by on set temperature range in TGA. The dielectric constant of PAI-CS (10 wt%) hybrid films decreases with increasing CS content up to about 5 wt% but increases at higher CS content, which is not explained simply by effective medium therories (EMT). The duration time of PAI-CS (10 wt%) hybrid coil is 38 sec, which is very longer than that of pure PAI coil sample. The PAI-CS (10 wt%) hybrid film has a higher breakdown voltage resistance than the pure PAI film at surge environment and exhibits superior heat resistance. The PAI-CS (10 wt%) sample shows the advanced and stable thermal emission properties in transformer module compared with the pure PAI sample. This result illustrates that the advanced thermal conductivity and expansion properties of PAI-CS sample in the case of appropriate sol-gel processes brings the stable thermal emission in transformer system. Therefore, new PAI-CS hybrid samples with such stable thermal emission properties are expected to be used as a high functional coating application in ET, IT and electric power products.

• The Korean Journal of Ceramics
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• v.6 no.2
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• pp.138-142
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• 2000

Thin film $LiNbO_3$MFS (metal-ferroelectric-semiconductor) capacitor showed improved characteristics such as low interface trap density, low interaction with Si substrate, and large remanent polarization. This paper reports ferroelectric $LiNbO_3$thin films grown directly on p-type Si (100) substrates by 13.56 MHz RF magnetron sputtering system for FRAM (ferroelectric random access memory) applications. RTA (rapid thermal anneal) treatment was performed for as-deposited films in an oxygen atmosphere at $600^{\circ}C$ for 60sec. We learned from X-ray diffraction that the RTA treated films were changed from amorphous to poly-crystalline $LiNbO_3$which exhibited (012), (015), (022), and (023) plane. Low temperature film growth and post RTA treatments improved the leakage current of $LiNbO_3$films while keeping other properties almost as same as high substrate temperature grown samples. The leakage current density of $LiNbO_3$films decreased from $10^{-5}$ to $10^{-7}$A/$\textrm{cm}^2$ after RTA treatment. Breakdown electric field of the films exhibited higher than 500 kV/cm. C-V curves showed the clockwise hysteresis which represents ferroelectric switching characteristics. Calculated dielectric constant of thin film $LiNbO_3$illustrated as high as 27.9. From ferroelectric measurement, the remanent polarization and coercive field were achieved as 1.37 $\muC/\textrm{cm}^2$ and 170 kV/cm, respectively.