• Title/Summary/Keyword: High-Power Switch

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High-Power-Factor Boost Rectifier with a Passive Energy Recovery Snubber (에너지재생 수동스너버를 갖는 고역율 부스트 정류기)

  • 김만고;백승호
    • Proceedings of the KIPE Conference
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    • 1998.07a
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    • pp.428-432
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    • 1998
  • A passive energy recovery snubber for high-power-factor boost rectifier, in which the main switch is implemented with a MOSFET, is described in terms of the equivalent circuits that are operational during turn-on and turn-off sequences. The main switch combined with proposed snubber can be turned on with zero current and turned off at limited voltage stress. The high-power-factor boost rectifier with proposed snubber is implemented, and the experimental results are presented to confirm the validity of proposed snubber.

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Characterization of the Hydrogen Reservoir for a High Power Gas Switch

  • Lee, B.J.;Park, S.S.;Kim, S.H.;Kwon, S.J.;Jang, S.D.;Joo, Y.
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.08a
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    • pp.261-261
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    • 2012
  • This paper presents the understandings carried out for the installation of the hydrogen reservoir of the multi-gap pseudospark switch under developing for the accelerator applications. As a cold cold cathode switch, the pseudospark switch could replace the thyratron switch which has hot cathode and being used well currently in the high power field such as laser and accelerator applications. Especially in the klystron modulator, the key component is a switch which mostly defines the jitter and the instability of the modulator system. To get the less jitter and the instability, we need to find proper range of the pressure for the gas discharge inside gas switch. This could be achieved by the understanding of the characteristic of the nonevaporable getter (NEG) which is used as a hydrogen reservoir for the switch. Therefore we verified the characteristics of the NEG (St 172, Saes) and its installation in the switch. Finally we controlled the getter to find best pressure point for the pseudospark switch.

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Development of the 120kV/70A High Voltage Switching Circuit with MOSFETs Operated by Simple Gate Drive Unit (120kV/70A MOSFETs Switch의 구동회로 개발)

  • 송인호;최창호
    • The Transactions of the Korean Institute of Power Electronics
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    • v.8 no.1
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    • pp.24-29
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    • 2003
  • A 120kV/70A high voltage switch has been installed at Korea Atomic Energy Research Institute(KAERI) in Taejon to supply power with Korea Superconducting Tokamak Advanced Research(KSTAR) Neutral Beam Injection(NBI) system. NBI system requires fast cutoff of the flower supply voltage for protection of the grid when arc detected and fast turn-on the voltage for sustaining the beam current. Therefore the high voltage switch and arc current detection circuit are important part of the NBI power supply. There are much need for high voltage solid state switches in NBI system and a broad area of applications. This switch consisted of 100 series connected MOSFETs and adopted the proposed simple and reliable gate drive circuit without bias supply. Various results taken during the commissioning phase with a 100kW resistive load and NBI source arc shown. This paper presents the detailed design of 120kV/70A high voltage MOSFETs switch and simple gate drive circuit. Problems with the high voltage switch and gate driver during thefabrication and test and solutions are also presented.

A Novel Soft-Switching Two-Switch Flyback Converter with a Wide Operating Range and Regenerative Clamping

  • Kim, Marn-Go;Jung, Young-Seok
    • Journal of Power Electronics
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    • v.9 no.5
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    • pp.772-780
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    • 2009
  • A novel soft-switching two-switch flyback converter is proposed in this paper. This converter is composed of two active power switches, a flyback transformer, a blocking diode, and two passive regenerative clamping circuits. The proposed converter has the advantages of a low cost circuit configuration, a simple control scheme, a high efficiency, and a wide operating range. The circuit topology, analysis, design considerations, and experimental results of the new flyback converter are presented.

3:1 Bandwidth Switch Module by Using GaAs PH Diode (GaAs PIN Diode를 이용한 3:1 대역폭 스위치 모듈)

  • 정명득;이경학;박동철
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.13 no.5
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    • pp.451-458
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    • 2002
  • Absorptive type SP3T(Single Pole Three Throw) and SP8T switch modules over the 6-18 GHz are designed and fabricated. The epitaxial structure of GaAs PIN diode for switch modules are designed for low loss and high power capability. The maximum input power of SP3T and SP8T switch modules are 2 W and 1 W, respectively. The switching time with driver circuit is less than 130 nsec. The maximum insertion loss of SP3T switch module and SP8T module shows 2.8 dB and 4.2 dB, respectively. The isolation between input port and output port is more than 55 dB. Two switch modules for electronic warfare system have passed the environment tests of the related test items.

Analysis and Implementation of a New Single Switch, High Voltage Gain DC-DC Converter with a Wide CCM Operation Range and Reduced Components Voltage Stress

  • Honarjoo, Babak;Madani, Seyed M.;Niroomand, Mehdi;Adib, Ehsan
    • Journal of Power Electronics
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    • v.18 no.1
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    • pp.11-22
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    • 2018
  • This paper presents a single switch, high step-up, non-isolated dc-dc converter suitable for renewable energy applications. The proposed converter is composed of a coupled inductor, a passive clamp circuit, a switched capacitor and voltage lift circuits. The passive clamp recovers the leakage inductance energy of the coupled inductor and limits the voltage spike on the switch. The configuration of the passive clamp and switched capacitor circuit increases the voltage gain. A wide continuous conduction mode (CCM) operation range, a low turn ratio for the coupled inductor, low voltage stress on the switch, switch turn on under almost zero current switching (ZCS), low voltage stress on the diodes, leakage inductance energy recovery, high efficiency and a high voltage gain without a large duty cycle are the benefits of this converter. The steady state operation of the converter in the continuous conduction mode (CCM) and discontinuous conduction mode (DCM) is discussed and analyzed. A 200W prototype converter with a 28V input and a 380V output voltage is implemented and tested to verify the theoretical analysis.

Two-Switch Auxiliary Resonant DC Link Snubber-Assisted Three-Phase Soft Switching PWM Sinewave Power Conversion System with Minimized Commutation Power Losses

  • Nagai, Shinichiro;Sato, Shinji;Ahmed, Tarek;Nakaoka, Mutsuo
    • Journal of Power Electronics
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    • v.3 no.4
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    • pp.249-258
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    • 2003
  • This paper presents a high-efficient and cost effective three-phase AC/DC-DC/AC power conversion system with a single two-switch type active Auxiliary Resonant DC Link (ARDCL) snubber circuit, which can minimize the total power dissipation. The active ARDCL snubber circuit is proposed in this paper and its unique features are described. Its operation principle in steady-state is discussed for the three phase AC/DC-DC/AC converter, which is composed of PWM rectifier as power factor correction (PFC) converter, sinewave PWM inverter. In the presented power converter system not only three-phase AC/DC PWM rectifier but also three-phase DC/AC inverter can achieve the stable ZVS commutation for all the power semiconductor devices. It is proved that the proposed three-phase AC/DC-DC/AC converter system is more effective and acceptable than the previous from the cost viewpoint and high efficient consideration. In addition, the proposed two-switch type active auxiliary ARDCL snubber circuit can reduce the peak value of the resonant inductor injection current in order to maximize total system actual efficiency by using the improved DSP based control scheme. Moreover the proposed active auxiliary two-switch ARDCL snubber circuit has the merit so that there is no need to use any sensing devices to detect the voltage and current in the ARDCL sunbber circuit for realizing soft-switching operation. This three-phase AC/DC-DC/AC converter system developed for UPS can achieve the 1.8% higher efficiency and 20dB lower conduction noise than those of the conventional three-phase hard-switching PWM AC/DC-DC/AC converter system. It is proved that actual efficiency of the proposed three-phase AC/DC-DC/AC converter system operating under a condition of soft switching is 88.7% under 10kw output power.

High Frequency Inverter for Induction Heating with Multi-Resonant Zero Current Switching (다중공진 영전류 스위칭을 이용한 고주파 유도가열용 인버터)

  • Ra, B.H.;Suh, K.Y.;Lee, H.W.;Kim, K.T.
    • Proceedings of the KIEE Conference
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    • 2002.06a
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    • pp.38-40
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    • 2002
  • In the case of conventional high frequency inverter, with damage of switch by surge voltage when switch gets into compulsion extinction by load accident and so on because reactor is connected by series to switch, or there was problem of conduction loss by reactor's resistivity component, Also, it has controversial point of that can not ignore conduction loss of switch in complete work kind action of soft switching. In this paper, as high frequency induction heating power supply, we propose half bridge type multi resonance soft switching high frequency inverter topology that can realize high amplitude operation of load current with controlling switch current by multiplex resonance, mitigating surge voltage when switch gets into compulsion extinction and to be complete operation of zero current switching by opposit parallel connected reactor to inverter switch. and do circuit analysis for choice of most suitable circuit parameter of circuit

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High Isolation and Linearity MMIC SPDT Switch for Dual Band Wireless LAN Applications (이중대역 무선랜 응용을 위한 높은 격리도와 선형성을 갖는 MMIC SPDT 스위치)

  • Lee, Kang-Ho;Koo, Kyung-Heon
    • Journal of the Institute of Electronics Engineers of Korea TC
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    • v.43 no.1 s.343
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    • pp.143-148
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    • 2006
  • This paper presents a high isolation and power-handling single-pole double-throw(SPDT) switch for dual band wireless LAN applications. The switch circuit has asymmetric topology which uses stacked-gate to have high power-handling and isolation for the Tx path. The proposed SPDT switch has been designed with optimum gate-width, bias, and number of stacked-gate FET. This SPDT switch has been implemented with $0.25{\mu}m$ GaAs pHEMT process which has Gmmax of 500mS/mm and fmax of 150GHz. The designed SPDT switch has the measured insertion loss of better than 0.9dB and isolation of better than 40dB for the Tx path and 25dB for the Rx path and the high power handling capability with PldB of about 23dBm for control voltage of -3/0V. The fabricated SPDT switch chip size is $1.8mm{\times}1.8mm$.

New Circuit Topology of Single-Ended Soft-Switching PWM High Frequency Inverter and Its Performance Evaluations

  • Deguchi Y.;Moisseev S.;Nakaoka M.;Hirota I.;Yamashita H.;Omori H.;Terai H.
    • Proceedings of the KIPE Conference
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    • 2001.10a
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    • pp.247-250
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    • 2001
  • This paper presents a simple and cost effective circuit topology of single-ended type high frequency quasi-resonant PWM inverter using IGBTs, which can operate under wide soft switching operation range based on ZCS for main power switch as compared with a conventional active voltage-clamped ZVS-PWM high frequency quasi-resonant inverter developed previously. In principle, this new circuit topology can efficiently operate under a constant frequency PWM control-based power regulation scheme. In particular, it is noted that the zero current soft switching (ZCS) commutation can achieve for the main active power switch. On the other hand, the zero voltage soft switching (ZVS) commutation can also achieve for the auxiliary active power switch. The operating principle of this high-frequency Inverter treated here and its power regulation characteristics are illustrated on the basis of the simulation and feasible experimental results.

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