• Title/Summary/Keyword: High vacuum standard

Search Result 69, Processing Time 0.024 seconds

Improvement of Starting Performance in Supersonic Exhaust Diffuser with Second Throat for High Altitude Simulation (2차목에 의한 고고도 모사용 초음속 디퓨져 시동성능 향상)

  • Park, Sung-Hyun;Park, Byung-Hoon;Lim, Ji-Hwan;Yoon, Woong-Sup
    • Proceedings of the Korean Society of Propulsion Engineers Conference
    • /
    • 2008.05a
    • /
    • pp.321-327
    • /
    • 2008
  • Performance characteristics of the axi-symmetric supersonic exhaust diffuser (SED) with a second throat are numerically investigated. Computational strategy repeats those for a straight exhaust diffuser with zero-secondary flows. Renolds-Average Navier-Stokes equations with a standard ${\kappa}-{\varepsilon}$ turbulence model incorporated with standard wall function are solved to simulate the diffusing evolutions of the nozzle plume. The methodology is validated with accuracy. To predict the improvement of starting performance by second throat diffuser, diffuser characteristic curve due to the SED equipped with the second throat is speculated with respect to that of a straight area type as a function of nozzle stagnation pressure. Principal physics caused by the of the second throst is also addressed in terms of a second throat area ratio.

  • PDF

Development of magnetron sputtering system for Al thin film decomposition with high uniformity (고균일 Al 박막 증착을 위한 magnetron sputtering system 개발)

  • Lee, J.H.;Hwang, D.W.
    • Journal of the Korean Vacuum Society
    • /
    • v.17 no.2
    • /
    • pp.165-169
    • /
    • 2008
  • It is very important to decompose uniformly the metal film in semiconductor devices process. The thickness uniformity of the ITO film by standard magnetron sputtering system are about $\pm4%\sim\pm5%$ and the center of the wafer is more thick than the edge of the wafer. We designed and made the discharge electrode structure and controlled the direction of sputtering materials in magnetron sputtering system. The thickness uniformity are increased to $\pm0.8\sim1.3%$ in 4" wafer using the new sputtering gun in magnetron sputtering system. In wafer to wafer thickness uniformity, $\pm$5.3% are increased to $\pm$1.5% using the new sputtering gun. The thickness uniformity of the Al film are about $\pm$1.0% using the new sputtering gun in magnetron sputtering system.

CsX+ SNMS의 Matrix Effect 감소연구

  • 문환구;김동원;한철현;김영남;심태언
    • Proceedings of the Korean Vacuum Society Conference
    • /
    • 1992.02a
    • /
    • pp.17-18
    • /
    • 1992
  • SIMS is an indispensable surface analysis instrument in trace element depth p profiling because of high detection sensitivity and excellent depth r resolution, however, it requires standard sample to do quantitative analysis d due to matrix effect depending on the species of impurities and sample m matricies and on the sputtering rates. A Among the SNMS technology developed to supply the deficiency, we researched i into CsX+ SNMS which improved the resul t quanti tati vely wi thout any extra epuipments. So basic SNMS functions were confirmed through matrix element composition rate a analysis using Si02 layer etc. and adaptability to trace element c concentration analysis was tried. For that purpose we compared SIMS depth profile data for Boron which presented s strong matrix effect on account of Fluorin existence after BF2 ion implantation on silicon substrate with SNMS data. d dynamic range were investigated. A After these experements we concluded that CsX+ SNMS reduced matrix effect and we could apply it to profile impurity elements.

  • PDF

Research of Matrix Effect Reduction of $CsX^+$ SNMS ($CsX^+$ SNMS의 Matrix Effect 감소연구)

  • 문환구;김동원;한철현;김영남;심태언
    • Journal of the Korean Vacuum Society
    • /
    • v.1 no.1
    • /
    • pp.115-120
    • /
    • 1992
  • SIMS is an indispensable surface analysis instrument in trace element depth profiling because of high detection sensitivity and excellent depth resolution, however, it requires a standard sample to do quantitative analysis due to matrix effect depending on the species of impurities and sample matricies and on the sputtering rates. Among the SNMS technology developed to supply the deficiency, we researched into CsX+ SNMS which improved the result quantitatively without any extra epuipments. So basic SNMS functions were confirmed through matrix element composition rate analysis using Siq layer etc., and adaptability to trace element concentration alaysis was tried. For that purpose we compared SIMS depth profile data for Boron which presented strong matrix effect on account of Fluorin existence after BF2 ion implantation on silicon substrate with SNMS data. Also detection limit and dynamic range were investigated. After these experements we concluded that CsX+ SNMS reduced matrix effect and we could apply it to profile impurity elements.

  • PDF

GPU Based Feature Profile Simulation for Deep Contact Hole Etching in Fluorocarbon Plasma

  • Im, Yeon-Ho;Chang, Won-Seok;Choi, Kwang-Sung;Yu, Dong-Hun;Cho, Deog-Gyun;Yook, Yeong-Geun;Chun, Poo-Reum;Lee, Se-A;Kim, Jin-Tae;Kwon, Deuk-Chul;Yoon, Jung-Sik;Kim3, Dae-Woong;You, Shin-Jae
    • Proceedings of the Korean Vacuum Society Conference
    • /
    • 2012.08a
    • /
    • pp.80-81
    • /
    • 2012
  • Recently, one of the critical issues in the etching processes of the nanoscale devices is to achieve ultra-high aspect ratio contact (UHARC) profile without anomalous behaviors such as sidewall bowing, and twisting profile. To achieve this goal, the fluorocarbon plasmas with major advantage of the sidewall passivation have been used commonly with numerous additives to obtain the ideal etch profiles. However, they still suffer from formidable challenges such as tight limits of sidewall bowing and controlling the randomly distorted features in nanoscale etching profile. Furthermore, the absence of the available plasma simulation tools has made it difficult to develop revolutionary technologies to overcome these process limitations, including novel plasma chemistries, and plasma sources. As an effort to address these issues, we performed a fluorocarbon surface kinetic modeling based on the experimental plasma diagnostic data for silicon dioxide etching process under inductively coupled C4F6/Ar/O2 plasmas. For this work, the SiO2 etch rates were investigated with bulk plasma diagnostics tools such as Langmuir probe, cutoff probe and Quadruple Mass Spectrometer (QMS). The surface chemistries of the etched samples were measured by X-ray Photoelectron Spectrometer. To measure plasma parameters, the self-cleaned RF Langmuir probe was used for polymer deposition environment on the probe tip and double-checked by the cutoff probe which was known to be a precise plasma diagnostic tool for the electron density measurement. In addition, neutral and ion fluxes from bulk plasma were monitored with appearance methods using QMS signal. Based on these experimental data, we proposed a phenomenological, and realistic two-layer surface reaction model of SiO2 etch process under the overlying polymer passivation layer, considering material balance of deposition and etching through steady-state fluorocarbon layer. The predicted surface reaction modeling results showed good agreement with the experimental data. With the above studies of plasma surface reaction, we have developed a 3D topography simulator using the multi-layer level set algorithm and new memory saving technique, which is suitable in 3D UHARC etch simulation. Ballistic transports of neutral and ion species inside feature profile was considered by deterministic and Monte Carlo methods, respectively. In case of ultra-high aspect ratio contact hole etching, it is already well-known that the huge computational burden is required for realistic consideration of these ballistic transports. To address this issue, the related computational codes were efficiently parallelized for GPU (Graphic Processing Unit) computing, so that the total computation time could be improved more than few hundred times compared to the serial version. Finally, the 3D topography simulator was integrated with ballistic transport module and etch reaction model. Realistic etch-profile simulations with consideration of the sidewall polymer passivation layer were demonstrated.

  • PDF

Full validation of high-throughput bioanalytical method for the new drug in plasma by LC-MS/MS and its applicability to toxicokinetic analysis

  • Han, Sang-Beom
    • Proceedings of the Korean Society of Toxicology Conference
    • /
    • 2006.11a
    • /
    • pp.65-74
    • /
    • 2006
  • Modem drug discovery requires rapid pharmacokinetic evaluation of chemically diverse compounds for early candidate selection. This demands the development of analytical methods that offer high-throughput of samples. Naturally, liquid chromatography / tandem mass spectrometry (LC-MS/MS) is choice of the analytical method because of its superior sensitivity and selectivity. As a result of the short analysis time(typically 3-5min) by LC-MS/MS, sample preparation has become the rate- determining step in the whole analytical cycle. Consequently tremendous efforts are being made to speed up and automate this step. In a typical automated 96-well SPE(solid-phase extraction) procedure, plasma samples are transferred to the 96-well SPE plate, internal standard and aqueous buffer solutions are added and then vacuum is applied using the robotic liquid handling system. It takes only 20-90 min to process 96 samples by automated SPE and the analyst is physically occupied for only approximately 10 min. Recently, the ultra-high flow rate liquid chromatography (turbulent-flow chromatography)has sparked a huge interest for rapid and direct quantitation of drugs in plasma. There is no sample preparation except for sample aliquotting, internal standard addition and centrifugation. This type of analysis is achieved by using a small diameter column with a large particle size(30-5O ${\mu}$m) and a high flow rate, typically between 3-5 ml/min. Silica-based monolithic HPLC columns contain a novel chromatographic support in which the traditional particulate packing has been replaced with a single, continuous network (monolith) of pcrous silica. The main advantage of such a network is decreased backpressure due to macropores (2 ${\mu}$m) throughout the network. This allows high flow rates, and hence fast analyses that are unattainable with traditional particulate columns. The reduction of particle diameter in HPLC results in increased column efficiency. use of small particles (<2 urn), however, requires p.essu.es beyond the traditional 6,000 psi of conventional pumping devices. Instrumental development in recent years has resulted in pumping devices capable of handling the requirements of columns packed with small particles. The staggered parallel HPLC system consists of four fully independent binary HPLC pumps, a modified auto sampler, and a series of switching and selector valves all controlled by a single computer program. The system improves sample throughput without sacrificing chromatographic separation or data quality. Sample throughput can be increased nearly four-fold without requiring significant changes in current analytical procedures. The process of Bioanalytical Method Validation is required by the FDA to assess and verify the performance of a chronlatographic method prior to its application in sample analysis. The validation should address the selectivity, linearity, accuracy, precision and stability of the method. This presentation will provide all overview of the work required to accomplish a full validation and show how a chromatographic method is suitable for toxirokinetic sample analysis. A liquid chromatography/tandem mass spectrometry (LC-MS/MS) method developed to quantitate drug levels in dog plasma will be used as an example of tile process.

  • PDF

Synthesis of β-SiC Powder using a Recycled Graphite Block as a Source (그라파이트 블록을 원료로써 재활용한 β-SiC 분말 합성)

  • Nguyen, Minh Dat;Bang, Jung Won;Kim, Soo-Ryoung;Kim, Younghee;Jung, Eunjin;Hwang, Kyu Hong;Kwon, Woo-Teck
    • Resources Recycling
    • /
    • v.26 no.1
    • /
    • pp.16-21
    • /
    • 2017
  • This paper relates to the synthesis of a source powder for SiC crystal growth. ${\beta}-SiC$ powders are synthesized at high temperatures (>$1400^{\circ}C$) by a reaction between silicon powder and carbon powder. The reaction is carried out in a graphite crucible operating in a vacuum ambient (or Ar gas) over a period of time sufficient to cause the Si+C mixture to react and form poly-crystalline SiC powder. End-product characterizations are pursued with X-ray diffraction analysis, SEM/EDS, particle size analyzer and ICP-OES. The purity of the end-product was analyzed with the Korean Standard KS L 1612.

The study on the electrical and optical characteristics of a new structure for color ac plasma displays (새로운 전극구조를 가진 ac-PDP의 전기 광학적 특성에 관한 연구 (I))

  • Lee, Woo-Geun;Shin, Joong-Hong;Kim, Joon-Ho;Kim, Doo-Han;Cho, Jung-Soo;Park, Chung-Hoo
    • Proceedings of the KIEE Conference
    • /
    • 1999.07e
    • /
    • pp.2227-2229
    • /
    • 1999
  • As a direct-view flat panel displays, there are many devices, such as plasma display panels(PDPs), vacuum fluorescent displays (VFDs), and light emitting diode(LED). Among these, a PDP is the first type of panel display to be made commercially available. A 'Plasma display' is the general term for a flat display utilizing the light emission that is produced by gas discharge. However, the brightness and Luminous efficiency are still not adequate for consumer television. So, the new sustain electrode type of ac PDP was proposed. By arranging the transparent electrode of quadrangle by zigzag, the area of electrode are reduced, and the length of electrode gap is increased. It generates a high luminous efficiency(corresponding to a 40% improvement of standard type), the same discharge voltage characteristics, and the low power consumption at same luminance.

  • PDF

Development of particle focusing device to monitor various low pressure processes (다양한 조건의 저압 공정 모니터링을 위한 입자 집속 장치 개발)

  • Kim, Myungjoon;Kim, Dongbin;Kang, Sang-Woo;Kim, Taesung
    • Particle and aerosol research
    • /
    • v.13 no.2
    • /
    • pp.53-63
    • /
    • 2017
  • As semiconductor process was highly integrated, particle contamination became a major issue. Because particle contamination is related with process yields directly, particles with a diameter larger than half pitch of gate should be controlled. PBMS (Particle beam mass spectrometry) is one of powerful nano particle measurement device. It can measure 5~500 nm particles at ~ 100 mtorr condition in real time by in-situ method. However its usage is restricted to research filed only, due to its big device volume and high price. Therefore aperture changeable aerodynamic lenses (ACALs) which can control particle focusing characteristics by changing its aperture diameter was proposed in this study. Unlike conventional aerodynamic lenses which changes particle focusing efficiency when operating condition is changed, ACALs can maintain particle focusing efficiency. Therefore, it can be used for a multi-monitoring system that connects one PBMS and several process chambers, which greatly improves the commercialization possibility of the PBMS. ACALs was designed based on Stokes number and evaluated by numerical method. Numerical analysis results showed aperture diameter changeable aerodynamic lenses can focus 5 to 100 nm standard particles at 0.1 to 10 torr upstream pressure.

Flow Characteristics of An Atmospheric Pressure Plasma Torch

  • Moon, Jang-H.;Kim, Youn-J.;Han, Jeon-G.
    • Journal of the Korean institute of surface engineering
    • /
    • v.36 no.1
    • /
    • pp.69-73
    • /
    • 2003
  • The atmospheric pressure plasma is regarded as an effective method for surface treatments because it can reduce the period of process and doesn't need expensive vacuum apparatus. The performance of non-transferred plasma torches is significantly depended on jet flow characteristics out of the nozzle. In order to produce the high performance of a torch, the maximum discharge velocity near an annular gap in the torch should be maintained. Also, the compulsory swirl is being produced to gain the shape that can concentrate the plasma at the center of gas flow. In this work, the distribution of gas flow that goes out to atmosphere through a plenum chamber and nozzle is analyzed to evaluate the performance of atmospheric pressure plasma torch which can present the optimum design of the torch. Numerical analysis is carried out with various angles of an inlet flow velocity. Especially, three-dimensional model of the torch is investigated to estimate swirl effect. We also investigate the stabilization of plasma distribution. For analyzing the swirl in the plenum chamber and the flow distribution, FVM (finite volume method) and SIMPLE algorithm are used for solving the governing equations. The standard k-model is used for simulating the turbulence.