• Korean Journal of Materials Research
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• v.21 no.10
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• pp.542-545
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• 2011

Half-Heusler alloys are a potential thermoelectric material for use in high-temperature applications. In an attempt to produce half-Heusler thermoelectric materials with fine microstructures, TiCoSb was synthesized by the mechanical alloying of stoichiometric elemental powder compositions and then consolidated by vacuum hot pressing. The phase transformations during the mechanical alloying and hot consolidation process were investigated using XRD and SEM. A single-phase, half- Heusler allow was successfully produced by the mechanical alloying process, but a minor portion of the second phase of the CoSb formation was observed after the vacuum hot pressing. The thermoelectric properties as a function of the temperature were evaluated for the hot-pressed specimens. The Seebeck coefficients in the test range showed negative values, representing n-type conductivity, and the absolute value was found to be relatively low due to the existence of the second phase. It is shown that the electrical conductivity is relatively high and that the thermal conductivities are compatibly low in MA TiCoSb. The maximum ZT value was found to be relatively low in the test temperature range, possibly due to the lower Seebeck coefficient. The Hall mobility value appeared to be quite low, leading to the lower value of Seebeck coefficient. Thus, it is likely that the single phase produced by mechanical alloying process will show much higher ZT values after an excess Ti addition. It is also believed that further property enhancement can be obtained if appropriate dopants are selectively introduced into this MA TiCoSb System.

• Korean Journal of Materials Research
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• v.26 no.12
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• pp.709-713
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• 2016

Grain morphology, phase stability and mechanical properties in binary Ti-Al alloys containing 43-52 mo1% Al have been investigated. Isothermal forging was used to control the grain sizes of these alloys in the range of 5 to $350{\mu}m$. Grain morphology and volume fraction of ${\alpha}_2$ phase were observed by optical metallography and scanning electron microscopy. Compressive properties were evaluated at room temperature, 1070 K, and 1270 K in an argon atmosphere. Work hardening is significant at room temperature, but it hardly took place at 1070 K and 1270 K because of dynamical recrystallization. The grain morphologies were determined as functions of aluminum content and processing conditions. The transus curve of ${\alpha}$ and ${\alpha}+{\gamma}$ shifted more to the aluminum-rich side than was the case in McCullough's phase diagram. Flow stress at room temperature depends strongly on the volume fraction of the ${\alpha}_2$ phase and the grain size, whereas flow stress at 1070 K is insensitive to the alloy composition or the grain size, and flow stress at 1270 K depends mainly on the grain size. The ${\alpha}_2$ phase in the alloys does not increase the proof stress at high temperatures. These observations indicate that improvement of both the proof stress at high temperature and the room temperature ductility should be achieved to obtain slightly Ti-rich TiAl base alloys.

• Journal of the Korean Ceramic Society
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• v.38 no.11
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• pp.962-966
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• 2001

Crystal structure of PbBi$_2$Nb$_2$$O_{9}$ and $Sr_{1.2}$$Bi_{1.8}$Ta$_2$$O_{9}$ were determined by Rietveld method using neutron diffraction data in the temperature range of 300 K~1273K. Phase transition temperature were measured from the dielectric permittivitytemperature curve. The PbBi$_2$Nb$_2$$O_{9}$ showed a phase transition at about 810 K. In the Sr-excess compound $Sr_{1.2}$$Bi_{1.8}$Ta$_2$$O_{9}$ the phase transition was suppressed down to room temperature. Several structural models were tested by the Rietiveld refinement. Based on the \`R\` values and the structural parameters, the B2cb model is judged to be the most feasible one for the high temperature phase at above 810 K of the PbBi$_2$Nb$_2$$O_{9}$. The $Sr_{1.2}$$Bi_{1.8}$Ta$_2$$O_{9}$ sample was refined to show the most reliable results by the Am2m model.sults by the Am2m model.

• KIEAE Journal
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• v.12 no.4
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• pp.97-104
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• 2012

A phase-change material is a substance with a high heat of fusion which, melting and freezing at a certain temperature, is capable of storing and releasing large amounts of energy. Heat is absorbed or released when the material changes from solid to liquid. Therefore, PCMs are classified as latent heat storage (LHS) units. The purpose of this study is to analyze PCM wallboard design parameters using dynamic energy simulation. Among the factors of PCM, melting temperature, latent heat, phase change range, thermal conductivity are very important element to maximize thermal energy storage. In order to analyze these factors, EnergyPlus which is building energy simulation provided by department of energy from the U.S is used. heat balance algorithm of energy simulation is conduction finite difference and enthalpy-temperature function is used for analyzing latent heat of PCM. The results show that in the case of melting temperature, the thermal energy storage could be improved when the melting temperature is equal to indoor surface temperature. It seems that when the phase change range is wide, PCM can store heat at a wide temperature, but the performance of heat storage is languished.

• Journal of Korean Society for Atmospheric Environment
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• v.18 no.3
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• pp.193-204
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• 2002

To investigate the relationships between the atmospheric concentrations of PCBs and temperature, quantity of both parameters was performed at an urban site in Korea from July 1999 to January 2000. The strength of correlations between total PCB and temperature was found to be significant (r = 0.752, p < 0.001). It hence indicates that total PCB contents were affected sensitively by temperature change during the sampling period. The ratio of PCB homologs and Deca-CB(PCB 209) also behaved quite similarly to the change of temperature (r>0.60, p<0.05). This may be inferable with the progress of the gas/particle partitioning to the gas phase, especially for fri-and tetra-CBs. Because they have high vapor pressure, they generally exist in the gas phase. The Clausius-Clapeyron equation was applied to the atmospheric PCB data, relating PCB partial vapor pressure to inverse temperature. This may essentially represent the temperature-controlled transition between condensed phase and atmospheric gas phase. The slopes of the resulting plot with International Council for the Explanation of the Seas (ICES) congener ranged from -2810 to -5887, with significantly steep slope and $R^2$(p< 0.005) It was inferred that the PCB atmospheric concentration was also affected by change in the surrounding conditions such as soil, lakes and trees.

• Journal of the Korean Society of Fisheries and Ocean Technology
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• v.27 no.4
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• pp.321-327
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• 1991

Experiments of quenching were made with cylindrical specimens of carbon steel S45C of diameters from 12 to 30mm were performed. The specimens were heated by electric furnace and quenched by immersion method. In order to analyze the temperature profile(cooling curves) of carbon steel including the latent heat of phase transformation, nonlinear heat conduction problem was calculated by the numerical method of inverse heat conduction problem using the apparent heat capacity method. The difference between the calculated and the experimented cooling curves was caused by the latent heat of phase transformation, and the effects of the latent heat were especially manifest at the cooling curves of center of specimens. The temperature and the quantity of the latent heat of phase transformation depend on the cooling speed at A sub(1) transformation point, and the region for cooling speed to become zero was caused by the latent heat of phase transformation.

• Korean Journal of Medicinal Crop Science
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• v.10 no.4
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• pp.288-293
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• 2002

Allergen-removed-extract was produced from Rush verniciflua by two phase methods. Phase one was high temperature treatment of Rush verniciflua tree to get allergen-removed-extract. Phase two was extraction of solution from phase one product using water or organic solvents. The solutions from above method show high antioxidant activity, anticancer activity, and improvement in lung function, but did not contain urushiol family compounds.

• Macromolecular Research
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• v.12 no.1
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• pp.1-10
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• 2004

The structural changes occurring in the isothermal crystallization processes of polyethylene (PE), poly-oxymethylene (POM), and vinylidene fluoridetrifluoroethylene (VDFTrFE) copolymer have been reviewed on the basis of our recent experimental data collected by the time-resolved measurements of synchrotron-sourced wide-angle (WAXS) and small-angle X-ray scatterings (SAXS) and infrared spectra. The temperature jump from the melt to a crystallization temperature could be measured at a cooling rate of 600-1,000 $^{\circ}C$/min, during which we collected the WAXS, SAXS, and infrared spectral data successfully at time intervals of ca. 10 sec. In the case of PE, the infrared spectral data clarified the generation of chain segments of partially disordered trans conformations immediately after the jump. These segments then became transformed into more-regular all-trans-zigzag forms, followed by the formation of an orthorhombic crystal lattice. At this stage, the generation of a stacked lamella structure having an 800-${\AA}$-long period was detected in the SAXS data. This structure was found to transfer successively to a more densely packed lamella structure having a 400-${\AA}$-long period as a result of the secondary crystallization of the amorphous region in-between the original lamellae. As for POM, the formation process of a stacked lamella structure was essentially the same as that mentioned above for PE, as evidenced from the analysis of SAXS and WAXS data. The observation of morphology-sensitive infrared bands revealed the evolution of fully extended helical chains after the generation of lamella having folded chain structures. We speculate that these extended chains exist as taut tie chains passing continuously through the neighboring lamellae. In the isothermal crystallization of VDFTrFE copolymer from the melt, a paraelectric high-temperature phase was detected at first and then it transferred into the ferroelectric low-temperature phase at a later stage. By analyzing the reflection profile of the WAXS data, the structural ordering in the high-temperature phase and the ferroelectric phase transition to the low-temperature phase of the multi-domain structure were traced successfully.

• Journal of ILASS-Korea
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• v.7 no.2
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• pp.1-6
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• 2002

It is necessary to develope a high frequency diode laser sensor system based on the absorption spectroscopy for the measurement of temperature of the spray flame. DFB diode laser operating near $2.0{\mu}m$ was used to scan over selected $H_2O$ transitions near $1.9{\mu}m\;and\;2.2{\mu}m$, respectively. The measurement sensitivity at wide range of sweep frequency was evaluated using multi-pass cell containing $CO_2$ gas. This diode laser absorption sensor with high temporal resolution up to 10kHz was applied to measure the gas temperature in the spray flame region of liquid-gas 2-phase counter flow flame. The successful demonstration of time series temperature measurement in the spray flame gives us motivation of trying to establish non-intrusive temperature measurement method in the practical spray flame.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.163-163
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• 1999

MOSFET, MESFET 그리고 MODFET는 Logic ULSIs, high speed ICs, RF MMICs 등에서 중요한 역할을 하고 있으며, 그것의 gate electrode, contact, interconnect 등의 물질로는 refractory metal을 이용한 CoSi2, MoSi2, TaSi2, PtSi2, TiSi2 등의 효과를 얻어내고 있다. 그중 TiSi2는 비저항이 가장 낮고, 열적 안정도가 좋으며 SAG process가 가능하므로 simpler alignment process, higher transconductance, lower source resistance 등의 장점을 동시에 만족시키고 있다. 최근 소자차원이 scale down 됨에 따라 TiSi2의 silicidation 과정에서 C49 TiSi2 phase(high resistivity, thermally unstable phase, larger grain size, base centered orthorhombic structure)의 출현과 그것을 제거하기 위한 노력이 큰 issue로 떠오르고 있다. 여러 연구 결과에 따르면 PAI(Pre-amorphization zimplantation), HTS(High Temperature Sputtering) process, Mo(Molybedenum) implasntation 등이 C49를 bypass시키고 C54 TiSi2 phase(lowest resistivity, thermally stable phase, smaller grain size, face centered orthorhombic structure)로의 transformation temperature를 줄일 수 있는 가장 효과적인 방법으로 제안되고 있지만, 아직 그 문제가 완전히 해결되지 않은 상태이며 C54 nucleation에 대한 physical mechanism을 밝히진 못하고 있다. 본 연구에서는 증착 시 기판온도의 변화(400~75$0^{\circ}C$)에 따라 silicon 위에 DC/RF magnetron sputtering 방식으로 Ti/Si film을 각각 제작하였다. 제작된 시료는 N2 분위기에서 30~120초 동안 500~85$0^{\circ}C$의 온도변화에 따라 RTA법으로 각각 one step annealing 하였다. 또한 Al을 cosputtering함으로써 Al impurity의 존재에 따른 영향을 동시에 고려해 보았다. 제작된 시료의 분석을 위해 phase transformation을 XRD로, microstructure를 TEM으로, surface topography는 SEM으로, surface microroughness는 AFM으로 측정하였으며 sheet resistance는 4-point probe로 측정하였다. 분석된 결과를 보면, 고온에서 제작된 박막에서의 C54 phase transformation temperature가 감소하는 것이 관측되었으며, Al impuritydmlwhswork 낮은온도에서의 C54 TiSi2 형성을 돕는다는 것을 알 수 있었다. 본 연구에서는 결론적으로, 고온에서 증착된 박막으로부터 열적으로 안정된 phase의 낮은 resistivity를 갖는 C54 TiSi2 형성을 보다 낮은 온도에서 one-step RTA를 통해 얻을 수 있다는 결과와 Al impurity가 존재함으로써 얻어지는 thermal budget의 효과, 그리고 그로부터 기대할 수 있는 여러 장점들을 보고하고자 한다.