• Journal of Advanced Marine Engineering and Technology
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• v.31 no.4
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• pp.401-409
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• 2007

Because of the various excellent characteristics of cast basalt materials. such as, anti-corrosion, anti-wearing, good hardness. high chemical stability, of which steel may not possess, the steel-basalt composite pipes are used in severe environments for compensating the defects of steel. However. without sufficient mechanical investigation prior to application. the basalt liners in steel-basalt composite pipes may be cracked and broken or the basalt liners are omitted from steel pipes in applications. In these cases, the merits of basalt materials may disappear and the basalt liners may not play their good roles as expected. Therefore, it is required that mechanical behavior of steel-basalt composite pipes and surrounding environments be fully examined before installation. The limit of bending moment with which steel-basalt composite pipe may safely endure is calculated and the limit curvature of the composite pipe in the safe range is presented in this paper. The temperature distributions and the thermal stresses are also computed and the limit difference of temperatures between inner and outer side of composite pipe is given together.

• Journal of the Microelectronics and Packaging Society
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• v.26 no.3
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• pp.15-22
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• 2019

In these days, importance of the power electronic devices and modules keeps increasing due to electric vehicles and energy saving requirements. However, current silicon-based power devices showed several limitations. Therefore, wide band gap (WBG) semiconductors such as SiC, GaN, and $Ga_2O_3$ have been developed to replace the silicon power devices. WBG devices show superior performances in terms of device operation in harsh environments such as higher temperatures, voltages and switching speed than silicon-based technology. In power devices, the reliability of the devices and module package is the critically important to guarantee the normal operation and lifetime of the devices. In this paper, we reviewed the recent trends of the power devices based on WBG semiconductors as well as expected future technology. We also presented an overview of the recent package module and fabrication technologies such as direct bonded copper and active metal brazing technology. In addition, the recent heat management technologies of the power modules, which should be improved due to the increased power density in high temperature environments, are described.

• Journal of Soil and Groundwater Environment
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• v.21 no.6
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• pp.46-55
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• 2016

This experimental study was aimed to estimate interfacial tension of brine-$CO_2$ by using a pendant bubble method and image analysis. Measurements were performed for wide ranges of temperatures, pressures, and salinities covering reservoir conditions in Pohang basin, a possible candidate for $CO_2$ storage operation in Korea. The profiles of $CO_2$ bubbles in brine obtained from image analysis with the densities of brine and $CO_2$ from previous studies were applied to Laplace-Young equation for calculating interfacial twnsion in brine-$CO_2$ system. The experimental results reveals that the interfacial tension is significantly affected by reservoir conditions such as pressure, temperature and water salinity. For conditions of constant temperature and water salinity, the interfacial tension decreases as pressure increases for low pressures (P < $P_c$), and approaches to a constant value for high pressures. For conditions of constant pressure and water salinity, the interfacial tension increases as temperature increases for T < $T_c$, with an asymptotic trend towards a constant value for high temperatures. For conditions of constant pressure and temperature, the interfacial tension increases with increasing water salinity. The trends in changes of interfacial tension can be explained by the effects of the reservoir conditions on the density difference of brine and $CO_2$, and the solubility of $CO_2$ in brine. The information on interfacial tensions obtained from this research can be applied in predicting the migration and distribution of injecting and residual fluids in brine-$CO_2$-rock systems in deep geological environments during geological $CO_2$ sequestrations.

• Journal of the Korean Society for Aeronautical & Space Sciences
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• v.31 no.10
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• pp.21-26
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• 2003

In this research, the change of coefficient of thermal expansion (CTE) of graphite/epoxy composite laminate under space environment was measured using fiber optic sensors. Two fiber Bragg grating (FBG) sensors have been adopted for the simultaneous measurement of thermal strain and temperature. Low Earth Orbit (LEO) conditions with high vacuum, ultraviolet and thermal cycling environments were simulated in a thermal vacuum chamber. As a pre-test, a FBG temperature sensor was calibrated and a FBG strain sensor was verified through the comparison with the electric strain gauge (ESG) attached on an aluminun specimen at high and low temperature respectively. The change of the CTE in a composite laminate exposed to space environment was measured for intervals of aging cycles in real time. As a whole, there was no abrupt change of the CTE after 1000 aging cycles. After aging, however, the CTE decreased a Little all over the test temperature range. These changes are caused by outgassing, moisture desorption, matrix cracking etc.

• Economic and Environmental Geology
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• v.50 no.6
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• pp.509-515
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• 2017

Quartz is the most abundant mineral in the Earth's continental crust. Therefore, understanding of quartz dissolution and precipitation is very important to know about weathering processes and interactions between rocks and water in hydrothermal and metamorphic environments. This paper presents a basic review on the research about quartz dissolution mechanism under various physico-chemical conditions. We rearranged the relationship between each physico-chemical factor and dissolution mechanism from the results of previous researchers in this paper. From this result, we understood that quartz dissolution and precipitation are affected by each factor such as temperature, pH, and applied stress conditions at contact point. In particular, we recognized that the high pH and temperature conditions have different anion concentrations on mineral's surface. As a result, high pH and temperature conditions have a better effect than applied stress condition to the quartz dissolution mechanism.

• Korean Journal of Ecology and Environment
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• v.54 no.2
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• pp.120-124
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• 2021

In order to understand the vegetative role of Glycine soja, we studied the basic physiological characteristics between Glycine soja and Glycine max. For this study, the light intensity (μmol m^-2 s^-1) on leaf surface, leaf temperature (℃), transpiration rate (mmol m^-2 s^-1), photosynthetic rate (μmol m^-2 s^-1), substomatal CO₂ partial pressure (vpm) of Glycine soja and Glycine max were measured, and the quantum yield, photosynthesis rate per substomatal CO₂ partial pressure were calculated. In the results of simple regression analysis, the increasing quantum yield decreases leaf temperature both of Glycine soja and Glycine max and the increasing leaf temperature decreases transpiration rate in case of Glycine soja. However, in case of Glycine max, the increasing leaf temperature decreases substomatal CO₂ partial pressure, photosynthetic rate, and photosynthetic rate per substomatal CO₂ partial pressure as well as transpiration rate. Also, increasing transpiration rate increases substomatal CO₂ partial pressure while decreases photosynthetic rate per substomatal CO₂ partial pressure. Thus, Glycine soja is relatively more easily adaptable to severe environments with low soil nutrients and high light levels. Compared to Glycine max susceptible to water loss due to a water-poor terrestrial habitat, the physiological traits of Glycine soja has a high average transpiration rate and are less susceptible to water loss will act as a factor that limits the habitat according to soil moisture.

• Journal of the Korean Vacuum Society
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• v.21 no.6
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• pp.287-294
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• 2012

In the high vacuum condition of the space, outgassing from any assembly of satellite can contaminate satellites, especially second surface mirror and optical lens, it cause satellite to fail in own missions. Therefore, all unit shall be check for compatibility with vacuum using CVCM (Collected Volatile Condensable Material) and TML (Total Mass Loss) in advance. CVCM and TML of the PZT-5 piezoelectric ceramic vibrator has less than 0.1% and 1.0% respectively. Also, it has less than 500 $ng/cm^2/hr$ of Thermoelectric Quartz Crystal Microbalance for vacuum bake-out test using high temperature(more than $80^{\circ}C$) and high vacuum (less than $5.0{\times}10^{-3}$ Pa). Thus, piezoelectric ceramic vibrator may be employed in the vacuum environments. Finally, it can be confirmed that the characteristics change of the piezoelectric ceramic vibrator is less than 1% under vacuum environments.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2018.06a
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• pp.55-55
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• 2018

Recently, amorphous oxides such as InGaZnO (IGZO) and InZnO (IZO) as a channel layer of an oxide TFT have been attracted by advantages such as high mobility, good uniformity, and high transparency. In order to apply such an amorphous oxide TFTs to a display, the stability in various environments must be ensured. In the InGaZnO which has been studied in the past, Ga elements act as a suppressor of oxygen vacancy and result in a decreased mobility at the same time. Previous studies have been showed that the InZnO, which does not contain Ga, can achieve high mobility, but has relatively poor stability under various instability environments. In this study, the TFTs using $IZO/Al_2O_3$ double layer structure were studied. The introduction of an $Al_2O_3$ interlayer between source/drain and channel causes superior electrical characteristics and electrical stability as well as reduced contact resistance with optimally perfect ohmic contact. For the IZO and $Al_2O_3$ bilayer structures, the IZO 30nm IZO channels were prepared at $Ar:O_2=30:1$ by sputtering and the $Al_2O_3$ interlayer were depostied with various thickness by ALD at $150^{\circ}C$. The optimal sample exhibits considerably good TFT performance with $V_{th}$ of -3.3V and field effect mobility of $19.25cm^2/Vs$, and reduced $V_{th}$ shift under positive bias stress stability, compared to conventional IZO TFT. The enhanced TFT performances are closely related to the nice ohmic contact properties coming from the defect passivation of the IZO surface inducing charge traps, and we will provide the detail mechanism and model via electrical analysis and transmission line method.

• Electronics and Telecommunications Trends
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• v.5 no.1
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• pp.55-70
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• 1990

SIMOX SOI is known to be one of the most useful technologies for fabrications of new generation ULSI devices. This paper describes the current status of SIMOX SOI technology for ULSI applications. The SIMOX wafer is vertically composed of buried oxide layer and silicon epitaxial layer on top of the silicon substrate. The buried oxide layer is used for the vertical isolation of devices The oxide layer is formed by high energy ion implantation of high dose oxygen into the silicon wafer, followed by high temperature annealing. SIMOX-based CMOS fabrication is transparent to the conventional IC processing steps without well formation. Furthermore, thin film CMOX/SIMOX can overcome the technological limitations which encountered in submicron bulk-based CMOS devices, i.e., soft-error rate, subthreshold slope, threshold voltage roll-off, and hot electron degradation can be improved. SIMOX-based bipolar devices are expected to have high density which comparable to the CMOX circuits. Radiation hardness properties of SIMOX SOI extend its application fields to space and military devices, since military ICs should be operational in radiation-hardened and harsh environments. The cost of SIMOX wafer preparation is high at present, but it is expected to reduce as volume increases. Recent studies about SIMOX SOI technology have demonstrated that the performance of the SIMOX-based submicron devices is superior to the circuits using the bulk silicon.

• Proceedings of the KSME Conference
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• 2003.11a
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• pp.127-132
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• 2003

A study of high-pressure n-heptane droplet vaporization is conducted with emphasis placed on equilibrium at vapor-liquid interface. General frame of previous rigorous model[1] is retained but tailored for flash equilibrium calculation of vapor-liquid interfacial thermodynamics. The model is based on complete time-dependent conservation equations with a full account of variable properties and vapor-liquid interfacial thermodynamics. The influences of high-pressure phenomena, including ambient gas solubility, thermodynamic non-ideality, and property variation on the droplet evaporation are investigated. The governing equations and associated moving interfacial boundary conditions are solved numerically using a implicit scheme with the preconditioning method and the dual time integration technique. And a parametric study of entire droplet vaporization history as a function of ambient pressure, temperature has been conducted. Some computational results are compared with Sato's experimental data for the validation of calculations. For low ambient temperatures, the droplet lifetime first increases with pressures, then decreases for high pressures. For higher ambient temperatures, the droplet lifetime increase with less amplitude than that of low ambient temperatures, which then decreases with more amplitude than that of low temperatures. The solubility of nitrogen can not be neglected in the high pressure and it becomes higher as the pressure goes up.