• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2016년도 추계학술대회 논문집
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• pp.197-197
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• 2016

Commercially pure titanium (CP Ti) and Ti-6Al-4V alloys have been widely used for biomedical applications. However, the use of the Ti-6Al-4V alloy in biomaterial is then a subject of controversy because aluminum ions and vanadium oxide have potential detrimental influence on the human body due to vanadium and aluminum. Hence, recent works showed that the synthesis of new Ti-based alloys for implant application involves more biocompatible metallic alloying element, such as, Nb, Hf, Zr and Mo. In particular, Nb and Hf are one of the most effective Ti ${\beta}-stabilizer$ and reducing the elastic modulus. Plasma electrolyte oxidation (PEO) is known as excellent method in the biocompatibility of biomaterial due to quickly coating time and controlled coating condition. The anodized oxide layer and diameter modulation of Ti alloys can be obtained function of improvement of cell adhesion. Manganese(Mn) plays very important roles in essential for normal growth and metabolism of skeletal tissue in vertebrates and can be detected as minor constituents in teeth and bone. Radio frequency(RF) magnetron sputtering in the various PVD methods has high deposition rates, high-purity films, extremely high adhesion of films, and excellent uniform layers for depositing a wide range of materials, including metals, alloys and ceramics like a hydroxyapatite. The aim of this study is to research the Mn coatings on the micro-pore formed Ti-29Nb-xHf alloys by RF-magnetron sputtering for dental applications. Ti-29Nb-xHf (x= 0, 3, 7 and 15wt%, mass fraction) alloys were prepared Ti-29Nb-xHf alloys of containing Hf up from 0 wt% to 15 wt% were melted by using a vacuum furnace. Ti-29Nb-xHf alloys were homogenized for 2 hr at $1050^{\circ}C$. Each alloy was anodized in solution containing typically 0.15 M calcium acetate monohydrate + 0.02 M calcium glycerophosphate at room temperature. A direct current power source was used for the process of anodization. Anodized alloys was prepared using 270V~300V anodization voltage at room. Mn coatings was produced by RF-magnetron sputtering system. RF power of 100W was applied to the target for 1h at room temperature. The microstructure, phase and composition of Mn coated oxide surface of Ti-29Nb-xHf alloys were examined by FE-SEM, EDS, and XRD.

• 자원리싸이클링
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• 제25권5호
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• pp.75-83
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• 2016

탄소환원질화법을 이용하여 질화알루미늄(Aluminum Nitride: AlN)을 제조하는 연구를 배치당 0.7 ~ 1.5 kg 규모로 규모 확대하여 수행하였다. 고품위 알루미나 분말과 탄소(carbon black)를 배합하여 흑연 도가니에 장입하고, 노내 진공도 $2.0{\times}10^{-1}Torr$에서 온도($1,550{\sim}1,750^{\circ}C$), 시간(0.5 ~ 4 hr), $N_2$유량($10{\sim}40{\ell}/min$)을 변화시키면서 AlN을 합성하였다. 실험결과 합성온도 $1,700{\sim}1,750^{\circ}C$, 합성시간 3시간, 질소유량 $40{\ell}/min$가 적정 조건이었다. 또한, 합성한 AlN에 잔존하는 탄소를 제거하기 위하여 관상로에서 온도 $650-750^{\circ}C$, 1 - 2시간 범위에서 탈탄을 시킨 결과, 알루미나와 탄소 몰배합비 1 : 3.2 로 합성한 시료를 대기 분위기에서 탈탄온도 $750^{\circ}C$, 관상로의 회전속도 1.5 rpm에서 2시간 탈탄하는 것이 적정조건이었다. 시험 제조한 AlN의 성분 분석 결과 C 함량 835 ppm, O 함량 0.77%으로서 순도 99% 이상의 고품위 제품을 제조할 수 있었다.

• 소성∙가공
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• 제27권1호
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• pp.48-53
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• 2018

Aluminum nitride (AlN) is used by the semiconductor industry that has requirements for high thermal conductivity. The theoretical thermal conductivity of single crystal AlN is 320W/mK. Whereas, the values measured for polycrystalline AlN ceramics range from 20 W/mK to 280 W/mK. The variability is strongly dependent upon the purity of the starting materials and non-uniform dispersibility of the sintering additive. The conventional AlN sintering additive used yttria ($Y_2O_3$), but the dispersibility of the powder in the mixing process was important. In this study, we investigated the mechanical and thermal conductivity of yttrium nitrate ($Y(NO_3)_3{\cdot}6H_2O$), as a sintering additive in order to improve the dispersibility of $Y_2O_3$. The sintering additives content was in the range of 2 to 4.5wt.%. The density of AlN gradually increased with increasing contents of sintering additive and the flexural strength gradually increased as well. The flexural strength of the sintered body containing 4 wt% of $Y_2O_3$ and $Y(NO_3)_3{\cdot}6H_2O$ was 334.1 MPa and 378.2 MPa, respectively. The thermal conductivities were 189.7W/mK and 209.4W/mK, respectively. In the case of hardness, there was only a slight difference and the average value was about 10 GPa. Therefore, densification, density and strength values were found to be proportional to its content. It was confirmed that AlN using $Y(NO_3)_3{\cdot}6H_2O$ displayed relatively higher thermal conductivity and mechanical properties than the $Y_2O_3$.

• 한국응용과학기술학회지
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• 제30권1호
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• pp.71-77
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• 2013

알루미늄 테르밋 반응의 환원제로서 알루미늄 분말은 200 메쉬 이하의 미분이 필요하나, 알루미늄의 높은 인성과 분말 제조비 때문에 경제적으로 용이하지 않다. 그러므로 $Mn_3O_4$ 분진 환원용 알루미늄 미분의 제조 코스트를 낮추기 위해, 알루미늄 합금분말의 제특성이 검토되었다. 망간을 다량 함유한 알루미늄 합금괴는 취성이 큰 금속간 화합물을 함유하고 있기 때문에 쉽게 파쇄할 수 있다. 또 망간은 망간 합금철의 주성분이다. Al-15%Mn 합금분말을 기계적 파쇄법으로 저렴하게 제조할 수 있다. Al 분말 대신에 Al-15%Mn 합금분말을 사용한 테르밋 반응 결과는 환원제로 순 알루미늄 분말을 사용한 경우와 같이 고순도 망간 합금철을 얻을 수 있었다. Al-15%Mn 합금분말를 이용한 $Mn_3O_4$ 분진의 망간 회수율은 알루미늄 분말을 이용한 경우의 약 65% 보다 높은 약 70%의 높은 수준을 보였으며, 이는 비산이 적은 것에 기인한다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.183-184
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• 2013

Two main MBE growth techniques have been used: plasma-assisted MBE (PA-MBE), which utilizes a rf plasma to supply active nitrogen, and ammonia MBE, in which nitrogen is supplied by pyrolysis of NH3 on the sample surface during growth. PA-MBE is typically performed under metal-rich growth conditions, which results in the formation of gallium droplets on the sample surface and a narrow range of conditions for optimal growth. In contrast, high-quality GaN films can be grown by ammonia MBE under an excess nitrogen flux, which in principle should result in improved device uniformity due to the elimination of droplets and wider range of stable growth conditions. A drawback of ammonia MBE, on the other hand, is a serious memory effect of NH3 condensed on the cryo-panels and the vicinity of heaters, which ruins the control of critical growth stages, i.e. the native oxide desorption and the surface reconstruction, and the accurate control of V/III ratio, especially in the initial stage of seed layer growth. In this paper, we demonstrate that the reliable and reproducible growth of GaN on Si (110) substrates is successfully achieved by combining two MBE growth technologies using rf plasma and ammonia and setting a proper growth protocol. Samples were grown in a MBE system equipped with both a nitrogen rf plasma source (SVT) and an ammonia source. The ammonia gas purity was ＞99.9999% and further purified by using a getter filter. The custom-made injector designed to focus the ammonia flux onto the substrate was used for the gas delivery, while aluminum and gallium were provided via conventional effusion cells. The growth sequence to minimize the residual ammonia and subsequent memory effects is the following: (1) Native oxides are desorbed at $750^{\circ}C$ (Fig. (a) for [$1^-10$] and [001] azimuth) (2) 40 nm thick AlN is first grown using nitrogen rf plasma source at $900^{\circ}C$ nder the optimized condition to maintain the layer by layer growth of AlN buffer layer and slightly Al-rich condition. (Fig. (b)) (3) After switching to ammonia source, GaN growth is initiated with different V/III ratio and temperature conditions. A streaky RHEED pattern with an appearance of a weak ($2{\times}2$) reconstruction characteristic of Ga-polarity is observed all along the growth of subsequent GaN layer under optimized conditions. (Fig. (c)) The structural properties as well as dislocation densities as a function of growth conditions have been investigated using symmetrical and asymmetrical x-ray rocking curves. The electrical characteristics as a function of buffer and GaN layer growth conditions as well as the growth sequence will be also discussed. Figure: (a) RHEED pattern after oxide desorption (b) after 40 nm thick AlN growth using nitrogen rf plasma source and (c) after 600 nm thick GaN growth using ammonia source for (upper) [110] and (lower) [001] azimuth.

• 자원리싸이클링
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• 제30권2호
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• pp.39-45
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• 2021

폐 태양광전지 처리과정에서 은은 실리콘 및 알루미늄을 회수 위해 제거 하거나 처리하지않고 버리고있는 현실이다. 경제적 및 환경 보호 측면에 폐 태양광전지부터 은의 회수 중요하다고 판단함. 선행연구에서 1 mol/L 질산, 반응온도 70도, 반응시간 2h로 폐 태양광전지부터 Ag, Al을 침출 하었다. 이 침출액으로부터 은을 회수하기 위해 추출제 LIX63 및 탈거제 암모니아수 이용하였다. 추출 및 탈거 효율에 영향 미치는 조건: 침출액 pH, 금속이온 농도, 추출제의 농도, A/O ratio(수상 및 유기상 부피비율), 탈거제 농도 및 탁거과정에서 A/O ratio등을 변화시켜 조차하였다. McCabe-Thiele plots로부터 Ag(I)의 추출 및 탈거에 대한 이론 단수를 구하였으며, 향류 다단 모의 추출 시험을 통해 Ag(I)의 추출과 탈거에 대한 효율이 각각 >99.99%, 98.9% 이었다. Ag(I)와 Al(III)의 순도는 각각 99.998% 와 99.99%이었으며, 질산 침출액으로부터 Ag(I)및 Al(III)을 회수하기 위한 공정도를 제안하였다.