• 한국전기전자재료학회논문지
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• 제19권9호
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• pp.818-824
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• 2006

The effects of high-temperature process required to fabricate the SiC devices on the surface morphology and the electrical characteristics were investigated for 4H-SiC Schottky diodes. The 4H-SiC diodes without a graphite cap layer as a protection layer showed catastrophic increase in an excess current at a forward bias and a leakage current at a reverse bias after high-temperature annealing process. Moreover it seemed to deviate from the conventional Schottky characteristics and to operate as an ohmic contact at the low bias regime. However, the 4H-SiC diodes with the graphite cap still exhibited their good electrical characteristics in spite of a slight increase in the leakage current. Therefore, we found that the graphite cap layer serves well as the protection layer of silicon carbide surface during high-temperature annealing. Based on a closer analysis on electric characteristics, a conductive surface transfiguration layer was suspected to form on the surface of diodes without the graphite cap layer during high-temperature annealing. After removing the surface transfiguration layer using ICP-RIE, Schottky diode without the graphite cap layer and having poor electrical characteristics showed a dramatic improvement in its characteristics including the ideality factor[${\eta}$] of 1.23, the schottky barrier height[${\Phi}$] of 1.39 eV, and the leakage current of $7.75\{times}10^{-8}\;A/cm^{2}$ at the reverse bias of -10 V.

• 한국세라믹학회지
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• 제32권7호
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• pp.761-768
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• 1995

Double layered BaTiO3 thin films with high dielectric constant as well as good insulating property were prepared for the application to low voltage driving thin film electroluminescent (TFEL) device. BaTiO3 thin films were formed by rf-magnetron sputtering technique. Amorphous and polycrystalline BaTiO3 thin films were deposited at the substrate temperatures of room temperature and 55$0^{\circ}C$, respectively. Two kinds of films prepared under these conditions showed high resistivity and high dielectric constant. The figure of merit (=$\varepsilon$r$\times$Eb.d) of polycrystalline BaTiO3 thin film was very high (8.43$\mu$C/$\textrm{cm}^2$). The polycrystalline BaTiO3 showed a substantial amount of leakage current (I), under the high electric field above 0.5 MV/cm. The double layered BaTiO3 thin film, i.e., amorphous BaTiO3 layer coated polycrystalline BaTiO3 thin film, was prepared by the new stacking method and showed very good dielectric and insulating properties. It showed a high dielectric constant fo 95 and leakage current density of 25 nA/$\textrm{cm}^2$ (0.3MV/cm) with the figure of merit of 20$\mu$C/$\textrm{cm}^2$. The leakage current density in the double layered BaTiO3 was much smaller than that in polycrystalline BaTiO3 under the high electric field. The saturated brightness of the devices using double layered BaTiO3 was about 220cd/$m^2$. Threshold voltage of TFEL devices fabricated on double layered BaTiO3 decreased by 50V compared to the EL devices fabricated on amorphous BaTiO3.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2001년도 하계학술대회 논문집 B
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• pp.795-797
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• 2001

Voltage varing Fate dv/dt which is applied to induction motor usually makes unnegligible leakage current and it flows through stator winding and motor frame. This kind of harmonic leakage current makes effect on power source and cuases electromagnetic trouble because the motor frame has earth. Therefore in this study, a high frequency induction motor model is developed and analyze the motor performance to explain the phenomena. Inverter model is also developed and is combined with the motel model to prepare the basis of the high frequency effects on inverter fed induction motor.

• The Korean Journal of Ceramics
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• 제2권2호
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• pp.95-101
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• 1996

Variations of the leakage current behaviors and interface potential barrier $({\Phi}_B)$ of rf-sputter deposited (Ba, Sr)$TiO_3$ (BST) thin films with thicknesses ranging from 20 nm to 150nm are investigated as a function of the thickness and bias voltages. The top and bottom electrodes are dc-sputter-deposited Pt films. ${\Phi}_B$ critically depends on the BST film deposition temperature, postannealing atmosphere and time after the annealing. The postannealing under $N_2$ atmosphere results in a high interface potential barrier height and low leakage current. Maintaining the BST capacitor in air for a long time reduces the ${\Phi}_B$ from about 2.4 eV to 1.6 eV due to the oxidation. ${\Phi}_B$ is not so dependent on the film thickness in this experimental range. The leakage conduction mechanism is very dependent on the BST film thickness; the 20 nm thick film shows tunneling current, 30 and 40 nm thick films show Shottky emission current.

• 한국전기전자재료학회논문지
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• 제15권2호
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• pp.190-197
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• 2002

In this thesis, ZnO varistors with various formulation, such as A∼E, were fabricated according to ceramic fabrication method. The microstructure, electrical properties, and surge characteristics of ZnO varistors were investigated according to ZnO varistors with various formulation. In the microstructure, A∼E\`s ZnO varistor ceramics sintered at 1130$\^{C}$ was consisted of ZnO grain(ZnO), spinel phase (Zn$\_$2.33/Sb$\_$0.67/O$\_$4/), Bi-rich phase(Bi$_2$O$_3$) and intergranuler phase, wholly. Lightning impulse residual voltage of A, B, C and E\`s ZnO varistors suited standard characteristics, below 12kV at current of 5kA. On the contrary, D\`s ZnO varistor exhibited high residual voltage as high reference voltage. In the accelerated aging test, leakage current and watt loss of B, C and D\`s ZnO varistors increases abruptly with stress time under the first a.c. stress(115$\^{C}$/3.213kV/300h). Consequently, C varistor exhibited a thermal run away. On the contrary, leakage current and watt loss of A and C\`s ZnO varistors which show low initial leakage current exhibited constant characteristics. After high current impulse test, A\`s ZnO varistor has broken the side of varistor but impulse current flowed. On the contrary, E\`s ZnO Varistor exhibited good discharge characteristics which the appearance of varistor was not wrong such as puncture, flashover, creaking and other significant damage. After long duration impulse current test, E\`s ZnO varistor exhibited good discharge characteristics which the appearance of varistor was not wrong such as puncture, flashover, creaking and other significant damage. After high current impulse test and long duration impulse current test, E\`s ZnO varistor exhibited very good characteristics which variation rate of residual voltage is 1.4% before and after test.

• 대한전자공학회논문지SD
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• 제45권8호
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• pp.37-43
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• 2008

본 논문에서는 고속 동작에서 동적 전력 소비와 정적 전력 소비를 동시에 줄일 수 있는 self-timed current-mode Logic(STCML)을 제안한다. 제안된 로직 스타일은 펄스 신호로 가상 접지를 방전하여 로직 게이트의 누설 전류(subthreshold leakage current)를 획기적으로 감소시켰다. 또한, 본 로직은 개선된 self-timing buffer를 사용하여 동적모드 동작 시 발생되는 단락 회로 전류(short-circuit current)를 최소화하였다. 80-nm CMOS 공정을 이용하여 실시한 비교 실험 결과, 제안된 로직 스타일은 기존의 대표적인 current-mode logic인 DyCML에 비하여 동일한 시간 지연에서 26 배의 누설 전력 소비를 줄이고 27%의 동적 전력 소비를 줄일 수 있었다. 또한, 대표적인 디지털 로직 스타일인 DCVS와의 비교 결과, 59%의 누설 전력 소비감소 효과가 있었다.

• 대한전자공학회논문지TE
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• 제39권4호
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• pp.335-340
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• 2002

본 논문에서 얇은 실리콘 산화막의 스트레스 유기 누설전류는 나노 구조를 갖는 트랜지스터의 ULSI 실현을 위하여 조사하였다. 인가전압의 온 오프 시간에 따른 스트레스전류와 전이전류는 실리콘 산화막에 고전압 스트레스 유기 트랩분포를 측정하기 위하여 사용하였다. 스트레스전류와 전이전류는 고스트레스 전압에 의해 발생된 트랩의 충방전과 양계면 가까이에 발생된 트랩의 터널링에 기인한다. 스트레스 유기 누설전류는 전기적으로 기록 및 소거를 실행하는 메모리 소자에서 데이터 유지 능력에 영향이 있음을 알았다. 스트레스전류, 전이전류 그리고 스트레스 유기 누설전류의 두께 의존성에 따른 산화막 전류는 게이트 면적이 10/sup －3/㎠인 113.4Å에서 814Å까지의 산화막 두께를 갖는 소자에서 측정하였다. 스트레스 유기 누설전류, 스트레스전류, 그리고 전이전류는 데이터 유지를 위한 산화막 두께의 한계에 대해 연구 조사하였다.

• Journal of Electrical Engineering and Technology
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• 제9권5호
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• pp.1677-1685
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• 2014

Major problem in the high voltage power transmission line is the flashover due to polluted ceramic insulators which leads to failure of equipments, catastrophic fires and power outages. This paper deals with the development of a better diagnostic tool to predict the flashover and pollution severity of power transmission line insulators based on the wavelet transform and fuzzy c-means clustering approach. In this work, laboratory experiments were carried out on power transmission line porcelain insulators under AC voltages at different pollution conditions and corresponding leakage current patterns were measured. Discrete wavelet transform technique is employed to extract important features of leakage current signals. Variation of leakage current magnitude and distortion ratio at different pollution levels were analyzed. Fuzzy c-means algorithm is used to cluster the extracted features of the leakage current data. Test results clearly show that the flashover and pollution severity of power transmission line insulators can be effectively realized through fuzzy clustering technique and it will be useful to carry out preventive maintenance work.

• 한국철도학회:학술대회논문집
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• 한국철도학회 2007년도 춘계학술대회 논문집
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• pp.20-25
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• 2007

KTX is being operated on Kyung-Pu High Speed Railroad Line and Ho-Nam Railroad Line from April 2004. Reduction units is occurring water infiltration at heavy snow and oil leakage because of labyrinth structure. This paper describes design method and evaluation technology to improve structure to prevent water infiltration and oil leakage for reduction units of KTX. This reduction units need high power and high speed to run and they have to make optimal lubricant without change current interface.

• 전력전자학회:학술대회논문집
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• 전력전자학회 1998년도 전력전자학술대회 논문집
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• pp.221-224
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• 1998

A PWM inverter with an induction motor often has a problem with a high-frequency leakage current that flows through the distributed electrostatic capacitance from the motor windings to ground. This paper presents an equivalent circuit for high-frequency leakage currents in PWM inverter feeding an induction motor, which forms an LCR series resonant circuit.