• 제목/요약/키워드: High frequency partial discharge

검색결과 153건 처리시간 0.018초

Electrical and Thermal Characterization of Organic Varnish Filled with ZrO2 Nano Filler Used in Electrical Machines

  • Selvaraj, D. Edison;Vijayaraj, R.;Sugumaran, C. Pugazhendhi
    • Journal of Electrical Engineering and Technology
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    • 제10권4호
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    • pp.1700-1711
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    • 2015
  • In the last decade it has been witnessed significant developments in the area of nano particles and nano scale fillers on electrical, thermal, and mechanical properties of polymeric materials such as resins, varnishes, enamel and bakelites. The electric and thermal properties were more important in the electrical equipments for both steady state and transient state conditions. This paper deals with the characterization of the electric and thermal properties of the pure varnish and zirconia (ZrO2) filler mixed varnish. The electric properties such as dielectric loss (tan δ), dielectric constant (ε), dielectric strength and partial discharge voltage were analyzed and detailed for different samples. It was observed that zirconia nano filler mixed varnish has the superior dielectric and thermal properties when compared to those of standard varnish. It has shown that at power frequency the 1wt% nano composite sample has the higher permittivity value when compared to other samples. It has been examined that the 1wt% sample was having higher inception and extinction voltages when compared to other samples. It has been observed that 1wt% sample has higher dielectric strength when compared with other samples. There has been an improvement of thermal property by adding few weight percent of zirconia nano fillers. There was not much variation in glass transition among the nano mixed composites. The weight loss was improved at 1wt% of the zirconia nano fillers.

Molecular Beam Epitaxial Growth of Oxide Single Crystal Films

  • Yoon, Dae-Ho;Yoshizawa, Masahito
    • 한국결정성장학회:학술대회논문집
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    • 한국결정성장학회 1996년도 The 9th KACG Technical Annual Meeting and the 3rd Korea-Japan EMGS (Electronic Materials Growth Symposium)
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    • pp.508-508
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    • 1996
  • ;The growth of films have considerable interest in the field of superlattice structured multi-layer epitaxy led to realization of new devices concepts. Molecular beam epitaxy (MBE) with in situ observation by reflection high-energy electron diffraction (RHEED) is a key technology for controlled layered growth on the atomic scale in oxide crystal thin films. Also, the combination of radical oxygen source and MBE will certainly accelerate the progress of applications of oxides. In this study, the growth process of single crystal films using by MBE method is discussed taking the oxide materials of Bi-Sr-Ca-Cu family. Oxidation was provided by a flux density of activated oxygen (oxygen radicals) from an rf-excited discharge. Generation of oxygen radicals is obtained in a specially designed radical sources with different types (coil and electrode types). Molecular oxygen was introduced into a quartz tube through a variable leak valve with mass flowmeter. Corresponding to the oxygen flow rate, the pressure of the system ranged from $1{\;}{\times}{\;}10^{-6}{\;}Torr{\;}to{\;}5{\;}{\times}{\;}10^{-5}$ Torr. The base pressure was $1{\;}{\times}{\;}10^{-10}$ Torr. The growth of Bi-oxides was achieved by coevaporation of metal elements and oxygen. In this way a Bi-oxide multilayer structure was prepared on a basal-plane MgO or $SrTiO_3$ substrate. The grown films compiled using RHEED patterns during and after the growth. Futher, the exact observation of oxygen radicals with MBE is an important technology for a approach of growth conditions on stoichiometry and perfection on the atomic scale in oxide. The oxidization degree, which is determined and controlled by the number of activated oxygen when using radical sources of two types, are utilized by voltage locked loop (VLL) method. Coil type is suitable for oxygen radical source than electrode type. The relationship between the flux of oxygen radical and the rf power or oxygen partial pressure estimated. The flux of radicals increases as the rf power increases, and indicates to the frequency change having the the value of about $2{\times}10^{14}{\;}atoms{\;}{\cdots}{\;}cm^{-2}{\;}{\cdots}{\;}S^{-I}$ when the oxygen flow rate of 2.0 seem and rf power 150 W.150 W.

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용량성 아이들링 SEPIC의 분석 및 구현 (Analysis and Implementation of the Capacitive Idling SEPIC)

  • 최동훈;조경현;나희수
    • 전자공학회논문지SC
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    • 제40권1호
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    • pp.39-44
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    • 2003
  • 휴대용 전자기기가 많이 개발되고 보급됨에 따라서 배터리의 중요성은 점점 커져가고 있다. 기기의 수명을 늘이고자 고전력밀도의 배터리를 요구하게 되었고, 현재에는 리튬-이온 배터리를 많이 사용하게 되었다. 단위체적 및 중량당의 전력밀도 부분에서는 기존에 사용하던 배터리보다 성능이 우수하지만, 방전전압이 감소하는 특성이 있기 때문에 배터리의 수명을 최대한 늘리기 위해서는 이 특성에 알맞은 컨버터가 필요하다. 그래서 리튬-이온 배터리를 사용하는 휴대용 저전력 전자기기의 전원부로써 용량성 아이들링 SEPIC을 제안하였다. 승압과 강압이 가능한 SEPIC의 특성을 가지면서, 추가된 스위치와 다이오드를 통해서 스위치에 부분적인 소프트 전환을 가능하게 하기 때문에, 스위칭 주파수의 증가를 가능하게 한다. 본 논문에서는 직류 정상상태의 전압전환비, 동작모드별 회로 및 회의특성을 분석하고 구현하였다.