• 대한전기학회논문지:전기기기및에너지변환시스템부문B
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• 제54권1호
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• pp.33-39
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• 2005

Comparing with the conventional transformer without the air gap, a contactless transformer with the large air gap between the long primary winding and the secondary winding has increased leakage inductance and reduced magnetizing inductance. For transferring the primary power to the secondary one, the high frequency series resonant converter has been widely used for the contactless power supply system with the large air gap and the increased leakage inductance of the contactless transformer However, the high frequency series resonant converter has the disadvantages of the low efficiency and high voltage gain characteristics in the overall load range due to the large air gap and the circulating magnetizing current. In this paper, the characteristics of the high efficiency and unit voltage gain are revealed in the proposed three-level series-parallel resonant converter. The results are verified on the simulation based on the theoretical analysis and the 5kW experimental prototype.

• 전력전자학회:학술대회논문집
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• 전력전자학회 1998년도 Proceedings ICPE 98 1998 International Conference on Power Electronics
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• pp.452-457
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• 1998

This paper deal with problems of leakage current, shaft voltage, bearing current, and EMI, in valiable-speed AC drives. The originating mechanism is illustrated with a high-frequency equivalent circuit. Reduction methods are classified in to six categories based on the equivalent circuit. Some experimental results show that a common-mode transformer (CMT) and a common-noise canceler (ACC) can solve the problems, which have been proposed the authors.

• Journal of Power Electronics
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• 제11권5호
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• pp.677-687
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• 2011

In this paper a cycloconverter-type high frequency transformer link inverter with a reduced switch count is analyzed and designed. The proposed topology consists of an H-bridge inverter at the transformer's primary side and a cycloconverter with three bidirectional switches at the secondary. All of the switches of the cycloconverter operate in non-resonant zero voltage and zero current switching modes. To overcome a high voltage surge problem resulting from the transformer leakage inductance, phase angle control based on natural commutation is employed. The effectiveness of the proposed inverter is verified by constructing s 750W prototype. Experimentally, the inverter is able to supply a near sinusoidal output voltage with a total harmonic distortion of less than 1%. For comparison, a PSpice simulation of the inverter is also carried out. It was found that the experimental results are in very close agreement with the simulation.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1998년도 추계학술대회 논문집 학회본부A
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• pp.192-194
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• 1998

This paper proposes a power supply for welding machine of reducing conduction Losses. To improve the conventional Phased-Shift FB DC-DC converter's problems that the copper loss in the high frequency transformer and conduction losses in the 1st terms bridge switch device because the leakage energy in the high frequency transformer and inducing of circulating current. This paper suggested a new topology of FB PWM DC-DC converter for welding machine to minimize a circulating current.

• 조명전기설비학회논문지
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• 제23권7호
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• pp.20-28
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• 2009

This paper presents the design of zero current switching ZCS pulse frequency modulation type DC-DC converter for magnetron power supply. A magnetron serving as the microwave source in a microwave oven is driven by a switch mode power supply (SMPS). SMPSs have the advantages of improved efficiency, reduced size and weight, regulation and the ability to operate directly from the converter DC bus. The demands of the load system and the design of the power supply required to produce constant power at 4[kV]. A magnetron power supply requires the ability to limit the load current under short circuit conditions. The current source series resonant converter is a circuit configuration which can achieve this. The main features of the proposed converter are an inherent protection against a short circuit at the output, a high voltage gain and zero current switching over a large range of output power. These characteristics make it a viable choice for the implementation of a high voltage magnetron power supply.

• Journal of Power Electronics
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• 제15권5호
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• pp.1402-1408
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• 2015

A MOSFET's gate driver based on magnetic coupling is investigated. The gate driver can meet the demands in applications for wide range of duty cycles and high frequency. Fully galvanic isolation can be realized, and no auxiliary supply is needed. The driver is insensitive to the leakage inductor of the isolated transformer. No gate resistor is needed to damp the oscillation, and thus the peak output current of the gate driver can be improved. Design of the driving transformer can also be made more flexible, which helps to improve the isolation voltage between the power stage and the control electronics, and aids to enhance the electromagnetic compatibility. The driver's operation principle is analyzed, and the design method for its key parameters is presented. The performance analysis is validated via experiment. The disadvantages of the traditional magnetic coupling and optical coupling have been conquered through the investigated circuit.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2001년도 추계학술대회 논문집 전기기기 및 에너지변환시스템부문
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• pp.262-268
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• 2001

Remarkable progress has been performed in power electronics, using high frequency switching based on the improvement of power semi-conductor devices. In the other hands, it gives us serious problems, such as, insulation, increasing of the high frequency leakage current, and electric corrosion of bearing in the loaded motors driven by inverters using high frequency switching. To improve these problems, many researches have made especially on the application of soft switching technologies. From this point of view IEE-Japan had started the research groups on soft-switching technology 1997 and 1999. This paper is a survey based on the discussion in this research group with results of ARCP inverter applied for 210kVA power supply.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.358-361
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• 2002

Self-aligned MOSFETS using a polysilicon gate are widely fabricated in silicon technology. The polysilicon layer acts as a mask for the source and drain implants and does as gate electrode in the final product. However, the usage of polysilicon gate as a self-aligned mask is restricted in fabricating SiC MOSFETS since the following processes such as dopant activation, ohmic contacts are done at the very high temperature to attack the stability of the polysilicon layer. A metal instead of polysilicon can be used as a gate material and even can be used for ohmic contact to source region of SiC MOSFETS, which may reduce the number of the fabrication processes. Co-formation process of metal-source/drain ohmic contact and gate has been examined in the 4H-SiC based vertical power MOSFET At low bias region (<20V), increment of leakage current after RTA was detected. However, the amount of leakage current increment was less than a few tens of ph. The interface trap densities calculated from high-low frequency C-V curves do not show any difference between w/ RTA and w/o RTA. From the C-V characteristic curves, equivalent oxide thickness was calculated. The calculated thickness was 55 and 62nm for w/o RTA and w/ RTA, respectively. During the annealing, oxidation and silicidation of Ni can be occurred. Even though refractory nature of Ni, 950$^{\circ}C$ is high enough to oxidize it. Ni reacts with silicon and oxygen from SiO$_2$ 1ayer and form Ni-silicide and Ni-oxide, respectively. These extra layers result in the change of capacitance of whole oxide layer and the leakage current

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2004년도 ICEIC The International Conference on Electronics Informations and Communications
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• pp.343-347
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• 2004

High oxidation temperature of SiC shows a tendency of carbide formation at the interface which results in poor MOSFET transfer characteristics. Thus we developed oxidation processes in order to get low interface charge densities. N-type 6H-SiC MOS capacitors were fabricated by different oxidation processes: dry, wet, and dry­reoxidation. Gate oxidation and Ar anneal temperature was $1150^{\circ}C.$ Ar annealing was performed after gate oxidation for 30 minutes. Dry-reoxidation condition was $950^{\circ}C,$ H2O ambient for 2 hours. Gate oxide thickness of dry, wet and dry-reoxidation samples were 38.0 nm, 38.7 nm, 38.5 nm, respectively. Mo was adopted for gate electrode. To investigate quality of these gate oxide films, high frequency C- V measurement, gate oxide leakage current, and interface trapped charge densities (Dit) were measured. The interface trapped charge densities (Dit) measured by conductance method was about $4\times10^{10}[cm^{-1}eV^{-1}]$ for dry and wet oxidation, the lowest ever reported, and $1\times10^{11}[cm^{-1}eV^{-1}]$ for dry-reoxidation

• 대한전기학회:학술대회논문집
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• 대한전기학회 1999년도 하계학술대회 논문집 E
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• pp.2186-2188
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• 1999

A high frequency and energy density pulse transformer is a critical component of a high voltage power supply in a traveling wave tube (TWT) amplifier system. In this paper, processes of design, manufacturing, and test of the transformer are discussed. Primary voltage of the transformer is 240 V. The transformer secondary have two outputs which are 4100 V (Helix) and 2050 V (Collector). Total output power is 860 W. Normal operating frequency of the transformer is 10 kHz. In high energy density pulse transformers, temperature rise is a main problem during its operation. From our study, it was found that resonant current due to leakage inductance and stray capacitance was the main cause of temperature rise. This happens because of the inherently high turn-ratio in high voltage transformers. Solutions to reduce stray components are presented.