• 전기학회논문지
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• 제62권6호
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• pp.798-802
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• 2013

In a conventional DC power supply used for CO2 laser, the circuit elements such as a rectifier bridge, a current-limiting resistor, a high voltage switch, energy storage capacitors ans a high-voltage isolation transformer using high turn ratio are necessary. Consequently, those supplies are expensive and require a large space. Thus, laser resonator and power supply should be optimally designed. In this paper, we propose a new power supply using high frequency resonance phenomena for CW(Continuous wave) CO2 laser (maximum output of 23W with discharge length of 450mm). It consists of a transformer including leakage inductance, magnetizing inductance and half-bridge converter, a three-stage Cockcroft-Walton and PFC(Power factor correction) circuit. The output ripple voltage can be controlled the minimum of 0.24% under the high frequency switching of 231kHz. Furthermore, the output efficiency was improved to 16.4% and the laser output stability of about 5.6% was obtained in this laser system.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2002년도 하계학술대회 논문집 B
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• pp.923-925
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• 2002

The existing contactless inductive coupler has many problems because of its large volume and high level of exciting current, so a new contactless inductive coupler is being required under the circumstances and the load requirement. For a contactless inductive coupler in the manufacturing equipment of semiconductor, the coupler's efficiency is low because of its small magnetic inductance and large leakage inductance. Moreover, the high frequency switching to increase energy density per unit volume increases the iron loss and the eddy current loss, so it must be considered deeply when selecting core materials. Therefore, this paper presents core materials and shape to improve the performance of the contactless inductive coupler according to the coil positions.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제51권8호
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• pp.340-346
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• 2002

Capacitor material utilized in the downsizing passive devices and integration of passive devices requires the physical and electrical properties at given area such as capacitor thickness reduction, relative dielectric constant increase, low leakage current and thermal stability. common capacitor materials, $Al_2O_3$, $SiO_2$, $Si_3N_4$, $SiO_2$/$Si_3N_4$, TaN and et al., used until recently have reached their physical limits in their application to integration of passive devices. $Ta_2O_{5}$ is known to be a good alternative to the existing materials for the capacitor application because of its high dielectric constant (25~35), low leakage current and high breakdown strength. Despite the numerous investigations of $Ta_2O_{5}$ material, there have little been established the clear understanding of the annealing effect on capacitance characteristic and conduction mechanism. This study presents the dielectric properties $Ta_2O_{5}$ MIM capacitor structure Processed by $O_2$ RTA oxidation. X-ray diffraction patterns showed the existence of amorphous phase in $600^{\circ}C$ annealing under the $O_2$ RTA and the formation of preferentially oriented-$Ta_2O_{5}$ in 650, $700^{\circ}C$ annealing and the AES depth profile showed $O_2$ RTA oxidation effect gives rise to the $O_2$ deficientd into the new layer. The leakage current density respectively, at 3~1l$\times$$10_{-2}$(kV/cm) were $10_{-3}$~$10_{-6}$(A/$\textrm{cm}^2$). In addition, behavior is stable irrespective of applied electric field. the frequency vs capacitance characteristic enhanced stability more then $Ta_2O_{5}$ thin films obtained by $O_2$ reactive sputtering. The capacitance vs voltage measurement that, Vfb(flat-band voltage) was increase dependance on the $O_2$ RTA oxidation temperature.

• 전력전자학회논문지
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• 제8권6호
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• pp.504-511
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• 2003

본 연구에서는 네온 변압기를 세라믹 계열의 압전 변압기를 이용한 인버터식 네온관용 변압기를 제안하였다 인버터식 네온관용 압전 변압기의 주요 구성은 정류부, 발진부, 공진형 하프브릿지 인버터회로부 및 압전 변압기부로 구성 제작하였다. 네온관용 변압기는 지금까지 개발된 압전 변압기 용량 보다 대부분 큰 용량을 필요로 하고 있기 때문에 압전 변압기의 용량 증가를 위해 병렬 구동하였다 이때 병렬로 연결된 단층형 압전 변압기간 내부 임피던스 값의 불일치로 발생하는 불평형 전류를 최소화 하기 위하여 압전 변압기별로 LC 필터값을 분석 부착하여 전압의 왜곡율을 최소화 하여 안정된 정현파 출력을 구현하였다. 그리고 이를 컴퓨터 시뮬레이션 실험과 실제 네온관 부착 실험을 통하여 전력 밀도와 절연 레벨이 높고, 누설 자속이 없는 소형, 경량화된, 압전 변압기를 적용한 인버터식 네온관용 변압기가 기존의 자기식 네온관용 변압기 보다 우수함을 비교 입증하였다.

• 전자공학회논문지A
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• 제33A권12호
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• pp.59-64
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• 1996

InSb MIS devices prepared by remote PECVD SiO$_{2}$ were fabricated. The SiO$_{2}$ films on InSb were deposited at atemperature range of 67~190$^{\circ}$C. The effects of deposition temperature on the structural characteristics of the SiO$_{2}$ films evaluated Auger electron spectroscopy showed that atomic raito of silicon to oxygen was 0.5 and composition toms were distributed uniformaly throuout the oxide film. The transition region is about 100$\AA$ for SiO$_{2}$/InSb interface. The leakage current density at 1MV/cm and the breakdownelectric field of the MiS device using SiO$_{2}$ film deposited at 105$^{\circ}$C were about 22 nA/cm$^{2}$ and 3.5MV/cm, respectively. The interface-state density at mid-bandgap extracted from 1 MHz high frequency C-V measurement was about 2X10$^{11}$ cm$^{-2}$eV$^{-1}$.

• 전력전자학회:학술대회논문집
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• 전력전자학회 2002년도 전력전자학술대회 논문집
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• pp.589-592
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• 2002

The CCM (Continuous Conduction Mode) boost topology is generally used in the PFC (Power Factor Correction) regulator of household air-conditioning systems. There are three kinds of power devices-bridge rectifier diodes, FRDs (Fast Recovery Diodes), and IGBTs (or MOSFETs) - used In a boost PFC regulator. Selecting the appropriate device is very cumbersome work, specially, in the case of FRDs and IGBTs, because there are several considerations as described below: 1) High frequency leakage current regulation (conducted and radiated EMI regulation) 2) Power losses and thermal design 3) Device cost. It should be noted that there are trade-offs between the power loss characteristic of 2) and the other characteristics of 1) and 3). This paper presents a detailed evaluation by using several types of power devices, which can be unintentionally used, to show that optimal selection can be achieved. Based on the given thermal resistances, thermal analysis and design procedures are also described from a practical viewpoint.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2008년도 추계학술대회 논문집 전기기기 및 에너지변환시스템부문
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• pp.126-128
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• 2008

This paper presents an architecture for driving multiple paralleled cold cathode fluorescent lamps (CCFLs) for back lighting applications. Multi CCFL operation and increase of brightness, the key to the architecture is a proposed capacitive coupling approach for lamp ignition. This system is consist of a flyback converter, a single inverter to drive multiple lamps and conductive floating reflector. The topology is capable of driving a number of parallel lamps with independent accurate lamp, The capacitive coupling the leakage inductance and stray capacitance creation which it used, current regulation and improving cost effectiveness with significant reduction in size and weight, compared to typical high frequency ac ballast. Experimental demonstration results for ten of parallel CCFLs with simultaneous ignition.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1996년도 추계학술대회 논문집
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• pp.160-163
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• 1996

To develope output characteristics of GaAs MESFET, which utilized in high frequency ranges, $Al_{0.2}$Ga$_{0.8}$As/GaAs layer was used. In this case, to minimize effects of deep-level in $Al_{0.2}$Ga$_{0.8}$As/GaAs layer, aluminium mole fraction was design to 0.2. HP 4145B was used in measurement, I$_{dss}$ was 25mA when V$_{G}$=0. Maximum transconductance was 168.75mS/mm, electron mobility was 3750 $\textrm{cm}^2$/V-s, therefore, it must be suitable for active device in MMIC. Also, Ideality factor was 1.26, which was similar to that of ideal schottky diode.

• 한국조명전기설비학회:학술대회논문집
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• 한국조명전기설비학회 2009년도 춘계학술대회 논문집
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• pp.384-387
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• 2009

There is an increasing demand for efficient high power/weight auxiliary power supplies for use on high speed traction application. Many new conversion techniques have been proposed to reduce the voltage and current stress of switching components, and the switching losses in the traditional pulse width modulation (PWM) converter. Especially, the phase shift full bridge zero voltage switching PWM techniques are thought must desirable for many applications because this topology permits all switching devices to operate under zero voltage switching(ZVS) by using circuit parasitic components such as leakage inductance of high frequency transformer and power device junction capacitance. The proposed topology is found to have higher efficiency than conventional soft-switching converter. Also it is easily applicable to phase shift full bridge converter by applying an energy recovery snubber consisted of fast recovery diodes and capacitors.

• 센서학회지
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• 제5권5호
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• pp.63-68
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• 1996

출력신호를 검출하기 위한 집적화한 용량형 압력센서를 구현하기 위해서는 센서의 특성에 나쁜 영향을 미치는 기생용량, 온도/열 드리프트 및 누설전류 등의 요소가 개선 되어야 한다. 본 논문에서는 2개의 용량-주파수 변환기와 4비트 디지탈 보상회로로 구성된 새로운 이상적인 인터페이스 회로를 설계 하였다. 이 회로는 센싱 센서 주파수를 기준 센서 주파수로 나누어줌으로써 드리프트 및 누설전류의 영향이 제거될 수 있도록 설계 되었고, 신호 전송시 잡음의 영향이 적은 디지탈 신호를 처리하도록 되어있다. 그르므로 이 회로는 디지탈 비트수를 늘려 줌으로 출력신호의 분해능을 향상 시킬 수 있다. 또 이 회로 중 디지털 부분은 FPGA 칩으로 제작되어 그 작동이 확인 되었다.