• 센서학회지
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• 제9권2호
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• pp.146-152
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• 2000

고주파 마그네트론 스퍼터링법으로 Li이 도핑된 ZnO(ZnO:Li) 박막을 코닝 7059 글라스 기판상에 증착하였다. 도핑량은 스퍼터링용 ZnO타겟내의 $Li_2CO_3$의 첨가량을 달리하여 조절하였다. 타겟내의 $Li_2CO_3$의 첨가량에 따른 구조적 특성을 XRD, AFM 및 SEM으로 조사하였으며 기판온도, 고주파출력 및 $O_2/Ar$ 가스비에 따른 Li이 도핑된 ZnO박막의 전기적 특성을 조사하였다. 타겟내의 $Li_2CO_3$의 첨가량과 증착조건이 막의 구조적 및 전기적 특성에 미치는 영향을 조사하였다. $Li_2CO_3$의 첨가량이 1wt%이하인 타겟으로 기판온도 $200^{\circ}C$, $O_2$/Ar 가스비 100%, 고주파 출력 100W에서 스퍼터된 ZnO:Li 박막이 표면거칠기가 낮은 우수한 표면형상, 강한 c-축 우선배향성 및 $10^8{\Omega}cm$ 이상의 큰 비저항을 보였다.

• 공업화학
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• 제19권1호
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• pp.1-16
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• 2008

산화티탄은 가장 많이 연구된 반도체 산화물로 환경 정화와 에너지 생산에 응용이 크게 기대되고 있다. 공기와 물 속의 유해 유기물을 제거하고 물분해를 통한 수소 생산은 대표적인 응용 분야이다. 산화티탄의 저렴한 가격, 낮은 독성, 화학적 및 열적 안정성은 잘 알려진 장점이다. 그러나, 산화티탄의 단점은 가시광 영역에서 광촉매 활성이 낮다는 점이다. 이러한 문제점을 해결하기 위하여, 귀금속, 금속, 양이온, 음이온 도핑 방법으로 산화티탄의 표면과 전기적 구조를 변형시켜 가시광 영역에서 광촉매 활성을 높이기 위한 연구가 많이 진행되고 있다. 이번 총설에서는 산화티탄의 가시광 감응을 유도하는 방법에 대한 광범위한 정보를 정리하였다.

• Progress in Superconductivity
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• 제9권1호
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• pp.68-73
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• 2007

We fabricated the in-situ $MgB_2$ wires using the powder-in-tube method and investigated the effects of sintering temperature and SiC contents on the microstructure and superconducting properties. Pure $MgB_2$ wires and 5, 10, 20 wt.% SiC doped $MgB_2$ wires were sintered at $600-1000^{\circ}C$ for 30 minutes in Ar atmosphere. We found that $MgB_2$ phase was mostly formed at the sintering temperature of $700^{\circ}C$ and above, and the critical temperature ($T_c$) increased with increasing sintering temperature. For the $MgB_2$ sintered at $850^{\circ}C$, the highest critical current density ($J_c$) was obtained to be $3.7{\times}10^5\;A/cm^2$ at 5 K and 1.6 T by a magnetic properties measurement system (MPMS). The addition of SiC to the $MgB_2$ wires changed microstructure and critical properties. SEM observation showed that the $MgB_2$ core had considerable micro-cracks in undoped wire and the density of micro-cracks decreased with increasing SiC contents. The critical temperature decreased as the SiC contents increased, on the other hand, the critical current density of SiC doped $MgB_2$ wires in high magnetic field was enhanced compared to that of undoped $MgB_2$ wires.

• 한국분말재료학회지
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• 제15권3호
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• pp.182-187
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• 2008

Carbon was known to be one of effective additives which can improve the flux pinning of $MgB_2$ at high magnetic fields. In this study, glycerin $(C_3H_8O_3)$ was selected as a chemical carbon source for the improvement of critical current density of $MgB_2$. In order to replace some of boron atoms by carbon atoms, the boron powder was heat-treated with liquid glycerin. The glycerin-treated boron powder was mixed with an appropriate amount of magnesium powder to $MgB_2$ composition and the powder pallets were heat treated at $650^{\circ}C\;and\;900^{\circ}C$ for 30 min in a flowing argon gas. It was found that the superconducting transition temperature $(T_c)$ of $Mg(B_{1-x}C_x)_2$ prepared using glycerin-treated boron powder was 36.6 K, which is slightly smaller than $T_c$(37.1 K) of undoped $MgB_2$. The critical current density $(J_c)$ of $Mg(B_{1-x}C_x)_2$ was higher than that of undoped $MgB_2$ and the $T_c$ improvement effect was more remarkable at higher magnetic fields. The $T_c$, decrease and $J_c$ increase associated with the glycerin treatment for boron powder was explained in terms of the carbon substitution to boron site.

• 한국결정성장학회:학술대회논문집
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• 한국결정성장학회 1996년도 The 9th KACG Technical Annual Meeting and the 3rd Korea-Japan EMGS (Electronic Materials Growth Symposium)
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• pp.522-522
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• 1996

An investigation of the effects of transverse magnetic field and Peltier effect on melt convection and macrosegregation in vertical Bridgman crystal grosth of Te doped InSb was been carried out by means of microstructure observation, Hall measurement, electrical resistivity measurement and X-ray analysis. Before the experiments, Interface stability, convective instability and suppression of convection by magnetic field were calculated theoretically. After doping 1018, 1019 cm-3 Te in InSb, the temperature of Bridgman furnace was set up at $650^{\circ}C$. The samples were grown in I.D. 11mm, 100mm high quartz tube. The velocity of growth was about 2${\mu}{\textrm}{m}$/sec. In order to obtain the suppression of convection by magnetic field in the middle of growth, 2-4KG magnetic field was set on the melt. For searching of the shape of solid-liquid interface and the actual velocity of crystal growth, let 2A current flow from solid to liquid for 1second every 50seconds repeatedly (Peltier effect). The grown InSb was polycrystal, and each grain was very sharp. There was no much difference between the sample with and without magnetic field at a point of view of microstructure. For the sample with Peltier effect, the Peltier marks(striation) were observed regularly as expected. Through these marks, it was found that the solid-liquid interface was flat and the actual growth velocity was about 1-2${\mu}{\textrm}{m}$/sec. On the ground of theoretical calculation, there is thermosolutal convection in the Te doped InSb melt without magnetic field in this growth condition. and if there is more than 1KG magnetic field, the convection is suppressed. Through this experiments, the effective distribution coefficients, koff, were 0.35 in the case of no magnetic field, and 0.45 when the magnetic field is 2KG, 0.7 at 4KG. It was found that the more magnetic field was applied, the more convection was suppressed. But there was some difference between the theoretical calculation and the experiment, the cause of the difference was thought due to the use of some approximated values in theoretical calculation. In addition to these results, the sample with Peltier effect showed unexpected result about the Te distribution in InSb. It looked like no convection and no macrosegregation. It was thought that the unexpected behavior was due to Peltier mark. that is, when the strong current flew the growing sample, the mark was formed by catching Te. As a result of the phenomena, the more Te containing thin layer was made. The layer ruled the Hall measurement. The values of resistivity and mobility of these samples were just a little than those of other reference. It was thought that the reason of this result was that these samples were due to polycrystal, that is, grain boundaries had an influence on this result.

• 한국세라믹학회지
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• 제33권11호
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• pp.1292-1300
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• 1996

PLZT(x/70/30)의 x=7.5, 8.0, 8.5, 10.5 조성에 대하여 전계인가와 동시에 X-선 회절측정을 전계 20kV/cm에 이르기까지 수행하였다. 모든 PLZT는 입방상에 속하였다. x=7.5, 8.0, 8.5에서 PLZT는 4~8kV/cm의 낮은 전계에 이르기까지 반강유전적인 특성을 보였으며 보다 높은 전계에서는 강유전적인 특성을 나타내었다. 온도에 따른 유전상수의 측정에 따르면 x=7.5, 8.0, 8.5 조성에서 PLZT는 완화형 강유전체와 유사하였으며 50-7$0^{\circ}C$에서 확산적인 반강유전-상유전 상전이가 나타났다. 자발분극-전계(P-E) 이력곡선은 이들이 반강유전적인 특성을 가지고 있음을 보여주었다. 매우 넓은 큐리점의 분포는 이들 PLZT의 결정구조에서 La 치환에 의한 양이온 및 빈자리의 무질서도가 상당함을 시사한다. PLZT (10.5/70/30)의 전계에 따른 변형은 매우 미미하였으며 이력현상이 없는 상유전적인 특성을 보였다. 전계인가에 따른 변형률은 La 치환량이 증가함에 따라 감소하였다. PLZT(7.5/70/30)에서 110회절선의 강도는 전계인가에 민감하게 변화하여, [110] 방향에 평행한 자발분극을 가지는 분역이 전계인가로 유도된 PLZT의 강유전상에서 발달된 것처럼 여겨진다.

• 전자공학회논문지
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• 제53권5호
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• pp.69-76
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• 2016

MCT (MOS Controlled Thyristor)의 전류 구동능력은 도통상태의 MCT를 턴-오프 시킬 수 있는 능력, 즉 off-FET의 성능에 의해 결정되고, MCT의 주된 응용분야인 펄스파워 분야에서는 턴-온 시의 피크전류($I_{peak}$)와 전류상승기울기(di/dt) 특성이 매우 중요하다. 이러한 요구사항을 만족시키기 위해서는 MCT의 on/off-FET 성능 조절이 중요하지만, 깊은 접합의 P-웰과 N-웰을 형성하기 위한 삼중 확산공정과 다수의 산화막 성장공정은 이온주입 불순물의 표면농도를 변화시키고 on/off-FET의 문턱전압($V_{th}$) 조절을 어렵게 한다. 본 논문에서는 on/off-FET의 $V_{th}$를 개선하기 위한 채널영역 문턱전압 이온주입에 대하여 시뮬레이션을 진행하고 이를 토대로 제작한 MCT의 전기적 특성을 비교 평가하였다. 그 결과 문턱전압 이온주입을 진행한 MCT의 경우(활성영역=$0.465mm^2$) $100A/cm^2$ 전류밀도에서의 전압손실($V_F$)은 1.25V, 800V의 어노드 전압에서 $I_{peak}$ 및 di/dt는 290A와 $5.8kA/{\mu}s$로 문턱전압 이온주입을 진행하지 않은 경우와 유사한 특성을 나타낸 반면, $100A/cm^2$의 구동전류에 대한 턴-오프 게이트전압은 -3.5V에서 -1.6V로 감소하여 MCT의 전류 구동능력을 향상시킴을 확인하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.183-183
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• 2014

Recently, multiferroic materials gain much attention due to their fascinating fundamental physical properties. These materials offer wide range of potential applications such as data storage, spintronic devices and sensors, where both electronic and magnetic polarizations can be coupled. Among single-phase multiferroic materials, $BiFeO_3$ is typical because of the room-temperature magnetoelectric coupling in view of long-range magnetic- and ferroelectric-ordering temperatures. However, $BiFeO_3$ is well known to have large leakage current and small spontaneous polarization due to the existence of oxygen vacancies and other defects. Furthermore the magnetic moment of pure $BiFeO_3$ is very weak owing to its antiferromagnetic nature. Recently, various attempts have been performed to improve the multiferroic properties of $BiFeO_3$ through the co-doping at the A and the B sites, by making use of the fact that the intrinsic polarization and magnetization are associated with the lone pair of $Bi^{3+}$ ions at the A sites and the partially-filled 3d orbitals of $Fe^{3+}$ ions at the B sites, respectively. In this study, $BiFeO_3$, $Bi_{0.9}Ho_{0.1}FeO_3$, $BiFe_{0.97}Ni_{0.03}O_3$ and $Bi_{0.9}Ho_{0.1}Fe_{0.97}Ni_{0.03}O_3$ bulk compounds were prepared by solid-state reaction and rapid sintering. High-purity $Bi_2O_3$, $Ho_2O_3$, $Fe_2O_3$ and $NiO_2$ powders with the stoichiometric proportions were mixed, and calcined at $500^{\circ}C$ for 24 h to produce the samples. The samples were immediately put into an oven, which was heated up to $800^{\circ}C$ and sintered in air for 1 h. The crystalline structure of samples was investigated at room temperature by using a Rigaku Miniflex powder diffractometer. The field-dependent and temperature-dependent magnetization measurements were performed with a vibrating-sample magnetometer and superconducting quantum-interference device.

• 공업화학
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• 제8권2호
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• pp.172-178
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• 1997

폴리아닐린(PANI)-stearic acid(SA) 복합물의 단분자막이 공기-물 계면에서 형성되었으며, 계면활성제인 stearic acid는 PANI 단분자막의 형성을 증진시키는데 사용되었다. Langmuir-Blodgett(LB) 기법을 사용하여 약 1의 전이비와 Y형태를 갖는 균일한 PANI-SA의 다층막을 제조하였다. HCI 또는 $I_2$의 도핑에 의해 $10^{-1}{\sim}10^{-2}S/cm$의 높은 전기 전도도를 갖는 PANI-SA 복합막의 LB 필름을 얻었고, 그 값은 전형적인 PANI-HCl 착제와 비슷한 전도도를 나타냈다. 특히 $I_2$는 전자수용체/감광체/전자공여체로 구성된 MIM 분자 device에서 고분자 전극으로 사용하는데 뛰어난 안정성을 제공해 주기 때문에 가장 적합한 도판트로 밝혀졌다. PANI-SA LB 필름의 구조와 물리적 성질은 near-ir UV, FT-IR과 Cyclic voltammetry를 통해 조사하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.204-205
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• 2011

In thin film silicon solar cells, p-i-n structure is adopted instead of p/n junction structure as in wafer-based Si solar cells. PECVD is a most widely used thin film deposition process for a-Si:H or ${\mu}c$-Si:H solar cells. For best performance of thin film silicon solar cell, the dopant profiles at p/i and i/n interfaces need to be as sharp as possible. The sharpness of dopant profiles can easily achieved when using multi-chamber PECVD equipment, in which each layer is deposited in separate chamber. However, in a single-chamber PECVD system, doped and intrinsic layers are deposited in one plasma chamber, which inevitably impedes sharp dopant profiles at the interfaces due to the contamination from previous deposition process. The cross-contamination between layers is a serious drawback of a single-chamber PECVD system in spite of the advantage of lower initial investment cost for the equipment. In order to resolve the cross-contamination problem in single-chamber PECVD systems, flushing method of the chamber with NH3 gas or water vapor after doped layer deposition process has been used. In this study, a new plasma process to solve the cross-contamination problem in a single-chamber PECVD system was suggested. A single-chamber VHF-PECVD system was used for superstrate type p-i-n a-Si:H solar cell manufacturing on Asahi-type U FTO glass. A 80 MHz and 20 watts of pulsed RF power was applied to the parallel plate RF cathode at the frequency of 10 kHz and 80% duty ratio. A mixture gas of Ar, H2 and SiH4 was used for i-layer deposition and the deposition pressure was 0.4 Torr. For p and n layer deposition, B2H6 and PH3 was used as doping gas, respectively. The deposition temperature was $250^{\circ}C$ and the total p-i-n layer thickness was about $3500{\AA}$. In order to remove the deposited B inside of the vacuum chamber during p-layer deposition, a high pulsed RF power of about 80 W was applied right after p-layer deposition without SiH4 gas, which is followed by i-layer and n-layer deposition. Finally, Ag was deposited as top electrode. The best initial solar cell efficiency of 9.5 % for test cell area of 0.2 $cm^2$ could be achieved by applying the in-situ plasma cleaning method. The dependence on RF power and treatment time was investigated along with the SIMS analysis of the p-i interface for boron profiles.